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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

NaGaS 2 - an Elusive Layered Compound with Dynamic Water Absorption and Wide-Ranging Ion Exchange Properties

Most ternary sulfides belonging to the MGaS 2 structure-type have been known for many years and are well-characterized. Surprisingly, there have been no reports of the NaGaS 2 composition, which contains Na, a monovalent cation slightly larger in size than Li, found in LiGaS 2 , a compound known for its non-linear optical properties. Herein we demonstrate for the first time that the unique reversible water absorption in NaGaS 2 has resulted in its absence from the literature due to the difficulties that one encounters when characterizing this compound by SC XRD. The layered structure of this compound coupled with uniquely easy migration of water molecules between the layers allows for ion exchange with 3d and 5f metal cations. We established that some cations, e.g. Ni 2+ , facilitate exfoliation of the layers, providing a facile synthetic route to a new class of 2D chalcogenide materials and, in addition, demonstrating that NaGaS 2 can readily uptake uranyl species from aqueous solutions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Construction of MoS 2 /NiS 2 heterostructure with fast interfacial reaction kinetics for ultrafast sodium storage

Constructing heterostructure is a valid method to reinforcing sodium storage performance of transition metal chalcogenides materials. Herein, a simple, safe and controllable one step hydrothermal method is proposed to synthesize MoS 2 /NiS 2 heterostructure. Due to the difference in band gaps and work functions of MoS 2 and NiS 2 , the charges are redistributed at the MoS 2 /NiS 2 heterointerfaces, thereby accelerating the migration of electrons and Na + . The heterointerfaces provide extra active sites for storing Na + , thus increasing the sodium storage capacity of the heterostructure. Furthermore, the distinct redox potentials of NiS 2 and MoS 2 promote the structural stability of MoS 2 /NiS 2 heterostructure during the electrochemical reaction processes. Consequently, the obtained MoS 2 /NiS 2 heterostructure exhibits superior rate properties (339.4 mAh g –1 at 10 A g –1 ) and ultra-stable cycling stability (480.5 mAh g –1 after 350 cycles at 1 A g –1 ). Finally, this paper presents a valid strategy for creating heterostructure anodes with excellent sodium storage properties.

25 ENERGY STORAGE↗
DOE OSTI2021

Lithium thiostannate spinels: air-stable cubic semiconductors.

Lithium chalcogenide materials have been studied less than other alkali metal analogs and are of interest as ion conductors and semiconductors capable of thermal neutron detection. Herein, we describe the structural, thermal, magnetic, electronic, and ionic properties of a new family of cubic lithium thiospinels Li2MSn3S8 (M = Mg, Fe, Mn, Ni, Co) and Li1.66CuSn3.33S8. All compounds crystallize in the Fd (3) over barm space group and exhibit site occupancy disorder with Sn and M on the octahedral site for M = Mg, Fe, Mn, Ni, Co. The Li1.66CuSn3.33S8 compound also exhibits occupancy disorder on the tetrahedral sites between Li and Cu, as well as on the octahedral sites between Li and Sn. We demonstrate the ability to tune the physical properties of the compounds by changing their composition. By tuning the identity of the transition metal in the structure, the optical band gaps can vary between 0.91(2) and 2.19(2) eV, and electrical resistivities between 2.8 x 10(3) Omega-cm and 2.2 x 10(7)Omega-cm can be achieved. Density functional theory calculations for Li2MgSn3S8 and Li1.66CuSn3.33S8 suggest that both materials have indirect band gaps and significantly dispersive conduction bands. A bandwidth dispersion of 0.75 and 0.70 eV along the Gamma -> M direction in the conduction band are predicted for Li2MgSn3S8 and Li1.66CuSn3.33S8, respectively, with an electron effective mass of 0.49 and 0.55 m(e) at the Gamma point. The hole effective mass in the valence band is calculated to be 1.25 me at the M point and 0.75 me at the L point for Li2MgSn3S8 and Li1.66CuSn3.33S8, respectively. The ionic/electronic conductivity of each compound was determined using AC electrochemical impedance spectroscopy.

