Search NASA⌕ Search

SEARCH · Search NASA

Results for “junction quality”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Effect of Alignment on Transport Properties of Carbon Nanotube/Metallic Junctions

Ballistic and spin coherent transport in single walled carbon nanotubes (SWCNT) are predicted to enable high sensitivity single-nanotube devices for strain and magnetic field sensing. Based upon these phenomena, electron beam lithography procedures have been developed to study the transport properties of purified HiPCO single walled carbon nanotubes for development into sensory materials for nondestructive evaluation. Purified nanotubes are dispersed in solvent suspension and then deposited on the device substrate before metallic contacts are defined and deposited through electron beam lithography. This procedure produces randomly dispersed ropes, typically 2 - 20 nm in diameter, of single walled carbon nanotubes. Transport and scanning probe microscopy studies have shown a good correlation between the junction resistance and tube density, alignment, and contact quality. In order to improve transport properties of the junctions a technique has been developed to align and concentrate nanotubes at specific locations on the substrate surface. Lithographic techniques are used to define local areas where high frequency electric fields are to be concentrated. Application of the fields while the substrate is exposed to nanotube-containing solution results in nanotube arrays aligned with the electric field lines. A second electron beam lithography layer is then used to deposit metallic contacts across the aligned tubes. Experimental measurements are presented showing the increased tube alignment and improvement in the transport properties of the junctions.

Wincheski, Buzz↗
NASA NTRS2019

Turbulence Measurements on a Wing-Fuselage Junction Model for CFD Validation

Current turbulence models, such as those employed in Reynolds-averaged Navier-Stokes CFD, are unable to reliably predict the onset and extent of the three-dimensional separated flow that typically occurs in wing fuselage junctions. To critically assess, as well as to improve upon, existing turbulence models, experimental validation-quality flow field data in the junction region is needed. To that end, NASA has developed a CFD validation experiment for a generic full-span wing-fuselage junction model at subsonic conditions. In this paper, we present and discuss sample results from this effort, with a focus on turbulence measurements in the separated corner flow of the wing-fuselage junction that were obtained with an internally mounted laser Doppler velocimetry (LDV) system. In addition, sample comparisons between the flow field measurements and representative CFD of our test case are presented and here, we highlight some of the key discrepancies.

Kegerise, Michael↗
NASA NTRS2019

An Experimental Investigation of a Wing-Fuselage Junction Model in the NASA Langley 14- by 22-Foot Subsonic Tunnel

Current turbulence models, such as those employed in Reynolds-averaged Navier-Stokes CFD, are unable to reliably predict the onset and extent of the three-dimensional separated flow that typically occurs in wing-fuselage junctions. To critically assess, as well as to improve upon, existing turbulence models, experimental validation-quality flow-field data in the junction region is needed. In this report, we present an overview of experimental measurements on a wing-fuselage junction model that addresses this need. The experimental measurements were performed in the NASA Langley 14- by 22-Foot Subsonic Tunnel. The model was a full-span wing-fuselage body that was configured with truncated DLR-F6 wings, both with and without leading-edge extensions at the wing root. The model was tested at a fixed chord Reynolds number of 2.4 million, and angles-of-attack ranging from -10 degrees to +10 degrees were considered. Flow-field measurements were performed with a pair of miniature laser Doppler velocimetry (LDV) probes that were housed inside the model and attached to three-axis traverse systems. One LDV probe was used to measure the separated flow field in the trailing-edge junction region. The other LDV probe was alternately used to measure the flow field in the leading-edge region of the wing and to measure the incoming fuselage boundary layer well upstream of the leading edge. Both LDV probes provided measurements from which all three mean velocity components, all six independent components of the Reynolds-stress tensor, and all ten independent components of the velocity triple products were calculated. In addition to the flow-field measurements, static and dynamic pressures were measured at selected locations on the wings and fuselage of the model, infrared imaging was used to characterize boundary-layer transition, oil-flow visualization was used to visualize the separated flow in the leading- and trailing-edge regions of the wing, and unsteady shear stress was measured at limited locations using capacitive shear-stress sensors. Sample results from the measurement techniques employed during the test are presented and discussed.

Kegerise, Michael A.↗
NASA NTRS1975

Technique for producing 'good' GaAs solar cells using poor-quality substrates

Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (greater than 1 micron) instead of shallow and by 'leaching' both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 micron.

