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This presentation is about the leveraging super high optical resolution microscopy to probe the interaction zone between clostritium thermocellum and biomass.
High-resolution scanning transmission electron microscopy (HR STEM) has been used to study the structure of dislocations in single crystal superalloy samples that have been subjected to conditions that favour the primary creep regime. The study has revealed the detailed structure of extended a 2 h112i dislocations as they shear the 0 precipitates during creep. These dislocations dissociate in a manner that is consistent with the PFMD predictions made and also suggests the importance of the reordering process during their movement. The shearing done by the ah112i dislocationswas also found to distort the/ 0 interface, changing its appearance from linear to a 'saw tooth' pattern. Another important observation was the segregation of alloying element with high atomic mass to the stacking faults to reduce their energies during shear. Numerous a 2 h110i dissociated dislocations were also observed in the channels of the superalloy. The high resolution provided by the STEM imaging enables one to study the high energy faults that are usually di*cult to observe in conventional weak-beam TEM, such as CISF and CESF-1 in the 0 andthe ISF in the, and to make estimates of their energies. Key
The paper presents high-resolution electron microscopy investigations of the structure and morphology of cadmium selenide nanocrystals and nanoplatelets, and nanoplatelets having cadmium selenide core/crown nanostructure. These nanocrystals and nanoplatelets are obtained by the colloid technology and are deposited onto carbon substrates using the Langmuir–Blodgett method. It is shown that two-dimensional structures of nanocrystals and nanoplatelets can be formed on carbon substrates. The quantity specifications of these structures are determined in this paper.
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We have combined, in a single instrument, high spatial resolution optical microscopy with the chemical specificity and conformational selectivity of ion mobility mass spectrometry. We discuss the design and construction of this apparatus as well as our efforts in applying this technique to thin films of molecular semiconductor materials.
This poster, part of the Pacific Northwest National Laboratory-sponsored Integration 2020: Visualizing the Proteome virtual conference, discusses super high optical resolution microscopy to probe the interaction zone between Clostritium thermocellum and biomass. Clostridium thermocellum is one of the most efficient microorganisms for the deconstruction of biomass. To achieve this high level of cellulolytic activity, C. thermocellum uses large multienzyme complexes known as cellulosomes to sugars in 4-5 break down polysaccharides found in plant cell walls. The attachment of bacterial switchgrass 70% cells to the nearby substrate via the cellulosome has been hypothesized to be the reason for this high efficiency. The region lying between the cell and the substrate has shown great variation and dynamics that are affected by the growth stage of cells and the substrate used for growth.
Ferritic steels containing copper have been studied as model systems for cluster/precipitate formation in reactor pressure vessel steels. The samples were aged at 400 deg. C for 2000 h and subsequently analyzed using high-resolution electron microscopy. Direct evidence was found that, besides the 9R structure occurring, there exist also 2H variant and stacking faults in local regions of the same Cu precipitate. The 2H variant has a hexagonal unit cell with lattice parameters a = b = 0.254 nm and c = 0.417 nm and axial ratio c/a = 1.642. - Research Highlights: {yields}The crystal structures of the copper precipitates in aged reactor pressure vessel model steel were studied by high-resolution electron microscopy (HRTEM). {yields}Besides the 9R structure, there exist also 2H structure and stacking faults within a copper precipitate in aged samples (2000 h at 400 deg. C). {yields}The (001) plane of the 2H structure copper phase is perpendicular to the (010) plane. {yields}The 2H variant has a hexagonal unit cell with lattice parameters a = b = 0.254 nm and c = 0.417 nm and axial ratio c/a = 1.642.
A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determination of the vectors required in the projection of the perfect lattice to correct the deviated path constructed in the faulted material. Results for several different stacking faults were compared with fault vectors determined from X-ray topographic contrast analysis and were found to be consistent. This technique is expected to applicable to all structures comprising corner shared tetrahedra.
