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At least 37 records · Page 2

Imaging Electrons in Two Dimensional Materials (Final report)

Two-dimensional (2D) materials have extraordinary characteristics that offer promising new approaches for science and technology. Electrons in graphene can move ballistically through a sheet, even though it is only a single atom thick. And transition metal dichalcogenide materials can be cleaved into 2D flakes of all types – metals, semiconductors, insulators, magnetic materials, and superconductors. To benefit from these discoveries, the science needs to be understood to transform 2D materials into useful new devices and systems. The evolution in time of atomic scale graphene structures has been studied in time with a transmission electron microscope (TEM), and ballistic transport of electrons in graphene was been imaged using a cooled scanning probe microscope (SPM), as well as electron motion in MoS 2 . Graphene is only one atom thick but is extremely strong, creating the opportunity to fabricate atomic scale structures in the lateral direction. Using an atomic resolution TEM, a suspended sheet of graphene can be shaped by a Si impurity atom on its surface that acts like a chisel to open up apertures, one atom at a time. The electrons in the TEM provide both the chiseling energy and the ability to image the results. Electrons and holes in graphene form a new type of electronic system with conical conduction and valence bands that meet at the Dirac point, with no energy gap. For moderate densities, the carriers form a Fermi liquid with ballistic transport over micron-scale distances. Using a cooled SPM the cyclotron orbit of electrons in graphene has been imaged. In the magnetic focusing regime, electrons leaving a point contact circle around and leave from a second point contact when the cyclotron diameter is equal to the contact spacing. The paths of electrons are focused - they enter at different angles but converge again at the exiting contact. When the SPM tip knocks an electron out of its orbit, an imaging signal is created. The ballistic motion of carriers in graphene opens the way for ballistic devices that manipulate beams of electrons and holes. Our collaborator Gil-Ho Lee, in Philip Kim's group, created a collimating contact by placing zig-zag absorbers on either side of entering electrons. Our cooled SPM was used to image the electron beam and determine its 9-degree halfwidth. By changing the gate voltage, a collimated beam of holes was also created, opening the way for colliding beam experiments. Coherent beams of carriers are desirable for quantum information processing. Via Andreev reflection, superconducting contacts can covert Cooper pairs in a superconductor to an ingoing and outgoing electrons and holes. Using our cooled SPM, Andreev reflection was imaged from a superconducting contact on a graphene device. Magnetic focusing was used to create an incoming beam of electrons and an outgoing beam of holes, detected by a third point contact. The images show a clear transition from normal reflection above the superconducting transition temperature to Andreev reflection as the device is cooled. Transition metal dichalcogenides offer a wide array of materials that can be exfoliated into ultrathin 2D sheets. A cooled SPM can be used to detect quantum dots as well as to image electron flow. The tip charge capacitively couples to electrons on the dot, acting as a gate to tune the dot conductance. Coulomb blockade peaks appear as a bullseye pattern in an SPM image as the tip is raster scanned above the dot. This approach was used to detect quantum dots in a MoS 2 channel as the carrier density was reduced and electrons pooled in low energy points. Through our DOE supported research, cooled SPM imaging has proven to be a very useful tool to uncover the motion of electrons and holes in the new quantum materials graphene and MoS 2 .

