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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

High-Temperature Ferroelectric Behavior of Al 0.7 Sc 0.3 N

Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures > 200 °C. While ferroelectric NVM has previously demonstrated long polarization retention and >10 13 read/write cycles at room temperature, the largest hurdle comes at higher temperatures for conventional perovskite ferroelectrics. Here, we demonstrate how AlScN can enable high-temperature (>200 °C) nonvolatile memory. The c-axis textured thin films were prepared via reactive radiofrequency magnetron sputtering onto a highly textured Pt (111) surface. Photolithographically defined Pt top electrodes completed the capacitor stack, which was tested in a high temperature vacuum probe station up to 400 °C. Polarization–electric field hysteresis loops between 23 and 400 °C reveal minimal changes in the remanent polarization values, while the coercive field decreased from 4.3 MV/cm to 2.6 MV/cm. Even at 400 °C, the polarization retention exhibited negligible loss for up to 1000 s, demonstrating promise for potential nonvolatile memory capable of high–temperature operation. Fatigue behavior also showed a moderate dependence on operating temperature, but the mechanisms of degradation require additional study.

36 MATERIALS SCIENCE↗
NASA NTRS1982

Study of the photovoltaic effect in thin film barium titanate

Ferroelectric films of barium titanate were synthesized on silicon and quartz substrates, and the photoelectric effect in the structure consisting of metal deposited ferroelectric barium titanate film silicon was studied. A photovoltage with polarity that depends on the direction of the remanent polarization was observed. The deposition of BaTiO3 on silicon and fused quartz substrates was accomplished by an rf sputtering technique. A series of experiments to study the growth of ferroelectric BaTiO3 films on single crystal silicon and fused quartz substrates were conducted. The ferroelectric character in these films was found on the basis of evidence from the polarization electric field hysteresis loops, capacitance voltage and capacitance temperature techniques and from X-ray diffraction studies.

Grannemann, W. W.↗
DOE OSTI2023

Effective Landau-type model of a Hf x Zr 1 - x O 2 -graphene nanostructure

Here, to describe the charge-polarization coupling in the nanostructure formed by a thin Hf x Zr 1-x O 2 film with a single-layer graphene as a top electrode, we develop the “effective” Landau-Ginzburg-Devonshire model. This approach is based on the parametrization of the Landau expansion coefficients for the polar (FE) and antipolar (AFE) orderings in thin Hf 1-x Zr x O 2 films from a limited number of polarization-field curves and hysteresis loops. The Landau expansion coefficients are nonlinearly dependent on the film thickness h and Zr/[Hf+Zr] ratio x, in contrast to h-independent and linearly x-dependent expansion coefficients of a classical Landau energy. We explain the dependence of the Landau expansion coefficients by the strong nonmonotonic dependence of the Hf 1-x Zr x O 2 film polar properties on the film thickness, grain size and surface energy. The proposed Landau free energy with five “effective” expansion coefficients, which are interpolation functions of x and h, describes the continuous transformation of polarization dependences on applied electric field and hysteresis loop shapes induced by the changes of x and h in the range 0 < x < 1 and 5 nm < h < 35 nm. Using the effective free energy, we demonstrated that the polarization of Hf 1-x Zr x O 2 film influences strongly on the graphene conductivity, and the full correlation between the distribution of polarization and charge carriers in graphene is revealed. In accordance with our modeling, the polarization of the (5 – 25) nm thick Hf 1-x Zr x O 2 films, which are in the ferroelectric-like or antiferroelectric-like states for the chemical compositions 0.35 ≤ x ≤ 0.95, determine the concentration of carriers in graphene and can control its field dependence. The result can be promising for creation of next generation Si-compatible nonvolatile memories and graphene-ferroelectric FETs, because the working voltages applied to the Hf 1-x Zr x O 2 film (which acts as a gate) can be relatively low (less than 2 V). These low voltages are sufficient to induce the pronounced hysteresis of ferroelectric polarization in the Hf 1-x Zr x O 2 gate, which, due to the strong electric coupling, induces the hysteresis of the graphene charge.