The structure of Li{sub 2}MnO{sub 3}–LiCoO{sub 2} solid solutions or Li{sub 2−δ}(Mn{sub 1−x}Co{sub x}){sub 1+δ}O{sub 3} (LMCO) which are promising lithium-battery cathodes was studied by high-resolution electron microscopy (HREM). X-ray diffraction (XRD) analyses indicate that Li{sub 1.6}Mn{sub 0.2}Co{sub 1.2}O{sub 3} and Li{sub 1.7}Mn{sub 0.4}Co{sub 0.9}O{sub 3} take a rhombohedral (R3-bar m space group) structure, whereas Li{sub 1.85}Mn{sub 0.7}Co{sub 0.45}O{sub 3} and Li{sub 1.95}Mn{sub 0.9}Co{sub 0.15}O{sub 3} take a monoclinic (C2/m) superstructure. HREM studies on those samples reveal that all of the observed crystallites in sample Li{sub 1.95}Mn{sub 0.9}Co{sub 0.15}O{sub 3} contain sharp stripe structures due to the planar defects along the c{sub h}-axis (stacking direction of the hexagonal close-packed planes) of parent rhombohedral R3-bar m cell. Such stripe structures become faint with increasing x, Co content. The origin of the planar defects is mainly attributed not to the different structures but to the different local orientations of the monoclinic LMCO. Local disordering of Li and (Mn,Co) in (Li,Mn,Co) planes is developed with increasing x and the structures are transformed from C2/m to R3-bar m. The alternative (Li,Mn,Co)-plane stacking structure, trigonal P3{sub 1}12 LMCO, was occasionally observed. However, only P3{sub 1}12 LMCO platelets with a thickness of a single unit cell were detected. - Graphical abstract: An HREM image for Li{sub 1.95}(Mn{sub 0.9}Co{sub 0.15})O{sub 3} and schematic drawings of C2/m and P3{sub 1}12 Li{sub 2}MnO{sub 3} projected along the various zone axes. Each projected unit cell is indicated by rectangles and parallelograms . - Highlights: • Li{sub 2−δ}(Mn{sub 1−x}Co{sub x}){sub 1+δ}O{sub 3} was studied by high-resolution electron microscopy (HREM). • HREM studies revealed a large amount of planar defects in C2/m Li{sub 1.95}Mn{sub 0.9}Co{sub 0.15}O{sub 3}. • The origin of the defects is the different local orientations of the C2/m platelets. • P3{sub 1}12 platelets with only single unit cell sequence were detected.
In order to understand the effect of the interface on the spin pumping and magnetic proximity effects, high resolution transmission electron microscopy and ferromagnetic resonance (FMR) were used to analyze Py/Pt bilayer and Pt/Py/Pt trilayer systems. The samples were deposited by dc magnetron sputtering at room temperature on Si (001) substrates. The Py layer thickness was fixed at 12 nm in all the samples and the Pt thickness was varied in a range of 0–23 nm. A diffusion zone of approximately 8 nm was found in the Py/Pt interfaces and confirmed by energy dispersive X-ray microanalysis. The FMR measurements show an increase in the linewidth and a shift in the ferromagnetic resonance field, which reach saturation.
The authors present a viable process to grow the high quality graphene films with control over number of layers by the filtered cathodic vacuum arc (FCVA) technique. In the FCVA process, the different carbon concentrations can be controlled by precisely tuning the arc time (1–4 s). The arc generated carbon was deposited on the nickel catalyst at 800 °C, annealed for 10 min, and cooled down to room temperature in the presence of hydrogen gas, resulting in the graphene films with control over number of layers. Prior to arcing, hydrogen etching of nickel was carried out to clean the surface of the substrate. A growth model to prepare the high quality graphene has also been proposed. The as-grown graphene films were transferred to different substrates and are characterized by Raman spectroscopy, optical microscopy, high resolution transmission electron microscopy, and atomic force microscopy to determine the number of layers present in these films. Raman spectra of the prepared graphene films exhibit change in the G peak position from 1582.4 to 1578.1 cm{sup −1}, two-dimensional (2D) peak shifts from 2688.5 to 2703.8 cm{sup −1}, the value of I{sub 2D}/I{sub G} increased from 0.38 to 3.82, and the full width at half maxima of 2D peak changed from 41 to 70 cm{sup −1}, for different layers of graphene films. The high resolution transmission electron microscopy image revealed that the graphene films prepared for 1 and 2 s arc times have single and bi- or trilayered structures, respectively.
