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Multistage diffraction filter consisting of coalined series of pinholes on parallel sheets can be used as nondegradable UV filter. Beam is attenuated as each pinhole diffracts radiation in controlled manner into divergent beam, and following pinhole accepts only small part of that beam.
Hemispherical refracting element gives pinhole camera 180 degree field-of-view without compromising its simplicity and depth-of-field. Refracting element, located just behind pinhole, bends light coming in from sides so that it falls within image area of film. In contrast to earlier pinhole cameras that used water or other transparent fluids to widen field, this model is not subject to leakage and is easily loaded and unloaded with film. Moreover, by selecting glass with different indices of refraction, field at film plane can be widened or reduced.
The pinhole occulter system, a space shuttle based experiment for the production of hard X-ray images taken primarily from the Sun is described. The system is a pinhole camera utilizing a deployable 50 m flexible boom for separating the pinhole from the recording devices located in the shuttle. The system is subjected to the disturbances of the shuttle. The worst of these are thruster firing for orbit correction, man motion, motion induced by other systems, and gravity gradient torques. The control system of the pointing mount senses both position and velocity of the mask tip and uses these to estimate accurately the flexible modes of the system.
A solid-phase epitaxy has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (1000/sq cm detection limit). The technique utilizes room-temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550-600 C. CoSi2 films grown without the Si cap are found to have pinhole densities of (1-10) x 10 to the 7th/sq cm when annealed at similar temperatures. A CF4 plasma-etching technique was used to increase the visibility of the pinholes in the silicide layer.
Rotating-pinhole calibrator designed for use in calibrating and testing optical instrument measuring sizes of cloud droplets, dust particles, and other small particles suspended in flowing air. Easily attachable to particle-size-measuring instrument and suitable for both quick verification of calibration in field and detailed calibration studies in laboratory. Calibrator used to determine such operating parameters of instrument as optical collection angles, depth of field, profile of laser beam used to measure particles, and response to trajectory of particle. Also used to align instrument. Pinhole reused any number of times without risk of variation in diffraction pattern. Furthermore, size of pinhole chosen precisely and at will.
Superconductor/normal conductor/superconductor (SNS) microbridge devices with pinhole-defined active regions undergoing development. Device includes thin, electrically insulating layer deposited epitaxially, with controlled formation of pinholes, on one of two superconducting layers. Normally conducting metal deposited epitaxially in pinholes and on insulating layer, forming electrical contact between two superconducting layers. Junction resistances and maximum junction voltages expected to be increased.
Perovskite solar cells (PSCs) rapidly degrade under reverse bias, a condition that may occur during partial shading. Here, in this study, we use electrical measurements, electron microscopy, and optical and thermal imaging to investigate abrupt breakdown and hotspotting under low reverse potentials (<|-2| V). We show that microscopic pinholes in the perovskite layer cause rapid, destructive breakdown under reverse bias despite minimally reducing power conversion efficiencies. Measurements on miniature (200-micrometer diameter) PSCs and perovskite-free transport-layer diodes indicate that abrupt, low-voltage breakdown occurs in nanoscale to micrometer-scale defects and that metal migration and filamentation are unlikely causes. Reverse-bias stability substantially improves when pinholes in the perovskite and transport layers are eliminated. Atomic layer deposition of tin oxide prevents abrupt breakdown by ensuring physical separation between electrodes-not by blocking metal ion migration. Perovskite researchers should adopt cleaner, more uniform deposition techniques to enable robust PSCs for further research and commercial applications.
The pinhole‐free silicon oxide (SiO x ) layer grown using dissolved ozone in deionized water (DI‐O 3 ) is demonstrated. An ultrathin SiO x layer of thickness 1.53 nm ± 1.5% is grown on silicon wafer using 7 ppm DI‐O 3 . A four‐step methodology, including 25 wt% aq. tetramethylammonium hydroxide (TMAH) solution at 80 °C, is employed to magnify the pinhole signatures in the underlying silicon and visualized with dark‐field optical microscopy (DFOM) and scanning electron microscopy (SEM). The DFOM images show spots on the surface of wafer that originate from airborne particles, contamination, etc. SEM images reveal the absence of etch pits in silicon even after etching of SiO x /silicon in TMAH for 300 s. The minority carrier lifetime and interface states density in AlO x ‐capped SiO x /Si structure are ≥2 ms at carrier density of 1 × 10 15 cm −3 and less than 2 × 10 11 cm −2 eV −1 , respectively.
Two-dimensional (2D) niobium carbide, Nb 4 C 3 T x (T x : O, OH, and F), a representative member of the 43 MXene structural motif, has shown promising electrochemical performance in acidic electrolytes. The capacitive performance of Nb 4 C 3 T x in neutral aqueous electrolytes has been reported as moderate, but little effort has been made to improve it. In this paper, we report a method to introduce nanopores (pinholes) in Nb 4 C 3 T x MXene flakes by adjusting the etching time. The pinholes generated during the etching process improve ion diffusion pathways, which are otherwise hindered by the restacking of the 2D flakes. The “holey Nb 4 C 3 T x ” shows a 50 % improved rate capability at charge/discharge time scales of 1–2 s in 1 M Li 2 SO 4 , Na 2 SO 4 , and (NH 4 ) 2 SO 4 electrolytes. Our strategy of controlling the permeability of Nb 4 C 3 T x sheets can potentially be applied to other MXenes, providing guidance for improving the capacitance and rate capability of 2D materials.
