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CRRES microelectronic test chip

The JPL CRRES chip was designed and fabricated in 1985 and included in the CRRES MEP. MOSFET Matrix results show the effect of shielding on radiation-induced MOSFET threshold voltage shifts and channel mobility degradation. Shielded (middle board) MOSFETs have a threshold-voltage damage factor that is approximately three orders of magnitude smaller than would be estimated from Co-60 ground tests. Unshielded (outer board) MOSFETs have a threshold-voltage damage factor that would be estimated from Co-60 ground tests. Temperature swings as large as 23 C with a 22.5 orbit periodicity affected the MOSFET data and were removed from the data in order to reveal the radiation effects. This experiment demonstrated the feasibility of characterizing MOSFETs in a matrix, thus reducing the complexity and mass of the experiment.

Lin, Y.-S.↗

Construction of a Piezoresistive Neural Sensor Array

The construction of a piezoresistive - piezoelectric sensor (or actuator) array is proposed using 'neural' connectivity for signal recognition and possible actuation functions. A closer integration of the sensor and decision functions is necessary in order to achieve intrinsic identification within the sensor. A neural sensor is the next logical step in development of truly 'intelligent' arrays. This proposal will integrate 1-3 polymer piezoresistors and MLC electroceramic devices for applications involving acoustic identification. The 'intelligent' piezoresistor -piezoelectric system incorporates printed resistors, composite resistors, and a feedback for the resetting of resistances. A model of a design is proposed in order to simulate electromechanical resistor interactions. The goal of optimizing a sensor geometry for improving device reliability, training, & signal identification capabilities is the goal of this work. At present, studies predict performance of a 'smart' device with a significant control of 'effective' compliance over a narrow pressure range due to a piezoresistor percolation threshold. An interesting possibility may be to use an array of control elements to shift the threshold function in order to change the level of resistance in a neural sensor array for identification, or, actuation applications. The proposed design employs elements of: (1) conductor loaded polymers for a 'fast' RC time constant response; and (2) multilayer ceramics for actuation or sensing and shifting of resistance in the polymer. Other material possibilities also exist using magnetoresistive layered systems for shifting the resistance. It is proposed to use a neural net configuration to test and to help study the possible changes required in the materials design of these devices. Numerical design models utilize electromechanical elements, in conjunction with structural elements in order to simulate piezoresistively controlled actuators and changes in resistance of sensors. The construction of these devices may show significant improvement in ability to interrogate signals and in the control of effective compliance. This work focuses on the development a variety of series/parallel interconnected piezoresistive control elements for the neural sensing function.

Carlson, W. B.↗

Fluid Physics in a Fluctuating Acceleration Environment

Our program of research aims at developing a stochastic description of the residual acceleration field onboard spacecraft (g-jitter) to describe in quantitative detail its effect on fluid motion. Our main premise is that such a statistical description is necessary in those cases in which the characteristic time scales of the process under investigation are long compared with the correlation time of g-jitter. Although a clear separation between time scales makes this approach feasible, there remain several difficulties of practical nature: (i), g-jitter time series are not statistically stationary but rather show definite dependences on factors such as active or rest crew periods; (ii), it is very difficult to extract reliably the low frequency range of the power spectrum of the acceleration field. This range controls the magnitude of diffusive processes; and (iii), models used to date are Gaussian, but there is evidence that large amplitude disturbances occur much more frequently than a Gaussian distribution would predict. The lack of stationarity does not constitute a severe limitation in practice, since the intensity of the stochastic components changes very slowly during space missions (perhaps over times of the order of hours). A separate analysis of large amplitude disturbances has not been undertaken yet, but it does not seem difficult a priori to devise models that may describe this range better than a Gaussian distribution. The effect of low frequency components, on the other hand, is more difficult to ascertain, partly due to the difficulty associated with measuring them, and partly because they may be indistinguishable from slowly changing averages. This latter effect is further complicated by the lack of statistical stationarity of the time series. Recent work has focused on the effect of stochastic modulation on the onset of oscillatory instabilities as an example of resonant interaction between the driving acceleration and normal modes of the system, and on cavity flow as an example of how an oscillatory response under periodic driving becomes diffusive if the forcing is random instead. This paper describes three different topics that illustrate behavior that is peculiar to a stochastic acceleration field. In the first case, we show that g-jitter can induce effective attractive or repulsive forces between a pair of spherical particles that are suspended in an incompressible fluid of different density provided that the momentum diffusion length is larger than the interparticle separation (as in the case in most colloidal suspensions). Second, a stochastic modulation of the control parameter in the vicinity of a pitchfork or supercritical bifurcation is known not to affect the location of the threshold. We show, however, that resonance between the modulation and linearly stable modes close to onset can lead to a shift in threshold. Finally, we discuss the classical problem of vorticity diffusion away from a plane boundary that is being vibrated along its own plane. Periodic motion with zero average vorticity production results in an exponential decay of the vorticity away from the boundary. Random vibration, on the other hand, results in power law decay away from the boundary even if vorticity production averages to zero.

