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At least 37 records · Page 2

Barrier/n/n+ Varactor Frequency Multipliers

Barrier/n/n+ (BNN+) varactor diodes developed as frequency multipliers at millimeter and submillimeter wavelengths. Devices required to serve as frequency triplers or quintuplers to provide powers of order of milliwatts at frequencies from 0.1 THz to about 1 THz. Feature Mott or heterojunction barriers and back-to-back diode configuration, which make it possible to obtain symmetrical capacitance-versus-voltage characteristics with high ratio between maximum and minimum capacitances. Extension of barrier/intrinsic/n+ (BIN+) concept described in "BIN Diode for Submillimeter Wavelengths" (NPO-17258).

Lieneweg, Udo↗

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.

Monolithic Microwave Integrated Circuit, (MMIC)↗

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW

passively cooled detectors↗

All-Solid-State 2.45-to-2.78-THz Source

Sources in the THz range are required in order for NASA to implement heterodyne instruments in this frequency range. The source that has been demonstrated here will be used for an instrument on the SOFIA platform as well as for upcoming astrophysics missions. There are currently no electronic sources in the 2 3- THz frequency range. An electronically tunable compact source in this frequency range is needed for lab spectroscopy as well as for compact space-deployable heterodyne receivers. This solution for obtaining useful power levels in the 2 3- THz range is based on utilizing power-combined multiplier stages. Utilizing power combining, the input power can be distributed between different multiplier chips and then recombined after the frequency multiplication. A continuous wave (CW) coherent source covering 2.48 2.75 THz, with greater than 10 percent instantaneous and tuning bandwidth, and having l 14 W of output power at room temperature, has been demonstrated. This source is based on a 91.8 101.8-GHz synthesizer followed by a power amplifier and three cascaded frequency triplers. It demonstrates that purely electronic solid-state sources can generate a useful amount of power in a region of the electromagnetic spectrum where lasers (solid-state or gas) were previously the only available coherent sources. The bandwidth, agility, and operability of this THz source has enabled wideband, high-resolution spectroscopic measurements of water, methanol, and carbon monoxide with a resolution and signal-to-noise ratio unmatched by other existing systems, providing new insight in the physics of these molecules. Further - more, the power and optical beam quality are high enough to observe the Lamb-dip effect in water. The source frequency has an absolute accuracy better than 1 part in 1012, and the spectrometer achieves sub-Doppler frequency resolution better than 1 part in 108. The harmonic purity is better than 25 dB. This source can serve as a local oscillator for a variety of heterodyne systems, and can be used as a method for precision control of more powerful but much less frequency-agile quantum mechanical terahertz sources.

Mehdi, Imran↗

Modeling of planar varactor frequency multiplier devices with blocking barriers

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Lieneweg, Udo↗

NASA Tech Briefs, February 2009

Tech Briefs are short announcements of innovations originating from research and development activities of the National Aeronautics and Space Administration. They emphasize information considered likely to be transferable across industrial, regional, or disciplinary lines and are issued to encourage commercial application. Topics covered include: Measuring Low Concentrations of Liquid Water in Soil; The Mars Science Laboratory Touchdown Test Facility; Non-Contact Measurement of Density and Thickness Variation in Dielectric Materials; Compact Microwave Fourier Spectrum Analyzer; InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz; Combinatorial Generation of Test Suites; In-Phase Power-Combined Frequency Tripler at 300 GHz; Electronic System for Preventing Airport Runway Incursions; Smaller but Fully Functional Backshell for Cable Connector; Glove-Box or Desktop Virtual-Reality System; Composite Layer Manufacturing with Fewer Interruptions; Improved Photoresist Coating for Making CNT Field Emitters; A Simplified Diagnostic Method for Elastomer Bond Durability; Complex Multifunctional Polymer/Carbon-Nanotube Composites; Very High Output Thermoelectric Devices Based on ITO Nanocomposites; Reducing Unsteady Loads on a Piggyback Miniature Submarine; Ultrasonic/Sonic Anchor; Grooved Fuel Rings for Nuclear Thermal Rocket Engines; Pulsed Operation of an Ion Accelerator; Autonomous Instrument Placement for Mars Exploration Rovers; Mission and Assets Database; TCP/IP Interface for the Satellite Orbit Analysis Program (SOAP); Trajectory Calculator for Finite-Radius Cutter on a Lathe; Integrated System Health Management Development Toolkit.