Hovel, H. J.↗
NASA NTRS1993

Superconducting Al-trilayer tunnel junctions for use as X-ray detectors

Photolithographic techniques have been developed to fabricate high-quality Al-Al oxide-Al superconducting tunnel junctions for use in X-ray detectors. These devices are designed to incorporate about 1-micron-thick superconducting X-ray absorbers for the detection of less than 10-keV single photons. In an effort to increase energy resolution, superconductor bandgap engineering with lateral and vertical trapping has been used to shorten quasi-particle tunneling times and diffusion lengths and to prevent quasi-particle diffusion away from the tunnel junction. Methods that have been developed for overcoming materials imcompatibility and device degradation upon thermal cycling are reported. The authors also report on the use of a nonrectangular tunnel junction geometry which reduces the magnetic field needed to suppress the Josephson current for stable biasing. Work in progress to measure the energy resolution of these X-ray detectors at 0.35 K is also discussed.

Gaidis, M. C.↗
NASA NTRS1993

Investigation of etching techniques for superconductive Nb/Al-Al2O3/Nb fabrication processes

Wet etching, CF4 and SF6 reactive ion etching (RIE), RIE/wet hybrid etching, Cl-based RIE, ion milling, and liftoff techniques have been investigated for use in superconductive Nb/Al-Al2O3/Nb fabrication processes. High-quality superconductor-insulator-superconductor (SIS) junctions have been fabricated using a variety of these etching methods; however, each technique offers distinct tradeoffs for a given process an wafer design. In particular, it was shown that SF6 provides an excellent RIE chemistry for low-voltage anisotropic etching of Nb with high selectivity to Al. The SF6 tool has greatly improved the trilevel resist junction insulation process. Excellent repeatability, selectivity with respect to quartz, and submicron resolution make Cl2 + BCl3 + CHCl3 RIE a very attractive process for trilayer patterning.

Lichtenberger, A. W.↗
NASA NTRS2005

Advances in Single and Multijunction III-V Photovoltaics on Silicon for Space Power

A collaborative research effort at MIT, Ohio State University and NASA has resulted in the demonstration of record quality gallium arsenide (GaAs) based single junction photovoltaic devices on silicon (Si) substrates. The ability to integrate highly efficient, radiation hard III-V based devices on silicon offers the potential for dramatic reductions in cell mass (approx.2x) and increases in cell area. Both of these improvements offer the potential for dramatic reductions in the cost of on-orbit electrical power. Recently, lattice matched InGaP/GaAs and metamorphic InGaP/InGaAs dual junction solar cells were demonstrated by MBE and OMVPE, respectively. Single junction GaAs on Si devices have been integrated into a space flight experiment (MISSES), scheduled to be launched to the International Space Station in March of 2005. I-V performance data from the GaAs/Si will be collected on-orbit and telemetered to ground stations daily. Microcracks in the GaAs epitaxial material, generated because of differences in the thermal expansion coefficient between GaAs and Si, are of concern in the widely varying thermal environment encountered in low Earth orbit. Ground based thermal life cycling (-80 C to + 80 C) equivalent to 1 year in LEO has been conducted on GaAs/Si devices with no discernable degradation in device performance, suggesting that microcracks may not limit the ability to field GaAs/Si in harsh thermal environments. Recent advances in the development and testing of III-V photovoltaic devices on Si will be presented.

Wilt, David M.↗
NASA NTRS1982

Diffused P+-N solar cells in bulk GaAs

Recently melt grown GaAs, made by liquid encapsulation techniques, has become available. This material is of sufficiently good quality to allow the fabrication of solar cells by direct diffusion. Results obtained with p(+)/n junction solar cells made by zinc diffusion are described. The quality of bulk GaAs for this application is evaluated.

Borrego, J. M.↗
NASA NTRS1972

Improving the efficiency of GaP LED's which emit green light

A study of techniques for preparing n-type material and junctions which yield the most consistent high diode efficiency values high lighted the role that Ga vacancies and/or associated defects play in reducing the green luminescent efficiency of n-type GaP. A useful method for obtaining good quality material was developed. It is shown that junction formation at high temperatures in a process where the n to p transition occurs without removing the substrate from the furnace yields devices superior to those obtained by diffusion or double epitaxy in the conventional manner previously used for GaP junction formation.

