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At least 37 records · Page 2

CMOS VLSI Active-Pixel Sensor for Tracking

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 ~ 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The diagonal-switch and memory addresses would be generated by the on-chip controller. The memory array would be large enough to hold differential signals acquired from all 8 windows during a frame period. Following the rapid sampling from all the windows, the contents of the memory array would be read out sequentially by use of a capacitive transimpedance amplifier (CTIA) at a maximum data rate of 10 MHz. This data rate is compatible with an update rate of almost 10 Hz, even in full-frame operation

Pain, Bedabrata↗

Analog Nonvolatile Computer Memory Circuits

In nonvolatile random-access memory (RAM) circuits of a proposed type, digital data would be stored in analog form in ferroelectric field-effect transistors (FFETs). This type of memory circuit would offer advantages over prior volatile and nonvolatile types: In a conventional complementary metal oxide/semiconductor static RAM, six transistors must be used to store one bit, and storage is volatile in that data are lost when power is turned off. In a conventional dynamic RAM, three transistors must be used to store one bit, and the stored bit must be refreshed every few milliseconds. In contrast, in a RAM according to the proposal, data would be retained when power was turned off, each memory cell would contain only two FFETs, and the cell could store multiple bits (the exact number of bits depending on the specific design). Conventional flash memory circuits afford nonvolatile storage, but they operate at reading and writing times of the order of thousands of conventional computer memory reading and writing times and, hence, are suitable for use only as off-line storage devices. In addition, flash memories cease to function after limited numbers of writing cycles. The proposed memory circuits would not be subject to either of these limitations. Prior developmental nonvolatile ferroelectric memories are limited to one bit per cell, whereas, as stated above, the proposed memories would not be so limited. The design of a memory circuit according to the proposal must reflect the fact that FFET storage is only partly nonvolatile, in that the signal stored in an FFET decays gradually over time. (Retention times of some advanced FFETs exceed ten years.) Instead of storing a single bit of data as either a positively or negatively saturated state in a ferroelectric device, each memory cell according to the proposal would store two values. The two FFETs in each cell would be denoted the storage FFET and the control FFET. The storage FFET would store an analog signal value, between the positive and negative FFET saturation values. This signal value would represent a numerical value of interest corresponding to multiple bits: for example, if the memory circuit were designed to distinguish among 16 different analog values, then each cell could store 4 bits. Simultaneously with writing the signal value in the storage FFET, a negative saturation signal value would be stored in the control FFET. The decay of this control-FFET signal from the saturation value would serve as a model of the decay, for use in regenerating the numerical value of interest from its decaying analog signal value. The memory circuit would include addressing, reading, and writing circuitry that would have features in common with the corresponding parts of other memory circuits, but would also have several distinctive features. The writing circuitry would include a digital-to-analog converter (DAC); the reading circuitry would include an analog-to-digital converter (ADC). For writing a numerical value of interest in a given cell, that cell would be addressed, the saturation value would be written in the control FFET in that cell, and the non-saturation analog value representing the numerical value of interest would be generated by use of the DAC and stored in the storage FFET in that cell. For reading the numerical value of interest stored in a given cell, the cell would be addressed, the ADC would convert the decaying control and storage analog signal values to digital values, and an associated fast digital processing circuit would regenerate the numerical value from digital values.

MacLeod, Todd↗

Magnetic Analog Random-Access Memory

Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.

Katti, Romney R.↗

Integrated, nonvolatile, high-speed analog random access memory

This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.

