SEARCH · Search NASA

Results for “indium oxide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

All sources NASA NTRS DOE OSTI

DOE OSTI2024

Orientational analysis of atomic pair correlations in nanocrystalline indium oxide thin films

The application of grazing-incidence total X-ray scattering (GITXS) for pair distribution function (PDF) analysis using >50 keV X-rays from synchrotron light sources has created new opportunities for structural characterization of supported thin films with high resolution. Compared with grazing-incidence wide-angle X-ray scattering, which is only useful for highly ordered materials, GITXS/PDFs expand such analysis to largely disordered or nanostructured materials by examining the atomic pair correlations dependent on the direction relative to the surface of the supporting substrate. A characterization of nanocrystalline In 2 O 3 -derived thin films is presented here with in-plane-isotropic and out-of-plane-anisotropic orientational ordering of the atomic structure, each synthesized using different techniques. The atomic orientations of such films are known to vary based on the synthetic conditions. Here, an azimuthal orientational analysis of these films using GITXS with a single incident angle is shown to resolve the markedly different orientations of the atomic structures with respect to the planar support and the different degrees of long-range order, and hence, the terminal surface chemistries. It is anticipated that orientational analysis of GITXS/PDF data will offer opportunities to extend structural analyses of thin films by providing a means to qualitatively determine the major atomic orientation within nanocrystalline and, eventually, non-crystalline films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2024

Space Exposure of Indium Tin Oxide Coatings

Indium tin oxide (ITO) coated thermal control samples were exposed to the space environment as part of the Materials International Space Station Experiment-9 (MISSE-9) mission to assess the impact of low Earth orbit (LEO) on material properties. Six samples were flown as part of the Polymers and Composites Experiment-1 (PCE-1): four samples of ITO coated silver Teflon (FEP/Ag/Inconel), and two samples of ITO coated Kapton HN (Kapton HN/Al). Samples were flown in ram, wake and zenith directions and were directly exposed to space for 0.77 years (ram) or 0.54 years (wake and zenith). Flight and corresponding control samples were tested post flight for changes in optical properties (total reflectance and solar absorptance) and film electrical resistance. In addition, the atomic oxygen erosion yield (E y ) was determined for each flight sample. This paper provides details on the flight sample materials, the mission space exposure and the postflight test results. Indium tin oxide coated samples were not significantly damaged by the LEO exposures. The atomic oxygen E y values were very low and the solar absorptance changed very little. Sheet resistance of the ITO coated Kapton HN/Al doubled after ram exposure, however its final resistance of 10,820 Ohm/square is believed to be low enough to enable dissipation of electrostatic charges. Sheet resistance measurements for the ITO coated FEP/Ag/Inconel sheets suffered from high levels of scatter, with some resistance measurements higher than 370,000 Ohms/square.

Atomic oxygen↗

DOE OSTI2021

Potential dependent spectroelectrochemistry of electrofluorogenic dyes on indium–tin oxide

Indium-tin oxide (ITO) is used in a variety of applications due to its electrical conductivity and optical transparency. Moreover, ITO-coated glass is a common working electrode for spectroelectrochemistry. Thus, the ITO substrates should exhibit well-understood spectroscopic characteristics. Here, we report anomalous potential-dependent luminescence emission from three structurally dissimilar electrofluorogenic probe on ITO-coated glass. The three probes, flavin mononucleotide, resorufin, and Nile blue, show the expected fluorescence modulation between their oxidized, emissive forms and their reduced, nonfluorescent forms at low laser irradiance and/or high concentrations. However, at high irradiance and/or low concentration, the emission intensity increases at reducing potentials, contrary to expectations. In addition, a strong interplay between probe molecule concentration and laser irradiance is observed. We attribute the anomalous behavior to a combination of (1) irradiance-dependent ITO carrier dynamics, and (2) interaction of the fluorescent probe with ITO at reducing potentials resulting in a charge transfer state with altered emission behavior. Thus, the potential- and irradiance-dependent behavior of ITO and the resulting charge transfer state may not only interfere with the observation of potential-dependent fluorescence from redox probes but can completely reverse the polarity of the potential-dependent luminescence, especially at high irradiance and low concentration.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2018

Solar Radiation Control and Energy Harvesting Film

Some implementations provide a device (e.g., solar panel) that includes an active layer and a solar absorbance layer. The active layer includes a first N-type layer and a first P-type layer. The solar absorbance layer is coupled to a first surface of the active layer. The solar absorbance layer includes a polymer composite. In some implementations, the polymer composite includes one of at least metal salts and/or carbon nanotubes. In some implementations, the active layer is configured to provide the photovoltaic effect. In some implementations, the active layer further includes a second N-type layer and a second P-type layer. In some implementations, the active layer is configured to provide the thermoelectric effect. In some implementations, the device further includes a cooling layer coupled to a second surface of the active layer. In some implementations, the cooling layer includes one of at least zinc oxides, indium oxides, and/or carbon nanotubes.