Source record↗

NASA Tech Briefs, February 2010

Topics covered include: Insulation-Testing Cryostat With Lifting Mechanism; Optical Testing of Retroreflectors for Cryogenic Applications; Measuring Cyclic Error in Laser Heterodyne Interferometers; Self-Referencing Hartmann Test for Large-Aperture Telescopes; Measuring a Fiber-Optic Delay Line Using a Mode-Locked Laser; Reconfigurable Hardware for Compressing Hyperspectral Image Data; Spatio-Temporal Equalizer for a Receiving-Antenna Feed Array; High-Speed Ring Bus; Nanoionics-Based Switches for Radio-Frequency Applications; Lunar Dust-Tolerant Electrical Connector; Compact, Reliable EEPROM Controller; Quad-Chip Double-Balanced Frequency Tripler; Ka-Band Waveguide Two-Way Hybrid Combiner for MMIC Amplifiers; Radiation-Hardened Solid-State Drive; Use of Nanofibers to Strengthen Hydrogels of Silica, Other Oxides, and Aerogels; Two Concepts for Deployable Trusses; Concentric Nested Toroidal Inflatable Structures; Investigating Dynamics of Eccentricity in Turbomachines; Improved Low-Temperature Performance of Li-Ion Cells Using New Electrolytes; Integrity Monitoring of Mercury Discharge Lamps; White-Light Phase-Conjugate Mirrors as Distortion Correctors; Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer; ICER-3D Hyperspectral Image Compression Software; and Context Modeler for Wavelet Compression of Spectral Hyperspectral Images.

Source record↗

MMIC Replacement for Gunn Diode Oscillators

An all-solid-state replacement for high-frequency Gunn diode oscillators (GDOs) has been proposed for use in NASA s millimeter- and submillimeter-wave sensing instruments. Highly developed microwave oscillators are used to achieve a low-noise and highly stable reference signal in the 10-40-GHz band. Compact amplifiers and high-power frequency multipliers extend the signal to the 100-500-GHz band with minimal added phase noise and output power sufficient for NASA missions. This technology can achieve improved output power and frequency agility, while maintaining phase noise and stability comparable to other GDOs. Additional developments of the technology include: a frequency quadrupler to 145 GHz with 18 percent efficiency and 15 percent fixed tuned bandwidth; frequency doublers featuring 124, 240, and 480 GHz; an integrated 874-GHz subharmonic mixer with a mixer noise temperature of 3,000 K DSB (double sideband) and mixer conversion loss of 11.8 dB DSB; a high-efficiency frequency tripler design with peak output power of 23 mW and 14 mW, and efficiency of 16 and 13 percent, respectively; millimeter-wave integrated circuit (MMIC) power amplifiers to the 30-40 GHz band with high DC power efficiency; and an 874-GHz radiometer suitable for airborne observation with state-of-the-art sensitivity at room temperature and less than 5 W of total power consumption.

