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NASA NTRS1979

Laser Techniques in Photovoltaic Research

High-power laser pulses were used to replace the conventional high temperature furnace processing for the p-n junction formation step in high speed, low cost solar cell fabrication. Three different approaches to junction formation were tested: (1) laser annealing of ion-implanted Si in which laser radiation is used to remove the radiation damage and to recover the electrical activity in the implanted layer; (2) a process in which a thin film of dopant is first deposited on the substrate and then incorporated into the near-surface region by laser-induced diffusion; and (3) a process in which a heavily doped amorphous silicon layer is deposited on the Si substrate and epitaxially regrown from the melted substrate layer by laser radiation. All three methods were found to provide suitable candidates for high efficiency Si solar cells.

Young, R. T.↗

NASA NTRS1981

Ohmic contacts to GaAs for high-temperature device applications

Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.

Anderson, W. T., Jr.↗

NASA NTRS1985

Pulsed excimer laser processing

The status of pulsed excimer laser processing of PV cells is presented. The cost effective feasibility of fabricating high efficiency solar cells on Czochralski wafers using a pulsed excimer laser for junction formation, surface passivation, and front metallization. Laser annealing results were promising with the best AR coated cell having an efficiency of 16.1%. Better results would be expected with larger laser spot size because there was some degradation in open circuit voltage caused by laser spot overlap and edge effects. Surface heating and photolytic decomposition by the laser was used to deposit tungsten from the reaction of tungsten hexafluoride and hydrogen. The line widths were 5 to 10 mils, and the depositions passed the tape adhesion test. Thinner lines are practical using an optimized optical system.

Wong, D.↗

NASA NTRS1992

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment

Thin film ferroelectric capacitors comprising a ferroelectric film sandwiched between electrodes for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode. The anneal is done so as to form the interface between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550 to 600 C for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the nonswitching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the nonswitching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.

Thakoor, Sarita↗

NASA NTRS1994

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment

Thin film ferroelectric capacitors (10) comprising a ferroelectric film (18) sandwiched between electrodes (16 and 20) for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode (20). The anneal is done so as to form the interface (22) between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550.degree. to 600.degree. C. for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the non-switching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the non-switching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.

Thakoor, Sarita↗

NASA NTRS1986

Quenched-in defects in flashlamp-annealed silicon

Deep levels introduced in boron-doped silicon by heat-pulse annealing with a tungsten-halogen flashlamp are investigated using deep-level transient spectroscopy. Two majority-carrier trapping levels in the band gap, at Ev + 0.32 eV and at Ev + 0.45 eV, are observed. These results are compared to those obtained by furnace-quenching and laser-annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev + 0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp-annealed Si crystals utilized.

Borenstein, J. T.↗

NASA NTRS1978

Automated Array Assembly, Phase 2. Low-cost Solar Array Project, Task 4

Work was done to verify the technological readiness of a select process sequence with respect to satisfying the Low Cost Solar Array Project objectives of meeting the designated goals of $.50 per peak watt in 1986 (1975 dollars). The sequence examined consisted of: (1) 3 inches diameter as-sawn Czochralski grown 1:0:0 silicon, (2) texture etching, (3) ion implanting, (4) laser annealing, (5) screen printing of ohmic contacts and (6) sprayed anti-reflective coatings. High volume production projections were made on the selected process sequence. Automated processing and movement of hardware at high rates were conceptualized to satisfy the PROJECT's 500 MW/yr capability. A production plan was formulated with flow diagrams integrating the various processes in the cell fabrication sequence.

Lopez, M.↗

NASA NTRS1978

Solar power satellite system definition study

A synopsis of the study plan for the solar power satellite system is presented. Descriptions of early task progress is reported for the following areas: (1) laser annealing, (2) solid state power amplifiers, (3) rectenna option, (4) construction of an independent electric orbit transfer vehicle, and (5) construction of a 2.5 GW solar power satellite.

