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At least 37 records · Page 2

Controlled semiconductor quantum dot fabrication utilizing focus ion beam

In this project, we experimented the focused ion beam (FIB) based fabrications of semiconductor quantum dots (QDs) by using metal nano particles (NPs) (e.g., Al) on semiconductor as a template and by means of the FIB induced direct metal-to-QD conversion. We have examined effect of the experimental conditions, including Ga + ion energy and dose as well as substrate temperature. The results of experiments have shown AlGaSb QD formation on GaSb substrate can be achieved under certain conditions but there are many challenges about the techniques, including compositional nonuniformity of the QDs formed, partial conversion of the metal NP to QD, and high defect concentration in the QDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

High–Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

36 MATERIALS SCIENCE↗

Plasma Focused Ion Beam Milling of High-Aspect-Ratio Holes in Diamond

Plasma focused ion beam (PFIB) technology has a great potential for applications requiring rapid micro-machining of high-aspect-ratio features. Here, we use 30-keV Ar, Xe, and O 2 ion beams to study PFIB milling of high-aspect-ratio circular holes in polycrystalline diamond. Our results show that Xe and O 2 ion beams have the highest milling efficiency for low-aspect-ratio and high-aspect-ratio hole milling, respectively. Each ion beam species produces holes with its characteristic shape and wall surface morphology. In conclusion, based on these results, we demonstrate a “hybrid” hole milled in a two-step process with Xe and O 2 ion beams with the geometry and wall morphology attractive for the attachment of a fuel fill tube to the inertial confinement fusion capsule.

ICF targets↗

Rethinking radiation effects in materials science using the plasma-focused ion beam

This work demonstrates the viability of using a plasma-focused ion beam (PFIB) as a new platform to carry out radiation effects studies in solids. While materials subjected to irradiation in either nuclear reactors or energetic particle accelerators experience limitations with respect to inaccuracies in both flux measurements and lack of precise control of irradiation areas, we demonstrate a new irradiation technique that allows the exposure of a single specimen in multiple areas, at multiple doses, and in site-specific dependencies - all with flux variations on the order of only 1%. This versatile technique also allows materials to be exposed to significantly higher irradiation dose rates than conventional accelerators. To validate the new methodology, we selected the classical example of ion-beam-induced amorphization of pure single-crystal Si. By pioneering the use of the PFIB for radiation effects studies in materials science, we were able to exploit, in both micro- and nanometer-sized detail, the differences in electron image contrast arising from crystalline versus amorphous solid-state phases in classical semiconductors subjected to irradiation, thus providing new insights on amorphization mechanisms. This methodology opens new research frontiers at the fringe of materials science with promising applications beyond the scope of materials at extremes such as in nanopatterning, nanodevices and nanoarchitectonics.

36 MATERIALS SCIENCE↗

Toward Automated Plasma Focus Ion Beam Instrument Calibration for Materials Processing [Poster]

To accelerate the transition to autonomous focused ion beam (FIB) microscopy, we require an objective figure of merit (FOM) for assessing calibration. For our purposes, these FOMs related to beam astigmatism, quad, and focus. Intelligent calibration integrated into scripted workflows will enable fully automated sample preparation workflows that produce higher quality samples with less operator time.

97 MATHEMATICS AND COMPUTING↗

Effects of Focused Ion Beam Lithography on La 2– x Sr x CuO 4 Single Crystals

Focused ion beam (FIB) milling is a mask-free lithography technique that allows the precise shaping of 3D materials on the micron and sub-micron scale. The recent discovery of electronic nematicity in La 2–x Sr x CuO 4 (LSCO) thin films triggered the search for the same phenomenon in bulk LSCO crystals. With this motivation, we have systematically explored FIB patterning of bulk LSCO crystals into micro-devices suitable for longitudinal and transverse resistivity measurements. We found that several detrimental factors can affect the result, ultimately compromising the possibility of effectively using FIB milling to fabricate sub-micrometer LSCO devices, especially in the underdoped regime.

36 MATERIALS SCIENCE↗

Optical interference for the guidance of cryogenic focused ion beam milling beyond the axial diffraction limit

Cryogenic focused ion beam (Cryo-FIB) milling has become a standard step in the cryogenic electron tomography (Cryo-ET) workflow and is required to thin cells to electron-semitransparency. However, this destructive process removes the vast majority of the cellular material and raises a critical question: what thin section should be preserved for Cryo-ET analysis? Using a tri-coincident cryogenic FIB-SEM-LM system, we identify an interferometric optical response that can be used for targeting lamella production to fluorescently labeled structures with accuracy beyond the diffraction limit. Here we demonstrate this approach using synthetic samples of fluorescent beads embedded in micron-scale droplets of amorphous ice. We then apply the approach to capture virions inside host cells. Successful targeting is confirmed by Cryo-ET revealing clusters of virions in intracellular vesicles. The method does not require any fluorescent fiducials or axial registration and can be performed on any fluorescently labeled structure that is visible in widefield fluorescence microscopy.