Katti, Romney R.↗

Digital tracking loops for a programmable digital modem

In this paper, an analysis and hardware emulation of the tracking loops for a very flexible programmable digital modem (PDM) will be presented. The modem is capable of being programmed for 2, 4, 8, 16-PSK, 16-QAM, MSK, and Offset-QPSK modulation schemes over a range of data rates from 2.34 to 300 Mbps with programmable spectral occupancy from 1.2 to 1.8 times the symbol rate; these operational parameters are executable in burst or continuous mode. All of the critical processing in both the modulator and demodulator is done at baseband with very high-speed digital hardware and memory. Quadrature analog front-ends are used for translation between baseband and the IF center frequency. The modulator is based on a table lookup approach, where precomputed samples are stored in memory and clocked out according to the incoming data pattern. The sample values are predistorted to counteract the effects of the other filtering functions in the link as well as any transmission impairments. The demodulator architecture was adapted from a joint estimator-detector (JED) mathematical analysis. Its structure is applicable to most signalling formats that can be represented in a two-dimensional space. The JED realization uses interdependent, mutually aiding tracking loops with post-detection data feedback. To expedite and provide for more reliable synchronization, initial estimates for these loops are computed in a parallel acquisition processor. The cornerstone of the demodulator realization is the pre-averager received data filter which allows operation over a broad range of data rates without any hardware changes and greatly simplifies the implementation complexity. The emulation results confirmed tracking loop operation over the entire range of operational parameters listed above, as well as the capability of achieving and maintaining synchronization at BER's in excess of 10(exp -1). The emulation results also showed very close agreement with the tracking loop analysis, and validated the resolution apportionment of the various hardware elements in the tracking loops.

Poklemba, John J.↗

A cycle timer for testing electric vehicles

The paper presents a cycle timer which enables the accurate following and repetition of SAE driving schedules of stop and go cycles, for electric vehicles, by reducing the human factor. The system which consists of a programmable read-only memory (PROM) stores each of these cycles, which are detailed, on its own plug-in card. The actual vehicle speed, and the PROM indicated desired speed are displayed on a dual scale meter allowing the driver to match them. A speed change is preceded by a half second buzzer warning and a new cycle by a one second warning. The PROM controls the recycle start time as well as the buzzer activation. A 5 volt regulator providing logic power, and a 12 volt dc-dc converter providing analog and memory power are described.

Soltis, R. F.↗

Solid-state thin-film memistor for electronic neural networks

This paper reports on a tungsten-oxide-based, nonvolatile, electrically reprogrammable, variable resistance device as an analog synaptic memory connection for electronic neural networks. A voltage controlled, reversible injection of H(+) ions in electrochromic thin films of WO3 is utilized to modulate its resistance. A hygroscopic thin film of Cr2O3 is the source of H(+) ions. The resistance of the device can be tailored and stabilized over a wide dynamic range (about 4 orders of magnitude), and the programming speed is modulated by the control voltage. The suitability of such a device in terms of its response speed, reversibility, stability, and cyclability for its use in electronic neural networks is discussed.

Thakoor, S.↗

One GHz digitizer for space based laser altimeter

This is the final report for the research and development of the one GHz digitizer for space based laser altimeter. A feasibility model was designed, built, and tested. Only partial testing of essential functions of the digitizer was completed. Hybrid technology was incorporated which allows analog storage (memory) of the digitally sampled data. The actual sampling rate is 62.5 MHz, but executed in 16 parallel channels, to provide an effective sampling rate of one GHz. The average power consumption of the one GHz digitizer is not more than 1.5 Watts. A one GHz oscillator is incorporated for timing purposes. This signal is also made available externally for system timing. A software package was also developed for internal use (controls, commands, etc.) and for data communication with the host computer. The digitizer is equipped with an onboard microprocessor for this purpose.

Staples, Edward J.↗

Improved Writing-Conductor Designs For Magnetic Memory

Writing currents reduced to practical levels. Improved conceptual designs for writing conductors in micromagnet/Hall-effect random-access integrated-circuit memory reduces electrical current needed to magnetize micromagnet in each memory cell. Basic concept of micromagnet/Hall-effect random-access memory presented in "Magnetic Analog Random-Access Memory" (NPO-17999).

Wu, Jiin-Chuan↗

Investigation into Cloud Computing for More Robust Automated Bulk Image Geoprocessing

Geospatial resource assessments frequently require timely geospatial data processing that involves large multivariate remote sensing data sets. In particular, for disasters, response requires rapid access to large data volumes, substantial storage space and high performance processing capability. The processing and distribution of this data into usable information products requires a processing pipeline that can efficiently manage the required storage, computing utilities, and data handling requirements. In recent years, with the availability of cloud computing technology, cloud processing platforms have made available a powerful new computing infrastructure resource that can meet this need. To assess the utility of this resource, this project investigates cloud computing platforms for bulk, automated geoprocessing capabilities with respect to data handling and application development requirements. This presentation is of work being conducted by Applied Sciences Program Office at NASA-Stennis Space Center. A prototypical set of image manipulation and transformation processes that incorporate sample Unmanned Airborne System data were developed to create value-added products and tested for implementation on the "cloud". This project outlines the steps involved in creating and testing of open source software developed process code on a local prototype platform, and then transitioning this code with associated environment requirements into an analogous, but memory and processor enhanced cloud platform. A data processing cloud was used to store both standard digital camera panchromatic and multi-band image data, which were subsequently subjected to standard image processing functions such as NDVI (Normalized Difference Vegetation Index), NDMI (Normalized Difference Moisture Index), band stacking, reprojection, and other similar type data processes. Cloud infrastructure service providers were evaluated by taking these locally tested processing functions, and then applying them to a given cloud-enabled infrastructure to assesses and compare environment setup options and enabled technologies. This project reviews findings that were observed when cloud platforms were evaluated for bulk geoprocessing capabilities based on data handling and application development requirements.

