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At least 37 records · Page 2

Stability of the Martian atmosphere: Is heterogeneous catalysis essential?

A comprehensive homogeneous gas phase photochemical model is developed to study the problem of stability of the Martian atmosphere. The one-dimensional model extends from the ground up to 220 km, passing through the homopause at 125 km. The model thus couples the lower (neutral) atmosphere to the ionosphere above which provides significant downward flux of carbon monoxide and oxygen atoms. It is concluded on the basic of currently accepted values for globally and seasonally averaged water vapor abundance, dust opacity and the middle atmospheric eddy mixing coefficient, as well as the relevant laboratory data (particularly the temperature dependence of CO2 absorption cross section and the rate constant for CO+OH reaction), that the rate of re-formation of carbon dioxide exceeds its photolytic destruction rate by about 40%. Furthermore, it is found that this result is virtually independent of the choice of eddy mixing coefficient, unless its value in the middle atmosphere exceeds 10(exp 8) sq cm/sec or is far smaller than 10(exp 5)sq cm/sec, or the dust opacity, unless it exceeds unity, or the water vapor mixing ratio at the surface, unless it is far smaller (less than or = 1 ppm) or far greater (greater than or = 500 ppm) than the average value (approximately 150 ppm). Since none of these extremes represent globally and seasonally averaged conditions on Mars, we propose that the present model requires existence of a mechanism to throttle down the recycling rate of carbon dioxide on Mars. Therefore, it is suggested that a heterogeneous process which provides a sink to the species that participate in the recycling of CO2, i.e., H2O, H2O2, OH, CO or O, in particular, may be necessary to bring about the balance between the CO2 recycling rate and its photolytic destruction rate. Aerosols of dust or ice (pure or doped water or carbon dioxide ice present in the atmosphere of Mars) can provide the appropriate adsorption sites for the above heterogeneous process. Despite our conclusion that some heterogeneous process may be needed, it is important to recognize that one-dimensional models can only provide first-order results which, most likely, represent globally and seasonally averaged conditions. However, it is only after actual temporal, latitudinal and longitudinal variations of relevant atmospheric parameters are included in the model that one can determine fuly whether the problem of atmospheric stabiltiy still continues to persist and whether some heterogeneous process is required to correct it.

Atreya, Sushil K.↗

Preparation of Proton Exchange Membranes and Lithium Batteries from Melamine-containing Ormosils

Our laboratory has recently reported a series of rodcoil polymers for lithium batteries that display dimensionally stable films with good ionic conductivity. The rod segments consist of rigid linear and branched polyimides and the coil segments are polyethylene oxides (PEO). It has been proposed that good mechanical and transport properties are due to phase separation between the rod and coil segments. It was also observed that increased branching and molecular weight lead to increased conductivity. The following study was undertaken to assess the effects of phase separation in polyalkylene oxides connected by melamine linkages. Melamine was chosen as the linking unit because it provides a branching site, cation binding sites to help ionic transport between polymer chains, and the opportunity for self assembly through hydrogen bonding. Polymers were made by the reaction of cyanuric chloride with a series of amine-terminated alkylene oxides. A linear polymer was first made, followed by reaction of the third site on cyanuric chloride with varying ratios of monofunctional Jeffamine and (3-aminopropyl)triethoxysilane. The lithium trifluoromethane sulfonamide-doped polymers are then crosslinked through a sol-gel process to form free-standing films. Initial results have shown mechanically strong films with lithium conductivities on the order of 2 x 10(exp -5) S/cm at ambient temperature. In a separate study, organically modified silanes (Ormosils) that contain sulfonic acid derivatized melamines have been incorporated into proton exchange membranes. The membranes are made by reaction of the primary amine groups of various ratios of melamine derivative and difunctional Jeffamine (MW = 2000) with the epoxide group of (3-Glycidyloxypropyl)trimethoxysilane. The films were then cross-linked through a sol-gel process. Resulting sulfuric acid doped films are strong, flexible, and have proton conductivities on the order of 2 x l0(exp -2) S/cm (120 C, 25% relative humidity). Our best results have been observed when films contain 60% PEO and 40% sulfonated melamine.