Quintero, Michael A.↗
DOE OSTI2021

Structural, Optical, and Electronic Properties of Two Quaternary Chalcogenide Semiconductors: Ag 2 SrSiS 4 and Ag 2 SrGeS 4

Quaternary chalcogenide materials have long been a source of semiconductors for optoelectronic applications. Recent studies on the I2-II-IV-X4 (I = Ag, Cu, Li; II = Ba, Sr, Eu, Pb; IV = Si, Ge, Sn; X = S, Se) materials have shown particular versatility and promise among these compounds. These semiconductors take advantage of a diverse bonding scheme and chemical differences among cations to target a degree of anti-site defect resistance. Within this set of compounds, the materials containing both Ag and Sr have not been experimentally studied and leave a gap in the full understanding of the family. Here, we have synthesized powders and single crystals of two Ag- and Sr-containing compounds, Ag 2 SrSiS 4 and Ag 2 SrGeS 4 , each found to form in the tetragonal I4¯2m structure of Ag 2 BaGeS 4 . During the synthesis targeting the title compounds, two additional materials, Ag 2 Sr 3 Si 2 S 8 and Ag 2 Sr 3 Ge 2 S 8 , have also been identified. Furthermore, these cubic compounds represent impurity phases during the synthesis of Ag 2 SrSiS 4 and Ag 2 SrGeS 4 . We show through hybrid density functional theory calculations that Ag 2 SrSiS 4 and Ag 2 SrGeS 4 have highly dispersive band edge states and indirect band gaps, experimentally measured as 2.08(1) and 1.73(2) eV, respectively. Second-harmonic generation measurements on Ag 2 SrSiS 4 and Ag 2 SrGeS 4 powders show frequency doubling capabilities in the near-infrared range.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Liquid state properties and solidification features of the pseudo binary BaS-La 2 S 3

The high temperature thermodynamic properties of chalcogenides materials based on BaS remain elusive. Herein the pseudo binary BaS-La 2 S 3 is investigated above 1573 K. The liquid properties of BaS-La 2 S 3 are measured by means of high resolution in-situ visualization coupled with thermal arrest measurements in a thermal imaging furnace. This enables to report the first observation of such melts in a container-less setting. The melting points of BaS and La 2 S 3 are revisited at 2454 K and 2004 K respectively. La 2 S 3 demonstrates a high stability in its liquid state, in strike difference with the sublimation observed for BaS. BaS is however partially stabilized with the addition of few percents of La 2 S 3 . The remarkable chemical and thermal stability of La 2 S 3 -rich samples contrasts with the partial decomposition and high vapor pressure observed for BaS-rich samples. Observations and analysis of the solidified samples suggest three different solid solutions. Solid and liquid densities are investigated along the different compositions, supporting a first estimate of the volumetric thermal expansion coefficient for La 2 S 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

MoS 2 for beyond lithium-ion batteries

As a typical transition-metal chalcogenide material, molybdenum disulfide (MoS 2 ) has received tremendous attention because of its unique layered structure and versatile chemical, electronic, and optical properties. With the focus of this Perspective on the energy storage area, one of the most important contributions of MoS 2 is that it sparked the birth of the rechargeable lithium battery in the early 1980s, which later formed the foundation of commercial lithium batteries. After four decades, admitting that MoS 2 is still playing a significant role in the lithium-ion battery field and considerable effort was made to decipher the mechanism through ex situ and in situ studies and by means of MoS 2 nanostructure engineering that advances the lithium battery performance, it is also used in beyond lithium-ion batteries, such as sodium, magnesium, calcium, and aluminum energy storage systems. Such alternative battery systems are desirable because of the safety concerns of lithium and the depletion of lithium reserves and corresponding increase in cost. In this Perspective, recent development on the fabrication of novel MoS 2 nanostructures was discussed, followed by the scrutinization of their application in beyond lithium-ion batteries and the in situ/operando methods involved in these studies. Finally, a brief summary and outlook that may help with the future advancement of the beyond lithium-ion batteries are presented.

