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Results for “dielectric solar cell”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Dielectric breakdown in a dilute plasma.

Description of tests performed to determine the effects of high voltages on dielectrics that are to insulate solar cell arrays operating at voltages up to 16 kV from the electrically active plasma of the space environment at 500 km altitude. The tests were performed on dielectrics considered for this application at positive bias voltages as high as 20 kV dc relative to ground in an argon plasma with electron number densities of approximately one million per cu cm. Teflon specimens displayed higher breakdown voltages than all other dielectrics tested.

Mckinzie, D. J., Jr.↗
DOE OSTI2021

Effective Dielectric Passivation Scheme in Area-Selective Front/Back Poly-Si/SiOx Passivating Contact Solar Cells

Despite the high efficiencies reached by heavily doped poly-Si/SiO x passivating contact solar cells, challenges like the high front parasitic absorption still limit their performance. Previously, we showed a wet etching technique using self-aligned metal grids to remove the front poly-Si in the non-metallized region. Here, we focus on the effective dielectric passivation on this tunneling oxide/n + in-diffused region. The effect of poly-Si thickness was studied to balance between the passivation quality and the current gain. We then compared various dielectric passivation schemes using SiN x , Al 2 O 3 , and stacks thereof via injection-level dependent lifetime and the transfer length method. We demonstrate a SiN x /Al 2 O 3 stack yielded the best passivation performance within device process limitation and obtained an improved front/back poly-Si/SiO x passivating contact device, with a short circuit current density of 41.8 mA/cm 2 and an efficiency of 21.8%.

anisotropic wet etching↗
NASA NTRS1978

A search for space energy alternatives

This paper takes a look at a number of schemes for converting radiant energy in space to useful energy for man. These schemes are possible alternatives to the currently most studied solar power satellite concept. Possible primary collection and conversion devices discussed include the space particle flux devices, solar windmills, photovoltaic devices, photochemical cells, photoemissive converters, heat engines, dielectric energy conversion, electrostatic generators, plasma solar collectors, and thermionic schemes. Transmission devices reviewed include lasers and masers.

Gilbreath, W. P.↗
NASA NTRS1985

An investigation of arc discharging on negatively biased dielectric conductor samples in a plasma

Proposals are now being developed for the construction of high-power photovoltaic systems for operation in low Earth orbit, where the plasma number density is about 1,000 to 1,000,000 per cubic cm. Existing data indicate that interactions between the plasma and high-voltage surfaces of an orbiting power system will occur. In ground tests, where the applied voltage is increased negatively from ground, the array current collection shows an approximately linear rise until it terminates in arcing at greater than several hundred volts negative. This arcing may reduce the power generation efficiency and could possibly affect the low-level logic circuits of the spacecraft. Therefore it is important that the arcing phenomenon be well understood. This study is a survey of the behavior of different dielectric-conductor samples, including a solar cell module, that were biased negatively in a low-density plasma environment with the intent of defining arc discharge conditions and characteristics. Procedures and results are discussed.

Miller, W. L.↗
DOE OSTI2025

Dielectric constant engineering of nonfullerene acceptors enables a record fill factor of 83.58% and a high efficiency of 20.80% in organic solar cells

Organic solar cells (OSCs) have achieved power conversion efficiencies (PCEs) surpassing 20%, but their development remains hindered by the inherently low dielectric constant (εr) of organic semiconductors, which limits charge transport and contributes to serious recombination losses. Herein, we present a comprehensive strategy to overcome the challenge by engineering the dielectric properties of nonfullerene acceptors (NFAs). Two Y-series NFAs of BTP-N3F and BTP-C3F have been synthesized featuring trifluoromethyl (CF 3 ) end-capped alkyl side chains. This molecular design significantly enhances the dipole moment and ε r (up to ∼5.9) when compared to the reference acceptor Y6 (∼3), reducing the exciton binding energy (E b ) and improving charge transport. Furthermore, the incorporation of a high-εr polymer additive, poly(pentafluorostyrene) (PPFS), synergistically improves the active layer morphology and dielectric properties, enabling efficient charge extraction and reduced recombination losses. Devices based on the optimized D18-Cl/BTP-C3F system have achieved a record-high fill factor (FF) of 83.58% and an impressive PCE of 20.80%, setting a new benchmark for OSCs. Finally, our results underscore the pivotal role of ε r in enhancing device performance and establish a versatile pathway for advancing OSC efficiency and stability through molecular and morphological optimization.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Fluorinated Poly(Phenylene Ether Ketones)

Fluorinated poly(phenylene ether ketones) are colorless, transparent, low-dielectric-constant, highly thermally stable polymers. Particularly suitable for use as film and coating materials in electronic and thermal-control applications such as; passivant insulating coats and interlevel dielectrics in microelectronic circuits, or as protective transparent coats on solar cells or mirrors. Solubility and transparency of 12F-PEK along with its lower dielectric constant and other properties make it more useful as dielectric film and coating material in many applications.