Cryoelectron microscopy↗

Novel Source Development for Focused Ion Beam Implantation and Irradiation [Slides]

We have demonstrated focused ion implantation for fabrication of single atom devices and nanofabrication. This is a viable solution for prototyping - fast and easy! There is on-going work in diamond, SiN, SiC, hBN, GaN, AlGan, etc. A new liquid metal alloy ion source development is on-going. There is a pathway towards deterministic defect centers in wide bandgap materials using FIB implantation.

43 PARTICLE ACCELERATORS↗

Lithium source for focused ion beam implantation and analysis

In this work, we present a new Li source for focused ion beam applications. Based on an AuSi eutectic alloy, Li is added as an impurity to minimize effects from degradation when exposed to air. We show the source is stable over the course of an hour and spot sizes ≲10 nm can be achieved. The Li beam can achieve hundreds of nanometer ranges in semiconductors with minimal damage being generated along the path length. The source performance is evaluated through a high-resolution ion beam induced charge collection experiment on an Si-based detector. Further application of the source for ion beam analysis is numerically explored; the example investigated is based on probing a semiconductor heterostructure through a Rutherford backscattering experiment, where the Li beam can reveal information that is inaccessible with either low energy or high energy He projectiles used as probes.

36 MATERIALS SCIENCE↗

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Heavy ion, focused x-ray, and pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. It is observed that these transient shape characteristics depend on the source (ion, x-ray, or laser), even when similar amounts of charge are generated. Finally, the observed differences are examined and explained in terms of basic charge collection mechanisms.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Selective patterning of out-of-plane piezoelectricity in MoTe 2 via focused ion beam

Two-dimensional transition-metal dichalcogenides (TMDs) have a strain-sensitive nature and can only exhibit in-plane piezoelectricity, owing to their in-plane inversion symmetry breaking, which limits their practical applications for vertical stimulations. Here, we demonstrated the capability of focused ion beams to create out-of-plane piezoelectricity on multi-layered MoTe 2 . We utilized a focused helium ion beam to selectively pattern the out-of-plane piezoelectricity via defect engineering in a layered MoTe 2 flake. The generated out-of-plane piezoelectricity in the desired area was quantitatively examined using atomic force microscopy, and ion beam irradiation-induced defect formation that gave rise to inversion symmetry breaking was confirmed. These results indicated that the out-of-plane piezoelectricity can be selectively patterned through a focused helium ion beam, and it is expected that this approach can also be applied to other classes of TMDs and can expand the application fields of TMD-based devices.

36 MATERIALS SCIENCE↗

Three-Dimensional Reconstruction of Nb 3 Sn Films by Focused Ion Beam Cross Sectional Microscopy

Niobium has been the material of choice for SRF cavities for several decades due to its formability and superconducting properties. The accelerating gradient of niobium cavities is, however, rapidly approaching a theoretical limit. To achieve higher accelerating gradients a new material is needed that can sustain high fields. Nb 3 Sn is a promising competitor with a higher superconducting transition temperature and a higher critical field than pure niobium. However, Nb 3 Sn is very brittle and cannot be formed readily into a cavity. The main method for creating Nb 3 Sn cavities is to form a Nb 3 Sn film into a niobium surface using a tin vapor-diffusion method. This technique creates a microcrystalline Nb 3 Sn thin film on the inner surface of the cavity. Tin depleted regions are known to form in the film during this process. Previous studies have analyzed these regions using transmission electron microscopy on cross-sectional lamellae prepared by focused ion beam/scanning electron microscope (FIB/SEM). This method does not provide any three-dimensional (3-D) information about the distribution of tin-deficient regions. In this study we employ a focused ion beam tomographic technique to analyze the 3-D structure of the film. Electron dispersive X-ray spectroscopy is used to image the tin concentration of the film in 3-D. Tin-deficient regions are discovered close to the surface of the Nb 3 Sn film.

Viklund, E.↗

Automation of Laser Plasma Focused Ion Beam Microscopy for Next-Gen Energy Materials

Automation can revolutionize the use of ultrafast laser ablation and plasma-focused ion beam (PFIB) techniques for high-throughput, reproducible cross-sectioning and various sample preparation in materials characterization. As these methods become essential for analyzing complex energy materials and next-generation devices, efficient, standardized workflows are needed to minimize variability and enhance precision. This work highlights our advancements in developing automated processes for sample preparation that integrates machine learning, workflow optimization, and large-scale data acquisition to improve efficiency and scalability in applications such as electrolyzers, photovoltaic cells, and microelectronics. To streamline cross-sectioning and lamella fabrication, we have implemented fully automated workflows that standardize laser ablation and PFIB milling sequences. These workflows incorporate pre-programmed protocols for material removal, alignment, and thinning, reducing user intervention and ensuring consistency across different sample types. Machine learning algorithms further enhance automation by predicting optimal milling strategies and adapting parameters based on material properties and sectioning requirements. This approach significantly improves throughput while maintaining the structural integrity of prepared samples for high-resolution imaging and analysis, including transmission electron microscopy. Beyond sample preparation, our automation platform enables the acquisition of large, high-resolution datasets through serial sectioning, image alignment, and 3D reconstruction. These automated routines facilitate multi-scale characterization, capturing structural and compositional details from the nanoscale to the device level. By reducing variability and increasing efficiency, our automated approach enhances defect analysis, failure diagnostics, and process optimization, accelerating advancements in materials research and device engineering.