25 ENERGY STORAGE↗
DOE OSTI2024

Buffer-layer-controlled nickeline vs zinc-blende/wurtzite-type MnTe growths on c -plane Al 2 O 3 substrates

In the recent past, MnTe has proven to be a crucial component of the intrinsic magnetic topological insulator (IMTI) family [MnTe] m [Bi2Te 3 ] n , which hosts a wide range of magneto-topological properties depending on the choice of m and n. However, bulk crystal growth allows only a few combinations of m and n for these IMTIs due to the strict limitations of the thermodynamic growth conditions. One way to overcome this challenge is to utilize atomic layer-by-layer molecular beam epitaxy (MBE) technique, which allows arbitrary sequences of [MnTe]m and [Bi 2 Te 3 ] n to be formed beyond the thermodynamic limit. For such MBE growth, finding optimal growth templates and conditions for the parent building block, MnTe, is a key requirement. Here, we report that two different hexagonal phases of MnTe - nickeline (NC) and zinc-blende/wurtzite (ZB-WZ) structures, with distinct in-plane lattice constants of 4.20 ± 0.04 Å and 4.39 ± 0.04 Å, respectively - can be selectively grown on c-plane Al 2 O 3 substrates using different buffer layers and growth temperatures. Moreover, we provide the first comparative studies of different MnTe phases using atomic-resolution scanning transmission electron microscopy and show that ZB and WZ-like stacking sequences can easily alternate between the two. Surprisingly, In 2 Se 3 buffer layer, despite its lattice constant (4.02 Å) being closer to that of the NC phase, fosters the ZB-WZ instead, whereas Bi 2 Te 3 , sharing the same lattice constant (4.39 Å) with the ZB-WZ phase, fosters the NC phase. Furthermore, these discoveries suggest that lattice matching is not always the most critical factor determining the preferred phase during epitaxial growth. Overall, this will deepen our understanding of epitaxial growth modes for chalcogenide materials and accelerate progress toward new IMTI phases as well as other magneto-topological applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electro-refractive modulation in photonic structures

Methods, systems, and devices are described for electro-optic tuning. An example device may comprise a first layer comprising a transition metal di-chalcogenide material, a second layer comprising a conductive material, and a third layer comprising a dielectric material. The third layer may be disposed at least partially between the first layer and the second layer. An electrical potential difference applied between the first layer and the second layer may cause a tunable refractive index change in the first layer.

Lipson, Michal↗
DOE OSTI2020

Metal chalcogenide synthesis method and applications

A method for synthesizing a metal chalcogenide nanocrystal (NC) material includes reacting a metal material and an ammonium chalcogenide material in an organic solvent material. The method provides that the metal chalcogenide nanocrystal material may be synthesized by a heating-up method at large scale (i.e., greater than 30 grams). Ammonium chalcogenide salts exhibit high reactivity and metal chalcogenide nanocrystals can be synthesized at low temperatures (i.e., less than 200° C.) with high conversion yields (i.e., greater than 90 percent).

36 MATERIALS SCIENCE↗
DOE OSTI2024

Breaking Barriers in Chalcogenide Perovskite Synthesis: A Generalized Framework for Fabrication of BaMS 3 (M═Ti, Zr, Hf) Materials

Abstract Chalcogenide perovskites have garnered increasing attention as stable, non‐toxic alternatives to lead halide perovskites. However, their conventional synthesis at high temperatures (>1000 °C) has hindered widespread adoption. Recent studies have developed low‐to‐moderate temperature synthesis methods (<600 °C) using reactive precursors, yet a comprehensive understanding of the pivotal factors affecting reproducibility and repeatability remains elusive. This study delineates the critical factors in the low‐temperature synthesis of BaMS 3 (M═Zr, Hf, Ti) compounds and presents a generalized framework. Innovative approaches are developed for synthesizing BaMS 3 compounds using this framework involving organometallics for solution deposition. The molecular precursor routes, employing metal acetylacetonates to generate soluble metal–sulfur bonded complexes and metal–organic compounds to produce soluble metal‐thiolate, metal‐isothiocyanate, and metal‐trithiocarbonate species, are demonstrated to yield carbon‐free BaMS 3 . These methods have achieved the most contiguous films of BaZrS 3 and BaHfS 3 using solution deposition to date. Furthermore, a hybrid solution processing method involving stacking sputter‐deposited Zr and solution‐deposited BaS layers is employed to synthesize a contiguous, oxygen‐free BaZrS 3 film. The diffuse reflectance measurements indicate a direct bandgap of ≈ 1.85 eV for the BaZrS 3 films and ≈ 2.1 eV for the BaHfS 3 film under investigation.

