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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Surface-Defect-Passivation-Enabled Near-Unity Charge Collection Efficiency in Bromide-Based Perovskite Gamma-Ray Spectrum Devices

Hybrid lead halide perovskites have superior charge transport properties to all-inorganic perovskites, but high-resolution spectroscopic radiation detectors have not been realized. Here we show that surface deep traps severely limit charge collection in formamidinium lead bromide (FAPbBr3) single-crystal devices, despite having a good bulk transport property. Three types of defect on the crystal surface, namely, FA vacancies, uncoordinated lead and Pb-Pb dimers caused by bromide loss, are found to form deep traps, resulting in non-radiative charge recombinations at the metal/perovskite interface. By tailoring the passivation functional groups, we find that ammonium bromide can passivate all these three deep traps on FAPbBr3 surfaces, improving the charge collection efficiency to near unity. The comparable bulk and surface recombination lifetimes indicate that all the surface defects are effectively passivated. Surface passivation also reduces the dark current by 10 times and decreases the dark counts by ~60 times. The energy resolution of the 137Cs spectra acquired using the FAPbBr3 detectors is improved from 5.7% to 1.7% when all the surface defects are passivated without changing the bulk properties, which is the best among solution-grown semiconductor detectors. Surface passivation is stable for more than six months, and FAPbBr3 spectroscopic detectors can operate at unprecedented high temperatures of more than 130 degrees C.

gamma ray↗
DOE OSTI2026

DOE EV Data Collection - Charging Data

Charging data are collected from one of three sources, each with varying levels of additional information. These sources, in approximate order from most to least additional information, are: • The electric vehicle supply equipment (charger) • Onboard the vehicle itself • From a utility submeter. Many chargers provide software that allows for the collection and reporting of charging session data. If unavailable, data may be recorded by the charging vehicle’s onboard systems. If neither of these options is available, data can be acquired from utility submeters that simply track the energy flowing to one or more chargers. Data collected directly from the electric vehicle supply equipment (EVSE) are typically the most accurate and highest frequency. However, it is not always possible to discern which exact vehicle is being charged during any one session. EVSE-side data can be identified where a single charger ID but a range of vehicle IDs are present (e.g., CH001, EV001-EV005). Data collected from the vehicle’s onboard systems usually does not provide information on which exact charger is being used. Vehicle-side data can be identified where a single Vehicle ID but a range of Charger IDs are present (e.g., EV001, CH001-CH005). Data collected from utility submeters provide no information on which specific vehicle is charging or which specific charger is in use. Submeter data can be identified where multiple Vehicle IDs and multiple Charger IDs are present, but only a single Fleet ID is present (e.g., EV001-EV005, CH001-CH005, Fleet01). The **Charge Data Daily/Session Dictionaries** contains definitions for each available parameter collected as part of an individual charging session, aggregated at either a daily or session level. The parameters available will vary between vehicles and chargers. The **Charger Attributes** table contains specific charger characteristics, coded to at least one anonymous Charger ID and linked to either a single or a range of Vehicle IDs. Vehicle ID can be used as a key between charging data and vehicle attribute tables. The **Charger Attributes Data Dictionary** contains definitions for each available parameter collected on the physical and operational characteristics of the charging hardware itself. The **Vehicle Attributes Data Dictionary** contains definitions for each available parameter associated with a vehicle’s physical and functional attributes and fleet context. The **Vehicle Attributes** table contains specific vehicle characteristics, coded to an anonymous Vehicle ID. This Vehicle ID can be used as a key between vehicle data and vehicle attribute tables, and in cases where charging data are supplied, links a vehicle with the charger(s) that supplied it power. The **Charging Data** tables contain the data from each charger’s operations, coded to at least one anonymous Charger ID and linked to either a single or a range of Vehicle IDs. Vehicle ID can be used as a key between charging data and vehicle attribute tables. Data is being uploaded quarterly through 2023 and subject to change until the conclusion of the project.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1985

CCD charge collection efficiency and the photon transfer technique

The charge-coupled device (CCD) has shown unprecendented performance as a photon detector in the areas of spectral response, charge transfer, and readout noise. Recent experience indicates, however, that the full potential for the CCD's charge collection efficiency (CCE) lies well beyond that which is realized in currently available devices. A definition of CCE performance is presented and a standard test tool (the photon transfer technique) for measuring and optimizing this important CCD parameter is introduced. CCE characteristics for different types of CCDs are compared; the primary limitations in achieving high CCE performance are discussed, and the prospects for future improvement are outlined.

