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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Algorithms for coordinate reconstruction in position-sensitive virtual Frisch-grid detectors

Arrays of position-sensitive virtual Frisch-grid (VFG) CdZnTe (CZT) detectors provide a cost-effective solution for integrating large-area arrays for gamma-ray imaging and spectroscopy. These detectors employ high-aspect ratio CZT crystals (bars) with thicknesses up to 50 mm and cross-sections of up to 10 × 10 mm 2 . Despite the long drift distances of charge carriers in such crystals, the detectors have demonstrated excellent performance, achieving energy resolutions better than 1 % full width at half maximum (FWHM) at 662 keV and 3D position resolutions finer than 1 mm. The high spatial resolution is a critical feature of these detectors, as it enables correction of response non-uniformities caused by crystal defects, which remain present even in the highest-quality CZT material. Dislocations and dislocation walls are the primary defects responsible for variations in charge carrier losses as they drift from the interaction points toward the charge-collecting electrodes. The mechanism by which these defects affect carrier transport is generally well understood. Dislocations and sub-grain boundaries act as sinks for carrier-trapping centers, primarily impurities and secondary phases such as tellurium inclusions and precipitates. Here, these regions exhibit significantly higher carrier-trapping rates, leading to variations in the μτ-products. Because the locations of these micron-sized regions are fixed within the detector volume, fluctuations in the total collected charge arise from the random distribution of interaction sites. This results in non-uniform detector responses and degradation of energy resolution. However, by measuring the interaction-site locations with sufficient precision, charge-loss variations can be accurately corrected, allowing recovery of nearly intrinsic energy resolution.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Surface Trap Dynamics and Gamma‐Ray Detection Enhancement in Passivated FAPbBr 3 Perovskite Crystals

Perovskite‐based direct radiation detectors offer a compelling platform for room‐temperature gamma spectroscopy due to their high sensitivity, tunable optoelectronic properties, and compatibility with solution processing. While prior studies on formamidinium lead tribromide (FAPbBr 3 ) have shown that surface passivation mitigates deep trap state impact on the charge collection efficiency (CCE), the influence of surface‐based shallow traps on time‐resolved detector response remains largely unexplored. In this article, a digital signal processing (DSP) method is applied to analyze waveform rising edge dynamics in FAPbBr 3 single‐crystal detectors, identifying prompt and delayed charge collection components. Using the second derivative of the collected charge signal, the onset of shallow trap reemission is isolated, occurring 1.1 µs after carrier generation. Surface passivation suppressed deep trap states, shifting carrier occupancy toward shallower traps and extending the temporal window of delayed charge collection. This delayed contribution correlates with measurable changes in the temporal and amplitude distributions of detector events. By leveraging time‐domain filtering informed by these dynamics, a selective enhancement in signal quality and gamma peak‐to‐Compton ratio (PCR) is achieved, while preserving over 90% of photoelectric events. An improvement in the PCR to 1.80, from the original 1.09, is enabled by focusing on high collection efficiency events corresponding to reemitted carriers in the 1.1 to 3 µs range after the generation event. These results demonstrate a pathway for leveraging shallow trap dynamics to enhance spectral fidelity in time‐resolved perovskite detectors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Experimental Study of Acceptor Removal in UFSD

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Editorial: Particle interaction with afterglow plasma and non-quasi-neutral plasma

When immersed in a plasma environment, small nano-to micrometer sized solid particles undergo electrical charging by collecting charged species from the plasma. Once charged, these particles interact in peculiar ways with the surrounding plasma, triggering a widespread of interesting physical phenomena. Such systems, also known as complex or dusty plasmas, have been investigated for a few decades already.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Revealing the Nano-Scale Structure and Properties of Pinholes in SiOx Layers for POLO Contacts

In this contribution, we report on the charge collection characteristics of silicon photovoltaic devices with passivated contacts based on the c-Si/SiOx /poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiOx layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The locations where we observe preferential collection of excess carriers is very sensitive to the processing conditions used to grow and breakup the SiOx passivation layer. In some cases the apexes of the pyramids exhibit reduced EBIC signal as the valleys between adjacent pyramids show the strongest collection. Other conditions yield enhanced charge collection at well defined spots on pyramid faces with no observable collection in the valleys.

