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High-efficiency perovskite photovoltaic modules achieved via cesium doping
Perovskite solar modules have been attracting increasing attention due to their market potential, yet publications concerned with theintrinsic scale-up potential of different perovskite compositions remain relatively scarce. On the other hand, while great success is being made towards improving the power conversion efficiency (PCE) of perovskite solar cells (PSCs) by cesium cation (Cs + ) doping of the perovskite, more attention is being paid to the perovskite phase stabilization effect of Cs + doping, and less to other properties that are critical to understand and futher improve the PSC's. In this work, moderately-Cs-doped MAPbI 3 was employed as a model perovskite material in order to exclude the phase stabilization effect. Our systematic study revealed the influence of Cs + in organic-inorganic hybrid perovskites on the crystal structure, crystallization process, trap state density, band structure and charge (i.e., ions or photo-carriers) transport. Markedly, it has been observed that Cs + doping can greatly increase the carrier diffusion length in the perovskite films, thus improving the potential to scale-up PSC's.The PCE of small area devices (0.09 cm 2 ) was increased to 21.72% from 19.73%, with decreased hysteresis behavior and increased operational stability (T85 = 1000 h) after Cs + doped, where T85 refers to the retention of 85% of the initial PCE. Moreover, a PCE of 21.08% was obtained for a Cs + -containing perovskite module with an active area > 30 cm 2 , which demonstrates a better "reproducibility" than the reference sample (MAPbI3-based perovskite modules, PCE = 18.26%).
Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon
This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of − <#comment/> 150 d B / H z . The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.
Charge Transport Modulation in PbSe Nanocrystal Solids by Au x Ag 1– x Nanoparticle Doping
Nanocrystal (NC) solids are an exciting class of materials, whose physical properties are tunable by choice of the NCs as well as the strength of the interparticle coupling. One can consider these NCs as “artificial atoms” in analogy to the formation of condensed matter from atoms. Akin to atomic doping, the doping of a semiconducting NC solid with impurity NCs can drastically alter its electronic properties. A high degree of complexity is possible in these artificial structures by adjusting the size, shape, and composition of the building blocks, which enables “designer” materials with targeted properties. Here, we present the doping of the PbSe NC solids with a series of Au x Ag 1–x alloy nanoparticles (NPs). A combination of temperature-dependent electrical conductance and Seebeck coefficient measurements and room-temperature Hall effect measurements demonstrates that the incorporation of metal NPs both modifies the charge carrier density of the NC solids and introduces energy barriers for charge transport. These studies point to charge carrier injection from the metal NPs into the PbSe NC matrix. The charge carrier density and charge transport dynamics in the doped NC solids are adjustable in a wide range by employing the Au x Ag 1–x NP with different Au:Ag ratio as dopants. Furthermore, this doping strategy could be of great interest for thermoelectric applications taking advantage of the energy filtering effect introduced by the metal NPs.
Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas
In this work, Experimental study of the influence of internal electric field and the temperature on the photoluminescence of InAs self assembled quantum dots inserted in AlGaAs/GaAs modulation doped hetero-structure have been investigated. The internal electric field is controlled by an appropriate design of the hetero-structure. We have observed a red shift of the photoluminescence position peaks result from the quantum confined Stark effect due to the local electric field existing in the structure. Estimation values of the internal electric field have been obtained through carrier’s densities values in interface of AlGaAs/GaAs hetero-junction. An anomalous dependence of the full width at half maximum with temperature has been found, which attributed to the carrier’s dynamics between InAs quantum dots layer and the two-dimensional electron gas.