36 MATERIALS SCIENCE↗
DOE OSTI2020

100th Anniversary of the discovery of Ferroelectricity: How did it impact the Current Day Physics

Ferroelectric phenomenon in materials was identified for the first time about 100 years ago in 1920 (paper presented at the American Physical Society (APS) Meeting in Washington, DC, April 1920), at the University of Minnesota, MN, USA; by then a graduate student Joseph Valasek working under the supervision of Prof. W. F. G. Swann. Before this announcement, some prominent physicists had envisaged and even predicted the possibility of an analogous electrical behavior in some materials to that of the well-established hysteresis behavior of magnetic materials. Debye’s work tried to put the concept of Curie temperature in some solids in 1912 but it Schrodinger in the same year who formalized the term ferroelectricity. The names ferroelectrics, ferroelectricity, etc. are fully symbolic of the hysteresis loop-like behavior originally displayed by the magnetic materials. Later on when the physics of ferroelectrics was formalized, most of the terminology, e.g. Curie constant, Curie temperature, etc. that characterized the hysteresis loop or its related characteristics, was inherited from the magnetic materials. Over the years basic ferroelectricity concepts were significantly developed. The observed ferroelectric hysteresis loop between electric polarization vs applied electric field in the then well-known material, Rochelle salt, was presented at the April meeting of the APS, held at, then known as, the National Bureau of Standards or NBS (currently known as the National Institute for Standards and Technology or NIST). Interestingly, even though Valasek submitted the abstract but it was presented by Swann (and Valasek was not present). It happened to be a unique case of the earlier predictions but it did not catch the attention of many researchers working in the field of electronics. Whatever the reason, there was a little attention paid to this newly identified effect in Rochelle salt in 1920s. In late 1920, Valasek’s paper was submitted to Physical Review and that appeared in April 1921. Both ferroelectricity and ferromagnetism are the observational or experimental characteristics of a special class of materials which were not predicted by any basic theoretical approaches to start with at that time.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The electric pulses induced multi-resistance states in the hysteresis temperature range of 1 T 2 and 1 T -TaS 1.6 Se 0.4

The electric pulse-induced responses of 1T-TaS 2 and 1T-TaS 1.6 Se 0.4 crystals in the commensurate charge-density-wave (CCDW) phase in the hysteresis temperature range have been investigated. We observed that abrupt multi-steps of the resistance are excited by electric pulses at a fixed temperature forming multi-metastable like states. Here, we propose that the response of the system corresponds to the rearrangements of the textures of CCDW domains and the multi-resistance states or the nonvolatile resistance properties excited simply by electric pulses have profound significance for the exploration of solid-state devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Chemical Compensation Challenges in Processing Antiferroelectric PbZrO 3 Thin Films

The electric field-induced antipolar-to-polar phase transition in antiferroelectric materials is accompanied by large changes in the structural and functional response, making them attractive for many applications ranging from pulsed energy capacitors to high-strain-high (blocking-)force actuators, solid-state heating and cooling systems, and optoelectronic devices. PbZrO 3 , as an end member of the PZT, (x)PbZr 1–x Ti x O 3 , solid solution, has been the subject of many studies. However, processing of perovskite PbZrO 3 is extremely challenging due to phase instabilities induced by Pb loss at the temperatures necessary for perovskite crystallization. Here, we discuss the challenges associated with Pb loss, as well as its compensation through bulk Pb overstoichiometry and interfacial PbO additions, in chemical solution processed, highly oriented PbZrO 3 thin films. For both 042 o - and 001 o -oriented (o-orthorhombic distortion) PbZrO 3 thin films, the crystallization interfaces are the most important contributors to Pb loss and off-stoichiometric outcomes, and no single approach was sufficient to address these challenges. Pb-rich and Pb-deficient nonperovskite phases including ZrO x were only observable through microscopic characterization, and X-ray diffraction alone could not rule out the presence of such secondary phases. “Ideal” macroscopic antiferroelectric polarization-electric field double hysteresis curves were observed despite (at times) the large presence of secondary phases. However, reduced saturation polarization and increased phase transition electric fields were observed concomitantly with the presence of secondary phase(s) and tentatively assigned to the voltage drop across the ZrO x nanocrystals. Based on these results, it is imperative that the presence of secondary phases always be addressed (beyond X-ray diffraction spectra) in order to correctly evaluate the properties of antiferroelectric films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Pressure-induced metallization and loss of surface magnetism in FeSi