EBIC↗
DOE OSTI2023

Softening by charging: how collective modes of ionic association in concentrated redoxmer/electrolyte solutions define the structural and dynamic properties in different states of charge

Understanding the physical and chemical processes occurring in concentrated electrolyte solutions is required to achieve redox flow batteries with high energy density. Highly concentrated electrolyte solutions are often studied in which collective crowded interactions between molecules and ions become predominant. In this work, experimental and computational methods were used to examine non-aqueous electrolyte solutions in two different states of charge as a function of redoxmer concentration. As the latter increases and the ionic association strengthens, the electric conductivity passes through a maximum and the solution increasingly gels, which is seen through a rapid non-linear increase in viscosity. We establish that the structural rigidity of ionic networks is closely connected with this loss of fluidity and show that charging generally yields softer ionic assemblies with weaker attractive forces and improved dynamical properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Bias-dependent displacement damage effects in a silicon avalanche photodiode

Radiation effects studies on a commercial beveled-edge avalanche photodiode (APD) showed that applying reverse bias to the device during irradiation enhanced the severity of apparent damage. Proton microbeam irradiations were made using a proton beam energy of 2 MeV and fluence ranging from 2.0 × 10 10 to 5.1 × 10 12 cm -2 . Charge collection measurements using the ion beam induced charge (IBIC) technique showed that relative losses increased by up to an order of magnitude when the reverse bias applied during irradiation increased from 50 to 1500 V. The presence of reverse bias also led to equivalent losses in charge collection that would only be seen in irradiations with an order of magnitude higher fluence in unbiased APDs. The results demonstrate that bias-enhanced irradiation damage is insufficiently understood and must be accounted for in characterizations of radiation effects.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Boron Nitride Solid-State Neutron Detectors

The goal of this project is to build upon the work performed under the Texas Tech IDEAS project (DE-AR0000964 monitored by Dr. Isik Kizilyalli) to bring the developed B-10 enriched hexagonal boron nitride (h- 10 BN or 10 BN or BN) semiconductor neutron detector technology to the next level of maturity. In comparison to He-3 ( 3 He) gas detectors, BN neutron detectors possess all the intrinsic advantages of semiconductor devices: light weight, compact size, fast response speed, high spatial resolution, high temperature and low voltage operation capability, ease of mass production via existing semiconductor infrastructures, low cost of operation and maintenance, flexible form factors, and durability. The project will develop a prototype h- 10 BN neutron detector as a potential replacement for the 3 He gas neutron detectors (LND 25185 or equivalent) used in various neutron survey meters currently produced and commercialized by Ludlum Measurements, Inc. (LMI). To increase the overall detection efficiency, it is essential to maximize the collection efficiency of charge carriers (electrons and holes) generated by the nuclear reaction, which demands a further push to achieve 10 BN epilayers with improved material quality. The material growth processes will be guided by characterization of structural, optical, and electrical properties of h-BN. Selective devices will be calibrated at LMI. During ARPA-E supporting period, the key material parameters of h-BN produced by metal organic chemical vapor deposition (MOCVD), including the layer thickness, mobility-lifetime product, surface recombination field and detector size for maintaining a high charge collection efficiency all have been improved by several orders of magnitude. These improvements have enabled the realization of high-performance h 10BN semiconductor thermal neutron detectors. Presently, h- 10 BN thermal neutron detectors developed under ARPA-E’s support hold the record high detection efficiency among all solid-state detectors at 59%. With further development in manufacturing, there is no question that h-BN detectors will replace the traditional He-3 gas detectors in certain application areas by offering obvious advantages of semiconductor technologies over gas detectors and opportunities for users to dedicate the scarce and expensive supply of He-3 gas to other application areas where substitutes of He-3 gas are not possible.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Characterizing electron-collecting CdTe for use in a 77 ns burst-rate imager

The Keck-PAD (pixel array detector) was developed at Cornell as a burst-rate imager capable of recording images from successive electron bunches (153 ns period) from the Advanced Photon Source (APS). Both Si and hole-collecting Schottky CdTe have been successfully bonded to this ASIC (application-specific integrated circuit) and used with this frame rate. The facility upgrades at the APS will lower the bunch period to 77 ns, which will require modifications to the Keck-PAD electronics to image properly at this reduced period. In addition, operation at high X-ray energies will require a different sensor material having a shorter charge collection time. For the target energy of 40 keV for this project, simulations have shown that electron-collecting CdTe should allow >90% charge collection within 35 ns. This collection time will be sufficient to sample the signal from one frame and prepare for the next. 750 µm-thick electron-collecting Schottky CdTe has been obtained from Acrorad and bonded to two different charge-integrating ASICs developed at Cornell, the Keck-PAD and the CU-APS-PAD. Carrier mobility has been investigated using the detector response to single X-ray bunches at the Cornell High Energy Synchrotron Source and to a pulsed optical laser. The tests indicate that the collection time will meet the requirements for 77 ns imaging.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Heavy ion, focused x-ray, and pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. It is observed that these transient shape characteristics depend on the source (ion, x-ray, or laser), even when similar amounts of charge are generated. Finally, the observed differences are examined and explained in terms of basic charge collection mechanisms.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Acoustic plasmons and conducting carriers in hole-doped cuprate superconductors