Abstract Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally demonstrate that GaSb films grow on graphene-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graphene serve as selective nucleation sites, followed by lateral epitaxy and coalescence into a continuous film. Remote interactions are not necessary in order to explain the growth. Importantly, the small size of the pinholes permits exfoliation of continuous, free-standing GaSb membranes. Due to the chemical similarity between GaSb and other III-V materials, we anticipate this mechanism to apply more generally to other materials. By combining molecular beam epitaxy with in-situ electron diffraction and photoemission, plus ex-situ atomic force microscopy and Raman spectroscopy, we track the graphene defect generation and GaSb growth evolution a few monolayers at a time. Our results show that the controlled introduction of nanoscale openings in graphene provides an alternative route towards tuning the growth and properties of 3D epitaxial films and membranes on 2D material masks.
Superconducting resonators with high quality factors have been fabricated from aluminum films, suggesting potential applications in quantum computing. Improvement of thin film crystal quality and removal of void and pinhole defects will improve quality factor and functional yield. Epitaxial aluminum films with superb crystallinity, high surface smoothness, and interface sharpness were successfully grown on the c-plane of sapphire using sputter beam epitaxy. This study assesses the effects of varying substrate preparation conditions and growth and prebake temperatures on crystallinity and smoothness. X-ray diffraction and reflectivity measurements yield extensive Laue oscillations and Kiessig thickness fringes for films grown at 200 °C under 15 mTorr Ar, indicating excellent crystallinity and surface smoothness; moreover, an additional substrate preparation procedure which involves (1) a modified substrate cleaning procedure and (2) prebake at 700 °C in 20 mTorr O 2 is shown by atomic force microscopy to yield nearly pinhole-free film growth while maintaining epitaxy and high crystal quality. The modified cleaning procedure is environmentally friendly and eliminates the acid etch steps common to conventional sapphire preparation, suggesting potential industrial application both on standard epitaxial and patterned surface sapphire substrates.
We present measurements of spatially and temporally resolved electron temperature in high-energy-density plasmas using gated x-ray pinhole imagers. A 2D image of bremsstrahlung x-ray self-emission from laser-driven plasma plumes is detected at the same time through two pinholes covered with different filter materials. By comparing the attenuated signal through each filter, a spatially resolved electron temperature as low as 0.1 keV can be estimated. Measurements of the plasma plume taken from different directions indicate that imaging through extended plasmas has a negligible effect on the temperature estimates. Methods for estimating the expected signal, selecting filters, and incorporating the response of the detector are discussed.
When making photographs in X rays or gamma rays with a multiple-pinhole camera, the individual images of an extended object such as the sun may be allowed to overlap. Then the situation is in many ways analogous to that in a multiplexing device such as a Fourier spectroscope. Some advantages and problems arising with such use of the camera are discussed, and expressions are derived to describe the relative efficacy of three exposure/postprocessing schemes using multiple-pinhole cameras.
The paper describes a graphic technique for the analysis and optimization of pinhole size and focal length. The technique is based on the use of the transfer function of optical elements described by Scott (1959) to construct the transfer function of a circular pinhole camera. This transfer function is the response of a component or system to a pattern of lines having a sinusoidally varying radiance at varying spatial frequencies. Some specific examples of graphic design are presented.
An emissive Langmuir probe was used to measure the potentials within the plasma sheath developed around a hole in a simulated solar array at voltages between 50 and 450 V. The hole sizes were larger than actual pinhole defects; the plasma density was in the 10,000 per cu cm range, which is considerably lower than the density of 1,000,000 per cu cm found at low-earth-orbit altitudes. Despite these inadequacies in the simulation, the experiments indicate that this type of probe is a useful diagnostic technique for investigating the plasma sheaths developing around pinhole defects.
The NASCAP/LEO code is used to simulate measurements taken at Jet Propulsion Laboratory of potentials near a simulated pinhole. The insulator near the high-voltage pinhole obeys an electric field boundary condition resulting from secondary electron hopping conductivity. The code predictions are in good agreement with the measurements.
New fabrication method produces pinhole-free film of cobalt silicide on silicon substrate. In new method, cobalt and silicon evaporated from electron-beam sources onto substrate of silicon having <111> crystal orientation. Materials deposited in stoichiometric ratio of two silicon atoms to one of cobalt, yielding single-crystal CoSi2 film 5 to 10 nm thick. Layer of amorphous silicon 1 to 2 nm thick deposited on CoSi2. Specimen then annealed at 550 degree C for 10 min. Absence of pinholes critical to operation of multilayer devices employing CoSi2 layers, such as metal base transistor.
A small device designed to measure the orbital attitude stability of the Long Duration Exposure Facility (LDEF) spacecraft is examined. The device used the reaction of Ag with O atoms, which convert the metal to a nonconducting black appearing oxide with high efficiency. The atmosphere at LDEF altitudes consists of more than 90 pct. atomic O. The device is a small hemispheric Ag surface facing a pinhole in a metal plate on the front surface of the satellite. It was expected that the stream of O atoms, travelling at a relatively velocity of 8 km/s would pass through the pinhole and strike the Ag surface at the geometric center, producing a circular black spot. In fact, the position of the spot has clearly shown that the LDEF was rotated by 8.0 + or - 0.4 deg from its nominal attitude, but that it was remarkably stable about this offset. The ellipticity of the recorded spot was attributed to a yaw oscillation of + or - 0.2 deg, however it was previously noted, that the co-rotation of the Earth's atmosphere should produce a sweeping of the atom beam vector of ca. + or - 1.5 deg about the surface normal. Such an effect was not visible in this experiment.