Janesick, J.↗
DOE OSTI2021

Charge collection in h -BN neutron detectors at elevated temperatures

Many of the neutron detector applications are in the environments with harsh conditions such as high temperatures. We report here the measurements of charge collection parameters of hexagonal boron nitride (h-BN) detectors at elevated temperatures, including the electron mobility-lifetime product (μτ) and surface recombination field (s/μ). It was found that μτ is increased, while s/μ is decreased as temperature increases. The temperature dependence of the surface recombination field (s/μ) revealed that electrons trapped in the surface states tend to thermally activate to the bulk region at higher temperatures with an activation energy of about 0.22 eV, leading to a reduction in the density of the charged surface states at elevated temperatures. Consequently, the charge collection efficiency is enhanced at elevated temperatures due to a reduced surface recombination field and increased electron mobility-lifetime product. The results suggested that h-BN neutron detectors are favorable for high temperature operation.

47 OTHER INSTRUMENTATION↗
NASA NTRS1985

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funneling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Zoutendyk, J. A.↗
NASA NTRS1987

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funnelling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Zoutendyk, John A.↗
NASA NTRS1983

The physics of a single-event upset in integrated circuits: A review and critique of analytical models for charge collection

When an energetic particle (kinetic energy 0.5 MeV) originating from a radioactive decay or a cosmic ray transverse the active regions of semiconductor devices used in integrated circuit (IC) chips, it leaves along its track a high density electron hole plasma. The subsequent decay of this plasma by drift and diffusion leads to charge collection at the electrodes large enough in most cases to engender a false reading, hence the name single-event upset (SEU). The problem of SEU's is particularly severe within the harsh environment of Jupiter's radiation belts and constitutes therefore a matter of concern for the Galileo mission. The physics of an SEU event is analyzed in some detail. Owing to the predominance of nonlinear space charge effects and the fact that positive (holes) and negative (electrons) charges must be treated on an equal footing, analytical models for the ionized-charge collection and their corresponding currents as a function of time prove to be inadequate even in the simplest case of uniformly doped, abrupt p-n junctions in a one-dimensional geometry. The necessity for full-fledged computer simulation of the pertinent equations governing the electron-hole plasma therefore becomes imperative.

Vonroos, O.↗
NASA NTRS1991

Theoretical prediction of the impact of Auger recombination on charge collection from an ion track

A recombination mechanism that significantly reduces charge collection from very dense ion tracks in silicon devices was postulated by Zoutendyk et al. The theoretical analysis presented here concludes that Auger recombination is such a mechanism and is of marginal importance for higher density tracks produced by 270-MeV krypton, but of major importance for higher density tracks. The analysis shows that recombination loss is profoundly affected by track diffusion. As the track diffuses, the density and recombination rate decrease so fast that the linear density (number of electron-hole pairs per unit length) approaches a non-zero limiting value as t yields infinity. Furthermore, the linear density is very nearly equal to this limiting value in a few picoseconds or less. When Auger recombination accompanies charge transport processes that have much longer time scales, it can be simulated by assigning a reduced linear energy transfer to the ion.

Edmonds, Larry D.↗
DOE OSTI2023

Unraveling Fano noise and the partial-charge-collection effect in x-ray spectra below 1 keV

Fano noise, readout noise, and the partial-charge-collection (PCC) effect collectively contribute to the degradation of energy spectra in charge-coupled device (CCD) measurements, especially at low energies. Here, in this work, the x rays produced by the fluorescence of fluorine (677 eV) and aluminum (1486 eV) were recorded using a Skipper-CCD, which enabled the readout noise to be reduced to 0.2 e - . Based on an analytical description of photopeak shapes resulting from the convolution of the PCC effect and Fano noise, we achieved a precise characterization of the energy spectra. This description enabled us to disentangle and quantify the contributions from both Fano noise and the PCC effect. As a result, we determined the Fano factor and the electron-hole pair creation energy. Additionally, we estimated the PCC region of the sensor and, for the first time, experimentally observed the expected skewness of photopeaks at low energies.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1991

Theoretical prediction of the impact of Auger recombination on charge collection from an ion track

The theoretical analysis presented indicates that Auger recombination can reduce charge collection from very dense ion tracks in silicon devices. It is of marginal importance for tracks produced by 270-MeV krypton, and therefore it is of major importance for ions exhibiting a significantly larger loss. The analysis shows that recombination loss is profoundly affected by track diffusion. As the track diffuses, the density and recombination rate decrease so fast that the linear density (number of electron-hole pairs per unit length) approaches a nonzero limiting value as t approaches infinity. Furthermore, the linear density is very nearly equal to this limiting value in a few picoseconds or less. When Auger recombination accompanies charge transport processes that have much longer time scales, it can be simulated by assigning a reduced linear energy transfer to the ion.