Enhancing the Reaction Kinetics and Stability of Co‐Free Li‐Rich Cathode Materials via a Multifunctional Strategy
Co-free Li-rich layered oxides (CFLLOs) with anionic redox activity are among the most promising cathode materials for high-energy-density and low-cost lithium-ion batteries (LIBs). However, irreversible oxygen release often causes severe structural deterioration, electrolyte decomposition, and the formation of unstable cathode-electrolyte interface (CEI) film with high impedance. Additionally, the elimination of cobalt elements further deteriorates the reaction kinetics, leading to reduced capacity and poor rate performance. Here, in this study, a multifunctional strategy is proposed, incorporating Li 2 MnO 3 phase content regulation, micro-nano structure design, and heteroatom substitution. The increased content of Li 2 MnO 3 phase enhances the capacity through oxygen redox. The smaller nanoscale primary particles induce greater tensile strain and introduce more grain boundaries, thereby improving the reaction kinetics and reactivity, while the larger micron-sized secondary particles help to reduce interfacial side reactions. Furthermore, Na⁺ doping modulates the local coordination environment of oxygen, stabilizing both the anion framework and the crystal structure. As a result, the designed cathode exhibits enhanced rate performance, delivering a capacity of 158 mAh g⁻¹ at 5.0 C and improved cyclic stability, with a high capacity retention of 99% after 400 cycles at 1.0 C. This multifunctional strategy holds great promise for advancing the practical application of CFLLOs in next-generation LIBs.
Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si
We investigate the impact of threading dislocation density on the reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8 × 108 cm−2 to 7.3 × 106 cm−2 has improved the laser lifetime by about five orders of magnitude when aged continuous-wave near room temperature (35 °C). We have achieved extrapolated lifetimes (time to double initial threshold) more than 10 × 106 h. An accelerated laser aging test at an elevated temperature (60 °C) reveals that p-modulation doped quantum dot lasers on Si retain superior reliability over unintentionally doped ones. These results suggest that epitaxially grown quantum dot lasers could be a viable approach to realize a reliable, scalable, and efficient light source on Si.
On quantum-dot lasing at gain peak with linewidth enhancement factor $α$ H = 0
This paper describes an investigation of the linewidth enhancement factor α H in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing α H . In particular, the feasibility of lasing at the gain peak with α H = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.
Upper critical magnetic field and multiband superconductivity in artificial high-𝑇 𝑐 superlattices of nano quantum wells
Artificial high-T c superlattices (AHTS) composed of quantum building blocks with tunable superconducting critical temperature have been synthesized by engineering their nanoscale geometry using the Bianconi-Perali Valletta (BPV) two-gap superconductivity theory. These quantum heterostructures consist of quantum wells made of superconducting, modulation-doped Mott insulators (S), confined by a metallic (N) potential barrier. The lattice geometry has been carefully engineered to induce the predicted Fano-Feshbach shape resonance between the gaps, near a topological Lifshitz transition. Here, we validate the BPV theory by providing compelling experimental evidence that AHTS samples, at the peak of the superconducting dome, exhibit resonant two-band, two-gap superconductivity. This is demonstrated by measuring the temperature dependence of the upper critical magnetic field, μ 0 H c2 , in samples with superlattice periods 3.3 < d < 5.28 nm and L/d ratios close to the magic value 2/3 (where L is the thickness of the superconducting La 2 CuO 4 layer and d is the superlattice period). Here, the data reveal the predicted upward concavity in H c2 (T) and a characteristic kink in the coherence length as a function of temperature, confirming the predicted two-band superconductivity with Fermi velocity ratio ≈ 0.25 and significant pair-exchange term among the two condensates.
Thermal and Quantum Melting Phase Diagrams for a Magnetic-Field-Induced Wigner Solid
A sufficiently large perpendicular magnetic field quenches the kinetic (Fermi) energy of an interacting two-dimensional (2D) system of fermions, making them susceptible to the formation of a Wigner solid (WS) phase in which the charged carriers organize themselves in a periodic array in order to minimize their Coulomb repulsion energy. In low-disorder 2D electron systems confined to modulation-doped GaAs heterostructures, signatures of a magnetic-field-induced WS appear at low temperatures and very small Landau level filling factors ($\textit{ν}$ ≃ 1/5). In dilute GaAs 2D hole systems, on the other hand, thanks to the larger hole effective mass and the ensuing Landau level mixing, the WS forms at relatively higher fillings ($\textit{ν}$ ≃ 1/3). Here we report our measurements of the fundamental temperature vs filling phase diagram for the 2D holes’ WS-liquid thermal melting. Moreover, via changing the 2D hole density, we also probe their Landau level mixing vs filling WS-liquid quantum melting phase diagram. In this work, we find our data to be in good agreement with the results of very recent calculations, although intriguing subtleties remain.
