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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, S. A.↗
NASA NTRS1996

Characterization of SiGe/Ge heterostructures and graded layers using variable angle spectroscopic ellipsometry

Variable angle spectroscopic ellipsometry (VASE) has been used to characterize Si(x)Ge(1-x)/Ge superlattices (SLs) grown on Ge substrates and thick Si(x)Ge(1-x)/Ge heterostructures grown on Si substrates. Our VASE analysis yielded the thicknesses and alloy compositions of all layers within the optical penetration depth of the surface. In addition, strain effects were observed in the VASE results for layers under both compressive and tensile strain. Results for the SL structures were found to be in close agreement with high resolution x-ray diffraction measurements made on the same samples. The VASE analysis has been upgraded to characterize linearly graded Si(x)Ge(1-x) buffer layers. The algorithm has been used to determine the total thickness of the buffer layer along with the start and end alloy composition by breaking the total thickness into many (typically more than 20) equal layers. Our ellipsometric results for 1 (mu)m buffer layers graded in the ranges 0.7 less than or = x less than or = 1.0, and 0.5 less than or = x less than or = 1.0 are presented, and compare favorably with the nominal values.

Croke, E. T.↗
NASA NTRS1995

Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

Si(x)Ge(1-x)heterostructures on Si substrates have been widely studied due to the maturity of Si technology. However, work on Si(x)Ge)1-x) heterostructures on Ge substrates has not received much attention. A Si(x)Ge(1-x) layer on a Si substrate is under compressive strain while Si(x)Ge(1-x) on Ge is under tensile strain; thus the critical points will behave differently. In order to accurately characterize high Ge content Si(x)Ge(1-x) layers the energy shift algorithm used to calculate alloy compositions, has been modified. These results have been used along with variable angle spectroscopic ellipsometry (VASE) measurements to characterize Si(x)Ge(1-x)/Ge superlattices grown on Ge substrates. The results agree closely with high resolution x-ray diffraction measurements made on the same samples. The modified energy shift algorithm also allows the VASE analysis to be upgraded in order to characterize linearly graded layers. In this work VASE has been used to characterize graded Si(x)Ge(1-x) layers in terms of the total thickness, and the start and end alloy composition. Results are presented for a 1 micrometer Si(x)Ge(1-x) layer linearly graded in the range 0.5 less than or equal to x less than or equal to 1.0.

Heyd, A. R.↗
NASA NTRS2002

Monitoring Photodeposition of Polymer Films from Diacetylene Monomer Solutions Using In Situ Real-Time Spectroscopic Ellipsometry

Photodeposition of thin polymer (PDAMNA) films from diacetylene monomer (DAMNA) solutions onto gold coated silica substrates with UV light was studied using the technique of in-situ real time spectroscopic ellipsometry. The dielectric function of PDAMNA was determined; and the thickness of the growing PDAMNA films over a 4 hour time interval was determined using a linear regression fit of the experimental data to a homogeneous four phase optical model. It was found that stirring the solution dramatically lowers the rate of film deposition, suggesting that convection can affect the attachment kinetics of the film to the substrate. Lastly, the morphology of the PDAMNA films was examined using non-contact mode atomic force microscopy.

Hui, Du↗
NASA NTRS2002

Characterization on Smart Optics Using Ellipsometry

Recently, NASA Langley Research Center developed a smart active optical concept to filter narrow band pass or to control optical intensity. To characterize developed smart optics materials, we have measured thickness and reflection properties of the materials using a WVASE32 ellipsometry. This project allowed us to: (1) prepare the smart optical materials for measurement of thickness and optical properties at NASA Langley Research Center; (2) measure thickness and optical properties of the smart optical materials; (3) evaluate the measured properties in terms of applications for narrow band-pass filters. The outcomes of this research provide optical properties and physical properties of the smart optics on a selected spectral range. The applications of this development were used for field-controlled spectral smart filters.

