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Results for “chemical etching”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

X-ray photoelectron spectroscopy study of chemically-etched Nd-Ce-Cu-O surfaces

Acetic acid, Br2, and HCl solutions are investigated for removing insulating species from Nd(1.85)Ce(0.15)CuO(4-delta) (NCCO) thin film surfaces. X-ray photoelectron spectroscopy (XPS) shows that the HCl etch is most effective, yielding O 1s spectra comparable to those obtained from samples cleaned in vacuum and a clear Fermi edge in the valence band region. Reduction and oxidation reversibly induces and eliminates, respectively, Fermi level states for undoped samples, but has no clearly observable effect on the XPS spectra for doped samples. Reactivity to air is much less for NCCO compared to hole superconductors, which is attributed to the lack of reactive alkaline earth elements in NCCO.

Vasquez, R. P.↗
NASA NTRS2008

Part Marking and Identification Materials on MISSE

Many different spacecraft materials were flown as part of the Materials on International Space Station Experiment (MISSE), including several materials used in part marking and identification. The experiment contained Data Matrix symbols applied using laser bonding, vacuum arc vapor deposition, gas assisted laser etch, chemical etch, mechanical dot peening, laser shot peening, and laser induced surface improvement. The effects of ultraviolet radiation on nickel acetate seal versus hot water seal on sulfuric acid anodized aluminum are discussed. These samples were exposed on the International Space Station to the low Earth orbital environment of atomic oxygen, ultraviolet radiation, thermal cycling, and hard vacuum, though atomic oxygen exposure was very limited for some samples. Results from the one-year exposure on MISSE-3 and MISSE-4 are compared to those from MISSE-1 and MISSE-2, which were exposed for four years. Part marking and identification materials on the current MISSE -6 experiment are also discussed.

Finckenor, Miria M.↗
NASA NTRS2008

Part Marking and Identification Materials' for MISSE

The Materials on International Space Station Experiment (MISSE) is being conducted with funding from NASA and the U.S. Department of Defense, in order to evaluate candidate materials and processes for flight hardware. MISSE modules include test specimens used to validate NASA technical standards for part markings exposed to harsh environments in low-Earth orbit and space, including: atomic oxygen, ultraviolet radiation, thermal vacuum cycling, and meteoroid and orbital debris impact. Marked test specimens are evaluated and then mounted in a passive experiment container (PEC) that is affixed to an exterior surface on the International Space Station (ISS). They are exposed to atomic oxygen and/or ultraviolet radiation for a year or more before being retrieved and reevaluated. Criteria include percent contrast, axial uniformity, print growth, error correction, and overall grade. MISSE 1 and 2 (2001-2005), MISSE 3 and 4 (2006-2007), and MISSE 5 (2005-2006) have been completed to date. Acceptable results were found for test specimens marked with Data Matrix(TradeMark) symbols by Intermec Inc. and Robotic Vision Systems Inc using: laser bonding, vacuum arc vapor deposition, gas assisted laser etch, chemical etch, mechanical dot peening, laser shot peening, laser etching, and laser induced surface improvement. MISSE 6 (2008-2009) is exposing specimens marked by DataLase(Registed TradeMark), Chemico technologies Inc., Intermec Inc., and tesa with laser-markable paint, nanocode tags, DataLase and tesa laser markings, and anodized metal labels.

Roxby, Donald↗
NASA NTRS1983

Etching Integrated Circuits

20-page report reviews methods available for etching specific layers on wafers and discusses automation techniques and features on one particular automated system. Compares two major etching methods, chemical (wet) and plasma (dry), and discusses areas in need of development. Methods covered include "dip-and-dunk" manual method of chemical etching, automated chemical etching, and plasma etching.