Kang, Jin Ho↗

DOE OSTI2021

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

Not Available

36 MATERIALS SCIENCE↗

NASA NTRS1971

Vaporization of some group IIIA metal-metal oxide systems - Mass spectrometric identification of indium gallium oxides /InGaO and InGaO2/ and gallium aluminum oxide /GaAlO/

Studying vaporization of indium-gallium oxide, and gallium-aluminum oxide by Knudsen effusion mass spectroscopy

Kohl, F. J.↗

DOE OSTI2021

Highly dispersed Pt atoms and clusters on hydroxylated indium tin oxide: a view from first-principles calculations

Supported single-atom and small cluster catalysts have become highly popular in heterogeneous catalysis. These catalysts can maximize the metal atom utilization while still showing superior catalytic performance. One of the main challenges in producing these small cluster catalysts is their low binding strength with the support, which causes these small clusters to sinter into larger nanoparticles. We have used first-principles simulations to study small Pt n ( n : 1,2,3) clusters on indium oxide, tin doped indium oxide, and hydroxylated tin doped indium oxide. We report that the Pt n cluster is stabilized in the presence of tin and that this is especially the case for Pt single atoms on the hydroxylated indium tin oxide support, which are anchored to the support via the hydroxyl group. On this support, the Pt single atoms become more stable than Pt 2 and Pt 3 clusters, hence decreasing sintering. These findings provide a promising way to design single-atom catalysts on electrically conducting supports for electrocatalytic applications and to better understand how functional groups on supports can increase the adhesion of cluster catalysts.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Influence of oxygen on the optical and electrical properties of magnetron-sputtered indium tin oxide thin films at ambient temperature

Indium Tin Oxide (ITO) thin films are commonly used as transparent conductive layers in the production of solar cells. ITO films are typically heat-treated at temperatures exceeding 200 °C after magnetron sputtering to optimize the physical, optical, and electrical characteristics for photovoltaic devices. Here, this high temperature heating procedure greatly limits the use of potential substrates, particularly those comprised of low-temperature-rated polymers. Herein, we examine the physical, optical, and electrical transport effects of oxygen:argon plasmas during radio frequency magnetron sputtering of ITO on glass and flexible polymer surfaces without subsequent heat treatment. ITO thin films were characterized via sheet resistance testing, UV-Vis spectroscopy, X-ray diffraction, and scanning electron microscopy imaging. Sheet resistance measurements revealed an increase in surface resistance with increasing oxygen concentration during sputtering. UV-Vis optical transmittance measurements demonstrated an improvement in optical transmittance with an increase in oxygen concentration reaching a maximum transmittance at an oxygen concentration of 1-2 %. Most importantly, it was discovered that producing bilayers of ITO with pure argon sputtered plasmas followed by oxygen:argon plasmas produced ITO thin films with suitable resistance and transmittance without the need for high temperature post annealing. These results highlight a methodology for the deposition of ITO thin films on temperature sensitive substrates for flexible photovoltaics and low-cost module production.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide

Indium-doped cadmium oxide (In:CdO) thin films exhibit tunable epsilon-near-zero (ENZ) modal frequencies across a wide spectral range, bridging the mid-wave and near-infrared (IR). In:CdO thin films are prepared by reactive cosputtering from metallic Cd and In targets using high-power impulse magnetron sputtering (HiPIMS) and radio frequency sputtering, respectively. Using this approach, CdO thin films with carrier concentrations ranging from 2.3 × 10 19 to 4.0 × 10 20 cm –3 and mobilities ranging from 300 to 400 cm 2 /Vs are readily achieved. UV-VIS absorption spectra are used to measure optical bandgap, revealing a Burstein-Moss shift of 0.58 eV across the doping range investigated. In this work, optical measurements demonstrate the tunability of near-perfect plasmonic ENZ absorption across the mid-wave and into the near-IR spectral ranges by controlling the carrier concentration through doping, while tuning the film thickness for impedance matching. In comparison to other dopants that can be introduced to HiPIMS-deposited CdO, In offers the largest range of carrier concentrations while maintaining high mobility, thus allowing for the widest accessibility of the IR spectrum of a single plasmonic material grown by sputtering.

