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The 2024 Plasma Processing Science GRC and GRS took place from July 20, 2024 through July 26, 2024 at the Proctor Academy in Andover, New Hampshire.
A vacuum-free, high-throughput synthesis of indium tin oxide (ITO) via Combustion Oxidation with Rapid Plasma Processing (CORP) utilizes a solution-based exothermic combustion reaction to generate the oxide with tunable control of either amorphous or crystalline phases. A subsequent open-air, forming gas plasma treatment is used to introduce oxygen vacancies and promote crystallization. Here, the evolution of the oxide structure is elucidated by extended X-ray absorption spectroscopy fine structure analysis. Using CORP, fabrication of 300 cm 2 of ITO possessing a champion sheet resistance of 38 Ω sq. −1 , visible transmission of 89%, conductivity stability for over 250 days, roughness < 2nm, and Haacke figure of merit (%T 550nm 10 /R s ) of 0.012 Ω −1 is achieved. Cost modeling of CORP demonstrates up to a 67% reduction in price for TCOs using fully continuous, in-line unit operations compared with vacuum sputtering. The work shows a path toward a low-cost, vacuum-free manufacturing method for TCOs at commercial scales.
Solid-state electrolytes, such as lithium lanthanum zirconium oxide (LLZO), show promise as technologies for next-generation high-energy-density batteries, but commercial development has been hindered by a lack of scalable processing methods. Current fabrication methods are costly or require long annealing steps to create dense films. We report an atmospheric pressure blown-arc nitrogen plasma jet process to rapidly form sub-micrometer-thick, dense amorphous LLZO (a-LLZO) films from sol-gel precursors. Films are processed in less than 2 min, an order of magnitude faster than what has previously been reported. We demonstrate 500-nm-thick a-LLZO films processed at 350°C with an ionic conductivity of 2 × 10 −6 S/cm at 30°C and 2 × 10 −3 S/cm at 100°C and a conductance of 19 S at 100°C, the highest conductance of any LLZO phase to date. Here, the films exhibit outstanding smooth surface morphology with low defectivity, advancing atmospheric plasma processing as a scalable processing method for solid-state electrolytes.
A study of the niobium oxide structure is presented here, focusing on the niobium suboxides. Multiple steps of argon sputtering and XPS measurements were carried out until the metal surface was exposed. Subsequently, the sample was exposed to air for different time intervals and the oxide regrowth was studied. In addition, three Nb samples prepared with different surface treatments were studied before and after being subjected to plasma processing. The scope is investigating the microscopic effect that the reactive oxygen contained in the glow discharge may have on the niobium surface. This study suggests that the Nb 2 O 5 thickness may increase. Nevertheless, since the Nb 2 O 5 is dielectric, its thickening would not negatively affect the cavity performance.
A study of the niobium oxide structure is presented here, focusing on the niobium suboxides. Multiple steps of argon sputtering and XPS measurements were carried out until the metal surface was exposed. Subsequently, the sample was exposed to air for different time intervals and the oxide regrowth was studied. In addition, three Nb samples prepared with different surface treatments were studied before and after being subjected to plasma processing. The scope is investigating the microscopic effect that the reactive oxygen contained in the glow discharge may have on the niobium surface. This study suggests that the Nb 2 O 5 thickness may increase. Nevertheless, since the Nb 2 O 5 is dielectric, its thickening would not negatively affect the cavity performance.
Here, we demonstrate that ambient pressure x-ray photoelectron spectroscopy (APXPS) can be used for in situ studies of dynamic changes in surface chemistry in a plasma environment. This opens a new and vast application space for XPS and greatly complements modern spectroscopy techniques to probe plasma-solid/liquid interactions relevant to process monitoring in the semiconductor industry, bio-medical plasma applications and plasma remediation technologies. Hexagonal boron nitride (h-BN) grown on Cu was used in this study as a well-defined model system for plasma process monitoring and because of its unique chemical, optical and electrical properties that make it a prospective material for advanced electronics. To better understand the stability and surface chemistry of h-BN during plasma assisted processing, we track in real time the plasma-induced chemical state changes of B, N and the underlying Cu substrate using APXPS equipped with an AC discharge plasma source operating at 13 Pa. Residual gas analysis (RGA) mass-spectra were concurrently collected during plasma-XPS to track reaction products formed during plasma exposure. A clear reduction of Cu x O is seen, while an h-BN layer remains intact, suggesting hydrogen radical (H • ) species can attack the exposed and h-BN covered Cu oxide patches and partially reduce the underlying substrate without significantly damaging the overlaying h-BN, which is of practical importance for development of h-BN encapsulated devices and interfaces. In addition to demonstration of plasma-XPS capabilities we discuss the observed challenges (e.g., parasitic plasma-chamber walls reactions and charging effects) and propose potential solutions.
Jefferson Lab began a plasma processing program starting in the spring of 2019. Plasma processing is a common technique for removing hydrocarbons from surfaces, which increases the work function and reduces the secondary emission coefficient. Unlike helium processing which relies on ion bombardment of the field emitters, plasma processing uses free oxygen produced in the plasma to break down the hydrocarbons on the surface of the cavity. The residuals of the hydrocarbons in the form of water, carbon monoxide and carbon dioxide are removed from the cryomodule as part of the process gas flow. The initial focus of the effort is processing C100 cavities by injecting RF power into the HOM coupler ports. We will then start investigating processing of C50 cavities by introducing RF into the fundamental power coupler. The plan is to start processing cryomodules in the CEBAF tunnel in the mid-term future, with a goal of improving the operational gradients and the energy margin of the linacs. This work will describe the systems and methods used at JLAB for processing cavities using an argon oxygen gas mixture. Before and after plasma processing results will also be presented.
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What are the major goals of the project? Goal 1: Optimize interactively processing of the single-cell cavity by combining plasma treatment and vertical cold bath testing. Continue using single cell cavity as the test bed for new applications. Goal 2: Work on upgrading the plasma etching technology for multi-cell SRF cavities. Goal 3: Develop and adapt discharge configurations to critical cavity regions including the electron beam weld (EBW) and iris areas. Goal 4: Develop tailored methods to prepare surface properties for a specific function prior to any additional modification, such as (but not limited to) surface passivation in preparation of other superconducting materials and structures.
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Final Conference Program & Registration List
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