25 ENERGY STORAGE↗
DOE OSTI2023

Tailoring Mid–Gap States of Chalcogenide Glass by Pressure–Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials

Phase change memory (PCM) and ovonic threshold switching (OTS) materials using chalcogenide glass are essential elements in advanced 3D memory chips. The mid–gap states, induced by the disorder and defects in the glass, are the physical mechanisms of the electrical switching behavior, while the origin of these trap states is still under debate and the medium–range clusters that break the global octet rule, such as over–coordinated atoms, are known to be responsible in various glass. Here, it is discovered that a large fraction of over–coordinated clusters fails to generate mid–gap states, which are probably caused by hypervalent bonding, a multi–centered covalent bond participated by delocalized lone–pair electrons. This is confirmed by the pressure–driven simulations of amorphous GeSe models, in which it is found that octahedral motifs and hypervalent bonds prevent the over–coordinated medium–range clusters from providing excessive electrons. In practical applications, compatible dopants can be used to change the number of hypervalent bonds, thus controlling the number of mid–gap states and consequently the performance of PCM and OTS materials. Finally, these results reveal the origin of mid–gap states in chalcogenide glasses, enabling extensive control in the development of pioneering electrical switching materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Chalcogenide phase-change material advances programmable terahertz metamaterials: a non-volatile perspective for reconfigurable intelligent surfaces

Terahertz (THz) waves have gained considerable attention in the rising 6G communication due to their large bandwidth. However, the cost and power consumption become the major constraints for the commercialization of 6G THz systems as the frequency increases. Reconfigurable intelligent surface (RIS) comprising active metasurfaces and digital controllers has been proposed for beamforming in the 6G multiple-input-multiple-output systems, showing good potential to suppress the system size, weight, and power consumption (SWaP). Currently, their controlling diodes can hardly work up to THz frequencies. Therefore, several active stimuli have been investigated as alternatives. Among them, chalcogenide phase-change material Ge 2 Sb 2 Te 5 (GST) addresses large modulation depth, picosecond switching speed, and non-volatile properties. Notably, the non-volatile GST may enable RIS systems with memory and low control power. This work briefly reviews the advances of GST-tuned THz metamaterials (MTMs), discusses the current obstacles to overcome, and gives a perspective of GST applications in the rising 6G communications.

6G↗
DOE OSTI2021

Metal Chalcogenides for Neuromorphic Computing: Emerging Materials and Mechanisms

The approaching end of Moore's Law scaling has significantly accelerated multiple fields of research including neuromorphic-, quantum-, and photonic computing, each of which possesses unique benefits unobtained through conventional binary computers. One of the most compelling arguments for neuromorphic computing systems is power consumption, noting that computations made in the human brain are approximately 106 times more efficient than conventional CMOS logic. This review article focuses on the materials science and physical mechanisms found in metal chalcogenides that are currently being explored for use in neuromorphic applications. We begin by reviewing the key biological signal generation and transduction mechanisms within neuronal components of mammalian brains and subsequently compare with observed experimental measurements in chalcogenides. With robustness and energy efficiency in mind, we will focus on short-range mechanisms such as structural phase changes and correlated electron systems that can be driven by low-energy stimuli, such as temperature or electric field. We aim to highlight fundamental materials research and existing gaps that need to be overcome to enable further integration or advancement of metal chalcogenides for neuromorphic systems.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Embracing disorder in quantum materials design