36 MATERIALS SCIENCE↗

Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability

To this day, trapezoidal defects are found in clusters and high counts in wafers representing the industry standard in terms of material quality being produced. This study sheds light on the nature, origin, behavior, and impact of this defect on device yield and reliability. Trapezoidal defects in 4H-SiC epitaxial layers were investigated by photoluminescence (PL) imaging, scanning electron microscopy (SEM), cathodoluminescence spectrum imaging (CLSI), SEM electron beam induced current (EBIC) imaging, and by transmission electron microscopy (TEM) observation. The bar-shaped stacking faults were identified by the PL and CL measurements with a peak emission wavelength of 420 and 450 nm. An optoelectronic behavioral study based on the recombination enhanced dislocation glide mechanism revealed how expanding dislocations and stacking faults interact with each other. Combining the luminescence and microscopy results, the nature of the stacking faults was identified as being a combination of Shockley-type and Frank-type stacking faults. The TEM analysis showed that these defects originate from the substrate and the stacking sequences of some of the faults were determined as (…2, 4, 2…) and (…2, 3, 2…) in the Zhdanov's notation by high-resolution TEM. The origin of this defect is speculated based on our results and previous reports. The EBIC imaging showed that the high density of SFs in these towers is a strong site of carrier recombination, which presumably has an impact on the transfer characteristics of SiC devices. Furthermore, these defects have shown to impact metal oxide semiconductor field effect transistors electrical performance via an increase in the on-state resistance depending on the coverage percentage of the tower of defects in the active area of the device.

4H-SiC↗

Contrast Mechanisms in Secondary Electron e-Beam-Induced Current (SEEBIC) Imaging

Abstract Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam (e-beam) is focused on the sample in the STEM, secondary electrons (SEs) are generated. If the sample is conductive and electrically connected to an amplifier, the SE current can be measured as a function of the e-beam position. This scenario is similar to the better-known scanning electron microscopy-based technique, electron beam-induced current imaging, except that the signal in the STEM is generated by the emission of SEs, hence the name secondary electron e-beam-induced current (SEEBIC), and in this case, the current flows in the opposite direction. Here, we provide a brief review of recent work in this area, examine the various contrast generation mechanisms associated with SEEBIC, and illustrate its use for the characterization of graphene nanoribbon devices.

47 OTHER INSTRUMENTATION↗

Modulating Electron Beam–Sample Interactions in Imaging and Diffraction Modes by Dose Fractionation with Low Dose Rates

Abstract Technological opportunities are explored to enhance detection schemes in transmission electron microscopy (TEM) that build on the detection of single-electron scattering events across the typical spectrum of interdisciplinary applications. They range from imaging with high spatiotemporal resolution to diffraction experiments at the window to quantum mechanics, where the wave-particle dualism of single electrons is evident. At the ultimate detection limit, where isolated electrons are delivered to interact with solids, we find that the beam current dominates damage processes instead of the deposited electron charge, which can be exploited to modify electron beam-induced sample alterations. The results are explained by assuming that all electron scattering are inelastic and include phonon excitation that can hardly be distinguished from elastic electron scattering. Consequently, a coherence length and a related coherence time exist that reflect the interaction of the electron with the sample and change linearly with energy loss. Phonon excitations are of small energy (<100 meV), but they occur frequently and scale with beam current in the irradiated area, which is why we can detect their contribution to beam-induced sample alterations and damage.

47 OTHER INSTRUMENTATION↗

Electron beam characterization via quantum coherent electric field imaging

We demonstrate an all-optical, minimally invasive electron beam (𝑒−beam) characterization using Rydberg electrometry. An 𝑒-beam passes through a localized detector volume containing thermal Rb atoms that are optically excited in a quantum superposition of ground and Rydberg states. The 𝑒-beam's electric field perturbs atomic coherence and modifies resonance fluorescence in a narrow spectral region near the two-photon optical transition. Imaging Rb fluorescence provides a map of the electric field from the 𝑒-beam via Rydberg state Stark shifts and allows us to reconstruct the 𝑒-beam width, centroid position, and current. For an 𝑒-beam of 20 keV and electron currents of 20–40 µ⁢A, we measured the centroid position with an accuracy of ≤ 8 µ⁢m and width to within 100 µ⁢m, limited by the experimental sensitivity of electric field reconstruction of ∼0.02 V/cm. This method is suitable for a wide range of electron energies and currents, and can be adopted for nuclear and high-energy experiments for minimally invasive real-time diagnostics and profiling of charged particle beams.