Song, Kyo D.↗
NASA NTRS2007

Genesis Silicon Carbide Concentrator Target 60003 Preliminary Ellipsometry Mapping Results

The Genesis concentrator was custom designed to focus solar wind ions primarily for terrestrial isotopic analysis of O-17/O-16 and O-18/O-16 to +/-1%, N-15/N-14 to +/-1%, and secondarily to conduct elemental and isotopic analysis of Li, Be, and B. The circular 6.2 cm diameter concentrator target holder was comprised of four quadrants of highly pure semiconductor materials that included one amorphous diamond-like carbon, one C-13 diamond, and two silicon carbide (SiC). The amorphous diamond-like carbon quadrant was fractured upon impact at Utah Test and Training Range (UTTR), but the remaining three quadrants survived fully intact and all four quadrants hold an important collection of solar wind. The quadrants were removed from the target holder at NASA Johnso n Space Center Genesis Curation Laboratory in April 2005, and have been housed in stainless steel containers under continual nitrogen purge since time of disintegration. In preparation for allocation of a silicon carbide target for oxygen isotope analyses at UCLA, the two SiC targets were photographed for preliminary inspection of macro particle contamination from the hard non-nominal landing as well as characterized by spectroscopic ellipsometry to evaluate thin film contamination. This report is focused on Genesis SiC target sample number 60003.

Calaway, M. J.↗
NASA NTRS2008

Determining Concentration of Nanoparticles from Ellipsometry

A method of using ellipsometry or polarization analysis of light in total internal reflection of a surface to determine the number density of gold nanoparticles on a smooth substrate has been developed. The method can be modified to enable determination of densities of sparse distributions of nanoparticles in general, and is expected to be especially useful for measuring gold-nanoparticle-labeled biomolecules on microarrays. The method is based on theoretical calculations of the ellipsometric responses of gold nanoparticles. Elements of the calculations include the following: For simplicity, the gold nanoparticles are assumed to be spherical and to have the same radius. The distribution of gold nanoparticles is assumed to be a sub-monolayer (that is, sparser than a monolayer). The optical response of the sub-monolayer is modeled by use of a thin-island-film theory, according to which the polarizabilities parallel and perpendicular to the substrate are functions of the wavelength of light, the dielectric functions (permittivities expressed as complex functions of frequency or wavelength) of the gold and the suspending medium (in this case, the suspending medium is air), the fraction of the substrate area covered by the nanoparticles, and the radius of the nanoparticles. For the purpose of the thin-island-film theory, the dielectric function of the gold nanoparticles is modeled as the known dielectric function of bulk gold plus a correction term that is necessitated by the fact that the mean free path length for electrons in gold decreases with decreasing radius, in such a manner as to cause the imaginary part of the dielectric function to increase with decreasing radius (see figure). The correction term is a function of the nanoparticle radius, the wavelength of light, the mean free path and the Fermi speed of electrons in bulk gold, the plasma frequency of gold, and the speed of light in a vacuum. These models are used to calculate ellipsometric responses for various concentrations of gold nanoparticles having an assumed radius. The modeled data indicates distinct spectral features for both the real and the imaginary part of the dielectric function. An ellipsometric measurement would determine this distinct feature and thus can be used to measure nanoparticle concentration. By "ellipsometric responses" is meant the intensities of light measured in various polarization states as functions of the angle of incidence and the polarization states of the incident light. These calculated ellipsometric responses are used as calibration curves: Data from subsequent ellipsometric measurements on real specimens are compared with the calibration curves. The concentration of the nanoparticles on a specimen is assumed to be that of the calibration curve that most closely matches the data pertaining to that specimen.

Venkatasubbarao, Srivatsa↗
NASA NTRS1993

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

Sieg, R. M.↗
NASA NTRS2018

Thermal Stability Analysis of Gevo Jet Fuel Using Ellipsometry

Thermal stability is an important characteristic of alternative fuels that must be evaluated before they can be used in aviation engines. This characteristic is of great importance to the effectiveness of the fuel as a coolant and to the engine's combustion performance. The thermal stability of Gevo fuel, an alcohol to jet fuel made from plant feedstock was studied. This analysis was used to make comments on the effectiveness of the current thermal stability test standard. This work was performed using a spectroscopic ellipsometer to measure the thickness of deposits left on aluminum substrates. It was observed that Gevo deposit thickness increased slowly up to 375 C and much more rapidly after that point. Similar behavior was observed in JP-8 fuel. Comparisons were also made between color standard ratings and ellipsometric thickness measurements, and it was found that in some cases, darker colors did not indicate thicker deposits. Reference tubes were used to validate the optical models used in this work, and different optical constants were found to best model the results than what are published in the ASTM D3241 test method for thermal stability.