St. Clair, Anne K.↗
NASA NTRS1980

The HEWAC pilot line experience

Advanced silicon solar cells with both electrical contacts on the back side of the cell are described. These high efficiency wrap around contact solar cells (HEWACS) utilize a screen printed dielectric insulation layer to isolate the 'n' and 'p' contacts from each other. Development of a device exhibiting high AMO conversion efficiencies is addressed along with the processing of such cells to a point where cell fabrication can be carried out by production personnel under operating production line conditions.

Gillanders, M.↗
DOE OSTI2020

Influence of Charge Transport Layers on Capacitance Measured in Halide Perovskite Solar Cells

Capacitance-based techniques were previously used to measure the electrical properties of halide perovskite solar cells (PSCs) such as defect activation energy and density, carrier concentration, and dielectric constant, which provide key information for evaluating the device performance. Herein, we show that capacitance-based techniques cannot be used to reliably analyze the properties of defects in the perovskite layer or at its interface, since the high-frequency capacitance signature is due to the response of charge carriers in the hole-transport layer (HTL). For HTL-free PSCs, the high-frequency capacitance can be considered as the geometric capacitance for analyzing the dielectric constant of the perovskite layer, since there is no trapping and de-trapping of charge carriers in the perovskite layer. We also find that the low-frequency capacitance signature can be used to calculate the activation energy of the ionic conductivity of the perovskite layer, but the overlapping effects with charge transport materials must be avoided.

14 SOLAR ENERGY↗
NASA NTRS1979

Development of improved wraparound contacts for silicon

A developmental process for fabricating 2 X 4 cm back surface field silicon solar cells featuring wraparound contacts and screen printed dielectric isolation is described. The process was then used to fabricate a number of cells for evaluation and study, as well as to establish the validity of the process sequence. While a number of cells exhibiting relatively good conversion efficiencies were produced, nearly all had low I-V curve factors for the level of efficiencies attained. Cells with conversion efficiencies of more than 15 percent (air mass zero and 25 C) had fill factors of only 0.76. Evidence as to the cause of this has not been conclusive, but is most probably linked to isolation failure in the wraparound dielectric and associated shunting problems.

Thornhill, J. W.↗
DOE OSTI2020

3,4‐Dicyanothiophene—a Versatile Building Block for Efficient Nonfullerene Polymer Solar Cells

Abstract In this contribution, a versatile building block, 3,4‐dicyanothiophene (DCT), which possesses structural simplicity and synthetic accessibility for constructing high‐performance, low‐cost, wide‐bandgap conjugated polymers for use as donors in polymer solar cells (PSCs), is reported. A prototype polymer, PB3TCN‐C66, and its cyano‐free analogue polymer PB3T‐C66, are synthesized to evaluate the potential of using DCT in nonfullerene PSCs. A stronger aggregation property in solution, higher thermal transition temperatures with higher enthalpies, a larger dipole moment, higher relative dielectric constant, and more linear conformation are exhibited by PB3TCN‐C66. Solar cells employing IT‐4F as the electron acceptor offer power conversion efficiencies (PCEs) of 11.2% and 2.3% for PB3TCN‐C66 and PB3T‐C66, respectively. Morphological characterizations reveal that the PB3TCN‐C66:IT‐4F blend exhibits better π–π paracrystallinity, a contracted domain size, and higher phase purity, consistent with its higher molecular interaction parameter, derived from thermodynamic calculations. Moreover, PB3TCN‐C66 offers a higher open‐circuit voltage and reduced energy loss than most state‐of‐the‐art wide‐bandgap polymers, without the need of additional electron‐withdrawing substituents. Two additional polymers derived from DCT also demonstrate promising performance with a higher PCE of 13.4% being achieved. Thus, DCT represents a versatile and promising building block for constructing high‐performance, low‐cost, conjugated polymers for application in PSCs.

Zhang, Bo↗
NASA NTRS1983

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗
DOE OSTI2023

High-Performance Passivating Contacts for Si PV Based on Engineered, Doped Nanopinholes through Dielectric Layers

