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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Beam breakup instability studies of powerful energy recovery linac for experiments

The maximum achievable beam current in an energy recovery linac (ERL) is often constrained by beam breakup (BBU) instability. Our previous research highlighted that filling patterns have a substantial impact on BBU instabilities in multipass ERLs. In this study, we extend our investigation to the eight-cavity model of the Powerful ERL for Experiment (PERLE). We evaluate its requirements for damping cavity higher order modes (HOMs) and propose optimal filling patterns and bunch timing strategies. Our findings reveal a significant new insight: while filling patterns are crucial, the timing of bunches also plays a critical role in mitigating HOM beam loading and BBU instability. This previously underestimated factor is essential for effective BBU control. We estimated the PERLE threshold current using both analytical and numerical models, incorporating the designed PERLE HOM dampers. During manufacturing, HOM frequencies are expected to vary slightly. Our study found no significant difference in BBU suppression for relative rms frequency jitters of 0.001, 0.002, and 0.005 for the same HOM. Introducing a jitter of 0.001 into our models, we found that the dampers effectively suppressed BBU instability, achieving a threshold current an order of magnitude higher than the design requirement. Our results offer new insights into ERL BBU beam dynamics and have important implications for the design of future ERLs. Published by the American Physical Society 2025

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Transverse BBU Suppression with Feedback for Energy Recovery Linacs

In this study, we present beam dynamics simulations of the Strong Hadron Cooling (SHC) Energy Recovery Linac (ERL) that incorporate a feedback (FB) system designed to mitigate Beam Breakup (BBU) instabilities. The FB effectively suppresses BBU and increases the threshold current by roughly an order of magnitude. Our analysis revealed the aliasing behavior of the dominant higher-order mode (HOM) and its suppression by the FB, as evident from the power spectral density (PSD) of the beam centroid’s horizontal motion at the exit of the final linac section. Although the FB system— even when affected by noise—successfully reduced the BBU peak, it also amplified the PSD at other frequencies. These results provide important insights into BBU suppression and threshold current enhancement in ERLs.

Setiniyaz, S. [Thomas Jefferson National Accelerat↗
NASA NTRS2010

Modeling of Sonos Memory Cell Erase Cycle

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memories (NVSMS) have many advantages. These memories are electrically erasable programmable read-only memories (EEPROMs). They utilize low programming voltages, endure extended erase/write cycles, are inherently resistant to radiation, and are compatible with high-density scaled CMOS for low power, portable electronics. The SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. The SONOS floating gate charge and voltage, tunneling current, threshold voltage, and drain current were characterized during an erase cycle. Comparisons were made between the model predictions and experimental device data.

Phillips, Thomas A.↗
NASA NTRS1980

Gigahertz analog modulation and differential delay of GaAlAs lasers - Temperature and current behavior

Gigahertz analog modulation characteristics of broad-area commercially available GaAlAs lasers have been investigated as a function of temperature and current in the vicinity of the upper frequency limit, where the resonance phenomena occur. The optimum temperature for small-signal amplitude modulation was found to be around -15 C for our particular broad-stripe geometry double-heterostructure laser. The Q was found to increase by a factor of 2 and the bandwidth by about 2%; the external quantum efficiency was maximized in this range. The optimum dc current bias was about 2% above the threshold current. Differential delays have also been measured down to a few picosecond accuracy by a unique phase-angle measurement method using a vector voltmeter. Some of the temperature effects observed may be related to mode changes and multimode and superradiance behavior.

Eng, S. T.↗
NASA NTRS2010

SONOS Nonvolatile Memory Cell Programming Characteristics

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

MacLeod, Todd C.↗
DOE OSTI2024

Failure Process During Fast Charging of Lithium Metal Batteries with Weakly Solvating Fluoroether Electrolytes

While improving the lithium metal (Li) Coulombic efficiency has been a focus for electrolyte design, the performance under high current densities is less studied yet highly relevant for practical applications. Here, we evaluate the charge-rate-dependent cycling stability using three types of weakly solvating fluoroether electrolytes. Although good cycle life was achieved in all three electrolytes under low current densities, they all exhibited a soft shorting behavior above various threshold current densities (between 2 and 5.2 mA cm –2 ). In this study, we attributed the current-dependent electrode morphology to both Li growth and residual solid electrolyte interface (rSEI) growth processes. In early cycles, Li morphology guided the formation of rSEI structures. In later cycles, the rSEI structure partially impacted Li growth. Under low current densities, the rSEI was inhomogeneous with large voids for subsequent bulky lithium growth. Under high current densities, the rSEI became more dense, which aggravated the high-surface/volume-ratio Li growth through and on the top of the rSEI. Among the three weakly solvating fluoroether electrolytes, the ones with lower ionic conductivity were observed to short within fewer cycles and at lower charge current densities. Our work suggests that fast ion transport in electrolytes may be a desirable feature for the stable operation at >1C charging in high-energy-density lithium metal batteries.