The layered crystal structures of cuprates enable collective charge excitations fundamentally different from those of three-dimensional metals. Acoustic plasmons have been observed in electron-doped cuprates by resonant inelastic X-ray scattering (RIXS); in contrast, whether acoustic plasmons exist in hole-doped cuprates is under debate, despite extensive measurements. This contrast led us to investigate the charge excitations of hole-doped cuprate La 2-x Sr x CuO 4 . Here we present incidentenergy-dependent RIXS measurements and calculations of collective charge response via the loss function to reconcile the aforementioned issues. Our results provide evidence for the acoustic plasmons of Zhang-Rice singlet (ZRS), which has a character of the Cu 3d x 2 -y 2 strongly hybridised with the O 2p orbitals; the metallic behaviour is implied to result from the movement of ZRS rather than the simple hopping of O 2p holes.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Workplace Charging Data Collection and Behavior

This paper is a partner to the actual data being released. The data gathered and maintained by NREL tracks over 300 vehicles during the course of a 4-year period and how they behave in a workplace charging capacity. The data is further enriched by examining the effect of free charging versus paid charging. There is also a distinction in data marked by the onset of Covid-19. Vehicles are owned and operated by employees and range from smaller pack PHEV to larger pack BEVs.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Low-energy radiative backgrounds in CCD-based dark-matter detectors

The reach of sub-GeV dark-matter detectors is at present severely affected by low-energy events from various origins. We present the theoretical methods to compute the single- and few-electron events that arise from secondary radiation emitted by high-energy particles as they pass through detector materials and perform a detailed simulation to quantify them at (Skipper) CCD-based experiments, focusing on the SENSEI data collected at Fermilab near the MINOS cavern. The simulations account for the generation of secondaries from Cherenkov and luminescent recombination radiation; photo-absorption in the bulk, backside layer, pitch adapter, and epoxy; the photon reflection and refraction at interfaces; thin-film interference; the roughness of the interfaces; the dynamics of charges produced in the highly doped CCD-backside-layers; and the partial charge collection on the CCD backside. We consider several systematic uncertainties, notably those stemming from the backside modeling, which we estimate with a “fiducial” and an “extreme” charge-diffusion model, with the former model being preferred due to better agreement with partial-charge collection data. We find that Cherenkov photons constitute about 30% of the observed single-electron events for both diffusion models; radiative recombination contributes negligibly to the event rate for the fiducial model, although it can dominate over Cherenkov for the extreme model. We also estimate the fraction of 2-electron events that arise from 1-electron event coincidences in the same pixel, finding that the entire 2-electron rate can be explained by coincidences of radiative events and spurious charge. Accounting for both radiative and non-radiative backgrounds, we project the sensitivity of future Skipper-CCD-based experiments to different dark-matter models. For light-mediator models with dark-matter masses of 1, 5, and 10 MeV, we find that future experiments with 10-kg-year exposures and successful background mitigation could have a sensitivity that is larger by 9, 3, and 2 orders of magnitude, respectively, when compared to an experiment without background improvements.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Effects of excess Te on flux inclusion formation in the growth of cadmium zinc telluride when forced melt convection is applied

The presence of second phase defects, particularly flux inclusions of tellurium rich composition, are of great concern for charge collection efficiency in cadmium zinc telluride (CZT) and cadmium telluride (CT) material intended for applications such as radiation detection. These inclusions can distort applied electric field lines within the detector as well as act as trapping centers for charge carriers. Reduction and/or elimination of these inclusions is required to achieve appropriate charge collection efficiencies, especially in detectors of thicknesses greater than 5 mm. These so-called flux inclusions are understood to form as a consequence of constitutional undercooling at the crystal growth interface. In this study, a forced melt convection technique was applied in Vertical Bridgman (VB) melt growth of CZT without reducing imposed growth rates of ~2 mm/hr. Several rotation profiles were tested while adjusting the melt composition from 51.62 to 61.75 atomic percent (at%) Te where the Te concentration was initially increased to improve overall material purity. With forced melt convection, the best inclusion distributions were achieved with highly Te rich melt compositions, far beyond the stoichiometric composition range for the CZT system. Average inclusion diameters were reduced to 2 µm while inclusions greater than 5 µm were essentially eliminated. Composition analyses of these ingots revealed near equilibrium concentrations of Te, even with ingots grown from Te concentrations as high as 61.75 at% Te. In this paper, a recipe for the reduction of inclusions in CZT melt growth is put forward and the implications of this method on our understanding of inclusion formation are discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Visualizing interfacial collective reaction behaviour of Li–S batteries

