Search NASA⌕ Search

SEARCH · Search NASA

Results for “interface barrier”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Evidence for ionization damage in mid-wave infrared nBn detectors

The effects of 63 MeV proton and 60Co gamma irradiation on the operation of 4.3 μm cutoff nBn photodetectors are demonstrated separately, and both are shown to yield a total ionizing dose (TID) effect. The effect is shown here in an InAsSbBi nBn detector and has been observed in other bulk alloy nBn detectors, and is unusual as it is notably absent in superlattice nBn detectors. The non-antireflection coated detectors exhibit a pre-radiation quantum efficiency of 17% at 3.3 μm wavelength and a dark current density of 50 μA/cm2, or roughly 300× the Rule 07 expectation, at their ideal operating voltage of −0.4 V bias at 150 K. Step-wise proton irradiation and in situ measurement indicate that the dark current increases to about 400× Rule 07 at the highest proton dose level of 150 krad(Si) (9.10 × 1011 p+/cm2), while the quantum efficiency is degraded at a relatively faster rate than the majority of analogous detectors characterized by our lab. Both the photocurrent and dark current are also shown to exhibit a turn-on voltage magnitude reduction of 100 mV following either gamma or proton irradiation, a trend which is attributable to negative trapped charge at the barrier interface (TID effect). This theory is further supported by an observed capacitance density magnitude reduction with dose and affirmed with Silvaco TCAD simulations. Following both proton exposure and subsequent anneal and gamma exposure and subsequent anneal; dark current, photocurrent, and CV all approach their pre-radiation baseline values.

Physics↗
DOE OSTI2025

Low leakage current in heteroepitaxial Al 0.7 Sc 0.3 N ferroelectric films on Ga N

Wurtzite ( Al , Sc ) N ferroelectrics are attractive for microelectronics applications due to their chemical and structural compatibility with wurtzite semiconductors, such as Ga N and ( Al , Ga ) N . However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Here, we demonstrate low leakage current in epitaxial Al 0.7 Sc 0.3 N films on Ga N with well-saturated ferroelectric hysteresis loops that are orders of magnitude lower (i.e., 0.07 A cm − 2 ) than previously reported films (1–19 A cm − 2 ) having similar or better structural characteristics. We also show that, for these high-quality epitaxial ( Al , Sc ) N films, structural quality (edge and screw dislocations), as measured by diffraction techniques, is not the dominant contributor to leakage. Instead, the small leakage in our films is limited by thermionic emission across the interfaces, which is distinct from the large leakage due to trap-mediated bulk transport in the previously reported ( Al , Sc ) N films. To support this conclusion, we show that Al 0.7 Sc 0.3 N on lattice-matched In 0.18 Ga 0.82 N buffers with improved structural characteristics but higher interface roughness exhibit increased leakage characteristics. This demonstration of low leakage current in heteroepitaxial ( Al , Sc ) N films and understanding of the importance of interface barrier and surface roughness can guide further efforts toward improving the reliability of wurtzite ferroelectric devices. Published by the American Physical Society 2025

36 MATERIALS SCIENCE↗
DOE OSTI2018

Approaches toward lithium metal stabilization

Historically, batteries with lithium metal anodes have been a hazard, as the lithium becomes rough and eventually finely divided during cycling. The promise of higher energy density, however, continues to drive the search for novel approaches to manage this light and reactive material. Significant improvement has been achieved by designing new liquid-electrolyte compositions and interface barriers to stabilize the lithium in traditional batteries, but it is clear that solid-state batteries ensure a higher level of safety and perhaps higher energy density and lifetimes. The materials challenge then is to fabricate a cost-effective solid electrolyte that effectively maintains lithium as a dense uniform metal layer. This review paper describes the ideal cycling behavior of lithium and progress toward this goal of a solid electrolyte using glassy, ceramic, polymer, and composite electrolytes, as well as the challenges that continue to arise toward long-term, high-rate, and efficient cycling of lithium metal.

