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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of a HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1985

Slow plastic strain rate compressive flow in binary CoAl intermetallics

Constant-velocity elevated temperature compression tests have been conducted on a series of binary CoAl intermetallics produced by hot extrusion of blended prealloyed powders. The as-extruded materials were polycrystalline, and they retained their nominal 10-micron grain size after being tested between 1100 and 1400 K at strain rates ranging from 2 x 10 to the -4th to 2 x 10 to the -7th per sec. Significant plastic flow was obtained in all cases; while cracking was observed, much of this could be due to failure at matrix-oxide interfaces along extrusion stringers rather than to solely intergranular fracture. A maximum in flow strength occurs at an aluminum-to-cobalt ratio of 0.975, and the stress exponent appears to be constant for aluminum-to-cobalt ratios of 0.85 or more. It is likely that very aluminum-deficient materials deform by a different mechanism than do other compositions.

Whittenberger, J. D.↗
NASA NTRS1991

Structural characterization of high temperature composites

Glass, ceramic, and carbon matrix composite materials have emerged in recent years with potential properties and temperature resistance which make them attractive for high temperature applications such as gas turbine engines. At the outset of this study, only flexural tests were available to evaluate brittle matrix composites at temperatures in the 600 to 1000 C range. The results are described of an ongoing effort to develop appropriate tensile, compression, and shear test methods for high temperature use. A tensile test for unidirectional composites was developed and used to evaluate the properties and behavior of ceramic fiber reinforced glass and glass-ceramic matrix composites in air at temperatures up to 1000 C. The results indicate generally efficient fiber reinforcement and tolerance to matrix cracking similar to polymer matrix composites. Limiting properties in these materials may be an inherently very low transverse strain to failure, and high temperature embrittlement due to fiber/matrix interface oxidation.

Mandell, J. F.↗
NASA NTRS1993

Evaluation of chemical conversion material (protective coating) exposed to space environmental conditions

This report focuses on the development of an operational Rutherford backscattering spectrometry (RBS) system and shows the application of such a system on a space environmental test. Thin films of aluminum and tantalum were deposited on diamond substrates. These films were anodized and preexposure characterization spectra obtained using RBS and total hemispherical reflectance. The samples were exposed to energetic protons then postexposure characterization spectra was obtained using the same techniques. Conclusions based on the comparison of preexposure and postexposure spectra are presented. RBS comparison spectra show no change in the metal/metal oxide interface, while the comparison reflectance data indicate change. Explanations for this reflectance change are presented in this report.

Edwards, D. L.↗
NASA NTRS1992

Observation of radiation induced changes in stress and electrical properties in MOS devices

Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V(ot) and V(it) were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of Delta V(it) and Delta V(ot) taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986, 1987); compressive stress at the silicon/SiO2 interface does reduce radiation damage in the device.

Shaw, D. C.↗
NASA NTRS2001

2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

Svizhenko, Alexei↗
NASA NTRS2015

Creep Behavior and Durability of Cracked CMC

To understand failure mechanisms and durability of cracked Ceramic matrix composites (CMCs), Melt Infiltration (MI) SiCSiC composites with Sylramic-iBN fibers and full Chemical vapour infiltration SiCSiC composites with Sylramic-ion bombarded BN (iBN) and Hi-Nicalon -S fibers were pre-cracked between 150 to 200 megapascal and then creep and Sustained Peak Low Cycle Fatigue (SPLCF) tested at 13150 C at stress levels from 35 to 103 megapascal for up to 200 hours under furnace and burner rig conditions. In addition creep testing was also conducted on pre-cracked full Chemical vapour infiltration SiCSiC composites at 14500 C between 35 and 103 megapascal for up to 200 hours under furnace conditions. If the specimens survived the 200 hour durability tests, then they were tensile tested at room temperature to determine their residual tensile properties. The failed specimens were examined by Scanning electron microscope (SEM) to determine the failure modes and mechanisms. The influence of crack healing matrix, fiber types, crack density, testing modes and interface oxidation on durability of cracked Ceramic matrix composites (CMCs) will be discussed.

Creep↗
NASA NTRS1992

Oxygen-induced Al surface segregation in Al(x)Ga(1-x)As and the effect of Y overlayers on the oxidation of the Y/Al(x)Ga(1-x)As interface

The oxidation of Al(x)Ga(1-x)As (x = 0.15, AlGaAs) was studied by AES and XPS at 350 C and different oxygen exposures (up to 5 x 10 exp 4 L). Also studied were the effects of yttrium overlayers (theta = 3 ML) on the oxidation of the AlGaAs surface. Substantial oxygen-induced Al surface segregation has been observed for both yttriated and nonyttriated AlGaAs surfaces which increased with increasing oxygen exposure. Also observed is a significant Y-enhanced oxidation of the AlGaAs surface. Oxidation of the yttriated AlGaAs surface was found to be a factor of 4 greater than that of the nonyttriated surface. Also, while oxidation of the nonyttriated AlGaAs yielded mainly Al2O(x) (x less than 3) and only little Ga2O3, the yttriated AlGaAs surface oxide layer was principally Ga2O3 and stoichiometric Al2O3. However, both the yttriated and nonyttriated surfaces were found to contain metallic As within the oxide layer.

Mesarwi, A.↗
NASA NTRS1979

A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

Kuhlman, G. J.↗
NASA NTRS1980

Intensity analysis of XPS spectra to determine oxide uniformity - Application to SiO2/Si interfaces

A simple method of determining oxide uniformity is derived which requires no knowlege of film thickness, escape depth, or film composition. The method involves only the measurement of oxide and substrate intensities and is illustrated by analysis of XPS spectral data for thin SiO2 films grown both thermally and by low-temperature chemical vapor deposition on monocrystalline Si. A region 20-30 A thick is found near the SiO2/Si interface on thermally oxidized samples which has an inelastic mean free path 35% less than that found in the bulk oxide. This is interpreted as being due to lattice mismatch resulting in a strained region which is structurally, but not stoichiometrically, distinct from the bulk oxide.