We present a novel, industrially relevant method to fabricate high-performance poly-Si passivating contacts for Si PV. Passivating contacts based on SiOx/poly-Si layer stacks have been implemented in record-efficiency homojunction Si solar cells. In this technology, the carrier transport through a surface-passivating SiOx is enabled either by quantum-tunneling or nanopinholes. The doped poly-Si layer provides charge-carrier selectivity. Previously, the ISFH research group demonstrated a record 26.1% efficient Si homojunction cell, where transport pinholes in ~2 nm SiOx were produced by thermal breakdown at > 1000 degrees C, which is hard to control and is surface morphology-dependent. At room temperature, our new process uses electroless plating of Ag nanoparticles, followed by metal-assisted chemical etching. Nanogalvanic corrosion yields < 20 nm-wide nanopinholes in an insulating > 2 nm SiOx layer. The nanopinholes are filled by a heavily doped a-Si:H overlayer. We drive in the dopants into the Si wafer with subsequent high-temperature annealing. Preferential incorporation of dopants at pinhole locations results in nanoscale p+/n or n+/n junctions near the wafer interface. Each heavily-doped nanoscale pinhole junction collects and transports photogenerated carriers to the cell metal contacts. The density of the engineered nanopinholes can be tuned over a wide range which is critical for optimization of device performance. The same nanogalvanic corrosion principles can be applied to produce doped transport pinholes in well-passivating thick dielectric SiOx/SiNy stacks. Importantly, our process does not rely on thermal breakdown of the dielectric layers and can be applied to textured wafers resulting in Si solar cells with > 20% conversion efficiency.

dielectric layer↗
DOE OSTI2022

Self-Aligned Selective Area Front Contacts on Poly -Si/SiO x Passivating Contact c -Si Solar Cells

We report both polarity poly-Si/SiO x passivating contacts in a front/back device configuration may represent the next solar cell architecture after tunnel oxide passivating contacts (TOPCon) cells, but high parasitic absorption in the front poly -Si layer often limits its performance. This work explores a wet etching technique to remove the front poly -Si in the nonmetallized regions using self-aligned metal grids as an etch mask. We systematically examine various dielectric layers (SiN x ,Al 2 O 3 , and stacks thereof) to study the repassivation of the etched n + surface, and find that an SiN x /Al 2 O 3 passivation stack can effectively repassivate the etched surface, which we attribute to field-effect passivation from the positive fixed charge from the SiN x layer, and excellent chemical passivation property from Al 2 O 3 in the form of atomic H. We demonstrate a front/back poly-Si/SiO x passivating contact device, with an open-circuit voltage (V oc ) of 690 mV, short-circuit current density (J sc ) of 39.8 mA/cm 2 , fill factor of 78%, and power conversion efficiency of 21.4%. Furthermore, simulations using SunSolve and Quokka 3 show good agreement with both the optical and electrical properties of the experimental device. The power loss analysis reveals improvements in the optical loss from the back Ti adhesion and front SiN x layers would lead to a 23.5% device. Lastly, a techno-economic model compares the production cost of this improved cell with the current TOPCon cells. Our results highlight that further cost reductions in single-sided doped poly -Si layers are needed to compete with mainstream passivated emitter and rear cell, and TOPCon technologies.

14 SOLAR ENERGY↗
NASA NTRS1982

New component development for multi-100 kW low-cost solar array applications

Studies of the cost and performance of flexible arrays have shown that the most dramatic reductions in the $/Watt figure of merit are achieved by increasing performance. An examination of those properties that contribute to array performance indicated areas where radical changes in current design practice and philosophy would result in significant cost and performance impacts. To take advantage of the predicted cost reductions, modules were fabricated and tested that had ultra-thin superstrates as a load carrying member and large area dielectric wraparound (DWA), gridded back surface and copper contacted solar cells.

Pack, G. J.↗
NASA NTRS2001

Silicon Carbide Solar Cells Investigated

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Bailey, Sheila G.↗
NASA NTRS1982

Large area low-cost space solar cell development

A development program to produce 5.9 x 5.9 cm space quality silicon solar cells with a cost goal of 30 $/W is described. Cell types investigated include wraparound dielectric, mechanical wraparound and conventional contact configurations with combinations of 2 or 10 ohm/cm resistivity, back surface reflectors and/or fields, and diffused or ion implanted junctions. A single step process to cut cell and cover glass simultaneously is being developed. Results for cell and array tests are given. Large solar arrays that might use cells of this type are discussed.

Barona, C. R.↗
NASA NTRS1982

Annual Conference on Nuclear and Space Radiation Effects, 19th, Las Vegas, NV, July 20-22, 1982, Proceedings

The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.

Long, D. M.↗
NASA NTRS1979

Materials and techniques for spacecraft static charge control 2

Results of exploratory development on the design, fabrication and testing of transparent conductive coatings, conductive bulk materials and grounding techniques for application to high resistivity spacecraft dielectric materials to obtain control of static charge buildup are presented. Deposition techniques for application of indium oxide, indium/tin oxide and other metal oxide films on Kapton, FEP Teflon, OSR and solar cell coverglasses discussed include RF and Magnetron sputtering and vapor deposition. Development, fabrication and testing of conductive glass tiles for OSR and solar cell coverglass applications is discussed. Several grounding techniques for rapid charge dissipation from the conductively coated polymer and glass dielectrics which were developed and tested in thermal cycled and electron plasma environments are described. The optical and electrical characterization and aging effects of these coatings, bulk materials and grounding techniques are reviewed as they apply to the performance of their design functions in a geosynchronous orbit environment.

Schmidt, R. E.↗