Brown, Richard B.↗

RAM digital filter

Modification of conventional digital counting filter is designed to store all possible combinations of filter coefficients in random access memory. Filter includes analog-to-digital coverter, X shift register, memory, accumulator, and digital-to-analog converter.

Zohar, S.↗

CCD Memory

CCD memory device yields over 6.4 x 10 to the eighth power levels of information on single chip. Charge-coupled device (CCD) demonstrated to operate as either read-only-memory (ROM) or photon-programmable memory with capacity of 640,000 bits, with each bit capable of being weighted to more than 1,000 discrete analog levels. Larger memory capacities now possible using proposed approach in conjunction with CCD's now being fabricated, which yield over 4 x 10 to the ninth power discrete levels of information on single chip.

Janesick, James R.↗

An evaluation of the Intel 2920 digital signal processing integrated circuit

The circuit consists of a digital to analog converter, accumulator, read write memory and UV erasable read only memory. The circuit can convert an analog signal to a digital representation, perform mathematical operations on the digital signal and subsequently convert the digital signal to an analog output. Development software tailored for programming the 2920 is presented.

Heller, J.↗

Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

MacLeod, Todd C.↗

Design of a Multi-Level/Analog Ferroelectric Memory Device

Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

MacLeod, Todd C.↗

The Ranicon - A resistive anode image converter

A versatile photon and charged particle imaging system is described. The Ranicon employs a microchannel electron multiplier plate to convert each detected event into a charge signal. This charge pulse is proximity-focused onto a large-area resistive anode plate equipped with pickup electrodes on its edges. Each event is located electronically by the ratios of the charges collected at the edges or by the differences of the signals' risetimes. One- or two-dimensional pictures are built up by storing events digitally (e.g., a core memory) or in analog form (e.g., a storage oscilloscope). Compact laboratory models have been constructed and tested. Operating characteristics, applications, limitations, and advantages of the Ranicon are discussed.

Lampton, M.↗

NASA Tech Briefs, April 2007

Topics include: Wearable Environmental and Physiological Sensing Unit; Broadband Phase Retrieval for Image-Based Wavefront Sensing; Filter Function for Wavefront Sensing Over a Field of View; Iterative-Transform Phase Retrieval Using Adaptive Diversity; Wavefront Sensing With Switched Lenses for Defocus Diversity; Smooth Phase Interpolated Keying; Maintaining Stability During a Conducted-Ripple EMC Test; Photodiode Preamplifier for Laser Ranging With Weak Signals; Advanced High-Definition Video Cameras; Circuit for Full Charging of Series Lithium-Ion Cells; Analog Nonvolatile Computer Memory Circuits; JavaGenes Molecular Evolution; World Wind 3D Earth Viewing; Lithium Dinitramide as an Additive in Lithium Power Cells; Accounting for Uncertainties in Strengths of SiC MEMS Parts; Ion-Conducting Organic/Inorganic Polymers; MoO3 Cathodes for High-Temperature Lithium Thin-Film Cells; Counterrotating-Shoulder Mechanism for Friction Stir Welding; Strain Gauges Indicate Differential-CTE-Induced Failures; Antibodies Against Three Forms of Urokinase; Understanding and Counteracting Fatigue in Flight Crews; Active Correction of Aberrations of Low-Quality Telescope Optics; Dual-Beam Atom Laser Driven by Spinor Dynamics; Rugged, Tunable Extended-Cavity Diode Laser; Balloon for Long-Duration, High-Altitude Flight at Venus; and Wide-Temperature-Range Integrated Operational Amplifier.

Source record↗