25 ENERGY STORAGE↗
NASA NTRS1975

Formation of internally-confined semiconductor lasers

In technique for fabrication of strip lasers, current constriction is accomplished by diffusing blocking regions into n-type substrate prior to growth. Current flow is controlled by blocking layers, which results in reduction of threshold current and better heat dissipation.

Cannuli, V. M.↗
NASA NTRS2002

Effects of Lateral Plasma Density and Temperature Diffusion on VCSEL Performance

The hydrodynamic model is further verified by applying to a gain-guided single mode VCSEL. DC effects of D(sub NN): (1) increase threshold current J(sub th) and decrease slope efficiency; (2) within the studied range (50% pumping within threshold and realistic diffusion coefficient for a single mode), the L-I relation scales with the relative Injection current (J/J(sub th) - 1). AC effects of D(sub NN): (1) decrease spectral bandwidth and responsivity of direct-current modulation; (2) within the studied range, the frequency response follows the same formal dependence as predicted without diffusion and under a linear gain model, while the resonant frequency position similarly scales with the relative injection current; (3) therefore, it is concluded that the AC effects of D(sub NN) is purely of static nature and reflected via its influence on ot and J(sub th). Within this study, the nonlinear effects of D(sub NN) are mostly reproducible with an equivalent constant diffusion coefficient.

Li, Jian-Zhong↗
NASA NTRS1995

Long Wavelength INGaAs/InGaAsP Quantum Well Lasers at [approximately] 2.0 micrometers

InGaAs/InGaAsP strained quantum well buried heterostructure and distributed feedback lasers emitting at wavelengths as long as 2.06 micrometers with low internal loss and threshold currents have been demonstrated for the first time. The room and high temperature characteristics and the threshold gain are discussed.

quantum well lasers indium gallium↗
NASA NTRS1982

Studies of single-mode injection lasers and of quaternary materials. Volume 1: Single-mode constricted double-heterojunction AlGaAs diode lasers

Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various types of CDH structures are considered under three general topics: liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers have positive-index lateral-mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C; light-current characteristics with second-harmonic distortion as low as -57 dB below the fundamental level; threshold-current temperature coefficients, as high as 375 C (pulsed) and 310 C (CW); constant external differential quantum efficiency to 100 C; and lasing operation to 170 C CW and 280 C pulsed. Semileakyguide CDH lasers have an asymmetric leaky cavity for lateral-mode confinement and provide single-mode operation to 15 to 20 mW/facet CW and to 50 mW/facet at 50% duty cycle. Modulation characteristics and preliminary reliability data are discussed.

Botez, D.↗
NASA NTRS1978

Red-emitting Ga/As,P///In,Ga/P heterojunction lasers

The paper describes in detail the properties of vapor-grown double-heterojunction lasers of Ga(As,P)/(In,Ga)P with room-temperature threshold current densities as low as 3400 A/sq cm at 7000 A and 6600 A/sq cm at 6800 A. These thresholds are three to eight times smaller than those of (Al,Ga)As lasers in this wavelength range due to the shorter-wavelength direct-indirect transition in Ga(As,P). The optical and electrical characteristics of the Ga(As,P)/(In,Ga)P lasers are found to be similar to those of (Al,Ga)As, with fundamental transverse-mode operation to 70 C, and spontaneous carrier lifetimes between 5 and 8 nsec typically observed at low current densities.

Kressel, H.↗
DOE OSTI2026

Transverse BBU Suppression with Feedback for Energy-Recovery Linacs

The Electron–Ion Collider (EIC) achieves its design luminosity by cooling the ion beam with a high-current electron beam generated in an energy-recovery linac (ERL). The baseline ERL lattice employs a BNL five-cell cavity that is frequency-scaled to 197 MHz, 591 MHz, and 1.773 GHz, raising concerns about multibunch beam-breakup (BBU) instabilities. Threshold currents for each frequency option are established with two independent BBU tracking codes, providing cross-validated operating margins that guide cavity selection. To further increase the current limit, we incorporate a digital transverse feedback (FB) system that targets the dominant higher-order modes (HOMs). Simulations show the FB raises the BBU threshold by roughly an order of magnitude: power-spectral-density analysis of the beam centroid at the linac exit confirms strong suppression of the aliased HOM peak, although some spectral growth appears at secondary frequencies. This combined study quantifies baseline BBU limits, demonstrates effective active mitigation, and charts a practical path toward robust, high-current operation of the EIC ERL.