Behary, Rob [College of William and Mary, Williams↗

Optimize Electron Beam Energy toward In Situ Imaging of Thick Frozen Bio-Samples with Nanometer Resolution Using MeV-STEM

To optimize electron energy for in situ imaging of large biological samples up to 10 μm in thickness with nanoscale resolutions, we implemented an analytical model based on elastic and inelastic characteristic angles. This model has been benchmarked by Monte Carlo simulations and can be used to predict the transverse beam size broadening as a function of electron energy while the probe beam traverses through the sample. As a result, the optimal choice of the electron beam energy can be realized. In addition, the impact of the dose-limited resolution was analysed. While the sample thickness is less than 10 μm, there exists an optimal electron beam energy below 10 MeV regarding a specific sample thickness. However, for samples thicker than 10 μm, the optimal beam energy is 10 MeV or higher depending on the sample thickness, and the ultimate resolution could become worse with the increase in the sample thickness. Moreover, a MeV-STEM column based on a two-stage lens system can be applied to reduce the beam size from one micron at aperture to one nanometre at the sample with the energy tuning range from 3 to 10 MeV. In conjunction with the state-of-the-art ultralow emittance electron source that we recently implemented, the maximum size of an electron beam when it traverses through an up to 10 μm thick bio-sample can be kept less than 10 nm . This is a critical step toward the in situ imaging of large, thick biological samples with nanometer resolution.

36 MATERIALS SCIENCE↗

Potential usefulness of CCD imagers in astronomy

Two dimensional detectors have been important in astronomy since the earliest days of the science. Recently, the requirements for greater photometric accuracy, sensitivity and spectral coverage have driven the search for better imaging devices. Electron beam readout devices with a variety of target materials and intensification schemes, including the SEC and silicon vidicons, have been used successfully. The CCD as an image detector has several potential advantages over electron beam readout devices; low noise, simple construction and geometric stability are among them.

Mccord, T. B.↗

Optimize electron beam energy toward in-situ imaging of large thick bio-samples with nanometer resolution

To optimize electron energy toward in-situ imaging large bio-samples up to 10-μm thickness with nanoscale resolution, we implemented an analytical model based on elastic and inelastic characteristic angles 1. This model can be used to predict the transverse beam size broadening as a function of electron energy while the probe beam traverses through the sample. As result, the optimal choice of the electron beam energy can be realized. While the sample thickness is less than 10 μm, there exists an optimal electron beam energy below 10 MeV regarding a specific sample thickness. However, for samples thicker than 10 μm, the optimal beam energy is 10 MeV, and the ultimate resolution could become worse with the increase of the sample thickness.

43 PARTICLE ACCELERATORS↗

Strategies to overcome electron-beam issues in liquid phase TEM: Study of chemical processes

Abstract Liquid phase (or liquid cell) transmission electron microscopy (TEM) has become a powerful platform for in situ investigation of various chemical processes at the nanometer or atomic level. The electron beam for imaging can also induce perturbation to the chemical processes. Thus, it has been a concern that the observed phenomena in a liquid cell could deviate from the real-world processes. Strategies have been developed to overcome the electron-beam-induced issues. This article provides an overview of the electron-beam effects, and discusses various strategies in liquid cell TEM study of nucleation, growth, and self-assembly of nanoscale materials, where an electron beam is often used to initiate the reactions, and highly electron-beam-sensitive electrochemical reactions. Graphical abstract

Zheng, Wenjing↗

Thermal Imaging for Assessment of Electron-Beam Free Form Fabrication (EBF(sup 3)) Additive Manufacturing Welds

Additive manufacturing is a rapidly growing field where 3-dimensional parts can be produced layer by layer. NASA s electron beam free-form fabrication (EBF(sup 3)) technology is being evaluated to manufacture metallic parts in a space environment. The benefits of EBF(sup 3) technology are weight savings to support space missions, rapid prototyping in a zero gravity environment, and improved vehicle readiness. The EBF(sup 3) system is composed of 3 main components: electron beam gun, multi-axis position system, and metallic wire feeder. The electron beam is used to melt the wire and the multi-axis positioning system is used to build the part layer by layer. To insure a quality weld, a near infrared (NIR) camera is used to image the melt pool and solidification areas. This paper describes the calibration and application of a NIR camera for temperature measurement. In addition, image processing techniques are presented for weld assessment metrics.