25 ENERGY STORAGE↗
NASA NTRS1976

Fabrication process development of SiC/superalloy composite sheet for exhaust system components

A chemical compatibility study was conducted between SiC filament and the following P/M matrix alloys: Waspaloy, Hastelloy-X, NiCrAlY, Ha-188, S-57, FeCrAlY, and Incoloy 800. None of the couples demonstrated sufficient chemical compatibility to withstand the minimum HIP consolidation temperatures (996 C) or intended application temperature of the composite (982 C). However, Waspaloy, Haynes 188, and Hastelloy-X were the least reactive with SiC of the candidate alloys. Chemical vapor deposited tungsten was shown to be an effective diffusion barrier between the superalloy matrix and SiC filament providing a defect-free coating of sufficient thickness. However, the coating breaks down when the tungsten is converted into intermetallic compounds by interdiffusion with matrix constituents. Waspaloy was demonstrated to be the most effective matrix alloy candidate in contact with the CVD tungsten barrier because of its relatively low growth rate constant of the intermediate compound and the lack of formation of Kirkendall voids at the matrix-barrier interface. Fabrication methods were developed for producing panels of uniaxial and angle ply composites utilizing CVD tungsten coated filament.

Cornie, J. A.↗
NASA NTRS2007

Strategies to Mitigate Ammonia Release on the International Space Station

International Space Station (ISS) is crucial to its continuous operation. Off-nominal situations can arise from virtually any aspect of ISS operations. One situation of particular concern is the inadvertent release of a chemical into the ISS atmosphere. In sufficient quantities, a chemical release can render the ISS uninhabitable regardless of the chemical s toxicity as a result of its effect on the hardware used to maintain the environment. This is certainly true with system chemicals which are integral components to the function and purpose of the system. Safeguards, such as design for minimum risk, multiple containment, hazard assessments, rigorous safety reviews, and others, are in place to minimize the probability of a chemical release to the ISS environment thereby allowing the benefits of system chemicals to outweigh the risks associated with them. The thermal control system is an example of such a system. Heat generated within the ISS is transferred from the internal thermal control system (ITCS) to the external thermal control system (ETCS) via two, single-barrier interface heat exchangers (IFHX). The ITCS and ETCS are closed-loop systems which utilize water and anhydrous ammonia, respectively, as heat-transfer fluids. There is approximately 1200 lbs. (208 gallons) of anhydrous ammonia in the ETCS circulating through the two heat exchangers, transferring heat from the ITCS water lines. At the amounts present in the ETCS, anhydrous ammonia is one system chemical that can easily overwhelm the station atmosphere scrubbing capabilities and render the ISS uninhabitable in the event of a catastrophic rupture. Although safeguards have certainly minimized the risk of an ammonia release into the Station atmosphere, credible release scenarios and controls to manage these scenarios are examined.

Macatangay, Ariel V.↗
NASA NTRS2019

Temperature Mapping at the Thermal Barrier Coating/Bond Coat Interface by Luminescence Lifetime Imaging Using Integrated Erbium-Doped Sublayers

Full-field temperature mapping of thermal barrier coated components by either infrared thermography or phosphor thermometry has been limited to surface temperature mapping even though temperature mapping at the thermal barrier coating (TBC)/bond coat interface is more relevant for evaluating the TBC thermal protection performance. For the first time, 2D temperature mapping at the TBC/bond coat interface has now been achieved by full-field luminescence lifetime imaging measurements of emission from a thin erbium-doped yttria-stabilized zirconia (YSZ) sensing layer integrated into the TBC below the overlying undoped YSZ. This new capability was applied to map temperatures at the TBC/bond coat interface for TBC-coated specimens subjected to a heat flux produced by the NASA Glenn high heat flux laser facility. In particular, thermal gradients at the TBC/bond coat interface were mapped in regions where the TBC was subjected to erosion or to mechanically induced delamination crack propagation. Finally, temperature mapping of the TBC/bond coat interface was used to evaluate the effectiveness of surface air film cooling at the TBC/bond coat interface.