Drolet, Francois↗

The response of a zonally symmetric atmosphere to subtropical thermal forcing - Threshold behavior

We consider the response of a zonally symmetric atmosphere to a thermal forcing that is localized in the subtropics. Specifically, the equilibrium temperature distribution has a local subtropical peak and is flat elsewhere, including at the equator. On the basis of inviscid steady-state theory, it is argued that the response to such forcing is one of two distinct types. Below a threshold forcing, the atmosphere adopts a steady state of thermal equilibrium with no meridional flow. With supercritical forcing, this state breaks down and a strong meridional circulation is predicted. The threshold forcing value is that at which the absolute vorticity of the zonal flow (in gradient balance with the equilibrium temperatures) vanishes at the upper boundary. These inviscid predictions are tested in a zonally symmetric numerical model; while the model viscosity shifts the threshold and otherwise modifies the response, the threshold is clearly evident in the model behavior.

Plumb, R. A.↗

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗

2D Quantum Transport Modeling in Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗

2D Quantum Mechanical Study of Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗

Single Particle Damage Events in Candidate Star Camera Sensors

Si charge coupled devices (CCDs) are currently the preeminent detector in star cameras as well as in the near ultraviolet (uv) to visible wavelength region for astronomical observations in space and in earth-observing space missions. Unfortunately, the performance of CCDs is permanently degraded by total ionizing dose (TID) and displacement damage effects. TID produces threshold voltage shifts on the CCD gates and displacement damage reduces the charge transfer efficiency (CTE), increases the dark current, produces dark current nonuniformities and creates random telegraph noise in individual pixels. In addition to these long term effects, cosmic ray and trapped proton transients also interfere with device operation on orbit. In the present paper, we investigate the dark current behavior of CCDs - in particular the formation and annealing of hot pixels. Such pixels degrade the ability of a CCD to perform science and also can present problems to the performance of star camera functions (especially if their numbers are not correctly anticipated). To date, most dark current radiation studies have been performed by irradiating the CCDs at room temperature but this can result in a significantly optimistic picture of the hot pixel count. We know from the Hubble Space Telescope (HST) that high dark current pixels (so-called hot pixels or hot spikes) accumulate as a function of time on orbit. For example, the HST Advanced Camera for Surveys/Wide Field Camera instrument performs monthly anneals despite the loss of observational time, in order to partially anneal the hot pixels. Note that the fact that significant reduction in hot pixel populations occurs for room temperature anneals is not presently understood since none of the commonly expected defects in Si (e.g. divacancy, E center, and A-center) anneal at such a low temperature. A HST Wide Field Camera 3 (WFC3) CCD manufactured by E2V was irradiated while operating at -83C and the dark current studied as a function of temperature while the CCD was warmed to a sequence of temperatures up to a maximum of +30C. The device was then cooled back down to -83 and re-measured. Hot pixel populations were tracked during the warm-up and cool-down. Hot pixel annealing began below 40C and the anneal process was largely completed before the detector reached +3OC. There was no apparent sharp temperature dependence in the annealing. Although a large fraction of the hot pixels fell below the threshold to be counted as a hot pixel, they nevertheless remained warmer than the remaining population. The details of the mechanism for the formation and annealing of hot pixels is not presently understood, but it appears likely that hot pixels are associated with displacement damage occurring in high electric field regions.

Marshall, Paul↗

Effects of ionizing radiation on CCD's

The effects of 1.2 MeV gamma radiation and 20 MeV electrons on the operational characteristics of CCDs are studied. The effects of ionizing radiation on the charge transfer efficiency, dark current, and input/output circuitry are described. The improved radiation hardness of buried channel CCDs is compared to surface channel results. Both ion implanted and epitaxial layer buried channel device results are included. The advantages of using a single thickness SiO2 gate dielectric are described. The threshold voltage shifts and surface state density changes of dry, steam, and HCl doped oxides are discussed. Recent results on the recovery times and total dose effects of high dose rate pulses of 20 MeV electrons are reported.

Hartsell, G. A.↗

Near threshold response of a wave shifted Cerenkov radiator to heavy ions

The response of Pilot 425 to heavy ions with energies less than 600 MeV/amu beta approximately 0.8 is examined both theoretically and experimentally. Measurements are presented from an experiment which employed a Ne-20 beam at many energies below 575 MeV/amu. The signal is assumed to come from three sources: (1) Cerenkov light from the heavy ion, (2) Cerenkov light from secondary electrons, and (3) scintillation of the radiator. It is found that the effective index of refraction is 1.518 and that scintillation is present at a level of approximately 2.7 percent of the Cerenkov signal for beta = 1 for Ne-20. The first of these values differs from values previously quoted in the literature.