Source record↗

NASA NTRS1979

Solar power satellite system definition study. Volume 1: Executive summary

Configuration concepts, option sizes, and systems definitions study design evolutions are reviewed. The main features of the present reference design silicon solar cell solar power satellite are described, as well as the provisions for space construction and support systems. The principal study accomplishments and conclusions are summarized according to the following tasks: (1) baseline critique; (2) construction and maintenance; (3) industrial complex needs, cost estimates, and production capacity; (4) launch complex requirements at KSC or at an offshore facility; (5) integration of the SPS/ground power network; (6) technology advancement and development; (7) costs and schedules; and (8) exploratory technology: laser annealing of solar cells degraded by proton irradiation, and a fiber-optic phase distribution link at 980 MHz.

Source record↗

NASA NTRS1984

Radiation Damage Workshop

The availability of data regarding the radiation behavior of GaAs and silicon solar cells is discussed as well as efforts to provide sufficient information. Other materials are considered too immature for reasonable radiation evaluation. The lack of concern over the possible catastrophic radiation degradation in cascade cells is a potentially serious problem. Lithium counterdoping shows potential for removing damage in irradiated P-type material, although initial efficiencies are not comparable to current state of the art. The possibility of refining the lithium doping method to maintain high initial efficiencies and combining it with radiation tolerant structures such as thin BSF cells or vertical junction cells could provide a substantial improvement in EOL efficiencies. Laser annealing of junctions, either those formed ion implantation or diffusion, may not only improve initial cell performance but might also reduce the radiation degradation rate.

Stella, P. M.↗

NASA NTRS1985

Pulsed Excimer Laser Processing for Cost-Effective Solar Cells

Residual lattice damage by 5 keV ion implantation and surface flaws induced by wafer cleaning are proven to affect the V sub oc more adversely for laser annealed cells than conventional thermal diffusion. However, an alternative, molecular implantation of molecular species holds potential. The first experimental results are encouraging. The lack of a commercially available mass analyzed implantation with low energy, high fluence ions is constraining.

Wong, D.↗

NASA NTRS1985

Pulsed excimer laser processing for cost-effective solar cells

The application of excimer laser in the fabrication of photovoltaic devices was investigated extensively. Processes included junction formation, laser assisted chemical vapor deposition metallization, and laser assisted chemical vapor deposition surface passivation. Results demonstrated that implementation of junction formation by laser annealing in production is feasible because of excellent control in junction depth and quality. Both metallization and surface passivation, however, were found impractical to be considered for manufacturing at this stage.

Wong, David C.↗

NASA NTRS1987

Ultraviolet and extreme ultraviolet response of charge-coupled-device detectors

Results of a program to enhance the ultraviolet and extreme ultraviolet response of charge-coupled devices are presented. The ultimate goal of the program is to develop a large format device with both high and stable quantum efficiency from 100 to 3000 A that can be used as a windowless imaging detector in a space environment. Ultraviolet quantum efficiency measurements have been made for several ion-implanted and laser-annealed test CCDs. Quantum efficiencies as high as 22 percent at 2500 A, where the absorption depth in silicon is about 55 A, have been observed in one such test CCD. Quantum efficiency measurements of standard back-illuminated CCDs are also presented.

Stern, R. A.↗

NASA NTRS1992

Performance characteristics of STIS detectors

We report quantum efficiency measurements of back-illuminated, ion-implanted, laser-annealed charge coupled devices (CCD's) in the wavelength range 13-10,000 A. The equivalent quantum efficiency (EQE = effective photons detected per incident photon) ranges from a minimum of 5 percent as 1216 A to a maximum of 87 percent at 135 A. Using a simple relationship for the charge collection efficiency of the CCD pixels as a function of depth, we present a semi-empirical model with few parameters which reproduces our measurements with a fair degree of accuracy. The advantage of this model is that is can be used to predict CCD QE performance for shallow backside implanted devices without detailed solution of a system of differential equations, as in conventional approaches, and yields a simple analytic form for the charge collection efficiency which is adequate for detector calibration purposes. Making detailed assumptions about the dopant profile, we also solve the carrier density and continuity equations in order to relate our semi-empirical model parameters to surface and bulk device properties. The latter procedure helps to better establish device processing parameters for a given level of CCD QE performance.