Eldridge, Jeffrey I.↗
DOE OSTI2025

First-Principles Assessment of ZnTe and CdSe as Prospective Tunnel Barriers at the InAs/Al Interface

Majorana zero modes are predicted to emerge in semiconductor/ superconductor interfaces, such as InAs/Al. Majorana modes could be utilized for fault tolerant topological qubits. However, their realization is hindered by materials challenges. The coupling between the superconductor and the semiconductor may be too strong for Majorana modes to emerge, due to effective doping of the semiconductor by the metallic contact. This could be mediated by adding a tunnel barrier of controlled thickness. We use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO), to assess ZnTe and CdSe as prospective tunnel barriers for the InAs/Al interface. The results of DFT +U(BO) for ZnTe are validated by comparison to angle resolved photoemission spectroscopy (ARPES). We then study bilayer interfaces of the three semiconductors with each other and with Al, as well as trilayer interfaces with a varying number of ZnTe or CdSe layers inserted between InAs and Al. We find that 16 atomic layers of either material completely insulate the InAs from metal induced gap states (MIGS). However, ZnTe and CdSe differ significantly in their band alignment, such that ZnTe forms an effective barrier for electrons, whereas CdSe forms a barrier for holes. Because of Fermi level pinning in the conduction band at the interface, only electron transport is relevant for InAs-based Majorana devices. Therefore, ZnTe is the better choice. Based on the results of our simulations, we suggest conducting experiments with ZnTe barriers in the thickness range of 6–18 atomic layers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Interface formation and Schottky barrier height for Y, Nb, Au, and Pt on Ge as determined by hard x-ray photoelectron spectroscopy

Development of a robust, thin, hole-blocking (n+) contact on high purity germanium (HPGe) has been the main challenge in the development of Ge-based radiation sensors. Yttrium has been reported to be a viable hole-blocking contact on HPGe, and detectors with low leakage have been fabricated. Niobium has also been considered as a potential hole-blocking contact due to its low work function. Here, we investigate interface chemistry and the Schottky barrier height of Y and Nb, as well as electron-blocking contacts Au and Pt, on Ge(100) surfaces using hard x-ray photoelectron spectroscopy. We find a barrier height of 1.05 ± 0.10 eV for Y/HPGe, confirming the formation of a hole-blocking barrier. For Nb/HPGe, the barrier height of 0.13 ± 0.10 eV demonstrates that the interface is not hole-blocking. The Schottky barrier of Au and Pt was found to be 0.45 ± 0.10 and 0.51 ± 0.10 eV, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2025

First-Principles Studies of Tritium Species Diffusivity Across the Interfaces of Ni-NiZr Alloy-Zircaloy-4

A tritium producing assembly, also known as tritium producing burnable absorber rods (TPBARs), consists of a metal getter tube located between the cladding and γ-LiAlO2 pellets. The metal getter tube is composed of a nickel (Ni) layer coated on Zircaloy-4. The getter assembly is used to capture tritium (3H) species (mainly 3H2 and 3H2O) generated from γ-LiAlO2 pellets during irradiation. Exploring 3H species (3H2, 3H2O) dissociation on the Ni surface and diffusion in the Ni layer and across the interface of Ni-plated Zircaloy-4 getters can provide insights on tritium transport and retention in the pellets and the getter materials. . In FY25, based on the ideal interface model of Ni-Zircaloy-4 generated in FY24, we will further explore the diffusion pathways of 3H across such Ni-ZrNi-alloy layer-Zircalory-4 interfaces under different conditions, including with oxide/hydroxide clusters on the Ni layer, and impurities located in ZrNi-alloy and Zircalory-4 layers. Due to the size limitation of DFT simulation, we will separate the 3-layer system into 3 sub-systems: Ni-ZrNi interface, ZrNi alloy layer, ZrNi-alloy-Zircaloy-4 interface, and simulate the diffusion barriers for tritium.

diffusion barrier↗
DOE OSTI2021

Theoretical Insights for Improving the Schottky-Barrier Height at the Ga2O3/Pt Interface

