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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Status of Plasma Physics Techniques for the Deposition of Tribological Coatings

This paper reviews the plasma physics deposition techniques of sputtering and ion-plating. Their characteristics and potentials are discussed in terms of synthesis or deposition of tribological coatings. Since the glow discharge or plasma generated in the conventional sputtering and ion-plating techniques has a low ionization efficiency (<0.1%), rapid advances have been made in equipment design to further increase the ionization efficiency. The enhanced ionization favorably affects the nucleation and growth sequence of the coating. This leads to improved adherence and coherence, higher density, favorable morphological growth, and reduced internal stresses in the coatings. As a result, desirable coating characteristics can be precision tailored. Tribological coating characteristics of sputtered solid film lubricants such as MoS2, ion-plated soft gold and lead metallic films, and sputtered and ion-plated wear-resistant refractory compound films such as nitrides and carbides are discussed.

Talivaldis Spalvins↗
DOE OSTI2024

Formation and degradation mechanism of methylammonium lead iodide perovskite thin film fabricated by electrospray technique

Electrospray deposition technique has been reported previously for fabricating effective and stable perovskite thin film, leading to efficient perovskite solar cells. Here, in this work, a comprehensive investigation of the formation mechanism of methylammonium lead iodide perovskite (CH 3 NH 3 PbI 3 ) film by electrospray technique is demonstrated and compared to the formation mechanism through the conventional spin coating technique. In the electrospray process, charged MAI nanoparticles are gradually introduced onto the PbI 2 film, intercalating within the PbI 2 structure to produce the perovskite film. In contrast, the spin-coating method involves supplying the MAI solution in bulk, leading to perovskite crystal formation through the dissolution of the PbI 2 layer by the MAI solution, followed by recrystallization into perovskite oriented in the [110] direction, 30° inclined to the substrate. The impact of charge and the electric field on the formation of perovskite film using the electrospray is explored. Furthermore, the intrinsic stability of perovskite films is monitored in real-time in a highly humid environment (≥80 % relative humidity (RH)) using in-situ Grazing Incidence Wide Angle X-ray Scattering (GIWAXS), and a degradation mechanism is proposed to enhance the durability of the perovskite-based devices. The study further delves into the comparison of the stability of electrosprayed and spin-coated perovskite film, and the impact of humidity level and the presence of a hole-transporting layer on the stability of the perovskite layer. Overall, this work provides a detailed understanding of the formation and humidity-induced degradation mechanism of electrosprayed perovskite films, offering insights that can extend to various applications of perovskite materials.

14 SOLAR ENERGY↗
NASA NTRS2001

Atmospheric-Pressure-Spray, Chemical- Vapor-Deposited Thin-Film Materials Being Developed for High Power-to- Weight-Ratio Space Photovoltaic Applications

The key to achieving high specific power (watts per kilogram) space photovoltaic arrays is the development of high-efficiency thin-film solar cells that are fabricated on lightweight, space-qualified substrates such as Kapton (DuPont) or another polymer film. Cell efficiencies of 20 percent air mass zero (AM0) are required. One of the major obstacles to developing lightweight, flexible, thin-film solar cells is the unavailability of lightweight substrate or superstrate materials that are compatible with current deposition techniques. There are two solutions for working around this problem: (1) develop new substrate or superstrate materials that are compatible with current deposition techniques, or (2) develop new deposition techniques that are compatible with existing materials. The NASA Glenn Research Center has been focusing on the latter approach and has been developing a deposition technique for depositing thin-film absorbers at temperatures below 400 C.

Hepp, Aloysius F.↗
NASA NTRS1978

Mossbauer studies of bulk and thin-film FeTe

In study, dependence of Mossbauer parameters on film thickness and film substrate was measured and related to iron tellurium structure. Report also describes film deposition technique (flash deposition) and Mossbauer apparatus.