Benefiting from high energy density (2,600 Wh kg -1 )) and low cost, lithium-sulfur (Li-S) batteries are considered promising candidates for advanced energy-storage systems. Despite tremendous efforts in suppressing the long-standing shuttle effect of lithium polysulfides, understanding of the interfacial reactions of lithium polysulfides at the nanoscale remains elusive. This is mainly because of the limitations of in situ characterization tools in tracing the liquid-solid conversion of unstable lithium polysulfides at high temporal-spatial resolution. There is an urgent need to understand the coupled phenomena inside Li-S batteries, specifically, the dynamic distribution, aggregation, deposition and dissolution of lithium polysulfides. Here, by using in situ liquid-cell electrochemical transmission electron microscopy, we directly visualized the transformation of lithium polysulfides over electrode surfaces at the atomic scale. Notably, an unexpected gathering-induced collective charge transfer of lithium polysulfides was captured on the nanocluster active-centre-immobilized surface. It further induced an instantaneous deposition of nonequilibrium Li2S nanocrystals from the dense liquid phase of lithium polysulfides. Without mediation of active centres, the reactions followed a classical single-molecule pathway, lithium polysulfides transforming into Li 2 S 2 and Li 2 S step by step. Molecular dynamics simulations indicated that the long-range electrostatic interaction between active centres and lithium polysulfides promoted the formation of a dense phase consisting of Li + and S n 2- (2 < n ≤ 6), and the collective charge transfer in the dense phase was further verified by ab initio molecular dynamics simulations. Finally, the collective interfacial reaction pathway unveils a new transformation mechanism and deepens the fundamental understanding of Li-S batteries.

25 ENERGY STORAGE↗
DOE OSTI2023

Using 3D position sensitivity to reveal response non-uniformities in CdZnTe, TlBr, and CsPbBr 3 detectors

Position sensitivity enables the correction of response non-uniformities in room-temperature semiconductor detectors caused by crystal defects and other factors. It can also be used to pinpoint the exact location of crystal defects responsible for the response variations. This work describes a technique for revealing and visualizing the detector regions affecting the charge collection efficiency in CdZnTe (CZT), TlBr, and CsPbBr 3 detectors configured as position-sensitive virtual Frisch-grid (VFG) devices. The technique correlates the photopeak events in energy spectra with their spatial distributions inside the detectors using the position information. By selecting the events from narrow energy intervals within a photopeak, we can visualize the detector volumes with particular charge collection efficiencies, which, in turn, correlate with the locations of electrode and crystal defects. Here, we demonstrate this technique in several examples. Columnar structures in the volume plots (position distribution maps) are consistent with signal losses near or at the anode in selected samples of CZT and TlBr. Structures exhibiting a distinct depth dependence are consistent with grain boundaries or other crystal defects.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗
DOE OSTI2025

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Review of Direct Neutron Conversion and Detection Processes

Commercial and laboratory neutron detection systems use indirect neutron response of materials like pressurized helium-3 (via nuclear reaction 3He(n, p)3H) to measure and count neutrons emanating from a source. Recently a host of semiconductors, especially a ternary semiconductor of lithium indium diselenide (6LiInSe2) and a quaternary alloy of enriched lithium-6, indium, phosphorous, and selenium (6LiInP2Se6), have shown promising neutron counting possibilities by directly converting neutrons into charge-carrying elements within the body of the semiconductor. These semiconductors have high thermal neutron capture cross sections, suitable energy bandgaps (~2.0 electron volts) for room-temperature operations, and a favorable electronic band structure for efficient electron charge transport. The article examines the semiconductor properties of these compounds in terms of their neutron counting capabilities and possible ways to extract neutron energy information from them. Lithium-6 and boron-10 (with thermal neutron absorption cross sections of 938 ± 6 and 3855 ± 26 barns, respectively) produce charged particles to be measured via indirect neutron interactions. The efficiency of indirect conversion neutron detectors is limited because of the inefficiencies in conversion mechanism. In case of direct conversion, the neutrons create charged particles in a single material for neutron capture and charge collection, increasing detection efficiency. Unlike 3He proportional counters, which provide no neutron energy information, the semiconductors can be used as neutron energy spectrometer. Fully resolved neutron energy by 6LiInP2Se6 from a plutonium-beryllium source has been reported in the literature. We will discuss the influence of these multilayered semiconductors’ crystallographic structures and growth techniques on neutron energy determination.

61 RADIATION PROTECTION AND DOSIMETRY↗