In this work, we study the Schottky-barrier height (SBH) at the junction between ..beta..-Ga2O3 and platinum, a system of great importance for the next generation of high-power and high-temperature electronic devices. Specifically, we obtain interfacial atomic structures at different orientations using our structure-matching algorithm and compute their SBH using electronic structure calculations based on hybrid density-functional theory.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,P↗
DOE OSTI2021

Controlling the Schottky Barrier at the Pt/TiO 2 Interface by Intercalation of a Self-Assembled Monolayer with Oriented Dipole Moments

Interfacial Schottky barriers can impact the catalytic function of Pt on TiO 2 . Since the electronic structure is characteristic of each material, it may be advantageous to tailor the interfacial Schottky barrier by the addition of adsorbed layers. Here, we show that the Schottky barrier in Pt/TiO 2 can be mitigated by the insertion of self-assembled monolayers (SAM) of carboranethiols that possess an oriented dipole moment. A Pt substrate with the SAM on which TiO 2 nanoparticles are deposited is used to that effect. Kelvin Probe Force Microscopy shows thatm-9-carboranethiolate SAM with perpendicular dipole moments decreases the potential difference between TiO 2 and Pt by ~0.3 eV due to the interfacial electric field of the SAM. Furthermore, our findings open new opportunities for tailoring interfacial electronic structures not only in the metal-semiconductor junction, but also the semiconductor heterojunctions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Synchrotron micro-computed tomography analysis of neutron-irradiated U-Mo fuel

The three-dimensional (3D) microstructure of neutron-irradiated uranium-10 wt.% molybdenum (U-10Mo) fuel with a burn-up of 9.8 × 10 21 fissions/cm 3 was characterized using a novel, multi-modal synchrotron micro-computed tomography approach combining propagation-based phase-contrast enhanced and absorption contrast techniques. The porosity development, porosity interconnectedness, swelling, composition, local thickness of the zirconium (Zr) diffusion barrier, and the influence of the fuel–cladding interaction on the local composition and pore morphology, were uniquely determined in 3D. Two cuboids were produced using a focused ion beam-scanning electron microscope at the Zr diffusion barrier–fuel interface and in the bulk fuel. The bulk fuel sample swelled by 53.3 [+9.7/−3.1]%, while the fuel near the Zr–fuel interface swelled by 63.3 [+14.7/−7.2]%. The average local thickness of the Zr diffusion barrier decreased by 53 %, compared to the expected pre-irradiated thickness. Four pore morphology regions were identified initiating parallel to the fuel–Zr interaction region: (1) an interaction layer of suppressed porosity, (2) a layer of elongated and interconnected porosity, (3) a transition zone of low porosity, and (4) a layer of unoriented porosity representative of the bulk fuel behavior. The increase in porosity near the diffusion barrier corresponded to a higher U concentration compared to that in the bulk fuel. The interconnected porosity in the fuel near the diffusion barrier was extensive and oriented parallel to the diffusion barrier, while the bulk fuel had more compact and isolated pore networks. The interaction layer, despite having suppressed porosity, was nearly 100 wt.% U. Porosity suppression at the diffusion barrier corresponds to the expected reduction in radiation-driven diffusion of Xe at the interface despite the anticipated increase in fission product nucleation originating from a higher U concentration. In conclusion, the novel 3D insights of the porosity, swelling, and compositional variations characterized herein can improve the fidelity of fuel performance codes for proliferation-resistant fuels for research and test reactors.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Impact of interface materials on side permeation in indirect encapsulation of organic electronics

This work demonstrates the impact of the contact interface between barrier films and adhesives on the side permeation of moisture into packaged devices. When barrier films are brought into contact with the adhesive layer during indirect encapsulation, permeation along defects at this interface can occur due to the imperfect nature of contact, resulting in the formation of pores. The connected network of pores can act as capillaries and be an alternative pathway for water permeation as opposed to the bulk of the adhesive or edge seal materials used for barrier attachment to the package. The rate of water permeation through the capillaries is governed by surface energies of the materials at the interfaces. Experimental results demonstrate that the rate of water permeation is significantly lowered by using materials with higher contact angles at the interface.

