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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Oxide superconductors under magnetic field

One of the current most serious problems for the oxide superconductors from the standpoint of practical application is the various novel features derived mainly from their extremely short coherence. In particular, the coherence length so far observed in the cuprate superconductors is in the range of 0.1 nm perpendicular to the CuO2 plane. This seems to be creating most of the difficulties in the device fabrication and in the performance under the magnetic field. Some of the superconducting properties under the magnetic field will be discussed in terms of the short coherence length. A model will be presented based on the gradual strengthening of the pinning force with decrease in temperature and the weak coupling at the grain boundaries. Secondly, the broadening of the superconducting transition under the magnetic field is discussed. This is observed significantly only when the field is applied perpendicular to the basal plane and the relative orientation of the current to the field is insignificant in determining the extent of the broadening. Besides, the change in the strength of the pinning force does not affect the width of the broadening. From these observations discussions will be made on a model based on the giant fluctuation. Based on this model, it is predicted that the coherence length along the c-axis will be the single most important material parameter to determine the performance of the superconductor under a strong magnetic field. It seems that BYCO is superior in this regard to Bi- or Tl-systems as far as the performance at 77 K is considered, although another material with the coherence length slightly longer along the c-axis is still highly desired.

Kitazawa, K.↗
NASA NTRS1991

Oxide superconductors under magnetic field

One of the current most serious problems for the oxide superconductors from the standpoint of practical application is the various novel features derived mainly from their extremely short coherence. In particular, the coherence length so far observed in the cuprate superconductors is in the range of 0.1 nm perpendicular to the CuO2 plane. This seems to be creating most of the difficulties in the device fabrication and in the performance under the magnetic field. Some of the superconducting properties under the magnetic field will be discussed in terms of the short coherence length. A model will be presented based on the gradual strengthening of the pinning force with decrease in temperature and the weak coupling at the grain boundaries. Secondly, the broadening of the superconducting transition under the magnetic field is discussed. This is observed significantly only when the field is applied perpendicular to the basal plane and the relative orientation of the current to the field is insignificant in determining the extent of broadening. Besides, the change in the strength of the pinning force does not affect the width of the broadening. From these observations discussions will be made on a model based on the giant fluctuation. Based on this model, it is predicted that the coherence length along the c-axis will be the single most important material parameter to determine the performance of the superconductor under a strong magnetic field. It seems that BYCO is superior in this regard to Bi- or Tl-systems as far as the performance at 77 K is considered, although another material with the coherence length slightly longer along the c-axis is still highly desired.

Kitazawa, K.↗
NASA NTRS2014

Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions. Contrast extinction analysis of these dislocation lines reveals they are edge type basal plane dislocations that track the growth direction. Polytype phase transition and stacking faults were observed by high-resolution TEM (HRTEM), in agreement with SWBXT and Raman scattering.

Single Crystal↗
NASA NTRS1971

Photovoltage inversion effect and its application to semiconductor surface studies: CdS.

Experimental results on the surface states of the basal plane of CdS are presented and discussed in the light of a model of the photovoltage inversion effect. It is found that the surface states associated with this effect are in poor communication with the bulk and under normal conditions may require long periods of time to reach equilibrium. A combination of photovoltage inversion, photovoltage quenching, and photovoltage spectroscopy is believed to constitute a very effective tool for the study of surfaces of wide energy gap semiconductors.

Lagowski, J.↗
NASA NTRS1973

Fracture in hexagonal closed packed metals, zinc and beryllium

It is shown that fracture in zinc and beryllium is nucleation controlled and is independent of the nature of the barrier from which fracture nucleates. The double cantilever cleavage technique was used to determine the energy required to propagate a crack on the basal plane (0001) in single crystals. Tensile fracture data from single and asymmetric bicrystals were used to calculate the energy needed to initiate a cleavage crack on the (0001) plane.

Kamdar, M. H.↗
NASA NTRS1977

Friction and deformation behavior of single-crystal silicon carbide

Friction and deformation studies were conducted with single-crystal silicon carbide in sliding contact with diamond. When the radius of curvature of the spherical diamond rider was large (0.3), deformation of silicon carbide was primarily elastic. Under these conditions the friction coefficient was low and did not show a dependence on the silicon carbide orientation. Further, there was no detectable cracking of the silicon carbide surfaces. When smaller radii of curvature of the spherical diamond riders (0.15 and 0.02 mm) or a conical diamond rider was used, plastic grooving occured and the silicon carbide exhibited anisotropic friction and deformation behavior. Under these conditions the friction coefficient depended on load. Anisotropic friction and deformation of the basal plane of silicon carbide was controlled by the slip system. 10101120and cleavage of1010.

Miyoshi, K.↗
NASA NTRS1978

Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

Miyoshi, K.↗
NASA NTRS1978

Wear of single-crystal silicon carbide in contact with various metals in vacuum

Sliding friction experiments were conducted in vacuum with single crystal silicon carbide (0001) surface in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. The hexagon shaped cracking and fracturing of silicon carbide that occurred is believed to be due to cleavages of both the prismatic and basal planes. The silicon carbide wear debris, which was produced by brittle fracture, slides or rolls on both the metal and silicon carbide and produces grooves and indentations on these surfaces. The wear scars of aluminum and titanium, which have much stronger chemical affinity for silicon and carbon, are generally rougher than those of the other metals. Fracturing and cracking along the grain boundary of rhodium and tungsten were observed. These may be primarily due to the greater shear moduli of the metals.