36 MATERIALS SCIENCE↗

Ionic Liquid Gating of SrTiO 3 Lamellas Fabricated with a Focused Ion Beam

Here, in this work, we combine two previously incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal challenge for this integration is nanometer-scale surface damage inherent to any FIB-based fabrication. We address this by using a sacrificial protective layer to preserve a selected pristine surface. The test case presented here is accumulation of 2D carriers by ionic liquid gating at the surface of a micron-scale SrTiO 3 lamella. Preservation of surface quality is reflected in superconductivity of the accumulated carriers. This technique opens new avenues for realizing electrostatic charge tuning in materials that are not available as large or exfoliatable single crystals, and for patterning the geometry of the accumulated carriers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Fracture toughness of zirconia with a nanometer size notch fabricated using focused ion beam milling

Zirconia with 3 mol% yttria (3Y-TZP) has been used for dental crowns and bridges due to its excellent mechanical behavior. Performing fracture toughness testing on this nanograin material, however, can be a challenge. For reliable results, fracture toughness testing requires an extremely sharp notch in the test specimen that closely approximates a very sharp crack. This study was to investigate an alternative method to produce nanometer-sized notches, which are less than the average grain size of 3Y-TZP, during the preparation of single-edge V-notched beam specimens and report the resulting fracture toughness value. We present a method using focused ion beam (FIB) milling to fabricate nanometer-sized notches in 3Y-TZP. The notch tip is <100 nm wide, which is smaller than the grain size, and is consistent throughout the thickness of the specimen. The FIB-notched specimens show a much reduced average fracture toughness of 5.64 ± 1.14 MPa√m compared to 8.90 ± 0.23 MPa√m for the specimens without FIB-notches. The FIB-milling did not appear to create any monoclinic phase prior to fracture toughness testing. Fractures originated at the FIB-notches, and the notch size can be readily identified post-mortem using a microscope. A considerable amount of tetragonal-to-monoclinic phase transformation was observed throughout the fracture surfaces. FIB milling provides an alternative method to fabricate nanometer-sized notches that are smaller than the grain size of tetragonal zirconia polycrystal. The fracture toughness determined using FIB-notches was ~5.64 MPa√m, smaller than the specimens with V-notches fabricated using saw blades.

36 MATERIALS SCIENCE↗

Novel Focused Ion Beam Liftouts for Spatial Characterization of Spherical Biominerals With Transmission Electron Microscopy

Abstract Focused ion beam (FIB) is frequently used to prepare electron- and X-ray-beam-transparent thin sections of samples, called lamellae. Typically, lamellae are prepared from only a subregion of a sample. In this paper, we present a novel approach for FIB lamella preparation of microscopic samples, wherein the entire cross-section of the whole sample can be investigated. The approach was demonstrated using spherical, porous, and often hollow microprecipitates of biologically precipitated calcium carbonate. The microprecipitate morphology made these biogenic samples more fragile and challenging than materials commonly investigated using FIB lamellae. Our method enables the appropriate orientation of the lamellae required for further electron/X-ray analyses after attachment to the transmission electron microscopy (TEM) grid post and facilitates more secure adhesion onto the grid post. We present evidence of autofluorescence in bacterially precipitated vaterite using this lamella preparation method coupled with TEM selected area diffraction. This innovative approach allows studying biomineralization at the micro to nano scales, which can provide novel insights into bacterial responses to microenvironmental conditions.

47 OTHER INSTRUMENTATION↗

Focused ion beam deposited carbon-platinum nanowires for cryogenic resistive thermometry

The study of thermal effects, both classical and quantum, at cryogenic temperatures requires the use of on-chip, local, high-sensitivity thermometry. Carbon-platinum composites fabricated using focused ion beam (FIB) assisted deposition form a granular structure which is shown in this study to be uniquely suited for this application. Carbon-platinum thermometers deposited using a 24 pA ion beam current have high sensitivities below 1 K, comparable to the best cryogenic thermometers. In addition, these thermometers can be accurately placed to within 10s of nanometers on the chip using a mask-free process. Furthermore, they also have a weak magnetic field dependence, 3% change in resistance with applied magnetic fields from 0 to 8 T. Finally, these thermometers are integrable into a variety of nanoscale devices due to the existing wide spread use of FIB.

77 NANOSCIENCE AND NANOTECHNOLOGY↗