Tigelaar, Dean M.↗

Microstructure and magnetization of doped Y-Ba-Ca-O materials prepared by melt quench and post annealing method

Y-Ba-Cu-O bulk materials prepared using the melt quench and post annealing method were shown to have very high maximum as well as remanent magnetization. Studies were carried out on materials prepared using this method which deviate from the Y:Ba:Cu = 1:2:3 stoichiometry. In one series of materials, only the stoichiometry was changed, in particular by introducing an excess of yttrium. In other cases, dopants including several rare earths were introduced. Effects of variations in composition on microstructure and phase evolution are discussed, as well as effects on the magnetic susceptibility and on the magnetization. The results show that doped materials can exhibit improvements in magnetic properties. Furthermore, the use of dopants sheds light on the role of defect sites in flux pinning.

Hojaji, H.↗

Dopant Incorporation Efficiency in CVD Silicon Carbide Epilayers

In order to ensure reproducible and reliable SiC semiconductor device characteristics, controlled dopant incorporation must be accomplished. Some of the many factors which greatly influence dopant incorporation are the site-competition effect, SiC(0001) substrate polarity, substrate temperature, and the dopant-source reactor concentration. In this paper, dopant incorporation is considered and compared for various dopants in the context of dopant incorporation efficiency. By using secondary ion mass spectrometry (SIMS), the relative dopant incorporation efficiencies were calculated by dividing the SIMS determined dopant concentration in the resulting epitaxial layer by the intentional gas phase dopant concentration used during the SiC CVD. Specifically, the relative magnitudes of dopant incorporation efficiencies for nitrogen, phosphorus, and boron in 6H-SiC (0001) Si-face epitaxial layers are compared as a function of the site-competition effect and the dopant-source reactor concentrations. This serves as a first approximation for comparison of the relative 'doping potencies' of some common dopants used in SiC CVD epitaxial growth.

Larkin, D. J.↗

Mode of incorporation of phosphorus in Hg(0.8)Cd(0.2)Te

Selim and Kroeger (1977) have studied the mode of incorporation of phosphorus in CdTe. According to their findings, phosphorus behaves amphoterically in CdTe acting as an acceptor interstitially and on Te lattice sites, and as a triple donor on Cd lattice sites. The present investigation is concerned with the role of phosphorus in Hg(0.8)Cd(0.2)Te, taking into account Hall-effect and mobility measurements on phosphorus-doped crystals quenched from a temperature in the range from 450 to 600 C subsequent to anneals in different partial pressures of Hg. It is found that the behavior of phosphorus in Hg(0.8)Cd(0.2)Te is similar to that established for CdTe, except that all the electrically active phosphorus defect centers in Hg(0.8)Cd(0.2)Te appear to be only singly ionized. At low Hg pressure, phosphorus is incorporated as a single donor occupying Hg lattice sites, and at high Hg pressure, as a single acceptor on interstitial sites and Te lattice sites.

Vydyanath, H. R.↗

Optical Experiments With Manganese Doped Yttrium Orthoaluminate, a Potential Material for Holographic Recording and Data Storage

The YAlO3 host crystal has a distorted perovskite structure that belongs to the orthorhombic centrosymmetric Pbnm space group. The cationic sites in the structure available for Mn substitution are the relatively large strongly distorted YO12 polyhedral (Y3+ ionic radius R(sub Y) = 1.02 A) and the smaller nearly ideal AlO6 octahedra R(sub Al) = 0.53 A). Manganese may enter YAlO3 in the form of Mn2+ ions (R(sub Mn)= 0.96 A), substituting most likely Y3+ ions, and Mn3+ ions (R(sub Mn) = 0.65 A) or Mn4+ ions (R(sub Mn) = 0.53 A) substituting Al3+ ions. The latter substitution is most probable because of dimensional parameters. Point defects, which are common in YAl03, may provide the charge compensation required for substitution.

