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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Acoustic Issues in Human Spaceflight

NASA is concerned about acute effect of sound on crew performance on International Space Station (ISS), and is developing strategies to assess and reduce acute, chronic, and delayed effects of sound. High noise levels can cause headaches, irritation, fatigue, impaired sleep, headache, and tinnitus and have resulted in an inability to hear alarms. Speech intelligibility may be more impaired for crew understanding non-native language in a noisy environment. No hearing loss occurred, but significant effects on crew performance and communication occurred. Permanent Threshold Shifts (PTS) have not been observed in the US shuttle program. Russian specification for noise in spacecraft is 60 dBA (awake) and 50 dBA (asleep) while the U.S. noise specification on ISS is NC 50 (awake) and NC 40 (asleep) with a 85 dBA hazard limit. Background noise levels of ISS modules have measured 56-69 dBA. Treadmill exercise operations measure 77 dBA. Alarms are required to be 20 dBA above ambient. Hearing protection is recommended when noise exceeds 60 dB 24 hour Leq. Countermeasures include hearing protection and design/ engineering controls. Advanced composite materials with excellent low frequency attenuation properties could be applied as a barrier protection around noisy equipment, or used on personal protective equipment worn by the crew. Hearing protection countermeasures include foam ear inserts, passive muff headsets, and active noise reduction headsets. Oto-acoustic emissions (OAE) could be used to monitor effectiveness of hearing protection countermeasures and tailor hearing protection countermeasures to individual crewmembers. Micro-gravity, vibration, toxic fumes, air quality/composition, stress, temperature, physical exertion or some combination of the above factors may have interacted with moderate long-term noise exposure to cause significant hearing loss. Longitudinal studies will need to address what co-morbidity factors, such as radiation, toxicology, microgravity effects (fluid shift), aging, are involved with hearing loss.

Clark, Jonathan B.↗
DOE OSTI2022

Soil moisture thresholds explain a shift from light-limited to water-limited sap velocity in the Central Amazon during the 2015–16 El Niño drought

Transpiration is often considered to be light- but not water-limited in humid tropical rainforests due to abundant soil water, even during the dry seasons. The record-breaking 2015–16 El Niño drought provided a unique opportunity to examine whether transpiration is constrained by water under severe lack of rainfall. We measured sap velocity, soil water content, and meteorological variables in an old-growth upland forest in the Central Amazon throughout the 2015–16 drought. We found a rapid decline in sap velocity (-38 ± 21%, mean ± SD.) and in its temporal variability (-88%) during the drought compared to the wet season. Such changes were accompanied by a marked decline in soil moisture and an increase in temperature and vapor pressure deficit. Sap velocity was largely limited by net radiation during the wet and normal dry seasons; however, it shifted to be primarily limited by soil moisture during the drought. The threshold in which sap velocity became dominated by soil moisture was at 0.33 m 3 m -3 (around -150 kPa in soil matric potential), below which sap velocity dropped steeply. Our study provides evidence for a soil water threshold on transpiration in a moist tropical forest, suggesting a shift from light limitation to water limitation under future climate characterized by increased temperature and an increased frequency, intensity, duration and extent of extreme drought events.

54 ENVIRONMENTAL SCIENCES↗
NASA NTRS1987

Propagation delay measurements from a timing sampler intended for use in space

A 3-micron CMOS timing sampler is described which is a test circuit designed into the Jet Propulsion Labs' CRRES chip to be flown on the Combined Release and Radiation Effects Satellite (CRRES). The timing sampler consists of 64 inverter-pair stages with sampling latches and decoder circuitry. The sampler is used to measure inverter-pair propagation delays, which are nominally 2.5 ns, with a resolution of 100 ps. A simple model was developed to explain the radiation-induced inverter-pair delay shifts in terms of radiation-induced MOSFET threshold-voltage shifts and effective modal capacitances. The magnitude of the shift in pair delay with radiation was estimated at the point where the n-MOSFET threshold voltage became zero. For a 0.7-V-threshold shift, the pair delay increased from its preradiation value by 360 ps for a rising step input and decreased by 190 ps for a falling step input.