Ahlen, S. P.↗

A 163 micron laser heterodyne radiometer for OH

A 163 micron (1.836 THz) radiometer developed for airplane and/or balloon platforms is described. The laser local oscillator is a CO2 pumped methanol laser operating at a frequency which is approx. 1 GHz from the J = 3/2 - 1/2 transition of OH. The laser is used directly as a local oscillator or is translated in frequency to closer coincidence with the OH emission, depending on achieved detector IF bandwidth. Frequency translation techniques which are described are diode mixing and a method of single sideband generation using an external Stark modulated gas cell. The photoconductive mixer used is a strained Ge crystal, doped with Ga, originally used as an incoherent detector. The uniaxial strain on the Ga doped Ge crystal shifts the threshold for photoconduction from 100/cm to frequencies as low as 50/cm. These detectors are currently being characterized as mixers in the laboratory. Of particular interest are the effect of local oscillator power and strain on IF, bandwidth detector impedance, and conversion loss. Preliminary results of these tests are described and compared with theorectical expectations.

Pickett, H. M.↗

Total-dose and dose-rate dependence of proton damage in MOS devices during and after irradiation

Rad-hard CMOS/bulk inverters with input gates high and low were irradiated by protons with a nominal energy of 8 MeV in an effort to determine the total-dose and dose-rate dependence of threshold voltage shifts, both during and immediately after irradiation and over extended periods of time thereafter. It is shown that the effects in rad-hard MOS devices which are produced by specific proton and electron energies in the space environment could be simulated by cobalt-60 induced effects through careful and proper selection of total does and dose rates. This selection must be based on an experimentally established relationship of Co-60 to electron or proton damage. It is demonstrated that the simulation can be accomplished both during and after irradiation, in the long-term postirradiation period, as well as in the damage state immediately after bombardment.

Stassinopoulos, E. G.↗

MOSFET and MOS capacitor responses to ionizing radiation

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

Benedetto, J. M.↗

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

High-performance pseudomorphic In(y)Ga(1-y)As/Al0.15-Ga0.85As y = 0.05-0.2 MODFET's grown by MBE have been characterized at dc (300 and 77 K) and RF frequencies. Transconductances as high 310 and 380 mS/mm and drain currents as high as 290 and 310 mA/mm were obtained at 300 and 77 K, respectively, for 1-micron gate lengths and 3-micron source-drain spacing devices. Lack of persistent trapping effects, I-V collapse, and threshold voltage shifts observed with these devices are attributed to the use of low mole fraction Al(x)Ga(1-x)As while still maintaining two-dimensional electron gas concentrations of about 1.3 x to the 12th per sq cm. Detailed microwave S-parameter measurements indicate a current gain cut-off frequency of 24.5 GHz when y = 0.20, which is as much as 100 percent better than similar GaAs/AlGaAs MODFET structures, and a maximum frequency of oscillation of 40 GHz.

Ketterson, Andrew A.↗

Linear response theory for annealing of radiation damage in semiconductor devices

A theoretical study of the radiation/annealing response of MOS ICs is described. Although many experiments have been performed in this field, no comprehensive theory dealing with radiation/annealing response has been proposed. Many attempts have been made to apply linear response theory, but no theoretical foundation has been presented. The linear response theory outlined here is capable of describing a broad area of radiation/annealing response phenomena in MOS ICs, in particular, both simultaneous irradiation and annealing, as well as short- and long-term annealing, including the case when annealing is nearing completion. For the first time, a simple procedure is devised to determine the response function from experimental radiation/annealing data. In addition, this procedure enables us to study the effect of variable temperature and dose rate, effects which are of interest in spaceflight. In the past, the shift in threshold potential due to radiation/annealing has usually been assumed to depend on one variable: the time lapse between an impulse dose and the time of observation. While such a suggestion of uniformity in time is certainly true for a broad range of radiation annealing phenomena, it may not hold for some ranges of the variables of interest (temperature, dose rate, etc.). A response function is projected which is dependent on two variables: the time of observation and the time of the impulse dose. This dependence on two variables allows us to extend the theory to the treatment of a variable dose rate. Finally, the linear theory is generalized to the case in which the response is nonlinear with impulse dose, but is proportional to some impulse function of dose. A method to determine both the impulse and response functions is presented.

Litovchenko, Vitaly↗

CRRES microelectronic test chip orbital data. II

Data from a MOSFET matrix on two JPL (CIT Jet Propulsion Laboratory) CRRES (Combined Release and Radiation Effects Satellite) chips, each behind different amounts of shielding, are presented. Space damage factors are nearly identical to ground test values for pMOSFETs. The results from neighboring rows of MOSFETs show similar radiation degradation. The SRD (Space Radiation Dosimeter) is used to measure the total dose accumulated by the JPL chips. A parameter extraction algorithm that does not underestimate threshold voltage shifts is used. Temperature effects are removed from the MOSFET data.

Soli, G. A.↗