Non-Destructive Measurements for CMOS Devices Using Charge Collection Techniques

Johnston, A.; Swift, G.; Edmonds, L.

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NASA NTRS · 20210003766

Non-Destructive Measurements for CMOS Devices Using Charge Collection Techniques

Johnston, A.·Swift, G.·Edmonds, L.

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Abstract

Results of an experiment providing initial validation of the use of charge collection spectroscopy to measure the over-layer and epitaxial thickness and substrate diffusion length are given for several CMOIS SRAM test devices.

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Johnston, A., Swift, G., Edmonds, L.. 1996-07-15. Non-Destructive Measurements for CMOS Devices Using Charge Collection Techniques. https://ntrs.nasa.gov/citations/20210003766

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