Zalameda, Joseph N.↗

Optical emission spectroscopy and imaging of low-pressure N2 plasmas generated by intense fast-pulsed electron beams

An optical emission spectroscopic (OES) and imaging characterization is conducted on N2 plasmas generated by a 100 keV fast-pulsed electron beam. The electron beams are injected into an N2 gas filled volume with a current of 4.5 kA (300 A/cm2) and a 100 ns pulse width. The characterization is conducted at the pressures, 1 Torr and 0.1 Torr, corresponding to two distinct regimes that exhibit significantly different plasma dynamics. Beam impact ionization is shown to be a primary mechanism for producing low temperature plasmas at 1 Torr during beam output. After beam termination, ionization by an inductive electric field becomes the primary mechanism for plasma formation later in time for both pressures. OES and plasma imaging are used in this work as a diagnostic tool to track the distribution of electronic, vibrational, and rotational state transitions and ionized species. This is achieved with the use of a multi-resolution suite of spectrometers capable of acquiring time-resolved spectra. Vibrational and rotational bands of the N2 second positive system (C3Πu→B3Πg) and the N2+ first negative system (B2Σu+→X2Σg+) are identified in both regimes as well as N+ states exclusively in the lower pressure regime. Vibrational and rotational spectra are shown to track the evolution of the time-varying plasma current. Plasma imaging also reveals spatially nonuniform plasma emission at 0.1 Torr. A few hundred shots are recorded to fully characterize the emissions, and results are shown to be highly reproducible (≤±1% with 2σ confidence).

Kaiser, E. R. (ORCID:0000000336493938)↗

Local negative permittivity and topological phase transition in polar skyrmions

Topological solitons such as magnetic skyrmions have drawn attention as stable quasi-particle-like objects. The recent discovery of polar vortices and skyrmions in ferroelectric oxide superlattices has opened up new vistas to explore topology, emergent phenomena and approaches for manipulating such features with electric fields. Using macroscopic dielectric measurements, coupled with direct scanning convergent beam electron diffraction imaging on the atomic scale, theoretical phase-field simulations and second-principles calculations, we demonstrate that polar skyrmions in (PbTiO 3 ) n /(SrTiO 3 ) n superlattices are distinguished by a sheath of negative permittivity at the periphery of each skyrmion. This enhances the effective dielectric permittivity compared with the individual SrTiO 3 and PbTiO 3 layers. Moreover, the response of these topologically protected structures to electric field and temperature shows a reversible phase transition from the skyrmion state to a trivial uniform ferroelectric state, accompanied by large tunability of the dielectric permittivity. Pulsed switching measurements show a time-dependent evolution and recovery of the skyrmion state (and macroscopic dielectric response). The interrelationship between topological and dielectric properties presents an opportunity to simultaneously manipulate both by a single, and easily controlled, stimulus, the applied electric field. Polar skyrmions are topologically protected structures that can exist in (PbTiO 3 ) n /(SrTiO 3 ) n superlattices. Here, it is shown that they have negative permittivity at the surface, and that they can undergo a reversible phase transition with large dielectric tunability under an electric field.

36 MATERIALS SCIENCE↗

Multislice Electron Tomography Using Four-Dimensional Scanning Transmission Electron Microscopy

Electron tomography offers useful three-dimensional (3D) structural information, which cannot be observed by two-dimensional imaging. By combining annular dark-field scanning transmission electron microscopy (ADF STEM) with aberration correction, the resolution of electron tomography has reached atomic resolution. However, tomography based on ADF STEM inherently suffers from several issues, including a high electron-dose requirement, poor contrast for light elements, and artifacts from image-contrast nonlinearity. Here, we develop an alternative method called multislice electron tomography (MSET) based on four-dimensional STEM tilt series. In this study, our simulations show that multislice-based 3D reconstruction can effectively reduce undesirable reconstruction artifacts from the nonlinear contrast, allowing precise determination of atomic structures with improved sensitivity for low-Z elements, at considerably low electron-dose conditions. We expect that the MSET method can be applied to a wide variety of materials, including radiation-sensitive samples and materials containing light elements whose 3D atomic structures have never been fully elucidated due to electron-dose limitations or nonlinear imaging contrast.