Stern, Robert A.↗

NASA NTRS1997

Fiber-Optic Temperature Sensor Using a Thin-Film Fabry-Perot Interferometer

A fiber-optic temperature sensor was developed that is rugged, compact, stable, and can be inexpensively fabricated. This thin-film interferometric temperature sensor was shown to be capable of providing a +/- 2 C accuracy over the range of -55 to 275 C, throughout a 5000 hr operating life. A temperature-sensitive thin-film Fabry-Perot interferometer can be deposited directly onto the end of a multimode optical fiber. This batch-fabricatable sensor can be manufactured at a much lower cost than can a presently available sensor, which requires the mechanical attachment of a Fabry-Perot interferometer to a fiber. The principal disadvantage of the thin-film sensor is its inherent instability, due to the low processing temperatures that must be used to prevent degradation of the optical fiber's buffer coating. The design of the stable thin-film temperature sensor considered the potential sources of both short and long term drifts. The temperature- sensitive Fabry-Perot interferometer was a silicon film with a thickness of approx. 2 microns. A laser-annealing process was developed which crystallized the silicon film without damaging the optical fiber. The silicon film was encapsulated with a thin layer of Si3N4 over coated with aluminum. Crystallization of the silicon and its encapsulation with a highly stable, impermeable thin-film structure were essential steps in producing a sensor with the required long-term stability.

Beheim, Glenn↗

NASA NTRS1981

Laser processing of silicon solar cells

Results of a study to utilize an Nd:glass laser for production line annealing of ion implantation induced damage in solar cells are reported. Czochralski-grown and sawn Si wafers 7.6 cm in diam, 0.35 mm thick, were implanted with phosphorus junctions and boron BSFs. Annealing with electron beam, laser, and firing of an Al paste to form the BSFs in different cells was compared. The laser was employed at 1.06 and 0.53 micron and in combination of both, with a 20-50 nsec pulsewidth, and energy densities of 1.2, 1.5, 1.9, and 2.1 J/sq cm. Best optical coupling was observed with the combined wavelengths and a 20 nsec pulse, using energy densities less than 1.5 J/sq cm. Although the Al sintered cells displayed the best characteristics, laser annealing is concluded to offer electrically active, defect-free, shallow junction Si substrates for high efficiency cells.

Katzeff, J. S.↗

NASA NTRS1980

Annealing radiation damaged silicon solar cells with a copper halide laser

The use of a multiply pulsed copper halide laser to significantly anneal out the damage to silicon solar cells caused by a simulated space radiation environment is investigated. Preliminary experiments demonstrate that the amount of damage can be decreased by 41% as measured by the maximum power generated.

Pivirotto, T. J.↗

NASA NTRS2022

Laser Patterning Assisted Devitrification and Domain Engineering of Amorphous and Nanocrystalline Alloys

We have investigated laser-patterning and devitrification as a novel method to realize emergent properties in modified regions at the ribbon surface consisting of periodic localized laser spots thermally treated under rapid heating and cooling conditions. Fe-based amorphous ribbons were annealed for systematically varied laser power. Extremely high heating and cooling rates on the order of 10(exp 8)-10(exp 10)K/s have been estimated by finite element analysis simulations. Observations suggest surface melting followed by rapid solidification fast enough to quench and form an amorphous structure upon cooling. Diffusion of heat occurs from the laser irradiated surface region so that a finite volume of material surrounding this region rises in temperature above the crystallization temperature relevant for conventional isothermal annealing experiments. The underlying mechanism of laser annealing and consequences of heat transients involved are discussed in terms of impacts upon micro/nanostructure, residual stresses, and magnetic domain structure surrounding the laser irradiated region. The study illustrates the potential to exploit spatially optimized phase transformations in a scalable manufacturing process of amorphous and nanocrystalline alloys to locally access otherwise inaccessible extreme heating and cooling rates.

Amorphous ribbons↗