Aggarwal, K.↗
NASA NTRSDate not supplied

Metallic Environmentally Resistant Coating Rapid Innovation Initiative

Lightweight alloys such as aluminum (Al) and titanium (Ti) are often specified for space systems to minimize mass while maintaining structural integrity [1,2]. Such alloys however, have poor tribological response (high friction and wear), especially in extreme space environments, which becomes worse with the additional presence of lunar regolith. This leads to short lifetimes and premature failures that will ultimately limit long term operations on the lunar surface [2]. This project is addressing this technology gap by developing advanced wear- and radiation-resistant coatings for lightweight parts to extend the life-time and sustainability of both lunar and Martian assets. Ceramics were considered for their high wear resistance, but were rejected because of their low fracture toughness, which would be especially problematic for structural components. The novel and existing coating technologies and deposition methods are being tested in this project. The coating materials are Boron Nitride-Aluminum (BN-Al), Nickle Titanium (NiTi), Aluminum Oxide (AlO3), Ti64 with hBN at 2 and 10 vol percent (Ti-2vol%hBN and Ti-10vol%hBN), and the deposition techniques are high pressure cold-spray (CS) and ambient and vacuum plasma-spray (APS and VPS) [3,4,5]. BN-Al, NiTi, Ti-2vol%hBN, and Ti-10vol%hBN were applied with all three deposition techniques, and AlO3 was applied only using the APS deposition technique. A tungstenite (WS2) film was applied to the NiTi VPS coating. The coating and deposition technique configurations are being tested against several key end-use performance parameters. The parameters include the capabilities of the coatings under wear environments such as regolith simulant, thermal cycling from high (120°C) to cryogenic (-173°C), high vacuum (~10-7 torr), and pre- and post-exposure to ionizing particle radiation. Wear tests include pin on disk, three-body abrasion, and surface erosion by high velocity regolith impacts. The initial down selection is being performed using on virgin and environmental exposure samples using pin on disk and three body abrasion wear tests. From preliminary assessment of this testing, a few configurations were eliminated. Ti-10vol%hBN could not be applied using CS application and NiTi could not be applied using APS or CS application so these configurations did not get tested. Early pin on disk wear tests showed poor wear performance of BN-Al so this coating was eliminated early in the testing process. AlO3 on Al substrate did not survive thermal cycling, but wear testing is continuing for AlO3 on Ti substrate. A more detailed analysis is being con-ducted to further reduce the number of configuration for phase II and III. Phase II testing will include conventionally and additively manufactured substrates with surface erosion testing. In phase III, the coatings will be applied to three mechanism types: channel and slot, ball and socket, and a hinge joint. Each will demonstrate a different type of wear incidence. The mechanisms and their base materials are of direct interest to the end users and infusion points: the Human Landing System (HLS) and the Lunar Surface Innovation Initiative (sustained lunar surface operations). The technology development project is based out of Marshall Space Flight Center, has partnered with Florida International University (Miami, FL) and Plasma Processes (Huntsville, Al), and is supported by a group of NASA mentors from different centers.

dust mitigation↗
NASA NTRS1990

Making Lightweight Structures By Vapor Deposition

Technique developed for fabrication of stiff, strong, lightweight structures of silicon carbide or other materials by any of several deposition processes. Structures made by method can have complicated shapes. Ability to manufacture complex shape from pure deposited SiC useful and leads to new products in several fields. These lightweight structures used as backup structures for optical components, as structural components in automotive, aerospace, and outer space applications, and as lightweight parts of furniture for outer space.

Goela, Jitendra S.↗
DOE OSTI2020

Atmospheric Pressure Plasma Deposition of TiO2: A Review

Atmospheric pressure plasma (APP) deposition techniques are useful today because of their simplicity and their time and cost savings, particularly for growth of oxide films. Among the oxide materials, titanium dioxide (TiO2) has a wide range of applications in electronics, solar cells, and photocatalysis, which has made it an extremely popular research topic for decades. Here, we provide an overview of non-thermal APP deposition techniques for TiO2 thin film, some historical background, and some very recent findings and developments. First, we define non-thermal plasma, and then we describe the advantages of APP deposition. In addition, we explain the importance of TiO2 and then describe briefly the three deposition techniques used to date. We also compare the structural, electronic, and optical properties of TiO2 films deposited by different APP methods. Lastly, we examine the status of current research related to the effects of such deposition parameters as plasma power, feed gas, bias voltage, gas flow rate, and substrate temperature on the deposition rate, crystal phase, and other film properties. The examples given cover the most common APP deposition techniques for TiO2 growth to understand their advantages for specific applications. In addition, we discuss the important challenges that APP deposition is facing in this rapidly growing field.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1993