74 ATOMIC AND MOLECULAR PHYSICS↗

Design of a multichannel photonic crystal dielectric laser accelerator

To be useful for most scientific and medical applications, compact particle accelerators will require much higher average current than enabled by current architectures. For this purpose, we propose a photonic crystal architecture for a dielectric laser accelerator, referred to as a multi-input multi-output silicon accelerator (MIMOSA), that enables simultaneous acceleration of multiple electron beams, increasing the total electron throughput by at least 1 order of magnitude. To achieve this, we show that the photonic crystal must support a mode at the Γ point in reciprocal space, with a normalized frequency equal to the normalized speed of the phase-matched electron. We show that the figure of merit of the MIMOSA can be inferred from the eigenmodes of the corresponding infinitely periodic structure, which provides a powerful approach to design such devices. Additionally, we extend the MIMOSA architecture to electron deflectors and other electron manipulation functionalities. These additional functionalities, combined with the increased electron throughput of these devices, permit all-optical on-chip manipulation of electron beams in a fully integrated architecture compatible with current fabrication technologies, which opens the way to unconventional electron beam shaping, imaging, and radiation generation.

43 PARTICLE ACCELERATORS↗

Mapping Conductance and Switching Behavior of Graphene Devices In Situ

Graphene is proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become nontrivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Herein, proof of principle results at the crossroads between 2D nanoelectronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC) is presented. A device platform compatible with scanning transmission electron microscopy investigations is introduced. Then how the SEEBIC imaging technique can be used to visualize conductance and connectivity in single layer graphene nanodevices, even while supported on a thicker substrate (conditions under which conventional imaging fails) is shown. Finally, it is shown that the SEEBIC imaging technique can detect subtle differences in charge transport through time in nonohmic graphene nanoconstrictions indicating the potential to reveal dynamic electronic processes.

36 MATERIALS SCIENCE↗

Conjugate echoes of artificially injected electron beams detected optically by means of new image processing

Artificial auroral streaks were detected following two upward injections of energetic electrons (38 keV and 26 keV) from the Echo 4 rocket-borne electron accelerator. Newly developed image processing techniques are used to detect and describe the streaks. It is found that the potential of the payload remained below 1 kV during 45 mA injections at an altitude of 210 km. The echo streaks show little dispersion in time or space, suggesting that the portion of the beam returning to the northern hemisphere loss cone remained collimated and nearly monoenergetic. There was, however, a 70 percent loss in the return flux. The causes of this loss are discussed.

Hallinan, Thomas J.↗

Design of Electrostatic Aberration Correctors for Scanning Transmission Electron Microscopy

Abstract In a scanning transmission electron microscope (STEM), producing a high-resolution image generally requires an electron beam focused to the smallest point possible. However, the magnetic lenses used to focus the beam are unavoidably imperfect, introducing aberrations that limit resolution. Modern STEMs overcome this by using hardware aberration correctors comprised of many multipole elements, but these devices are complex, expensive, and can be difficult to tune. We demonstrate a design for an electrostatic phase plate that can act as an aberration corrector. The corrector is comprised of annular segments, each of which is an independent two-terminal device that can apply a constant or ramped phase shift to a portion of the electron beam. We show the improvement in image resolution using an electrostatic corrector. Engineering criteria impose that much of the beam within the probe-forming aperture be blocked by support bars, leading to large probe tails for the corrected probe that sample the specimen beyond the central lobe. We also show how this device can be used to create other STEM beam profiles such as vortex beams and probes with a high degree of phase diversity, which improve information transfer in ptychographic reconstructions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