Single-crystalline FeSi samples with a conducting surface state were studied under high pressure and magnetic field by means of electrical resistance measurements to explore how the bulk semiconducting state and the surface state are tuned by the application of pressure. Here, we found that the energy gap associated with the semiconducting bulk phase begins to close abruptly at a critical pressure of ~10 GPa and the bulk material becomes metallic with no obvious sign of any emergent phases or non-Fermi liquid behavior in temperature dependent electrical resistance in the neighborhood of the critical pressure above 3 K. Moreover, the metallic phase appears to remain at near-ambient pressure upon release of the pressure. Interestingly, the hysteresis in the electrical resistance vs magnetic field curve associated with the magnetically ordered conducting surface state decreases with pressure and vanishes at the critical pressure, while the slope of the electrical resistance vs magnetic field curve, which has a negative value for pressure below the critical pressure, decreases in magnitude with pressure and changes sign at the critical pressure. Thus the conducting surface state and the corresponding two-dimensional magnetic order collapse at the critical pressure where the energy gap of the bulk material starts to close abruptly, revealing the connection between the conducting surface state and the semiconducting bulk state in FeSi.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Magnetic testing

Magnetic techniques are described for the nondestructive evaluation of defects in materials. The physical principles, and the magnetic-particle method are discussed along with magnetic-hysteresis measurements and electric current perturbations.

Pasley, R. L.↗
NASA NTRS1996

The Dynamics of Ultrasonically Levitated Drops in an Electric Field

Ultrasonic and electrostatic levitation techniques have allowed the experimental investigation of the nonlinear oscillatory dynamics of free droplets with diameter between 0.1 and 0.4 cm. The measurement of the resonance frequencies of the first three normal modes of large amplitude shape oscillations in an electric field of varying magnitude has been carried out with and without surface charges for weakly conducting liquids in air. These oscillations of nonspherical levitated drops have been driven by either modulating the ultrasonic field or by using a time-varying electric field, and the free decay from the oscillatory state has been recorded. A decrease in the resonance frequency of the driven fundamental quadrupole mode has been measured for increasing oblate deformation in the absence of an electric field. Similarly, a decrease in this frequency has also been found for increasing DC electric field magnitude. A soft nonlinearity exists in the amplitude dependence of the resonant mode frequencies for freely decaying as well as ultrasonically and electrically driven uncharged drops. This decrease in resonance frequency is accentuated by the presence of free surface charge on the drop. Subharmonic resonance excitation has been observed for drops in a time-varying electric field, and hysteresis exists for resonant modes driven to large amplitude. Mode coupling from lower-order resonances to higher-order modes has been found to be very weak, even for fairly large amplitude shape oscillations. Most of these results are in general agreement with predictions from recent analytical and numerical investigations.

Trinh, E. H.↗
NASA NTRS1995

The Dynamics of Ultrasonically Levitated Drops in an Electric Field

Ultrasonic and electrostatic leviation techniques have allowed the experimental investigation of the nonlinear oscillatory dynamics of free droplets with diameter between 0.1 and 0.4 cm. The measurement of the resonance frequencies of the first three normal modes of large amplitude shape oscillations in an electric field of varying magnitude has been carried out with and without surface charges for weakly conducting liquids in air. These oscillations of nonspherical levitated drops have been driven by either modulating the ultrasonic field or by using a time-varying electric field, and the free decay from the oscillatory state has been recorded. A decrease in the resonance frequency of the driven fundamental quadrupole mode has been measured for increasing oblate deformation in the absence of an electric field. Similarly, a decrease in this frequency has also been found for increasing DC electric field magnitude. A soft nonlinearity exists in the amplitude dependence of the resonant mode frequencies for freely decaying as well as ultrasonically and electrically driven uncharged drops. This decrease in resonance frequency is accentuated by the presence of free surface charge on the drop. Subharmonic resonance excitation has been observed for drops in a time-varying electric field, and hysteresis exists for resonant modes driven to large amplitude. Mode coupling from lower-order resonances to higher-order modes has been found to be very weak, even for fairly large amplitude shape oscillations. Most of these results are in general agreement with predictions from recent analytical and numerical investigations.