Thin film processing of photorefractive BaTiO3

During the period covered by this report, October 11, 1991 through October 10, 1992, the research has progressed in a number of different areas. The sol-gel technique was initially studied and experimentally evaluated for depositing films of BaTiO3. The difficulties with the precursors and the poor quality of the films deposited lead to the investigation of pulsed laser deposition as an alternative approach. The development of the pulsed laser deposition technique has resulted in continuous improvements to the quality of deposited films of BaTiO3. The initial depositions of BaTiO3 resulted in amorphous films, however, as the pulsed laser deposition technique continued to evolve, films were deposited in the polycrystalline state, then the textured polycrystalline state, and most recently heteroepitaxial films have also been successfully deposited on cubic (100) oriented SrTiO3 substrates. A technique for poling samples at room temperature and in air is also undergoing development with some very preliminary but positive results. The analytical techniques, which include x-ray diffraction, ferroelectric analysis, UV-Vis spectrophotometry, scanning electron microscopy with x-ray compositional analysis, optical and polarized light microscopy, and surface profilometry have been enhanced to allow for more detailed evaluation of the samples. In the area of optical characterization, a pulsed Nd:YAG laser has been incorporated into the experimental configuration. Now data can also be acquired within various temporal domains resulting in more detailed information on the optical response of the samples and on their photorefractive sensitivity. The recent establishment of collaborative efforts with two departments at Johns Hopkins University and the Army Research Lab at Fort Belvoir has also produced preliminary results using the metallo-organic decomposition technique as an alternative method for thin film processing of BaTiO3. RF and DC sputtering is another film deposition approach that should be initiated in the near future. Other techniques for optical characterization, which may even allow for intragrannular (within single grains) investigations, are also being considered.

Schuster, Paul R.↗
NASA NTRS2018

Channel Wall Nozzle Manufacturing and Hot-Fire Testing using a Laser Wire Deposition Closeout Technique for Liquid Rocket Engines

A regeneratively-cooled nozzle for liquid rocket engine applications is a significant cost of the overall engine due to the complexities of manufacturing a large thin-walled structure that must operate in extreme temperature and pressure environments. NASA has been investigating and advancing methods for fabrication of liquid rocket engine channel wall nozzles to realize further cost and schedule improvements. The methods being evaluated are targeting increased scale required for current NASA and commercial space programs. Several advanced rapid fabrication methods are being investigated for forming of the inner liner, producing the coolant channels, closeout of the coolant channels, and fabrication of the manifolds. NASA Marshall Space Flight Center (MSFC) completed process development and subscale hot-fire testing of a series of these advanced fabrication channel wall nozzle technologies to gather performance data in a relevant environment. The primary fabrication technique being discussed in this paper is Laser Wire Deposition Closeout (LWDC). This process has been developed to significantly reduce time required for closeouts of regeneratively-cooled slotted liners. It allows for channel closeout to be formed in place in addition to the structural jacket without the need for channel fillers or complex tooling. Additional technologies were also tested as part of this program including water jet milling and arc-based additive manufacturing deposition. Each nozzle included different fabrication features, materials, and methods to demonstrate durability in a hot-fire environment. The results of design, fabrication and hot-fire testing performance is discussed in this paper.

Gradl, Paul R.↗
NASA NTRS2006

Coating MCPs with AlN and GaN

A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0<x<1). These materials exhibit attractively high degrees of chemical, mechanical, and thermal stability plus acceptably high resistance to sputtering. The electron-excitation cross sections of these materials are expected to exceed those of several other materials (including diamond) that are, variously, in use or under development for the same purpose. Moreover, by doping these materials with silicon, one can render them partly electrically conductive, thereby suppressing the undesired accumulation of electric charge that could otherwise occur during bombardment by ions. For experiments, thin films of AlN and GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N are supplied in elemental form, so that there is no need for thermal decomposition at the substrate surface. The nitride films thus formed were, variously, amorphous or polycrystalline. The nitride films were coated with surface layers of gold <100 thick. The MCPs were tested in a standard configuration in which the output stage of a first MCP was coupled to the input stage of a second MCP. Each pair of MCPs was mounted in a standard holder that included front and back contact rings and an anode for collecting the output electrons of the second MCP. The MCP pairs were biased at potentials between 1.7 and 1.9 kV, and count rates measured after preamplification and discrimination. To enable a direct comparison, in one pair, the second MCP was uncoated while the first MCP was coated over half its surface. The coated and uncoated sides of the half-coated MCP were exposed to fluxes of argon ions at kinetic energies of 1.0 and 0.5 keV. At 1.0 keV, the count rate for the coated side was about 2.3 times greater than that for the uncoated side; at 0.5 keV, the count rate for the coated side was about 1.8 times greater than that for the uncoated side.