Blaes, B. R.↗
DOE OSTI2020

Organic thin-film transistors with a bottom bilayer gate dielectric having a low operating voltage and high operational stability

This study reports on p-channel bottom-gate organic thin-film transistors (OTFT) that achieve low-voltage operation with a thin bilayer gate dielectric of CYTOP/HfO 2 that also leads to high operational stability. A bottom-gate geometry allows the thickness of the gate dielectric to be reduced to 17 nm, thereby increasing the gate dielectric capacitance density to a value of up to 258 nF/cm 2 . All OTFTs yielded threshold voltages (V TH ) lower than -1 V, thereby providing minimum operating voltage (gate to source voltage ~ V TH ) of -1 V with field-effect mobility values in the range from 0.3 to 0.8 cm 2 /Vs and subthreshold swing values below 100 mV/dec. Operational stability during DC bias stress was found similar to that measured in devices with a top-gate geometry, with about 1% of drain current change after 6 h. Here, using a double-stretched exponential function, the operational stability characteristics were modeled. It was found that by increasing the metal oxide layer thickness, the threshold voltage can shift toward positive values under DC stress tests. For CYTOP layer thicknesses above 15 nm, a thicker CYTOP layer was found to shift the threshold voltage in the opposite direction toward negative values. Furthermore, these p-channel bottom-gate organic transistor with a bilayer gate dielectric of CYTOP/HfO 2 combine high mobility, high operational stability, and lower voltage operation of -1 V compared to top-gate OTFTs.

36 MATERIALS SCIENCE↗
NASA NTRS1988

A CMOS matrix for extracting MOSFET parameters before and after irradiation

An addressable matrix of 16 n- and 16 p-MOSFETs was designed to extract the dc MOSFET parameters for all dc gate bias conditions before and after irradiation. The matrix contains four sets of MOSFETs, each with four different geometries that can be biased independently. Thus the worst-case bias scenarios can be determined. The MOSFET matrix was fabricated at a silicon foundry using a radiation-soft CMOS p-well LOCOS process. Co-60 irradiation results for the n-MOSFETs showed a threshold-voltage shift of -3 mV/krad(Si), whereas the p-MOSFETs showed a shift of 21 mV/krad(Si). The worst-case threshold-voltage shift occurred for the n-MOSFETs, with a gate bias of 5 V during the anneal. For the p-MOSFETs, biasing did not affect the shift in the threshold voltage. A parasitic MOSFET dominated the leakage of the n-MOSFET biased with 5 V on the gate during irradiation. Co-60 test results for other parameters are also presented.

Blaes, B. R.↗
DOE OSTI2025

Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs

This paper presents a method to recover the negative threshold voltage shift during high field gate oxide screening of 1.2 kV 4H-SiC MOSFETs with an additional adjustment gate voltage pulse. To reduce field failure rates of the MOSFETs in operation, manufacturers perform a screening treatment to remove devices with extrinsic defects in the oxide. Current gate oxide screening procedures are limited to oxide fields at or below ~9 MV/cm for short durations (<1 s), which is not enough to remove all the devices with extrinsic defects. The results show that by implementing a lower field gate pulse, the threshold voltage shift can be partially recovered, and therefore the maximum screening field and time can be increased. However, both the initial screening pulse and the adjustment pulse require careful calibration to prevent significant degradation of the device threshold voltage, on-resistance, interface state density, or intrinsic lifetime. With a well calibrated set of pulses, higher screening fields can be utilized without significantly damaging the devices. This leads to an improvement in the overall screening efficiency of the process, reducing the number of devices with extrinsic oxide defects entering the field, and improving the reliability of the SiC MOSFETs in operation.

42 ENGINEERING↗
DOE OSTI2021

Maximized Hole Trapping in a Polystyrene Transistor Dielectric from a Highly Branched Iminobis(aminoarene) Side Chain

We synthesized highly branched and electron donating side chain subunits and attached them to polystyrene (PS) used as a dielectric layer in a pentacene field effect transistor. The influence of these groups on dielectric function, charge retention and threshold voltage shifts (ΔV th ) depending on their positions in dielectric multilayers was determined. We compared the observations made on an N-perphenylated iminobisaniline side chain with those from the same side chains modified with ZnO nanoparticles and with an adduct formed from tetracyanoethylene (TCNE). We also synthesized an analogue in which six methoxy groups are present instead of two amine nitrogens. At 6 mol % side chain, hopping transport was sufficient to cause shorting of the gate, while at 2 mol %, charge trapping was observable as transistor threshold voltage shifts (ΔV th ). Here, we created three types of devices: with the substituted PS layer as single layer dielectric, on top of a crosslinked PS layer but in contact with the pentacene (bilayers), and sandwiched between two PS layers in trilayers. Particularly large bias stress effects and ΔV th , larger than the hexamethoxy and previously studied dimethoxy analogs, were observed in the second case and the effects increased with the increasing electron donating properties of the modified side chains. The highest ΔV th was consistent with a majority of the side chains stabilizing trapped charge. Trilayer devices showed decreased charge storage capability compared to previous work in which we used less donating side chains but in higher concentrations. The ZnO and TCNE modifications resulted in slightly more and less negative ΔV th , respectively, when the side chain polystyrene was not in contact with the pentacene and isolated from the gate electrode. The results indicate a likely maximum combination of molecular charge stabilizing activity and side chain concentration that still allows gate dielectric function.