Edmonds, Larry D.↗
NASA NTRS2003

Proton-Induced Transients and Charge Collection Mechanisms in a LWlR HgCdTe Focal Plane Array

Low noise performance of IR detectors is required, even in the presence of charged particles. Galactic cosmic rays, trapped protons & solar energetic particles. Particle induced transients identified as an important source of noise on ESA's ISO satellite. Also observed on NICMOS Instrument on NASA% Hubble Space Telescope. Tools to analyse particle induced transients have been developed. To date, comparisons of model have been made to flight data for a HgCdTe array exposed to trapped protons, and to a Si array exposed to laboratory protons. We report ground based proton transient measurements in a modem LWlR HgCdTe array operating under cryogenic conditions. Demonstration of charge collection mechanisms. Provide benchmarks for modeling tools.

Marshall, Paul↗
NASA NTRS1987

Diffusion length measurements in bulk and epitaxially grown 3-5 semiconductors using charge collection microscopy

Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic techniques used was charge collection microscopy also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended generation and point generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations, or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

Leon, R. P.↗
NASA NTRS1987

Diffusion length measurement in bulk and epitaxially grown III-V semiconductors using charge collection microscopy

Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic technique used was charge collection microscopy, also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line-scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended-generation and point-generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

Leon, R. P.↗
NASA NTRS2018

Simulation of Charge Collection to Spacecraft Surfaces: Freja Satellite

As spacecraft travel through plasma, spacecraft surfaces become charged by the collection of charged particles. This process is referred to as Surface Charging. These charges can be detrimental to the vehicle's electronic subsystems as they present a threat of electrostatic discharge (ESD) to onboard circuitry. The process of Surface Charging is complex and is affected by many elements. The charging of each surface is unique. The potential of an individual surface is dependent upon many variables including but not limited to the surface's geometry, material and its location. Each surface also has unique interactions with the surrounding plasma. Other factors that play large roles in the charging process is the density and temperature of plasma ions and electrons. Using Nascap-2k, a model of the Freja satellite has been constructed, and its auroral plasma environment has been imitated to simulate surface charging characteristics. The charging process of the Freja satellite has been modeled iteratively with incremental changes in both the Maxwellian electron temperature (eV) as well as the Gaussian electron energy (eV). This study provides an analysis of the sensitivity between spacecraft surface charging and these two primary variables of electron differential flux.

Wolfley, Olivia H.↗
NASA NTRS2018

Simulation of Charge Collection to Spacecraft Surfaces: Freja Satellite

As spacecraft travel through space plasma, spacecraft surfaces become charged by the collection of charged particles. This process is referred to as Surface Charging. These charges can be detrimental to the vehicle's electronic subsystems as they present a threat of electrostatic discharge (ESD) to onboard circuitry. The process of Surface Charging is complex and is affected by many elements. The charging of each surface is unique. The potential of an individual surface is dependent upon many variables including but not limited to the surface's geometry, material and its location. Each surface also has unique interactions with the surrounding plasma. Other factors that play large roles in the charging process is the density and temperature of plasma ions and electrons. Using Nascap-2k, a model of the Freja satellite has been constructed, and its auroral plasma environment has been imitated to simulate surface charging characteristics. The charging process of the Freja satellite has been modeled iteratively with incremental changes in both the Maxwellian electron temperature (eV) as well as the Gaussian electron energy (eV). This study provides an analysis of the sensitivity between spacecraft surface charging and these two primary variables of electron differential flux.

Wolfley, Olivia Hope↗
NASA NTRS2008

Characterizing SRAM Single Event Upset in Terms of Single and Double Node Charge Collection

A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM s state is shown to be based upon the resistive path from the p+-sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are then predicted and compared to recent SRAM test data.

Black, J. D.↗