Ellipsometry↗
NASA NTRS1977

Remote sensing of vegetation and soil using microwave ellipsometry

A method is described of determining vegetation height and water content of vegetation from the intensity and state of elliptical polarization of a reflected train of microwaves. The method comprises the steps of reflecting a circularly polarized train of microwaves from vegetation at a predetermined angle of incidence and detecting the reflected train of microwaves. The ratio of the intensities of the electric field vector components is determined, the phase difference of the components is measured, and the refractive index and thickness of the layer of vegetation are computed from a formula. The refractive index is given essentially by the water content of the vegetation.

Auer, S. O.↗
NASA NTRS1987

Investigation of PTFE transfer films by infrared emission spectroscopy and phase-locked ellipsometry

When a PTFE sheet was rubbed unidirectionally over a smooth surface of stainless steel an essentially monomolecular transfer film was formed. By ellipsometric and emission infrared spectroscopic techniques it was shown that the film was 10 to 15 A thick and birefringent. From the intensity differences of infrared bands obtained with a polarizer passing radiation polarized in mutually perpendicular planes, it was possible to deduce transfer film orientation with the direction of rubbing. After standing in air for several weeks the transfer films apparently increased in thickness by as much as threefold. At the same time both the index of refraction and the absorption index decreased. Examination of the surfaces by optical and electron microscopies showed that the films had become porous and flaky. These observations were consistent with previous tribological measurements. The coefficients of friction decreased with the formation of the transfer film but increased again as the film developed breaks. The applicability of the ellipsometric and polarized infrared emission techniques to the identification of monomolecular tribological transfer films of polymers such as PTFE has been demonstrated.

Lauer, James L.↗
NASA NTRS1988

Investigation of PTFE transfer films by infrared emission spectroscopy and phase-locked ellipsometry

When a PTFE sheet was rubbed unidirectionally over a smooth surface of stainless steel an essentially monomolecular transfer film was formed. by ellipsometric and emission infrared spectroscopic techniques it was shown that the film was 10 to 15 A thick and birefringent. From the intensity differences of infrared bands obtained with a polarizer passing radiation polarized in mutually perpendicular planes, it was possible to deduce transfer film orientation with the direction of rubbing. After standing in air for several weeks the transfer films apparently increased in thickness by as much as threefold. At the same time both the index of refraction and the absorption index decreased. Examination of the surfaces by optical and electron microscopies showed that the films had become porous and flaky. These observations were consistent with previous tribological measurements. The coefficients of friction decreased with the formation of the transfer film but increased again as the film developed breaks. The applicability of the ellipsometric and polarized infrared emission techniques to the identification of monomolecular tribological transfer films of polymers such as PTFE has been demonstrated.

Lauer, James L.↗
NASA NTRS1990

Thin film characterization using spectroscopic ellipsometry

The application of the multiple angle and wavelength (MAW) technique to measure the dielectric function of semiconducting films is discussed. This technique evaluates unambiguously the complex dielectric function, epsilon (E), of the film without any pre-assumptions. In some cases the effective medium approximation (EMA) was used to determine the volume fraction of the film components. Application of the MAW technique to several semiconducting films was published previously. Different applications and examples are given, including metal and insulator films.

Alterovitz, Samuel A.↗
NASA NTRS1997

Use of Variable Angle Spectroscopic Ellipsometry in Order to Determine Contaminant Optical Properties

In order to measure contaminant levels found in the manufacture of the Redesigned Solid Rocket Motor (RSRM), optical properties of the contaminants are needed to develop standards for calibration purposes. Specific to our efforts is the determination of the complex index of refraction for a hydrocarbon mixture and a commercial methyl siloxane. Using ellipsometric measurements with multiple angles of incident and a range of wavelengths in the near infrared a determination of the index of refraction and the extinction coefficient were made for the contaminants. This paper will present the optical techniques and modeling approach used to determine these optical constants of the hydrocarbon mixture and the methyl siloxane studied.

Hughes, C.↗