Warren, Matthew E.↗

Tetravalent chromium doped laser materials and NIR tunable lasers

A method is described to improve and produce purer Cr.sup.4+-doped laser materials and lasers with reduced co-incorporation of chromium in any other valence states, such as Cr.sup.3+, Cr.sup.2+, Cr.sup.5+, and Cr.sup.6+. The method includes: 1) certain crystals of olivine structure with large cation (Ca) in octahedral sites such as Cr.sup.4+:Ca.sub.2GeO.sub.4, Cr.sup.4+:Ca.sub.2SiO.sub.4, Cr.sup.4+:Ca.sub.2Ge.sub.xSi.sub.1-xO.sub.4 (where 0<x<1), and/or 2) high-temperature solution growth techniques that enable the growth of the crystals below the temperature of polymorphic transitions by using low melting point solvent based on oxide, fluoride and/or chloride compounds. Purer Cr.sup.4+-doped laser materials are characterized by a relatively high concentration of Cr.sup.4+-lasing ion in crystalline host that makes these materials suitable for compact high power (thin disk/wedge) NIR laser applications.

Alfano, Robert R.↗

Study of the thermal degradation mechanism of a composite propellant

The current experimental program was designed to systematically investigate the role of the oxidizer in the thermal degradation process of composite propellants. The scanning electron microscope (SEM) was used to examine the failure sites in thermally degraded propellant samples. The formulation variables tested were oxidizer purity, oxidizer particle size, and oxidizer to binder bonding agent. The binder, a saturated hydrocarbon, was kept constant throughout the experiments. The oxidizers were: AP, chlorate-doped AP, arsenate-doped AP, and phosphate-doped AP. The oxidizer particle size distribution was 60% of the large fraction and 40% of the small fraction. The bonding agent, when present, was used at the 0.15% level. The data showed that both the oxidizer purity and particle size had an important affect on the thermal degradation process. The affect of the oxidizer particle size was more noticeable at the higher temperature and stress levels. An examination of the failure site, by SEM, of propellants subject to these latter conditions indicated that the fracturing of the large oxidizer particles led to the propellant cracking.

Schmidt, W. G.↗

Defect chemistry and characterization of (Hg, Cd)Te

Single crystal samples of phosphorus doped Hg sub 0.8 Cd sub 0.2 Te were anneald at temperatures varying from 450 C to 600 C in various Hg atmospheres. The samples were quenched to room temperature from the annealing temperatures. Hall effect and mobility measurements were performed at 77 K on all these samples. The results indicate the crystals to be p type for a total phosphorus concentration of 10 to the 19th power/cu cm in all the samples. The hole concentration at 77 K increases with increasing Hg pressures at 450 C and 500 C contrary to the observation in undoped crystals. Also, at low Hg pressures the concentration of holes in the phosphorus doped crystals is lower than in the undoped crystals. The hole concentration in all the samples is lower than the intrinsic carrier concentration at the annealing temperatures. The hole mobility in the doped crystals is similar to that in the undoped crystals. A defect model according to which phosphorus behaves as a single acceptor interstitially, occupying Te lattice sites while it acts as a single donor occupying Hg lattice sites was established. Equilibrum constants established for the incorporation of all the phosphorus species explain the experimental results

Vydyanath, H. R.↗

The importance of environmental conditions in reflectance spectroscopy of laboratory analogs for Mars surface materials

