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We report on the SEE and TID tests of higher density flash memories. Stand-by currents and full functional tests were used to characterize the response of radiation effects.
This viewgraph presentation reviews the low temperature, Total Ionizing Dose (TID) tests of radiation hardened serial to parallel converter to be used on the James Webb Space Telescope. The test results show that the original HV583 level shifter - a COTS part -was not suitable for JWST because the supply currents exceeded specs after 20 krad( Si) .The HV584 - functionally similar to the HV583 -was designed using RHBD approach that reduced the leakage currents to within acceptable levels and had only a small effect on the level-shifted output voltage.
The degradation of the LM193 dual voltage comparator has been studied with different types of TID dose rates. These include several different constant dose rates and a variable dose rate that simulates the behavior of a solar flare. The varying dose rate of a solar flare is the type of real total dose exposure that a space mission might see in lunar or Martian orbit. A comparison of these types of dose rates is made to explore how well the constant dose rates used for typical part testing predicts the performance during a simulated space-like mission.
We investigate techniques for estimating the contributions to TID hardness variability for families of linear bipolar technologies, determining how part-to-part and lot-to-lot variability change for different part types in the process.
The degradation of the LM193 dual voltage comparator has been studied at different TID dose rate profiles, including several different constant dose rates and a variable dose rate that simulates the behavior of a solar flare. A comparison of results following constant dose rate vs. variable dose rates is made to explore how well the constant dose rates used for typical part testing predict the performance during a simulated space-like mission. Testing at a constant dose rate equal to the lowest dose rate seen during the simulated flare provides an extremely conservative estimate of the overall amount of degradation. A constant dose rate equal to the average dose rate is also more conservative than the variable rate. It appears that, for this part, weighting the dose rates by the amount of total dose received at each rate (rather than the amount of time at each dose rate) results in an average rate that produces an amount of degradation that is a reasonable approximation to that received by the variable rate.
Radiation Hardness Assurance (RHA) methodologies against Total Ionizing Dose (TID) degradation impose rigorous statistical treatments for data from a part's Radiation Lot Acceptance Test (RLAT) and/or its historical performance. However, no similar methods exist for using "similarity" data - that is, data for similar parts fabricated in the same process as the part under qualification. This is despite the greater difficulty and potential risk in interpreting of similarity data. In this work, we develop methods to disentangle part-to-part, lot-to-lot and part-type-to-part-type variation. The methods we develop apply not just for qualification decisions, but also for quality control and detection of process changes and other "out-of-family" behavior. We begin by discussing the data used in ·the study and the challenges of developing a statistic providing a meaningful measure of degradation across multiple part types, each with its own performance specifications. We then develop analysis techniques and apply them to the different data sets.
This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot date codes, manufacturers, circuit design, and test conditions are analyzed herein.
We develop methods for bounding part-to-part variation in TID data. When used in conjunction with statistical radiation environment models, these methods allow development of RHA that deliver estimated piece part reliability for any desired confidence level, moving beyond risk avoidance methodologies based on radiation design margin. Two methods are developed, and their results compared for realistic data.
We develop methods for bounding part-to-part variation in TID data. When used in conjunction with statistical radiation environment models, these methods allow development of RHA that deliver estimated piece part reliability for any desired confidence level, moving beyond risk avoidance methodologies based on radiation design margin. Two methods are developed, and their results compared for realistic data.
We report on TID and SEE tests of multi-level and higher density flash memories. Stand-by currents and functionality tests were used to characterize the response of radiation-induced failures. The radiation-induced failures can be categorized as followings: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up.
This paper reports recent total ionizing dose (TID) test results post 300 kRad(Si) for a variety of common part types evaluated for use on NASA/JPL’s Europa Clipper mission.
This paper reports and analyzes recent single event effects (SEE) and total ionizing dose (TID) test results for the Analog Devices RH3845 synchronous current mode step-down controller. This device has been tested and evaluated for use in a harsh space radiation environment.
This paper investigates flight circuit application bias and irradiation dose rate dependencies (“test as you fly” conditions) in the total ionizing dose (TID) response of various electronic components considered for use in a space radiation environment.
The rapid evolution of electronics has heralded countless benefits to humanity, enabling increases in computing power while decreasing costs. However, the constantly changing semiconductor device landscape proves to be an immense challenge for the reliability community, especially for those concerned with radiation effects on microelectronics. Changes in device manufacturing, from device structure to processing steps, may and often do change the way the device responds to radiation. While radiation hardened parts are not as much of a reliability concern, they also lag behind commercial off-the-shelf, or COTS, parts in terms of computing capabilities, some by over a decade. Many missions may have no choice but to utilize COTS. As such, these missions need to ensure their parts are reliable in the face of total ionizing dose (TID). However, part and testing facility costs limit the amount of testing possible.
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Single-event effects and total ionizing dose testing is described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results.
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Explore the source record for details and available documents.