Record-quality GaAs two-dimensional hole systems
The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation doping, with mobility values as high as 5.8 × 10 6 cm 2 /(V s) at a hole density of p = 1.3 × 10 11 /cm 2 , implying a mean free path of ≃ 27 μm. In the low-temperature magnetoresistance trace of this sample, we observe high-order fractional quantum Hall states up to the Landau level filling ν = 12/25 near ν = 1/2. Furthermore, we see a deep minimum develop at ν = 1/5 in the magnetoresistance of a sample with a much lower hole density of p = 4.0 × 10 10 /cm 2 where we measure a mobility of 3.6 × 10 6 cm2/(V s). Finally, these improvements in sample quality were achieved by the reduction of residual impurities both in the GaAs channel and in the AlGaAs barrier material, as well as optimization in the design of the sample structure.
Dislocation-driven growth of two-dimensional lateral quantum-well superlattices
Here, the advent of two-dimensional (2D) materials has led to extensive studies of heterostructures for novel applications. 2D lateral multiheterojunctions and superlattices have been recently demonstrated, but the available growth methods can only produce features with widths in the micrometer or, at best, 100-nm scale and usually result in rough and defective interfaces with extensive chemical intermixing. Widths smaller than 5 nm, which are needed for quantum confinement effects and quantum-well applications, have not been achieved. We demonstrate the growth of sub–2-nm quantum-well arrays in semiconductor monolayers, driven by the climb of misfit dislocations in a lattice-mismatched sulfide/selenide heterointerface. Density functional theory calculations provide an atom-by-atom description of the growth mechanism. The calculated energy bands reveal type II alignment suitable for quantum wells, suggesting that the structure could, in principle, be turned into a “conduit” of conductive nanoribbons for interconnects in future 2D integrated circuits via n-type modulation doping. This misfit dislocation–driven growth can be applied to different combinations of 2D monolayers with lattice mismatch, paving the way to a wide range of 2D quantum-well superlattices with controllable band alignment and nanoscale width.
Transient Studies of Nonequilibrium Transport in Two-Dimensional Semiconductors
The overarching objective of research under DOE support has been to investigate emergent carrier phenomena in different two-dimensional (2D) systems, under conditions where they are driven far from equilibrium. The description of nonequilibrium transport has long represented one of the most enduring challenges in condensed-matter physics, in large part due to the need to invoke the role of complex many-body phenomena (electron-phonon and electron-electron coupling) in this regime. In this project, we have explored aspects of this problem in a variety of different two-dimensional systems. These include the modulation-doped two-dimensional electrons gas, or 2DEG, in GaAs/AlGaAs heterostructures; the electron and hole systems in graphene and its related hetero-structures, and; the strongly-confined electron layers in transition-metal dichalcogenide (MoS 2 and WS 2 ) and trichalcogenide (TiS 3 ) materials. Significant understanding has been achieved in a number of different areas, as we elaborate upon in subsequent sections of this proposal: Nanoscale spectroscopy of defect-related barriers in MoS2 Negative differential conductance due to inter-valley scattering in WS 2 under high fields Incipient localization due to scattering from frozen-phonon disorder in quantum point contacts High-field transient transport in graphene/hexagonal BN heterostructures Universal voltage scaling of quantum corrections in graphene under nonequilibrium A defining feature of much of this research has been an approach to problem solving in which novel experimental techniques (such as transient electrical pulsing and scanning-probe microscopy) are combined with the development (in collaboration with colleagues from condensed-matter theory) of sophisticated models, a strategy that we propose to continue in our future research. In recent years, we have developed an increasing capacity for handling atomically-thin materials, and their van der Waals systems, a capacity that is reflected in the balance of topics listed above.
Correlated States of Two-dimensional Electron Systems in AlAs Quantum Wells
Two-dimensional (2D) carrier systems confined to modulation-doped semiconductor hetero-structures provide a nearly ideal testing ground for exploring new physical phenomena. At low temperatures and in the presence of a strong magnetic field, these systems exhibit fascinating, often unexpected, many-body states, arising from the strong electron-electron interaction. In our work, we studied various many-body states of different 2D systems. These included 2D electron and hole systems confined to GaAs and also to AlAs quantum wells, including wide quantum wells where the charge distribution is bilayer like. We observed and reported new phenomena in these systems, including new (even-denominator) fractional quantum Hall states, Wigner crystal solid phases, and composite fermion compressible states.