Kennedy, B. W.↗
DOE OSTI2024

Large area nanoscale patterning of functional materials using organosilicate ink based nanotransfer printing

Abstract This paper presents a versatile nanotransfer printing method for achieving large-area sub-micron patterns of functional materials. Organosilicate ink formulations combined with effective release layers have been shown to facilitate patterning of materials through the commonly used patterning approaches—lift off, physical etching and chemical etching. In this paper, we demonstrate that organosilicate ink formulations function as an effective resist owing to its superior physico-chemical stability whereas the release layers ensure clean removal of the resist post patterning. We successfully demonstrate patterning of sub-micron structures (800 nm feature sizes) of chromium metal through the lift off approach, silicon through reactive ion etching technique and silicon dioxide through wet chemical etching technique illustrating the versatility of the reported method. This patterning methodology represents a significant advancement in enabling nanostructure fabrication within resource-constrained laboratories. The approach requires nothing more than a master mold containing the desired structures, a spin coater, a low-temperature hotplate, and a desktop reactive ion etch tool.

Engineering↗
DOE OSTI2020

Metal-assisted etch combined with regularizing etch

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Using block-copolymer nanolithography as a tool to sensitively evaluate variation in chemical dry etching rates of semiconductor materials with sub-5 nm resolution

Ion implantation is a robust and established method to customize the electronic properties of Si. However, fabricating doped, ultrafine semiconductor nanostructures can be challenging. Ion implantation has well-established effects on the dry etch rates of Si, which becomes increasingly consequential as the target dimension shrinks below a few tens of nanometers. While dry etching arrays of block copolymer-templated nanoscale holes (pitch = 37.5 nm, diameter ~25 nm) into p-type, n-type, and undoped Si, we observed that the lateral etch rate was notably larger for the n-type regions than p-type or undoped regions. By doing image analyses on high resolution electron micrographs of the nanostructured hole arrays, we were able to extract the porosity and average radii of the holes with subnanometer sensitivity and compare the relative etch rates between different doping conditions. We found that degenerately doped n-type silicon consistently etches between approximately 17% and 27% faster in the lateral direction than p-type Si, resulting in significantly larger porosity and, consequently, less mechanical stability. Here, we demonstrate that top-down dimensional analysis of a densely packed porous nanostructure is a robust method for assessing extremely small differences in the lateral, chemical etch rate of doped Si to a degree of sensitivity that was previously unachievable. The minute, dense-packed nature of block copolymer self-assembled nanostructures is shown to be ideal for this application. This proposed method could be useful for designing fabrication processes for heterogeneous nanostructures, as slight dry etch rate variations that may be within process tolerance at the micrometer-scale appear to have nontrivial consequences at the nanometer scale.

42 ENGINEERING↗
DOE OSTI2023

Characterization of Microwave Loss Using Multimode Superconducting Resonators

Measuring the losses arising from different materials and interfaces is crucial to improving the coherence of superconducting quantum circuits. Although this has been of interest for a long time, current studies can either only provide bounds to those losses, or require several devices for a complete characterization. In this work, we introduce a method to measure the microwave losses of materials and interfaces with a single multi-mode superconducting resonator. We demonstrate a formalism for analyzing the loss sensitivity of multi-mode systems and discuss the design strategies of multi-mode resonators for material loss studies. We present two types of multi-mode superconducting resonators for the study of bulk superconductors: the forky whispering-gallery-mode resonator (FWGMR) and the ellipsoidal cavity. We use these resonators to measure the surface dielectric, conductor, and seam losses of high-purity (5N5) aluminum and aluminum alloy (6061), as well as how they are affected by chemical etching, diamond turning, and thin-film coating. Here, we find that chemical etching and diamond turning reduce both the surface dielectric and conductive losses of high-purity aluminum, but provide no appreciable improvement to the seam. Coating the surfaces of diamond-turned aluminum alloys with e-beam evaporated or sputtered aluminum thinfilms significantly reduces all three losses under study. In addition, we study the effect of chemical etching on the surface of high-purity aluminum using transmission electron microscopy (TEM) and find that the chemical etching process creates a thinner and more uniform oxide layer, consistent with the observed improvement in the surface dielectric loss.