36 MATERIALS SCIENCE↗

NASA NTRS1976

Efficient photovoltaic heterojunctions of indium tin oxides on silicon

Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60

Dubow, J. B.↗

NASA NTRS2008

Patterning of Indium Tin Oxide Films

A relatively rapid, economical process has been devised for patterning a thin film of indium tin oxide (ITO) that has been deposited on a polyester film. ITO is a transparent, electrically conductive substance made from a mixture of indium oxide and tin oxide that is commonly used in touch panels, liquid-crystal and plasma display devices, gas sensors, and solar photovoltaic panels. In a typical application, the ITO film must be patterned to form electrodes, current collectors, and the like. Heretofore it has been common practice to pattern an ITO film by means of either a laser ablation process or a photolithography/etching process. The laser ablation process includes the use of expensive equipment to precisely position and focus a laser. The photolithography/etching process is time-consuming. The present process is a variant of the direct toner process an inexpensive but often highly effective process for patterning conductors for printed circuits. Relative to a conventional photolithography/ etching process, this process is simpler, takes less time, and is less expensive. This process involves equipment that costs less than $500 (at 2005 prices) and enables patterning of an ITO film in a process time of less than about a half hour.

Immer, Christopher↗

DOE OSTI2026

Nanocrystal-to-Ligand Interfacial Thermal Transport: Plasmonic Indium Tin Oxide to Perylene Diimide Adsorbates

The generation and dissipation of heat in nanocrystals upon optical excitation is a process which may either limit or enhance their performance in certain applications. Using transient absorption spectroscopy, we tracked the flow of heat from plasmonic tin-doped indium oxide (ITO) nanocrystals to surface adsorbed perylenediimide (PDI) molecules upon excitation of the ITO near-infrared plasmon resonance. Here, we rationalize the derivative line shapes observed in the transient absorption bleach features are the result of thermal transfer from the ITO core to surface ligands based on temperature-dependent static absorption studies of the PDI molecules adsorbed on plasmonic ITO. Through a series of pump power dependent measurements, we demonstrate that the PDI heating time is largely fluence independent at the powers measured, while the overall recovery time increases. Elucidating thermal transfer rates at the nanocrystal and organic ligand interface is key for applications such as plasmon mediated photocatalysis, where heating may obfuscate hot carrier transfer processes.

heat dissipation↗

DOE OSTI2020

Electron Beam Infrared Nano-Ellipsometry of Individual Indium Tin Oxide Nanocrystals

Leveraging recent advances in electron energy monochromation and aberration correction, we record the spatially resolved infrared plasmon spectrum of individual tin-doped indium oxide nanocrystals using electron energy-loss spectroscopy (EELS). Both surface and bulk plasmon responses are measured as a function of tin doping concentration from 1–10 atomic percent. Furthermore, these results are compared to theoretical models, which elucidate the spectral detuning of the same surface plasmon resonance feature when measured from aloof and penetrating probe geometries. We additionally demonstrate a unique approach to retrieving the fundamental dielectric parameters of individual semiconductor nanocrystals via EELS. This method, devoid from ensemble averaging, illustrates the potential for electron-beam ellipsometry measurements on materials that cannot be prepared in bulk form or as thin films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide

The field-effect electron mobility of aqueous solution-processed indium gallium oxide (IGO) thin-film transistors (TFTs) is significantly enhanced by polyvinyl alcohol (PVA) addition to the precursor solution, a >70-fold increase to 7.9 cm 2 /Vs. To understand the origin of this remarkable phenomenon, microstructure, electronic structure, and charge transport of IGO:PVA film are investigated by a battery of experimental and theoretical techniques, including In K-edge and Ga K-edge extended X-ray absorption fine structure (EXAFS); resonant soft X-ray scattering (R-SoXS); ultraviolet photoelectron spectroscopy (UPS); Fourier transform-infrared (FT-IR) spectroscopy; time-of-flight secondary-ion mass spectrometry (ToF-SIMS); composition-/processing-dependent TFT properties; high-resolution solid-state 1 H, 71 Ga, and 115 In NMR spectroscopy; and discrete Fourier transform (DFT) analysis with ab initio molecular dynamics (MD) liquid-quench simulations. The 71 Ga{ 1 H} rotational-echo double-resonance (REDOR) NMR and other data indicate that PVA achieves optimal H doping with a Ga···H distance of ~3.4 Å and conversion from six- to four-coordinate Ga, which together suppress deep trap defect localization. This reduces metal-oxide polyhedral distortion, thereby increasing the electron mobility. Finally, hydroxyl polymer doping thus offers a pathway for efficient H doping in green solvent-processed metal oxide films and the promise of high-performance, ultra-stable metal oxide semiconductor electronics with simple binary compositions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1998

