Search NASA⌕ Search

SEARCH · Search NASA

Results for “dielectric solar cell”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Characterization of ASEC BSR 2 ohm-cm silicon solar cells with dielectric wraparound contacts as a function of temperature and intensity

Twenty high performance BSR 2 ohm-cm silicon solar cells manufactured by ASEC were evaluated at 1 AU conditions and at low temperature and low intensities representative of deep space. These cells showed evidence of series resistance of 1 AU conditions and approximately 50% had reduced power outputs under deep space conditions. Average efficiency of these cells was 12.4% of 1 AU conditions of 1 SC/+25 C.

Whitaker, A. F.↗
NASA NTRS1992

The arcing rate for a High Voltage Solar Array - Theory, experiment and predictions

All solar arrays have biased surfaces which can be exposed to the space environment. It has been observed that when the array bias is less than a few hundred volts negative then the exposed conductive surfaces may undergo arcing in the space plasma. A theory for arcing is developed on these high voltage solar arrays which ascribes the arcing to electric field runaway at the interface of the plasma, conductor and solar cell dielectric. Experiments were conducted in the laboratory for the High Voltage Solar Array (HVSA) experiment which will fly on the Japanese Space Flyer Unit (SFU) in 1994. The theory was compared in detail to the experiment and shown to give a reasonable explanation for the data. The combined theory and ground experiments were then used to develop predictions for the SFU flight.

Hastings, Daniel E.↗
NASA NTRS1992

Arcing rates for High Voltage Solar Arrays - Theory, experiment, and predictions

All solar arrays have biased surfaces that can be exposed to the space environment. It has been observed that when the array bias is less than a few hundred volts negative, then the exposed conductive surfaces may undergo arcing in the space plasma. A theory for arcing is developed on these high voltage solar arrays that ascribes the arcing to electric field runaway at the interface of the plasma, conductor, and solar cell dielectric. Experiments were conducted in the laboratory for the High Voltage Solar Array experiment that will fly on the Japanese Space Flyer Unit (SFU) in 1994. The theory was compared in detail with the experiment and shown to give a reasonable explanation for the data. The combined theory and ground experiments were then used to develop predictions for the SFU flight.

Hastings, Daniel E.↗
NASA NTRS1972

Design and fabrication of wraparound contact silicon solar cells

Both dielectric insulation and etched junction contact techniques were evaluated for use in wraparound contact cell fabrication. Since a suitable process for depositing the dielectrics was not achieved, the latter approach was taken. The relationship between loss of back contact and power degradation due to increased series resistance was established and used to design a simple contact configuration for 10 ohm-cm etched wraparound junction contact N/P cells. A slightly deeper junction significantly improved cell curve shape and the associated loss of current was regained by using thinner contact grid fingers. One thousand cells with efficiencies greater than 10.5% were fabricated to demonstrate the process.

Scott-Monck, J. A.↗
DOE OSTI2021

Effective Dielectric Passivation Scheme in Area-Selective Front/Back Poly-Si/SiOx Passivating Contact Solar Cells

Explored different dielectric passivation schemes on lifetime samples after removing poly-Si completely. Showed that SiNx/Al2O3 had the best passivation properties on SiOx/n+ c-Si in diffused surface. Applied SiNx/Al2O3 stack on poly-Si/SiOx passivating contact device and showed large improvement in Jsc, with best device efficiency of 21.8%. Future work: CV measurement of dielectric stacks to obtain Qf and Dit.

dielectric↗
NASA NTRS1972

Integrally covered silicon solar cells.

The electron-beam technique for evaporating dielectric materials onto solar cells has been examined and developed. Titanium oxide cell antireflection coatings have been obtained which compare to silicon monoxide in environmental capabilities and which provide 3 to 4% improvement over SiO for glass covered cells. Evaporation processes have been obtained which provide a 50 to 100 micromil thick transparent (0.5 to 1.0% absorption per mil), low stressed integral cover capable of surviving space type qualification testing. Irradiation with 10 to the 15th power 1-MeV electrons shows 2% darkening, and long term UV irradiation incurs approximately 1.3% cover darkening for 50 micromil thick covers.

Stella, P. M.↗
NASA NTRS1971

Development of integral covers on solar cells

The electron-beam technique for evaporating a dielectric material onto solar cells is investigated. A process has been developed which will provide a highly transparent, low stress, 2 mil thick cover capable of withstanding conventional space type qualification tests including humidity, thermal shock, and thermal cycling. The covers have demonstrated the ability to withstand 10 to the 15th power 1 MeV electrons and UV irradiation with minor darkening. Investigation of the cell AR coating has produced a space qualifiable titanium oxide coating which will give an additional 6% current output over similar silicon oxide coated cells when covered by glass.

Stella, P.↗
DOE OSTI2023

Loss Analysis and Performance Optimization Pathways of 729-mV Voc Si Solar Cells with Poly-Si on Locally-Etched Dielectric Passivating Contacts

In this article, the loss analysis of silicon solar cells with polysilicon on locally-etched dielectric passivating contacts with Voc=729.0 mV and efficiency=22.6% has been presented. Experimentally, nano-pinholes were introduced in SiO x (2.2 nm) and SiO x /SiN y (2.2 nm/8nm) stack using metal-assisted chemical etching (MACE). SunSolve and Quokka3 were used to simulate the experimental solar cell and investigate the optical and electrical power losses. Simulations suggest maximum power loss occurs due to recombination and resistive losses in the bulk (~0.76 mW/cm2) followed by power loss due to rear contact recombination (~0.35 mW/cm2). Recombination at the front surface also contributes to 0.24 mW/cm2. The effect of improving the bulk lifetime and lowering the recombination current density at the rear side on Voc, FF and hence, efficiency has been investigated. Further, advanced structures have been proposed to minimize recombination and parasitic absorption to achieve higher Voc and Jsc of the solar cells with locally-etched dielectric passivating contacts.