Many of the most exciting materials discoveries in fundamental condensed matter physics are made in systems hosting some degree of intrinsic disorder. While disorder has historically been regarded as something to be avoided in materials design, it is often of central importance to correlated and quantum materials. This is largely driven by the conceptual and theoretical ease to handle, predict, and understand highly uniform systems that exhibit complex interactions, symmetries, and band structures. In this Perspective, we highlight how flipping this paradigm has enabled exciting possibilities in the emerging field of high entropy materials, focusing primarily on high entropy oxide and chalcogenide quantum materials. These materials host high levels of cation or anion compositional disorder while maintaining unexpectedly uniform single crystal lattices. The diversity of atomic scale interactions of spin, charge, orbital, and lattice degrees of freedom are found to emerge into coherent properties on much larger length scales. Thus, altering the variance and magnitudes of the atomic scale properties through elemental selection can open new routes to tune global correlated phases, such as magnetism, metal–insulator transitions, ferroelectricity, and even emergent topological responses. The strategy of embracing disorder in this way provides a much broader pallet from which functional states can be designed for next-generation microelectronic and quantum information systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Embracing Disorder in Quantum Materials Design

Many of the most exciting materials discoveries in fundamental condensed matter physics are made in systems hosting some degree of intrinsic disorder. While disorder has historically been regarded as something to be avoided in materials design, it is often of central importance to correlated and quantum materials. This is largely driven by the conceptual and theoretical ease to handle, predict, and understand highly uniform systems that exhibit complex interactions, symmetries, and band structures. In this Perspective, we highlight how flipping this paradigm has enabled exciting possibilities in the emerging field of high entropy materials, focusing primarily on high entropy oxide and chalcogenide quantum materials. These materials host high levels of cation or anion compositional disorder while maintaining unexpectedly uniform single crystal lattices. The diversity of atomic scale interactions of spin, charge, orbital, and lattice degrees of freedom are found to emerge into coherent properties on much larger length scales. Thus, altering the variance and magnitudes of the atomic scale properties through elemental selection can open new routes to tune global correlated phases, such as magnetism, metal–insulator transitions, ferroelectricity, and even emergent topological responses. The strategy of embracing disorder in this way provides a much broader pallet from which functional states can be designed for next-generation microelectronic and quantum information systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1995

Preparation of Thermoelectric Materials From Melts

A review of melt preparation techniques is presented covering necessary phase relationships, synthesis/alloying and crystal growth of thermoelectric materials. The processes described require the knowledge of composition-temperature or composition- temperature-pressure phase diagrams. This knowledge enables the selection of the appropriate method of preparation, apparatus design and processing. The materials, from a technological point of view, will be roughly divided into three categories: low temperature materials (group V chalcogenides based on Bi2Te3), middle temperature materials (group IV chalcogenides based on PbTe) and high temperature materials (Si-Ge solid solutions). All known methods of preparation from melts are described, and a comparative analysis is given. (complete abstract)

thermoelectrics↗
DOE OSTI2024

Artificial-Intelligence Aided Design and Synthesis of Novel Layered 2D Multi-Principal Element Materials for Energy Storage (Final Report)

This DOE-EPSCoR project aimed to predict, synthesize, and characterize novel layered two-dimensional (2D) high-entropy materials (HEMs). These 2D-HEMs, composed of multiple principal elements in nearly equal concentrations, are distinct from traditional 2D materials (typically containing two or three elements) and conventional alloys (dominated by a single primary element with minor secondary additions). Their unique structural and compositional features enable significant lattice strain accommodation, resulting in enhanced electrode performance and potential applications in catalysis, hydrogen storage, sensing, quantum information technologies, and flexible electronics. The research focused on addressing four fundamental questions: (i) What combinations of elements can form stable and synthesizable 2D-HEMs? (ii) What mechanisms drive the stability and synthesizability of crystalline single-phase 2D-HEMs? (iii) How do local chemical disorder and defects influence the macroscopic electronic and mechanical properties? and (iv) What charge storage mechanisms are active in selectively synthesized 2D-HEMs for battery and supercapacitor electrode applications? To achieve these goals, the project employed an integrated theory-experiment approach, incorporating high-throughput first-principles calculations, theoretical modeling, data mining, experimental synthesis, and advanced characterization techniques. The advanced computing resources and state-of-the-art experimental characterization facilities at Oak Ridge National Laboratory (ORNL) were leveraged through collaboration. Beyond scientific advancements, the project contributed to workforce development. Two postdoctoral researchers and three graduate students at the University of Maine were trained through co-advising by ORNL scientists and collaborative interactions, strengthening their expertise in cutting-edge materials science.

36 MATERIALS SCIENCE↗