Bensaoula, Abdelhakim↗
DOE OSTI2025

Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al 2 O 3 /GaN characterized by sputter-assisted ToF-SIMS

Deposition techniques, like atomic layer deposition (ALD), are used to form high-quality dielectrics for GaN-based metal–oxide–semiconductor (MOS) gate structures due to the lack of a reliable thermal oxide in GaN. Moreover, interfacial GaO x from pre-existing native oxides is thought to adversely impact channel carrier dynamics and induce undesired threshold voltage shifts in GaN-based MOS gate structures. Exposure of the GaN surface to the trimethylaluminum (TMA) precursor prior to standard alumina ALD decreases the native oxide layer on GaN, but the extent of chemical modification has not been well studied in the context of interface composition in a MOS gate structure. Herein, we compare annealed 55 nm Al 2 O 3 dielectric films on GaN grown using either a water-first ALD process or a process including sequential pulses of TMA immediately before the initiation of Al 2 O 3 ALD. Time-of-Flight Secondary Ion Mass Spectrometry measures differences in the interfacial GaO x content between each ALD film. Here, it also detects surface contaminant species like Si, F, S, and C. Furthermore, we report the formation of an AlN species at the Al 2 O 3 /GaN interface, which is more prominent for the film grown using the TMA pre-pulse step. In general, this work demonstrates that the TMA pre-pulse step is an effective strategy for cleaning substrate surfaces prior to ALD.

Atomic layer deposition↗
NASA NTRS1976

Sputtering

The potential of using the sputtering process as a deposition technique is reviewed; however, the manufacturing and sputter etching aspects are also discussed. The basic mechanism for dc and rf sputtering is described. Sputter deposition is presented in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter etching, target geometry (coating and complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also discussed are some of the specific industrial areas which are turning to sputter deposition techniques.

Spalvins, T.↗
NASA NTRS1987

TWT efficiency improvement by a low-cost technique for deposition of carbon on MDC electrodes

A simple method of improving the TWT and multistage depressed collector (MDC) efficiency has been demonstrated. The efficiency improvement was produced by the application of a thin layer of carbon to the copper electrodes of the MDC by means of a rapid low-cost technique involving the pyrolysis of hydrocarbon oil in electric arc discharges. Experimental results with a representative TWT and MDC showed an 11 percent improvement in both the TWT and MDC efficiencies as compared to those of the same TWT and MDC with machined copper electrode surfaces. An extended test with a 550-W CW TWT indicated good durability of the carbon-coated electrode surfaces.

Ebihara, Ben T.↗
NASA NTRS1987

Traveling-wave-tube efficiency improvement by a low-cost technique for deposition of carbon on multistage depressed collector

A simple method of improving the traveling-wave-tube (TWT) and multistage depressed collector (MDC) efficiency has been demonstrated. The efficiency improvement was produced by the application of a thin layer of carbon to the copper electrodes of the MDC by means of a rapid, low-cost technique involving the pyrolysis of hydrocarbon oil in electric arc discharges. Experimental results with a representative TWT and MDC showed an 11 percent improvement in both the TWT and MDC efficiencies as compared to those of the same TWT and MDC efficiencies with bare copper electrode surfaces. An extended test with a 500-W, continuous wave (CW) TWT and small-sized MDC indicated good stability of the carbon coated electrode surfaces after a relatively small initial degradation in TWT overall and apparent MDC efficiencies.

Ebihara, Ben T.↗
NASA NTRS1976

Sputtering

This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

Spalvins, T.↗
NASA NTRS1970

Technique for depositing silicon dioxide on indium arsenide improves adhesion

Planar array processing of indium arsenide wafers includes dicing into a prescribed geometry, then cleaning and drying, and finally pre-oxidizing in an oxygen atmosphere at 500 degrees C. The last step forms an oxide interface between the InAs surface and a glow discharge deposited layer of silicon dioxide.

Source record↗