Ladany, I.↗
NASA NTRS2002

Response of thyroid follicular cells to gamma irradiation compared to proton irradiation: II. The role of connexin 32

The objective of this study was to determine whether connexin 32-type gap junctions contribute to the "contact effect" in follicular thyrocytes and whether the response is influenced by radiation quality. Our previous studies demonstrated that early-passage follicular cultures of Fischer rat thyroid cells express functional connexin 32 gap junctions, with later-passage cultures expressing a truncated nonfunctional form of the protein. This model allowed us to assess the role of connexin 32 in radiation responsiveness without relying solely on chemical manipulation of gap junctions. The survival curves generated after gamma irradiation revealed that early-passage follicular cultures had significantly lower values of alpha (0.04 Gy(-1)) than later-passage cultures (0.11 Gy(-1)) (P < 0.0001, n = 12). As an additional way to determine whether connexin 32 was contributing to the difference in survival, cultures were treated with heptanol, resulting in higher alpha values, with early-passage cultures (0.10 Gy(-1)) nearly equivalent to untreated late-passage cultures (0.11 Gy(-1)) (P > 0.1, n = 9). This strongly suggests that the presence of functional connexin 32-type gap junctions was contributing to radiation resistance in gamma-irradiated thyroid follicles. Survival curves from proton-irradiated cultures had alpha values that were not significantly different whether cells expressed functional connexin 32 (0.10 Gy(-1)), did not express connexin 32 (0.09 Gy(-1)), or were down-regulated (early-passage plus heptanol, 0.09 Gy(-1); late-passage plus heptanol, 0.12 Gy(-1)) (P > 0.1, n = 19). Thus, for proton irradiation, the presence of connexin 32-type gap junctional channels did not influence their radiosensitivity. Collectively, the data support the following conclusions. (1) The lower alpha values from the gamma-ray survival curves of the early-passage cultures suggest greater repair efficiency and/or enhanced resistance to radiation-induced damage, coincident with the expression of connexin 32-type gap junctions. (2) The increased sensitivity of FRTL-5 cells to proton irradiation was independent of their ability to communicate through connexin 32 gap junctions. (3) The fact that the beta components of the survival curves from both gamma rays and proton beams were similar (average 0.022 +/- 0.008 Gy(-2), P > 0.1, n = 39) suggests that at higher doses the loss of viability occurs at a relatively constant rate and is independent of radiation quality and the presence of functional gap junctions.

Non-NASA Center↗
NASA NTRS1987

Modelling of multijunction cascade photovoltaics for space applications

An alternative class of photovoltaics was presented, which is designed to overcome two problem areas with conventional cascade designs: poor upper subcell performance and lossy intercell ohmic contact (IOC). It was shown that upper subcell quality can be improved by incorporating additional junctions into the upper subcell and that the problems with monolithic IOCs may be circumvented by using complementary pairs of three-terminal cells or a 1 x 2 voltage-matched configuration. Realistic simulations show that AlGaAs-GaAs and AlGaAs-InGaAs multijunction, multiband-gap solar cells (MJSC) may achieve benginning-of-life (BOL) one-sun, AMO efficiencies of 26 and 28 percent, respectively. Complementary cells made in the AlGaAs-InGaAs system can achieve BOL one-sun AMO efficiencies in excess of 27 percent. Seven-layer MJSCs are most advantageous for space applications due to their superior tolerance to radiation degradation.

Educato, James Louis↗
NASA NTRS1988

Forming n/p Junctions With An Excimer Laser

Compact equipment yields high-quality solar cells. Computer controls pulses of excimer laser and movement of silcon wafer. Mirrors direct laser beam to wafer. Lenses focus beam to small spot on surface. Process suitable for silicon made by dendritic-web-growth process.

Alexander, Paul, Jr.↗
NASA NTRS1998

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Neudeck, P. G.↗
NASA NTRS1994

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

EPITAXIAL LAYER↗
NASA NTRS1993

Fabrication of photovoltaic laser energy converterby MBE

A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special high-temperature electron-beam (e-beam) sources were developed especially for the MBE growth of the junctions and CoSi2 layers. Making use of the small (greater than 1.2 percent) lattice mismatch between CoSi2 and Si layers, high-quality and pinhole-free epilayers were achieved, providing a capability of fabricating all the junctions and connecting layers as a single growth process with one pumpdown. Well-defined multiple p-n junctions connected by CoSi2 layers were accomplished by employing a low growth temperature (greater than 700 C) and a low growth rate (less than 0.5 microns/hour). Producing negligible interdiffusion, the low growth temperature and rate also produced negligible pinholes in the CoSi2 layers. For the first time, a stack of three p-n junctions connected by two 10(exp -5) Ohm-cm CoSi2 layers was achieved, meeting the high conversion efficiency requirement. This process can now be optimized for high growth rate to form a practical converter with 10 p-n junctions in the stack.

Lu, Hamilton↗
NASA NTRS1983

Silicon sheet with molecular beam epitaxy for high efficiency solar cells

The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.

Allen, F. G.↗