36 MATERIALS SCIENCE↗
NASA NTRS1995

Radiation Evaluation of an Advanced 64Mb 3.3V DRAM and Insights into the Effects of Scaling on Radiation Hardness

In this paper, total ionizing dose radiation evaluations of the Micron 64 Mb 3.3 V, fast page mode DRAM and the IBM LUNA-ES 16 Mb DRAM are presented. The effects of scaling on total ionizing dose radiation hardness are studied utilizing test structures and a series of 16 Mb DRAMs with different feature sizes from the same manufacturing line. General agreement was found between the threshold voltage shifts of 16 Mb DRAM test structures and the threshold voltage measured on complete circuits using retention time measurements. Retention time measurement data from early radiation doses are shown that allow internal failure modes to be distinguished.

Radiation Hardness↗
NASA NTRS1991

CRRES microelectronic test chip

The JPL CRRES chip was designed and fabricated in 1985 and included in the CRRES MEP. MOSFET Matrix results show the effect of shielding on radiation-induced MOSFET threshold voltage shifts and channel mobility degradation. Shielded (middle board) MOSFETs have a threshold-voltage damage factor that is approximately three orders of magnitude smaller than would be estimated from Co-60 ground tests. Unshielded (outer board) MOSFETs have a threshold-voltage damage factor that would be estimated from Co-60 ground tests. Temperature swings as large as 23 C with a 22.5 orbit periodicity affected the MOSFET data and were removed from the data in order to reveal the radiation effects. This experiment demonstrated the feasibility of characterizing MOSFETs in a matrix, thus reducing the complexity and mass of the experiment.

Lin, Y.-S.↗
NASA NTRS1996

Construction of a Piezoresistive Neural Sensor Array

The construction of a piezoresistive - piezoelectric sensor (or actuator) array is proposed using 'neural' connectivity for signal recognition and possible actuation functions. A closer integration of the sensor and decision functions is necessary in order to achieve intrinsic identification within the sensor. A neural sensor is the next logical step in development of truly 'intelligent' arrays. This proposal will integrate 1-3 polymer piezoresistors and MLC electroceramic devices for applications involving acoustic identification. The 'intelligent' piezoresistor -piezoelectric system incorporates printed resistors, composite resistors, and a feedback for the resetting of resistances. A model of a design is proposed in order to simulate electromechanical resistor interactions. The goal of optimizing a sensor geometry for improving device reliability, training, & signal identification capabilities is the goal of this work. At present, studies predict performance of a 'smart' device with a significant control of 'effective' compliance over a narrow pressure range due to a piezoresistor percolation threshold. An interesting possibility may be to use an array of control elements to shift the threshold function in order to change the level of resistance in a neural sensor array for identification, or, actuation applications. The proposed design employs elements of: (1) conductor loaded polymers for a 'fast' RC time constant response; and (2) multilayer ceramics for actuation or sensing and shifting of resistance in the polymer. Other material possibilities also exist using magnetoresistive layered systems for shifting the resistance. It is proposed to use a neural net configuration to test and to help study the possible changes required in the materials design of these devices. Numerical design models utilize electromechanical elements, in conjunction with structural elements in order to simulate piezoresistively controlled actuators and changes in resistance of sensors. The construction of these devices may show significant improvement in ability to interrogate signals and in the control of effective compliance. This work focuses on the development a variety of series/parallel interconnected piezoresistive control elements for the neural sensing function.