Ultrasonically↗
NASA NTRS2010

Thin-Film Ferro Electric-Coupled Microstripline Phase Shifters With Reduced Device Hysteresis

This work deals with the performance of coupled microstripline phase shifters (CMPS) fabricated using BaxSr 1 -xTiO 3 (BST) ferroelectric thin films. The CMPS were fabricated using commercially available pulsed laser deposition BST films with Ba:Sr ratios of 30:70 and 20:80. Microwave characterization of these CMPS was performed at upper Kuband frequencies, particularly at frequencies near 16 and 18 GHz. X-ray diffraction studies indicate that the 30:70 films exhibit almost a 1:1 ratio between the in-plane and out-of-plane lattice parameters, suggesting that their cubics create strain -free films suitable for producing CMPS devices with reduced hysteresis in the paraelectric state. The quality of performance of the CMPS was studied based on their relative phase shift and insertion loss within the DC bias range of 0 to 400 V (i.e., E-field ranges within 0 to 53 V/micron). The performance of the CMPS was tested as a function of temperature to investigate their operation in the paraelectric, as well as in the ferroelectric, state (i.e., above and below the Curie temperature, respectively). The novel behavior discussed here is based on the experimental observation of the CMPS. This behavior, observed for the aforementioned cation ratio, highlights the relevance of good crystalline structure for high-quality CMPS.

Miranda, Felix A.↗
DOE OSTI2024

Ferroelectric Al1 − xBxN–GaN heterostructures

This report demonstrates Al0.93B0.7N thin films grown epitaxially on n-type GaN (0002)/c-plane sapphire substrates by reactive magnetron sputtering at 300 °C. At 200 nm film thickness, the Al0.93B0.07N layers exhibit partially relaxed substrate-induced epitaxial strain, a 0.16° wide (0002) rocking curve, in-plane crystallographic registry, and sub-nanometer surface roughness. Electrically, the stack shows robust hysteresis over three frequency decades, a remanent polarization of ∼125 μC/cm2, a strongly frequency dependent coercive field, highly uniform dc leakage currents, and endurance >106 field cycles. This report validates possibilities for ferroelectric nitride integration into conventional III-nitride heterostructures with high crystalline fidelity, high electrical resistivity, and persistent hysteresis. Such materials are synthesizable at thermal budgets and temperatures compatible with back-end-of-the-line boundary conditions.

Physics↗
DOE OSTI2025

Anodized Aluminum Oxide Membrane Ionic Memristors

Memory effect in ion transport (IT) at the solid–solution interface is uniquely attractive in that the conductance depends on or “memorizes” the previous states. Hysteretic and rectified transport properties offer exciting potential to developing advanced iontronics and neuromorphic functions, improving the efficiency of energy conversion and electrochemical processes, and overcoming the selectivity-throughput bottleneck in the enrichment of low abundant species for environment- and energy-friendly separations, among others. Herein, memory effects are discovered in the rectified electrokinetic IT through anodized aluminum oxide (AAO) membranes containing densely packed highly ordered nanochannels (10 10 per cm 2 ). Characteristic memristor responses of pinched current–potential loops are resolved in voltammetric experiments and successfully reproduced through finite element simulation. Excitatory and inhibitory conductance states are shown to arise from the enrichment and depletion of mobile charge carriers. Structurewise, the transport symmetry is broken by the barrier oxide layer (BOL) on the one end of the cylindrical nanochannels across the AAO membranes. Charge selectivity is attributed to the gradient(s) of the space charge density across the BOL characterized by depth profiling via X-ray photoelectron spectroscopy analysis. The space charge gradient(s) overcomes the fundamental limitation of widely exploited surface charge effects to enable intense rectification and hysteresis prevailing at very high ionic concentrations up to 1–2 M. A new strategy is developed for controlling the preferential IT direction and selectivity via counterion intercalation and extraction/exchange. Mechanistic understanding is further confirmed through parameter variations such as potential scan rate and ionic strength, which also demonstrates convenient controls of the related functions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Physical Mechanisms and Electric-Bias Control of Phase Transitions in Quasi-2D Charge-Density-Wave Quantum Materials