High Temperature - Thin Film Strain Gages Based on Alloys of Indium Tin Oxide

A stable, high temperature strain gage based on reactively sputtered indium tin oxide (ITO) was demonstrated at temperatures up to 1050 C. These strain sensors exhibited relatively large, negative gage factors at room temperature and their piezoresistive response was both linear and reproducible when strained up to 700 micro-in/in. When cycled between compression and tension, these sensors also showed very little hysteresis, indicating excellent mechanical stability. Thin film strain gages based on selected ITO alloys withstood more than 50,000 strain cycles of +/- 500 micro-in/in during 180 hours of testing in air at 1000 C, with minimal drift at temperature. Drift rates as low as 0.0009%/hr at 1000 C were observed for ITO films that were annealed in nitrogen at 700 C prior to strain testing. These results compare favorably with state of the art 10 micro-m thick PdCr films deposited by NASA, where drift rates of 0.047%/hr at 1050 C were observed. Nitrogen annealing not only produced the lowest drift rates to date, but also produce the largest dynamic gage factors (G = 23.5). These wide bandgap, semiconductor strain sensors also exhibited moderately low temperature coefficients of resistance (TCR) at temperatures up to 1100 C, when tested in a nitrogen ambient. A TCR of +230 ppm/C over the temperature range 200 C < T < 500 C and a TCR of -469 ppm/C over the temperature range 600 C < T < 1100 C was observed for the films tested in nitrogen. However, the resistivity behavior changed considerably when the same films were tested in oxygen ambients. A TCR of -1560 ppm/C was obtained over the temperature range of 200 C < T < 1100 C. When similar films were protected with an overcoat or when ITO films were prepared with higher oxygen contents in the plasma, two distinct TCR's were observed. At T < 800 C, a linear TCR of -210 ppm/C was observed and at T > 800 C, a linear TCR of -2170 DDm/C was observed. The combination of a moderately low TCR and a relatively large gage factor make these semiconducting oxide films promising candidates for the active strain elements in high temperature thin film strain gages, particularly in applications where static strain measurement is desired.

Gregory, Otto J.↗

NASA NTRS1972

Ultraviolet and charged particle irradiation of proposed solar cell coverslide materials and conductive coatings for the Helios spacecraft

Coverslide materials consisting of Corning 7940 fused silica, multilayers of titanium and manganese oxides (blue reflector), and indium oxide (conductive-coating) were exposed to 16 UVSC up to 800 EUVSH in vacuum. Slight changes in optical transmittance and optical absorptance were found in the (200-360) millimicron regions of the fused silica and conductive coating respectively. Exposure to 4 KeV protons and 4.5 KeV electrons in vacuum, produced decreases of several percent in transmittance, (200-360) millimicron region in the fused silicas after total fluxes less or = 10 to the 14th power particles/sq cm. Sheet resistance of the conductive coating increased above 1.0 kilo-ohm/square after a total flux less or = 10 to the 14th power particles/sq cm. Solar cells with coverglasses utilizing the indium oxide conductive coating were exposed to 1 Mev electrons and 1 Mev protons in air and in vacuum. Total fluxes ranged from 10 to the 11th power particles/sq cm to 10 to the 15th power particle/sq cm. There was no appreciable degradation in the resistance of the conductive coating during or after these tests.

Fry, J.↗

NASA NTRS1981

Charging control techniques

Transparent conductive thin films of indium oxide and indium-tin oxide were evaluated for their properties to control charge buildup on satellite materials. Both oxide coatings were evaluated for their uniformity, stability, reproducibility and characteristics on various substrate materials such as FEP Teflon, Kapton, and glass. The process development toward optimization and characterization of these thin semiconductor oxide coatings and the evaluation on large sizes performed for qualification for use on thermal control satellite materials is described. The materials have been characterized in multiple energy electron plasma environment and at low temperatures. All radiation measurements of the coatings under simulated substorm conditions have exhibited the characteristics of stable charge control. Measurement of surface potential during and after irradiation by electrons up to 30 KeV and ionizing gamma radiation show an effective stable grounding surface.

Schmidt, R. E.↗

DOE OSTI2020

Surface Acoustic Wave H2 and O2 Sensors Based on Conducting Metal Oxides/Langasite for Elevated Temperature Applications - presentation

• SAW reflective delay line devices were designed and successfully fabricated on Langasite by patterning platinum electrodes.• Fabricated devices successfully tested up to 500°C for temperature sensing applications.• Indium oxide (IO) and indium tin oxide (ITO) sensing layers were developed on the SAW devices using sputtering and sol-gel method.• IO- and ITO-functionalized langasite SAW reflective delay line devices were used for sensing H2 and O2 at 350°C.

Mao, Elizabeth↗