contacts↗
DOE OSTI2022

Room Temperature, Dip Coating Organic Passivation for c-Si Surfaces

Surface passivation of crystalline Si (c-Si) to reduce recombination rate is crucial to obtain high-efficiency c-Si solar cells. A fast passivation technique that can be performed at room temperature is needed when studying the degradation behaviors using various characterization methods to not destroy the degraded states. In this contribution, we explore Nafion via dip coating on n-type Cz wafers. We show that both the Nafion concentration and the conditions of surface and edge affect the passivation quality, and we achieve excellent passivation quality of iVoc of 716 mV, with a saturation current density (J0) of 7 fA/cm2. Additionally, electron paramagnetic resonance (EPR) shows Nafion can be used under cryogenic temperature and reveals the reduction of Si dangling bond after Nafion treatment.

dielectric solar cell↗
NASA NTRS1982

Improved thermophotovoltaic power system

Improvements in thermophotovoltaic (TPV) system design to ease the geometry and performance requirements are discussed. A TPV system usually consists of a receiver cavity lined with reflective materials and Si solar cells. A suspended central absorber/radiator converter absorbs solar energy and heats to an equilibrium temperature of 2000-23,000 K. Radiant heat at that temperature is well matched to Si solar cell low energy excitation. An elliptical geometry cavity is described which bypasses normal cell mounting problems by having the cells fixed to a plate positioned between the loci of the cavity. Incoming concentrated solar flux is absorbed by the absorber/radiator, which emits the radiation for reflection from the cavity walls to eventually pass through the solar cell wall. Dielectric stack coatings can be used on the walls. A theoretical model was developed for the performance and verified with a laboratory apparatus. Efficiencies of nearly 30% were found practical with existing materials and technologies.

Horne, W. E.↗
NASA NTRS1998

Obtaining Solutions to Radiation-And Plasma Induced FAilure Modes From Physics

A number of performance-limiting spacecraft problems will be qualitatively discussed: Spacecraft Charging, Deep Dielectric Charging, Solar Cell Arcing, Antenna Sparking, High Voltage Power Shorts, Radiation-induced Defects in Semiconductors, and Degradation of Electronic Devices.

Radiation Plasma Arcing high voltage static charge↗
NASA NTRS1991

Optimization and performance of Space Station Freedom solar cells

High efficiency, large area and low cost solar cells are the drivers for Space Station solar array designs. The manufacturing throughput, process complexity, yield of the cells, and array manufacturing technique determine the economics of the solar array design. The cell efficiency optimization of large area (8 x 8 m), dielectric wrapthrough contact solar cells are described. The results of the optimization are reported and the solar cell performance of limited production runs is reported.

Khemthong, S.↗
NASA NTRS1981

Pilot production and testing of high efficiency wraparound contact solar cells

Modifications were made to the process sequence until a device capable of high performance and satisfactory processing yields could be fabricated on a production line. Pilot production resulted in a 2 x 4 cm screen printed dielectric wraparound contact solar cell with average 28 C, Air Mass Zero (AMO) conversion efficiencies of 14.2% and reasonable process yields. This high performance was obtained with two different back contact configurations, making the device acceptable for many applications.

Gillanders, M.↗
DOE OSTI2023

Loss Analysis and Performance Optimization Pathways of 729-mV VocSi Solar Cells with Poly-Si on Locally-Etched Dielectric Passivating Contacts

In this article, the performance analysis of a 22.5% efficient polysilicon on silicon oxide (poly-Si/SiOx) passivated contact solar cells with deliberately introduced pinholes using metal-assisted chemical etching (MACE) has been performed with the help of optical analysis using Sunsolve and electrical analysis using Quokka3. The power loss is maximum due to recombination and resistive losses in the bulk (~0.76 mW/cm2 ) followed by power loss due to rear contact recombination (~0.35 mW/cm2 ). Recombination at the front surface also contributes to 0.24 mW/cm2. The effect of improving the bulk lifetime and lowering the recombination current density at the rear side on Voc, FF and efficiency has been investigated.

MACE↗
DOE OSTI2020

On the hydrogenation of Poly-Si passivating contacts by Al 2 O 3 and SiN x thin films

Doped polycrystalline silicon (poly-Si), when coupled with a thin SiO 2 interlayer, is of large interest for crystalline silicon ( c -Si) solar cells due to its outstanding passivating contact properties. To reach high levels of surface passivation, it is pivotal to hydrogenate the poly-Si and the underlying c -Si/SiO 2 interface. This can be done by capping the poly-Si with a hydrogen-containing dielectric layer such as Al 2 O 3 or SiN x , followed by a thermal anneal. On the basis of recent research, this work addresses several aspects of such hydrogenation by dielectric materials, including the effect of the annealing ambient, the thermal stability and reversibility of hydrogenation, the poly-Si doping level and c -Si surface texture. Additionally, the implementation of hydrogenation of poly-Si by dielectric materials in solar cells is discussed.

14 SOLAR ENERGY↗
NASA NTRS1975

Properties of conductive coatings for thermal control mirrors and solar cell covers

Conductive transparent coatings applied to the dielectric surfaces of a spacecraft offer the possibility of distributing charge uniformly over the entire spacecraft surface. Optical and electrical measurements of such a coating as a function of temperature are described. These results are used in considering the impact of a conductive coating on the absorptance of thermal control mirrors and on the transmittance of solar cell cover glass, which can be improved by the application of an antireflection coating.

Joslin, D. E.↗