Electronic Trap-State Modulation in Sm-Doped SnO 2 Nanofibers Enables Ultrasensitive Hydrogen Sensing
The demand for sub-ppm hydrogen (H 2 ) sensing is growing across emerging applications such as environmental monitoring, breath-based disease diagnostics, and early-stage battery failure detection. However, achieving reliable ppb-level detection with chemiresistive metal oxide sensors remains challenging. At trace gas concentrations, resistance modulation is often insufficient, particularly in the absence of noble metal catalysts. Here, we report samarium-doped tin dioxide (Sm-SnO 2 ) nanofibers in which electronic trap-state modulation is exploited to enable ultrasensitive hydrogen sensing. The 2 at% Sm-doped SnO 2 nanofibers exhibited markedly enhanced H 2 sensitivity, achieving clear detection down to 25 ppb H 2 at 200 °C, with a theoretical limit of detection of 4.5 ppb, placing this material among the most sensitive noble-metal-free SnO 2 -based H 2 sensors reported to date. Mechanistic investigations through X-ray photoelectron spectroscopy and electron energy loss spectroscopy revealed that Sm 3+ doping introduces deep trap states associated with charge-compensating defect complexes. These states reduce free carrier density, increase baseline resistance, and enable trap-assisted charge release during H 2 exposure, thereby amplifying the sensing response. Trap-state engineering via rare-earth doping, exemplified by Sm-SnO 2 , provides an effective pathway for achieving ppb-level hydrogen detection in noble-metal-free chemiresistive sensors.
Spatially Precise Light‐Activated Dedoping in Wafer‐Scale MoS 2 Films
2D materials, particularly transition metal dichalcogenides (TMDCs), have shown great potential for microelectronics and optoelectronics. However, a major challenge in commercializing these materials is the inability to control their doping at a wafer scale with high spatial fidelity. Interface chemistry is used with the underlying substrate oxide and concomitant exposure to visible light in ambient conditions for photo-dedoping wafer scale MoS 2 . It is hypothesized that the oxide layer traps photoexcited holes, leaving behind long-lived electrons that become available for surface reactions with ambient air at sulfur vacancies (defect sites) resulting in dedoping. Additionally, high fidelity spatial control is showcased over the dedoping process, by laser writing, and fine control achieved over the degree of doping by modulating the illumination time and power density. This localized change in MoS 2 doping density is very stable (at least 7 days) and robust to processing conditions like high temperature and vacuum. The scalability and ease of implementation of this approach can address one of the major issues preventing the “Lab to Fab” transition of 2D materials and facilitate its seamless integration for commercial applications in multi-logic devices, inverters, and other optoelectronic devices.
Nitrogen-doped graphene nanomaterials for electrochemical catalysis/reactions: A review on chemical structures and stability
The electronic structure of the carbon-based nanomaterials can be modulated by doping heteroatoms into them. When nitrogen is doped into the graphene structure with different bonding configurations, it changes the material's electronic properties in a variety of ways. Because of the tuned electronic properties, nitrogen-doped graphene (N-G) is applicable in electrochemical systems as catalyst. Despite having tremendous prospects, a holistic view of the structural and functional properties of N-G is still unclear. Moreover, to our knowledge, significant findings on the properties of N-G are not well documented yet, which creates an obstacle to the further improvement of this nanomaterial. Keeping our focus on the catalytic activities, in this paper, we presented an in-detailed review of the overall chemical structure and functional properties of N-G nanomaterials. Starting from the structural properties of major precursor materials for N-G synthesis, we reviewed the physical features and its dependence on the synthesis parameters. Also, a detailed study has been conducted on the key nitrogen functional groups' structural properties, favorable formation environment, influence on the electronic structure of N-G, and role in the catalytic activity. Finally, current progress on the stability of N-G nanocatalysts is reported with an insight into the degradation mechanism.
Sacrificial Synthesis of Supported Ru Single Atoms and Clusters on N-doped Carbon Derived from Covalent Triazine Frameworks: A Charge Modulation Approach
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