Reflectance spectra are presented here for a variety of particulate, ferric-containing analogs to Martian soil (Fe(3+)-doped smectites and palagonites) to facilitate interpretation of remotely acquired spectra. The analog spectra were measured under differing environmental conditions to evaluate the influence of exposure history on water content and absorption features due to H2O in these samples. Each of these materials contains structural OH bonded to metal cations, adsorbed H2O, and bound H2O (either in a glass, structural site, or bound to a cation). Previous experiments involving a variety of Mars analogs have shown that the 3 micron H2O band in spectra of palagonites is more resistant to drying than the 3 micron H2O band in spectra of montmorillonites. Other experiments have shown that spectra of ferrihydrite and montmorillonites doped with ferric sulfate also contain sufficient bound H2O to retain a strong 3 micron band under dry conditions. Once the effects of the environment on bound water in clays, oxides, and salts are better understood, the hydration bands measured via reflectance spectroscopy can be used to gain information about the chemical composition and moisture content of real soil systems. Such information would be especially useful in interpreting observations of Mars where subtle spatial variations in the strengths of metal-OH and H2O absorptions have been observed in telescopic and ISM spectra. We measured bidirectional reflectance spectra of several Mars soil analogs under controlled environmental conditions to assess the effects of moisture content on the metal-OH and H2O absorptions. The samples analyzed include chemically altered montmorillonites, ferrihydrite. and palagonites from Hawaii and Iceland. Procedures for preparation of the cation-exchanged montmorillonites, ferric-salt doped montmorillonites, and ferric oxyhydroxides are described in detail elsewhere.

Bishop, J.↗

Fabrication and Modification of Nanoporous Silicon Particles

Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion etching (RIE), may be applied to make the surface rough. This helps remove the nucleation layer. A protective layer is then deposited on the wafer. The protective layer, such as silicon nitride film or photoresist film, protects the wafer from electrochemical etching in an HF-based solution. A lithography technique is applied to pattern the particles onto the protective film. The undesired area of the protective film is removed, and the protective film on the back side of the wafer is also removed. Then the pattern is exposed to HF/surfactant solution, and a larger DC electrical current is applied to the wafers for a selected time. This step removes the nucleation layer. Then a DC current is applied to generate the nanopores. Next, a large electrical current is applied to generate a release layer. The particles are mechanically suspended in the solvent and collected by filtration or centrifuge.

Ferrari, Mauro↗

RESOLVE 2010 Field Test

This slide presentation reviews the field tests conducted in 2010 of the Regolith Environment Science & Oxygen & Lunar Volatile Extraction (RESOLVE). The Resolve program consist of several mechanism: (1) Excavation and Bulk Regolith Characterization (EBRC) which is designed to act as a drill and crusher, (2) Regolith Volatiles Characterization (RVC) which is a reactor and does gas analysis,(3) Lunar Water Resources Demonstration (LWRD) which is a fluid system, water and hydrogen capture device and (4) the Rover. The scientific goal of this test is to demonstrate evolution of low levels of hydrogen and water as a function of temperature. The Engineering goals of this test are to demonstrate:(1) Integration onto new rover (2) Miniaturization of electronics rack (3) Operation from battery packs (elimination of generator) (4) Remote command/control and (5) Operation while roving. Views of the 2008 and the 2010 mechanisms, a overhead view of the mission path, a view of the terrain, the two drill sites, and a graphic of the Master Events Controller Graphical User Interface (MEC GUI) are shown. There are descriptions of the Gas chromatography (GC), the operational procedure, water and hydrogen doping of tephra. There is also a review of some of the results, and future direction for research and tests.

Captain, J.↗

Effect of dopants on annealing performance of silicon solar cells

The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.

Scott-Monck, J. A.↗

Compound semi-conductors and controlled doping thereof

A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.