High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogeneities in the semiconductor. In addition, mesoscopic effects on these measurements are considered for the first time. Two simple analytical models are extended to study the sensitivity to heterogeneities as well as mesoscopic effects.
Etched, single crystal tungsten tips spot welded on zone refined tungsten wire for improved cathode sources in high resolution electron microscopes
Precipitation age hardening (T6) response of Al-5.8Zn-2.2Mg-2.5Cu alloy in near-net-shaped cast condition was investigated. Cast samples were manufactured using the controlled diffusion solidification (CDS) technology combined with a metallic mold tilt pour gravity casting process. This study was conducted using (1) non-isothermal aging during differential scanning calorimetry (DSC) experiments and (2) isothermal aging during which transient bulk and micro-hardness measurements taken at four aging temperatures of 343, 393, 433 and 473 K. A detailed microstructural investigation combined with a quantitative image analysis was carried out on both DSC and hardness specimens using high-resolution electron microscopy (HREM) and energy-dispersive spectroscopy (EDS) elemental mappings. Hardness measurements were analyzed using a kinetic modeling approach (single state variable combined with a kinetic equation that is valid for the Al-Zn-Mg-Cu alloys). The results confirm the formation of hardening phases of GP zone, intermediate hardening metastable phase η′ and equilibrium phase η. The results of calorimetric measurements, electron microscopy and selected area diffraction patterns are in good agreement and confirm transient precipitation/dissolution sequences. A mean value of activation energy Q{sub A} of 75 kJ/mol was evaluated for combined bulk diffusion rate of alloying elements during precipitation of strengthening phases within Al matrix.
Due to the exceptional performance of most modern commercial transmission electron microscopes, the achievement of phase-contrast imaging resolution in the sub-2Å range is today a routine exercise, provided the samples are compliant. Nonetheless, there remains room for improvement, and the purpose of this manuscript is to highlight procedures that might be employed by the practicing microscopist for advancing conventional high resolution electron microscopy.
The precipitation and dissolution of water-soluble minerals in aqueous systems is a familiar process occurring commonly in nature. Understanding mineral nucleation and growth during its precipitation is highly desirable, but past in situ techniques have suffered from limited spatial and temporal resolution. In this paper, by using in situ graphene liquid cell electron microscopy, mineral nucleation and growth processes are demonstrated in high spatial and temporal resolution. We precipitate the mineral thenardite (Na 2 SO 4 ) from aqueous solution with electron-beam-induced radiolysis of water. We demonstrate that minerals nucleate with a two-dimensional island structure on the graphene surfaces. We further reveal that mineral grains grow by grain boundary migration and grain rotation. Finally, our findings provide a direct observation of the dynamics of crystal growth from ionic solutions.
Ferritic steels containing copper have been studied as model systems for clusters/precipitate formation in reactor pressure vessel steels. The samples were aged at 400 °C for 4000 h and subsequently cold rolled to 30% reduction at room temperature. The microstructural characteristics of the samples were analyzed using high-resolution transmission electron microscopy. Direct evidence was found that the fivefold twinning occurs via simultaneous emission of two Shockley partial dislocations from two particular α-Fe/Cu interfaces, and then the pileup tips of the twofold twin. - Highlights: • Fivefold twin is observed in a Cu-rich precipitate in cold rolled ferritic steels. • A dislocation reaction mechanism for the fivefold twin formation is proposed. • Two particular mismatching α-Fe/Cu-rich precipitate interfaces play a critical role.
We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small (with heights of about 1 nm) GaAsxSb1 x nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsxSb1 x nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process.