25 ENERGY STORAGE↗
NASA NTRS1986

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Leon, R. P.↗
NASA NTRS2003

Process for Smoothing an Si Substrate after Etching of SiO2

A reactive-ion etching (RIE) process for smoothing a silicon substrate has been devised. The process is especially useful for smoothing those silicon areas that have been exposed by etching a pattern of holes in a layer of silicon dioxide that covers the substrate. Applications in which one could utilize smooth silicon surfaces like those produced by this process include fabrication of optical waveguides, epitaxial deposition of silicon on selected areas of silicon substrates, and preparation of silicon substrates for deposition of adherent metal layers. During etching away of a layer of SiO2 that covers an Si substrate, a polymer becomes deposited on the substrate, and the substrate surface becomes rough (roughness height approximately equal to 50 nm) as a result of over-etching or of deposition of the polymer. While it is possible to smooth a silicon substrate by wet chemical etching, the undesired consequences of wet chemical etching can include compromising the integrity of the SiO2 sidewalls and undercutting of the adjacent areas of the silicon dioxide that are meant to be left intact. The present RIE process results in anisotropic etching that removes the polymer and reduces height of roughness of the silicon substrate to less than 10 nm while leaving the SiO2 sidewalls intact and vertical. Control over substrate versus sidewall etching (in particular, preferential etching of the substrate) is achieved through selection of process parameters, including gas flow, power, and pressure. Such control is not uniformly and repeatably achievable in wet chemical etching. The recipe for the present RIE process is the following: Etch 1 - A mixture of CF4 and O2 gases flowing at rates of 25 to 75 and 75 to 125 standard cubic centimeters per minute (stdcm3/min), respectively; power between 44 and 55 W; and pressure between 45 and 55 mtorr (between 6.0 and 7.3 Pa). The etch rate lies between approximately equal to 3 and approximately equal to 6 nm/minute. Etch 2 - O2 gas flowing at 75 to 125 stdcm3/min, power between 44 and 55 W, and pressure between 50 and 100 mtorr (between 6.7 and 13.3 Pa).

Turner, Tasha↗
DOE OSTI2024

Nanoengineering of 2D MBenes for energy storage applications: A review

2D transition metal borides (MBenes), a flourishing member of the 2D nanomaterial family, show great potential in a number of study areas. MBenes have received increasing attention thanks to their excellent electrical conductivity, structural and mechanical properties, and chemical stability, which have captivated researchers and sparked further exploration. Extensive theoretical and experimental investigations have unveiled its remarkable potential as electrode materials for electrochemical storage applications, making MBenes a subject of great interest. Despite the growing interest and numerous studies conducted, there is a lack of a comprehensive and systematic appraisal of MBenes' applications in electrochemical energy storage systems. Here, in light of this, firstly, we provide an overview of the current progress in the fabrication and characterization of MAB phases and MBenes. For the synthesis of MBenes, the following fabrication techniques were discussed; liquid-phase exfoliation, solid-state mechanical exfoliation, chemical vapor deposition, high-pressure chemical vapor deposition, microwave-assisted chemical etching, and ultrasound-assisted chemical etching methods. Then, we delve into the captivating potential of MBenes, specifically in the realm of energy storage applications and their role in enhancing electrochemical storage capabilities. The discussion encompasses their application in lithium-ion, lithium-sulfur, and lithium-selenide batteries, supercapacitors and other energy storage systems, providing a comprehensive perspective on their contributions to the energy landscape. Finally, a brief but significant summary of the challenges and opportunities of MBenes in practical applications was summarized. The present review provides a guide and scientific motivation for creating and developing advanced MBene-based nanomaterials, addressing the growing demand for cutting-edge energy storage systems.

25 ENERGY STORAGE↗