Vasquez, R. P.↗
NASA NTRS1981

Microstructure of Al2O3 scales formed on NiCrAl alloys

The structure of transient scales formed on pure and Y or Zr-doped Ni-15Cr-13Al alloys oxidized for 0.1 hr at 1100 C was studied by the use of transmission electron microscopy. Crystallographically oriented scales were found on all three alloys, but especially for the Zr-doped NiCrAl. The oriented scales consisted of alpha-(Al,Cr)2O3, Ni(Al,Cr)2O4 and gamma-Al2O3. They were often found in intimate contact with each other such that the close-packed planes and directions of one oxide phase were aligned with those of another. The prominent structural features of the oriented scales were approximately equal to micrometer subgrains; voids, antiphase domain boundaries and aligned precipitates were also prevalent. Randomly oriented alpha-Al2O3 was also found and was the only oxide ever observed at the immediate oxide metal interface. These approximately 0.15 micrometer grains were populated by intragranular voids which decreased in size and number towards the oxide metal interface. A sequence of oxidation was proposed in which the composition of the growing scale changed from oriented oxides rich in Ni and Cr to oriented oxides rich in Al. At the same time the structure changed from cubic spinels to hexagonal corundums with apparent precipitates of one phase in the matrix of the other. Eventually randomly oriented pure alpha-Al2O3 formed as the stable oxide with an abrupt transition: there was no gradual loss of orientation, no gradual compositional change or no gradual decrease in precipitate density.

Smialek, J. L.↗
NASA NTRS1981

Oxygen impurity effects at metal/silicide interfaces - Formation of silicon oxide and suboxides in the Ni/Si system

The effect of implanted oxygen impurities on the Ni/Ni2Si interface is investigated using X-ray photoelectron spectroscopy, He-4(+) backscattering and O(d, alpha)-16 N-14 nuclear reactions. Oxygen dosages corresponding to concentrations of 1, 2, and 3 atomic percent were implanted into Ni films evaporated on Si substrates. The oxygen, nickel, and silicon core lines were monitored as a function of time during in situ growth of the Ni silicide to determine the chemical nature of the diffusion barrier which forms in the presence of oxygen impurities. Analysis of the Ni, Si, and O core levels demonstrates that the formation of SiO2 is responsible for the Ni diffusion barrier rather than Ni oxide or mixed oxides, such as Ni2SiO4. It is determined that 2.2 x 10 to the 16th O/qu cm is sufficient to prevent Ni diffusion under UHV annealing conditions.

Grunthaner, P. J.↗
NASA NTRS1989

TEM studies of oxidized NiAl and Ni3Al cross sections

Cross sections of oxide scale/(Ni-Al) intermetallics were prepared by a new method and studied using primarily TEM. The cross sections were prepared by encasing an oxidized metal specimen sandwich in a low-melting-temperature zinc alloy. Observations of oxidized zirconium-doped beta-NiAl cross sections revealed crystallographic voids beneath an adherent Al2O3 scale. The oxide-metal interface was incoherent, but a high dislocation density in the metal near the interface suggested that a large tensile stress was induced by the attached oxide scale. A duplex Al2O3-NiAl2O4 scale formed on zirconium-doped and zirconium/boron-doped gamma-prime-Ni3Al alloys. Additional results are presented involving oxidation mechanisms and oxide-metal interface structures.

Doychak, J.↗
NASA NTRS1993

A sulfur segregation study of PWA 1480, NiCrAl, and NiAl alloys

Some nickel based superalloys show reduced oxidation resistance from the lack of an adherent oxide layer during high temperature cyclic oxidation. The segregation of sulfur to the oxide-metal interface is believed to effect oxide adhesion, since low sulfur alloys exhibit enhanced adhesion. X ray Photoelectron Spectroscopy (XPS) was combined with an in situ sample heater to measure sulfur segregation in NiCrAl, PWA 1480, and NiAl alloys. The polished samples with a 1.5 to 2.5 nm (native) oxide were heated from 650 to 1100 C with hold times up to 6 hr. The sulfur concentration was plotted as a function of temperature versus time at temperature. One NiCrAl sulfur study was performed on the same casting used by Browning to establish a base line between previous Auger Electron Spectroscopy (AES) results and the XPS results of this study. Sulfur surface segregation was similar for PWA 1480 and NiCrAl and reached a maximum of 30 at% at 800 to 850 C. Above 900 C the sulfur surface concentration decreased to about 3 at% at 1100 C. These results are contrasted to the minimal segregation observed for low sulfur hydrogen annealed materials which exhibit improved scale adhesion.

Jayne, D. T.↗
NASA NTRS1986

Oxidation and embrittlement of Ti-6Al-2Sn-4Zr-2Mo alloy

A thermogravimetric analysis monitoring study has been conducted for Ti-6Al-2Sn-4Zr-2Mo in the 593-760 C range, with a view to its total oxidation kinetics in laboratory air. In addition, tensile elongation was obtained for selected foil specimens after their exposure to simulated Space Shuttle reentry conditions. The total weight gain with time exhibited two parabolic stages separated by a transient region which is the result of a simultaneous increase in the parabolic growth rate constant for the oxide and in oxygen solubility at the oxide-metal interface. A model for the total oxidation kinetics accounting for the two individual components (oxide growth and solid solution formation) is proposed; the activation energy for oxygen diffusion in the alpha-solid solution is shown to approximate the activation energy for the degradation of tensile elongation of the alloy in its foil gage condition.

Shenoy, R. N.↗