Accelerator Physics↗
NASA NTRS1990

Initial evaluation of commercially available InGaAsP DFB laser diodes for use in high-speed digital fiber optic transceivers

NASA has been pursuing the development of high-speed fiber-optic transceivers for use in a number of space data system applications. Current efforts are directed toward a high-performance all-integrated-circuit transceiver operating up to the 3-5 Gb/s range. Details of the evaluation and selection of candidate high-speed optical sources to be used in the space-qualified high-performance transceiver are presented. Data on the performance of commercially available DFB (distributed feedback) lasers are presented, and their performance relative to each other and to their structural design with regard to their use in high-performance fiber-optic transceivers is discussed. The DFB lasers were obtained from seven commercial manufacturers. The data taken on each laser included threshold current, differential quantum efficiency, CW side mode suppression radio, wavelength temperature coefficient, threshold temperature coefficient, natural linewidth, and far field pattern. It was found that laser diodes with buried heterostructures and first-order gratings had, in general, the best CW operating characteristics. The modulated characteristics of the DFB laser diodes are emphasized. Modulated linewidth, modulated side mode suppression ratio, and frequency response are discussed.

Cook, Anthony L.↗
NASA NTRS2010

Qualification and Selection of Flight Diode Lasers for Space Applications

The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode traceablity.

Liebe, Carl C.↗
NASA NTRS1978

The 1.1 micrometer and visible emission semiconductor diode lasers

In (AlGa)As, the first of three alloy systems studied, Continuous Wave (CW) operation was obtained at room temperature at a wavelength as low as 7260 A. Reliability in this system was studied in the incoherent mode. Zinc doped devices had significant degradation, whereas Ge or Ge plus Zi doped devices had none. The Al2O3 facet coatings were shown to significantly reduce facet deterioration in all types of lasers, longer wavelength units of that type having accumulated (at the time of writing) 22,000 hours with little if any degradation. A CL study of thin (AlGa)As layers revealed micro fluctuation in composition. A macro-scale fluctuation was observed by electroreflectance. An experimental and theoretical study of the effect of stripe width on the threshold current was carried out. Emission below 7000 A was obtained in VPE grown Ga(AsP) (In,Ga)P with CW operation at 10 C. Lasers and LED's were made by LPE in (InGa) (AsP). Laser thresholds of 5 kA/cm2 were obtained, while LED efficiences were on the order of 2%. Incoherent life test over 6000 hours showed no degradation.

Ladany, I.↗
NASA NTRS1991

Improving the Reliability and Modal Stability of High Power 870 nm AlGaAs CSP Laser Diodes for Applications to Free Space Communication Systems

The operating characteristics (power-current, beam divergence, etc.) and reliability assessment of high-power CSP lasers is discussed. The emission wavelength of these lasers was optimized at 860 to 880 nm. The operational characteristics of a new laser, the inverse channel substrate planar (ICSP) laser, grown by metalorganic chemical vapor deposition (MOCVD), is discussed and the reliability assessment of this laser is reported. The highlights of this study include a reduction in the threshold current value for the laser to 15 mA and a degradation rate of less than 2 kW/hr for the lasers operating at 60 mW of peak output power.

Connolly, J. C.↗
DOE OSTI2024

Linewidth narrowing in self-injection locked lasers: Effects of quantum confinement

This paper explores the impact of gain medium on linewidth narrowing in integrated self-injection locked III–V/SiN lasers, theoretically and experimentally. We focus on the effects of carrier densities of states in zero- and two-dimensional structures due to quantum-dot and quantum-well confinement. The theoretical approach includes (a) multimode laser interaction to treat mode competition and wave mixing, (b) quantum-optical contributions from spontaneous emission, and (c) composite laser/free-space eigenmodes to describe outcoupling and coupling among components within an extended cavity. For single-cavity lasers, such as distributed feedback lasers, the model reproduces the experimentally observed better linewidth performance of quantum-dot active regions over quantum-well ones. When applied to integrated III–V/SiN lasers, our analysis indicates Hz-level linewidth performance for both quantum-dot and quantum-well gain media due to overcoming the difference in carrier-induced refractive index by incorporating a high-Q SiN passive resonator. Trade-offs are also explored between linewidth, output power, and threshold current.

Cavity quantum electrodynamics↗
DOE OSTI2024

Imaging of dark line defect growth in high-power diode laser cavities using broadband near infrared light emission from the laser cavity

An in situ and nondestructive technique is developed to image the formation and evolution of dark line defects in the cavity of a high-power diode laser. Here, the technique uses broadband near infrared emission that originates in the laser's core layers and enables defects to be imaged with high spatial resolution through the substrate. In particular, it enables defect imaging through the substrate of shorter wavelength lasers, even when the substrate is opaque near the lasing wavelength. The evolution of dark line defects during aging is studied in several devices, with correlations established between the observed characteristics of defect growth and changes in device parameters such as optical power, operating wavelength, threshold current, and slope efficiency. Gradual degradation is found to be associated with dark line defects that slowly propagate from dark spots that are present in the device interior in its fresh (unaged) condition, rather than propagating from spots that are formed during aging, suggesting a strategy to screen fresh devices for expected reliability. This defect growth phenomenon is found to be particularly evident in the dark spots near the output facet.

47 OTHER INSTRUMENTATION↗