The goals of this fundamental science project, aimed at understanding the physical mechanisms and developing methods for electric-bias control of phase transitions in quasi-2D CDW materials, have been achieved. We focused on 1T-TaS2, one of the most interesting materials of this type, and demonstrated electrical gating of the I-V characteristics and hysteresis in this material. The demonstration of electrical gating of CDW phases in quasi-2D material was performed at RT. We have conducted experiments to separate the electric-field CDW switching from Joule heating-induced switching. This was an important development for 2D CDW materials. The project has led to a better understanding of the physical mechanisms behind the phase transitions and CDW depinning in quasi-2D van der Waals materials. We established that the CDW domain depinning in 1T-TaS2 does not lead to a strong increase in the collective current and accompanying narrow-band noise. We developed a technique that utilized the low-frequency noise measurements in such materials for monitoring the CDW phase transitions. In the experiments where 1T-TaS2 flakes were used in polymeric matrices, we verified the robustness of the phase transitions between the nearly commensurate and incommensurate CDW phases.

36 MATERIALS SCIENCE↗
DOE OSTI2022

In-Situ Sensing and Dynamics Predictions for Electrothermally-Actuated Soft Robot Limbs

Untethered soft robots that locomote using electrothermally-responsive materials like shape memory alloy (SMA) face challenging design constraints for sensing actuator states. At the same time, modeling of actuator behaviors faces steep challenges, even with available sensor data, due to complex electrical-thermal-mechanical interactions and hysteresis. This article proposes a framework for in-situ sensing and dynamics modeling of actuator states, particularly temperature of SMA wires, which is used to predict robot motions. A planar soft limb is developed, actuated by a pair of SMA coils, that includes compact and robust sensors for temperature and angular deflection. Data from these sensors are used to train a neural network-based on the long short-term memory (LSTM) architecture to model both unidirectional (single SMA) and bidirectional (both SMAs) motion. Predictions from the model demonstrate that data from the temperature sensor, combined with control inputs, allow for dynamics predictions over extraordinarily long open-loop timescales (10 min) with little drift. Prediction errors are on the order of the soft deflection sensor’s accuracy. This architecture allows for compact designs of electrothermally-actuated soft robots that include sensing sufficient for motion predictions, helping to bring these robots into practical application.

Sabelhaus, Andrew P.↗
NASA NTRS1982

Photovoltaic properties of ferroelectric BaTiO3 thin films RF sputter deposited on silicon

Ferroelectric thin films of BaTiO3 have been successfully deposited on n-type silicon substrates at temperatures above 500 C by RF sputtering in an O2/Ar atmosphere. Analysis by X-ray diffraction patterns show that films deposited at room temperature are amorphous. At temperatures above 500 C, crystalline BaTiO3 films with a tetragonal structure are obtained. The polarization-electric field (P-E) hysteresis loops and a broad peak in the dielectric constant versus temperature curve at Curie point indicate that the RF sputtered BaTiO3 films are ferroelectric. An anomalous photovoltaic effect is observed in these thin films which is related to the remanent polarization of the material. The results on open-circuit and short-circuit measurements provide an important basis for a better understanding of the role of photovoltaic field, photovoltaic current, and the pyroelectric properties in photoferroelectric domain switching.

Dharmadhikari, V. S.↗