Carlson, W. B.↗
NASA NTRS1999

Fluid Physics in a Fluctuating Acceleration Environment

Our program of research aims at developing a stochastic description of the residual acceleration field onboard spacecraft (g-jitter) to describe in quantitative detail its effect on fluid motion. Our main premise is that such a statistical description is necessary in those cases in which the characteristic time scales of the process under investigation are long compared with the correlation time of g-jitter. Although a clear separation between time scales makes this approach feasible, there remain several difficulties of practical nature: (i), g-jitter time series are not statistically stationary but rather show definite dependences on factors such as active or rest crew periods; (ii), it is very difficult to extract reliably the low frequency range of the power spectrum of the acceleration field. This range controls the magnitude of diffusive processes; and (iii), models used to date are Gaussian, but there is evidence that large amplitude disturbances occur much more frequently than a Gaussian distribution would predict. The lack of stationarity does not constitute a severe limitation in practice, since the intensity of the stochastic components changes very slowly during space missions (perhaps over times of the order of hours). A separate analysis of large amplitude disturbances has not been undertaken yet, but it does not seem difficult a priori to devise models that may describe this range better than a Gaussian distribution. The effect of low frequency components, on the other hand, is more difficult to ascertain, partly due to the difficulty associated with measuring them, and partly because they may be indistinguishable from slowly changing averages. This latter effect is further complicated by the lack of statistical stationarity of the time series. Recent work has focused on the effect of stochastic modulation on the onset of oscillatory instabilities as an example of resonant interaction between the driving acceleration and normal modes of the system, and on cavity flow as an example of how an oscillatory response under periodic driving becomes diffusive if the forcing is random instead. This paper describes three different topics that illustrate behavior that is peculiar to a stochastic acceleration field. In the first case, we show that g-jitter can induce effective attractive or repulsive forces between a pair of spherical particles that are suspended in an incompressible fluid of different density provided that the momentum diffusion length is larger than the interparticle separation (as in the case in most colloidal suspensions). Second, a stochastic modulation of the control parameter in the vicinity of a pitchfork or supercritical bifurcation is known not to affect the location of the threshold. We show, however, that resonance between the modulation and linearly stable modes close to onset can lead to a shift in threshold. Finally, we discuss the classical problem of vorticity diffusion away from a plane boundary that is being vibrated along its own plane. Periodic motion with zero average vorticity production results in an exponential decay of the vorticity away from the boundary. Random vibration, on the other hand, results in power law decay away from the boundary even if vorticity production averages to zero.

Drolet, Francois↗
DOE OSTI2025

Radiation Response of Ga 2 O 3 MOSFETs Probed via Focused Particle Beams

Gallium Oxide (Ga 2 O 3 ), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. In conclusion, this research enhances the understanding of Ga2O3 MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.

MOSFET↗
NASA NTRS1992

The response of a zonally symmetric atmosphere to subtropical thermal forcing - Threshold behavior

We consider the response of a zonally symmetric atmosphere to a thermal forcing that is localized in the subtropics. Specifically, the equilibrium temperature distribution has a local subtropical peak and is flat elsewhere, including at the equator. On the basis of inviscid steady-state theory, it is argued that the response to such forcing is one of two distinct types. Below a threshold forcing, the atmosphere adopts a steady state of thermal equilibrium with no meridional flow. With supercritical forcing, this state breaks down and a strong meridional circulation is predicted. The threshold forcing value is that at which the absolute vorticity of the zonal flow (in gradient balance with the equilibrium temperatures) vanishes at the upper boundary. These inviscid predictions are tested in a zonally symmetric numerical model; while the model viscosity shifts the threshold and otherwise modifies the response, the threshold is clearly evident in the model behavior.

Plumb, R. A.↗
DOE OSTI2024

Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation

Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on gallium nitride high electron mobility transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 × 10 12 to 3.76 × 10 14 cm 2 , and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (∼750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.

gallium nitride↗
DOE OSTI2020

Theory of the Tertiary Instability and the Dimits Shift from Reduced Drift-Wave Models

Tertiary modes in electrostatic drift-wave turbulence are localized near extrema of the zonal velocity U(x) with respect to the radial coordinate x. We argue that these modes can be described as quantum harmonic oscillators with complex frequencies, so their spectrum can be readily calculated. The corresponding growth rate $γ$ TI is derived within the modified Hasegawa-Wakatani model. We show that $γ$TI equals the primary-instability growth rate plus a term that depends on the local U''; hence, the instability threshold is shifted compared to that in homogeneous turbulence. This provides a generic explanation of the well-known yet elusive Dimits shift, which we find explicitly in the Terry-Horton limit. Linearly unstable tertiary modes either saturate due to the evolution of the zonal density or generate radially propagating structures when the shear |U'| is sufficiently weakened by viscosity. The Dimits regime ends when such structures are generated continuously.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Theory of the tertiary instability and the Dimits shift from reduced drift-wave models

Tertiary modes in electrostatic drift-wave turbulence are localized near extrema of the zonal velocity $U(x)$ with respect to the radial coordinate $x$. We argue that these modes can be described as quantum harmonic oscillators with complex frequencies, so their spectrum can be readily calculated. The corresponding growth rate $\gamma_{\rm TI}$ is derived within the modified Hasegawa--Wakatani model. We show that $\gamma_{\rm TI}$ equals the primary-instability growth rate plus a term that depends on the local $U''$; hence, the instability threshold is shifted compared to that in homogeneous turbulence. This provides a generic explanation of the well-known yet elusive Dimits shift, which we find explicitly in the Terry--Horton limit. Linearly unstable tertiary modes either saturate due to the evolution of the zonal density or generate radially propagating structures when the shear $|U'|$ is sufficiently weakened by viscosity. The Dimits regime ends when such structures are generated continuously.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