Crowe, Thomas W.↗

Compact Receiver Front Ends for Submillimeter-Wave Applications

The current generation of submillimeter-wave instruments is relatively mass and power-hungry. The receiver front ends (RFEs) of a submillimeter instrument form the heart of the instrument, and any mass reduction achieved in this subsystem is propagated through the instrument. In the current implementation, the RFE consists of different blocks for the mixer and LO circuits. The motivation for this work is to reduce the mass of the RFE by integrating the mixer and LO circuits in one waveguide block. The mixer and its associated LO chips will all be packaged in a single waveguide package. This will reduce the mass of the RFE and also provide a number of other advantages. By bringing the mixer and LO circuits close together, losses in the waveguide will be reduced. Moreover, the compact nature of the block will allow for better thermal control of the block, which is important in order to reduce gain fluctuations. A single waveguide block with a 600- GHz RFE functionality (based on a subharmonically pumped Schottky diode pair) has been demonstrated. The block is about 3x3x3 cubic centimeters. The block combines the mixer and multiplier chip in a single package. 3D electromagnetic simulations were carried out to design the waveguide circuit around the mixer and multiplier chip. The circuit is optimized to provide maximum output power and maximum bandwidth. An integrated submillimeter front end featuring a 520-600-GHz sub-harmonic mixer and a 260-300-GHz frequency tripler in a single cavity was tested. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional metal-machined blocks. Measurement results on the metal block give best DSB (double sideband) mixer noise temperature of 2,360 K and conversion losses of 7.7 dB at 520 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer is between 30 and 50 mW.

Mehdi, Imran↗

An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz

Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.

Siles, Jose V.↗

Broadband Sources in the 1-3 THz Range

Broadband electronically tunable sources in the terahertz range are a critical technology for enabling space-borne as well as ground-based applications. By power-combining MMIC amplifier and frequency tripler chips, we have recently demonstrated >1 mW of output power at 900 GHz. This source provides a stepping stone to enable sources in the 2-3 THz range than can sufficiently pump multi-pixel imaging arrays.

sources↗

BIN Diode For Submillimeter Wavelengths

Diode formed by selective doping during epitaxial growth, starting with semi-insulating substrate. Use of high-mobility semiconductors like GaAs extends cutoff frequency. Either molecular-beam epitaxy (MBE) or organometallic chemical-vapor deposition used to form layers of diode. Planar growth process permits subsequent fabrication of arrays of diodes by standard photolithographic techniques, to achieve quasi-optical coupling of submillimeter radiation. Useful for generation of harmonics or heterodyne mixing in receivers for atmospheric and space spectroscopy operating at millimeter and submillimeter wavelengths. Used as frequency doublers or triplers, diodes of new type extend frequency range of present solid-state oscillators.

Maserjian, J.↗

Local oscillator chain for 1.55 to 1.75 THz with 100-(mu)W peak power

We report on the design and performance of a fix-tuned x2x 3x 3 frequency multiplier chain that covers 1.55-1.75 THz. The chain is nominally pumped with 100 mW at W-band. At 120 K the measured output power is larger than 4 (mu)W across the band with a peak power of 100 (mu) W at 1.665 THz. A similar chain operated at room temperature produced a peak power of 21 (mu)W. These power levels now make it possible to deploy multipixel heterodyne imaging arrays in this frequency range.

frequency multiplier↗

Solid-state Terahertz Sources for Space Applications

This paper discusses the construction of solid-state frequency multiplier chains utilized far teraherz receiver applications such as the Herschel Space Observatory . Emphasis will he placed on the specific requirements to be met and challenges that were encountered. The availability of high power amplifiers at 100 GHz makes it possible to cascade frequency doublers and triplers with sufficient RF power to pump heterodyne receivers at THz frequencies. The environmental and mechanical constraints will be addressed as well as reliability issues.

solid state frequency↗

A 311-GHz Fundamental Oscillator Using InP HBT Technology

This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller amount of feedback than the common-emitter design, therefore preserving device gain, and was chosen for the oscillator design. The submillimeter-wave region offers several advantages for sensors and communication systems, such as high resolution and all-weather imaging due to the short-wavelength, and improved communication speeds by access to greater frequency bandwidth. This oscillator circuit is a prototype of the first HBT oscillator operating above 300 GHz. Additional development is necessary to increase the output power of the circuit for radar and imaging applications.

Gaier, Todd↗

A 200 GHz tripler using a single barrier varactor

The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.

Choudhury, Debabani↗

A 200 GHz tripler using single barrier varactor

The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has a potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.

Choudhury, Debabani↗