Larkin, David J.↗

Electronic state and superconductivity of YBa2Cu3-xO7-y (M=Al,Zn and Sn) systems

A series of YBa2Cu(3-x)MxO(7-y) (M=Al,Zn and Sn) single phase samples were prepared, and the measurements of the crystal structure, oxygen content, electric resistivity, thermoelectric power, Mossbauer spectrum, XPS and superconductivity were performed. The experimental results of X ray powder diffraction, Mossbauer spectrum and oxygen content show that the Zn(2+) and the Al(3+) occupy the Cu(2) site in Cu-O planes and the Cu(1) site in Cu-O chains respectively, but the Sn(4+) occupies both the Cu(1) sites. As regards the properties in superconducting state, both the Zn(2+) and the Al(3+) depress T(sub c) strongly, but the Sn(4+) does not. As for the electronic transport properties in normal state, the system doped by Al(3+) displays a rapid increase of resistivity and some electron localization-like effects, and the thermoelectric power enhances obviously; the series contained Zn(2+) almost shows no changes of electric resistivity but the sign of the thermoelectric power is reversed. Other results are given and briefly discussed.

Zhao, Y.↗

Analyses of Transistor Punchthrough Failures

The failure of two transistors in the Altitude Switch Assembly for the Solid Rocket Booster followed by two additional failures a year later presented a challenge to failure analysts. These devices had successfully worked for many years on numerous missions. There was no history of failures with this type of device. Extensive checks of the test procedures gave no indication for a source of the cause. The devices were manufactured more than twenty years ago and failure information on this lot date code was not readily available. External visual exam, radiography, PEID, and leak testing were performed with nominal results Electrical testing indicated nearly identical base-emitter and base-collector characteristics (both forward and reverse) with a low resistance short emitter to collector. These characteristics are indicative of a classic failure mechanism called punchthrough. In failure analysis punchthrough refers to an condition where a relatively low voltage pulse causes the device to conduct very hard producing localized areas of thermal runaway or "hot spots". At one or more of these hot spots, the excessive currents melt the silicon. Heavily doped emitter material diffuses through the base region to the collector forming a diffusion pipe shorting the emitter to base to collector. Upon cooling, an alloy junction forms between the pipe and the base region. Generally, the hot spot (punch-through site) is under the bond and no surface artifact is visible. The devices were delidded and the internal structures were examined microscopically. The gold emitter lead was melted on one device, but others had anomalies in the metallization around the in-tact emitter bonds. The SEM examination confirmed some anomalies to be cosmetic defects while other anomalies were artifacts of the punchthrough site. Subsequent to these analyses, the contractor determined that some irregular testing procedures occurred at the time of the failures heretofore unreported. These testing irregularities involved the use of a breakout box and were the likely cause of the failures. There was no evidence to suggest a generic failure mechanism was responsible for the failure of these transistors.

Nicolas, David P.↗

Fe-57 and Sn-119 Moessbauer study of La2CuO(4-y), YBa2Cu3O(7-y) and SmBa2Cu3O(7-y)

Moessbauer studies reveal antiferromagnetic order in doped La2CuO(4-7): at 77 K, H = 476 kOe at Fe-57 and H is less that 10 kOe at Sn-119. Split-source and conventional absorber experiments on RBa2Cu3O(7-y) (R = Y, Sm) are consistent with occupation of 3 sites by Fe-57, the relative population depending on sample preparation and Fe concentration.

Jha, S.↗

Metastable defects in Be-doped Al(x)Ga(1-x)As

Deep-level transient spectroscopy has been used to study metastable defects in Be-doped Al(x)Ga(1-x)As grown by molecular-beam epitaxy. The metastability manifests itself by the appearance of different spectra depending upon whether the sample is cooled from a high temperature with zero bias or a reverse bias applied to it. The defects are found in concentrations of 10 to the 15th/cu cm in a sample doped with 10 to the 18th Be/cu cm and in much lower concentrations in a 10 to the 17th Be/cu cm sample. Isochronal annealing experiments indicate that the defect is multistable and that it is best modeled as a mobile interstitial which can reside at several sites near acceptor. The activation energies for these defects are between 0.2 and 0.5 eV above the valence band.

Magno, R.↗