36 MATERIALS SCIENCE↗
NASA NTRS1995

Finding the forest in the trees: The challenge of combining diverse environmental data

It has become increasingly important to conduct interdisciplinary environmental research assessments, both nationally and internationally. For this reason, the Committee for a Pilot Study on Database Interfaces was charged to review and advise on data interfacing activities. The committee used six case studies (1) to identify and understand the most important problems associated with collecting, integrating, and analyzing environmental data from local to global spatial scales and over a very wide range of temporal scales; and (2) to elaborate the common barriers to interfacing data of disparate sources and types. Consistent with the committee's charge, the primary focus was the interfacing of geophysical and ecological data. The case studies used by the committee were: The Impact Assessment Project for Drought Early Warning in the Sahel, The National Acid Precipitation Assessment Program, The H.J. Andrew Experimental Forest Long-Term Ecological Research Site, The Carbon Dioxide Information Analysis Center, The First International Satellite Land Surface Climatology Project (ISLSCP) Field Experiment, and The California Cooperative Oceanic Fisheries Investigation. The committee derived a number of lessons from the case studies, and these lessons are summarized at the end of each case study and analyzed in the last chapter. Some are generic in nature; others are more specific to a discipline or project. The conclusions and recommendations are based on the committee's analysis of the case studies and additional research. They are organized according to four major areas of barriers or challenges to the effective interfacing of diverse environmental data. In the final section the committee offers a set of broadly applicable principles (Ten Keys to Success) that can be used by scientists and data managers in planning and conducting interfacing activities.

Source record↗
DOE OSTI2022

Monocrystalline 1.7-eV MgCdTe solar cells

Monocrystalline 1.7-eV Mg 0.13 Cd 0.87 Te/Mg x Cd 1-x Te (x > 0.13) double-heterostructure (DH) solar cells with varying Mg composition in the barrier layers are grown by molecular beam epitaxy. Furthermore, a Mg 0.13 Cd 0.87 Te/Mg 0.37 Cd 0.63 Te DH solar cell featuring abrupt interfaces between barriers and absorber and the addition of a SiO 2 anti-reflective coating demonstrates open-circuit voltage (V OC ), short-circuit current density (J SC ), fill factor (FF), and device active-area efficiencies up to 1.129 V, 17.3 mA/cm 2 , 77.7% and 15.2%, respectively. The V OC and FF vary oppositely with the Mg x Cd 1-x Te barrier height indicating an optimal design of the MgCdTe DHs as a tradeoff between carrier confinement and carrier transport. Temperature-dependent V OC measurements reveal the majority of carrier recombination in the devices occurs outside the DHs, in the a-Si:H hole-contact layer and at the interface between the a-Si:H layer and the Mg x Cd 1-x Te top barrier at room temperature. Simulation results for the device with the highest efficiency show that the p-type a-Si:H layer and Mg 0.37 Cd 0.63 Te top barrier contribute 1.3 mA/cm 2 and 2.4 mA/cm 2 J SC loss, respectively.

14 SOLAR ENERGY↗
DOE OSTI2018

TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature

The effect of high-temperature annealing on tungsten (W) films deposited on silicon carbide (SiC) with and without a titanium nitride (TiN) diffusion barrier was examined as a function of time. Evolutions in phase composition, surface morphology, and roughness from annealing at 1273 K were investigated for up to 24 h. Without a TiN diffusion barrier, solid state reactions between the W film and SiC substrate led to the formation of W 5 Si 3 , W 2 C, and WC species and the rise of an inhomogeneous surface structure that was initially web-like and later discontinuous. Severe roughening on the order of the initial film thickness was observed. Incorporation of a 100 nm TiN diffusion barrier suppressed the formation of W 5 Si 3 and W 2 C and only trace WC could be detected due to species diffusion through TiN grain boundaries. Changes in the surface structure and roughness were minimal. Our results warrant consideration of TiN as an effective diffusion barrier for W on SiC systems where structural stability at high temperatures is highly desired.

36 MATERIALS SCIENCE↗