Miyoshi, K.↗
NASA NTRS1977

Friction, deformation and fracture of single-crystal silicon carbide

An investigation was conducted to determine the nature of the deformation and fracture of silicon carbide and its effects on friction properties. Friction experiments were conducted with hemispherical and conical diamond riders sliding on the basal plane of silicon carbide. The results indicate that, when deformation is primarily elastic, the friction does not depend on crystallographic orientation and there is no detectable fracture or cracking. When, however, plastic deformation occurs, silicon carbide exhibits anisotropic friction and deformation behavior. Surface fracture crack patterns surrounding wear tracks are observed to be of three types. The crack-geometries of two types are generally independent of orientation, the third crack, however, depends on the orientation. All surface cracks extend into subsurface.

Miyoshi, K.↗
NASA NTRS1978

Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal-transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon-shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

Miyoshi, K.↗
NASA NTRS1979

Friction and fracture of single-crystal silicon carbide in contact with itself and titanium

An investigation was conducted to examine the friction properties and mechanical behavior of single-crystal silicon carbide (0001) surface sliding against itself and against polycrystalline titanium. The results indicate hexagon-shaped pits of silicon carbide and the formation of platelet hexagon-shaped wear debris of silicon carbide due to cleavages of both prismatic and basal planes as a result of silicon carbide sliding against itself. The fracturing of silicon carbide also occurs near the adhesive bond to titanium. The wear debris produced by brittle fracture plows the titanium and transfers to it. Further, the silicon carbide wear debris, which adhered and transferred to titanium, plows the silicon carbide surface and transfers back to it

Miyoshi, K.↗
NASA NTRS1981

Anisotropic tribological properties of silicon carbide

The effects of crystallographic orientation on the tribological properties of single-crystal silicon carbide surfaces in contact with various solids are investigated for adhesive and abrasive wear processes. In the adhesive wear process, the adhesion and wear of silicon carbide is found to be markedly dependent on crystallographic orientation. The force resisting shearing fracture of the adhesive bonds at the interface is lower in preferred crystallographic direction of slip. In the abrasive wear process, the 1 0 -1 0 direction on the basal plane of silicon carbide exhibits the lowest coefficient of friction and the greatest resistance to abrasion.

Miyoshi, K.↗
NASA NTRS1982

An experimental study of the ice column habit transitions

The influence of supersaturation on column growth of ice crystals forming from atmospheric water vapor was investigated. A high density of crystals was generated on a glass fiber cooled by liquid N2 in a thermal diffusion chamber. Attention was focused on a neighbor-free hollow prism during a stepwise decrease in supersaturation while the crystal temperature was maintained constant. Another experiment involved epitaxial growth of ice crystals on CuS, where nonthickening crystals could only be grown below -7 C. A critical supersaturation was found to be necessary for growth of the basal plane. Beyound the critical value, surface kinetics do not control the growth rate, which is then dominated by the penetration of water molecules through the diffusion field surrounding the crystal.

Cho, N.↗
NASA NTRS1985

Constitutive Modeling of Superalloy Single Crystals and Directionally Solidified Materials

A unified viscoplastic constitutive relation based on crystallographic slip theory was developed for the deformation analysis of nickel base face centered cubic superalloy single crystals at elevated temperature. The single crystal theory is embedded in a self consistent method to derive a constitutive relation for a directionally solidified material comprised of a polycrystalline aggregate of columnar cylindrical grains. One of the crystallographic axes of the cylindrical crystals points in the columnar direction while the remaining crystallographic axes are oriented at random in the basal plane perpendicular to the columnar direction. These constitutive formulations are coded in FORTRAN for use in nonlinear finite element and boundary element programs.

Walker, K. P.↗
NASA NTRS1985

Induced orientational behavior of liquid crystal polymer by carbon fibers

Experimental results are presented that show that the structure of carbon fibers induces molecular orientation of liquid crystal polymers. X-ray diffraction data are used to demonstrate final collinearity of the polymer molecular axis and carbon fiber axis independent of fabrication approaches or prefabrication orientation of the polymer relative to the carbon fiber direction. The final degree of polymer molecular orientation approximately equals the degree of carbon basal plane orientation within the carbon fiber.

Chung, T. S.↗
NASA NTRS1987

Electron-spin-resonance studies of vapor-grown carbon fibers

The effects of annealing temperature and fiber diameter on the degree of disorder of vapor-grown carbon fibers were investigated by analyzing the electron-spin-resonance (ESR) line shapes of fibers annealed at six various temperatures up to 3375 K. The diameter of fibers, grown from methane gas, ranged from 10 to 140 microns with most fibers between 20 and 50 microns. It was found that the degree of disorder of vapor-grown fibers decreases upon annealing to higher temperature; standard angular deviation between the fiber axis and the crystallite basal planes could vary from 35 deg (for annealing temperature of 2275 K) to 12 deg (for 3375 K). With respect to fiber diameter, order parameters were found to be higher for fibers of smaller diameters.

Marshik, B.↗
NASA NTRS1987

Analytical electron microscopy of extraterrestrial materials - Results from microtome sections of carbonaceous chondrites and interplanetary dust particles

The paper describes a method for embedding, sectioning, and observing two types of extraterrestrial materials, including hydrated interplanetary dust particles (IDPs) and carbonaceous chondrite meteorites. The technique, which produces large thin areas suitable for both high-resolution imaging and thin-film microanalysis, was applied to study the petrology of the IDP Ames-DE C86-11, the Murchison carbonaceous chondrite matrix, and the Allende dark inclusion. The technique makes it possible to maintain delicate interfaces, boundaries, and phase relationships between grains. Because phases are held in place, layer lattice silicates and other minerals with strong preferred orientations can be viewed in any orientation, including the orientation normal to their basal planes.

Blake, D. F.↗