Solid state power switching for NASA's deep space missions
JPL has focused the development of solid-state power switches to meet the challenging environmental requirements of deep space missions.
solid state power switch PASM↗
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The dc-to-dc converters employing staggered-phase power switches with two-loop control
A switched inductor voltage is coupled to a sense winding in each phase, and all sense windings are connected in series to one of two feedback loops to provide a signal that indicates when one of the power switches is on as the principal determinant of switching instants. A sequencer is triggered each time a pulse generator is triggered to turn on a different power switch in sequence at each switching instant.
Wester, G. W.↗
Liquid Nitrogen Temperature Operation of a Switching Power Converter
The performance of a 42/28 V, 175 W, 50 kHz pulse-width modulated buck dc/dc switching power converter at liquid nitrogen temperature (LNT) is compared with room temperature operation. The power circuit as well as the control circuit of the converter, designed with commercially available components, were operated at LNT and resulted in a slight improvement in converter efficiency. The improvement in power MOSFET operation was offset by deteriorating performance of the output diode rectifier at LNT. Performance of the converter could be further improved at low temperatures by using only power MOSFET's as switches. The use of a resonant topology will further improve the circuit performance by reducing the switching noise and loss.
Ray, Biswajit↗
A new approach to the minimum weight/loss design of switching power converters
A new technique using the mathematical nonlinear programming ALAG is proposed to facilitate design optimizations of switching power converters. This computer-aided approach provides a minimum weight (or loss) design down to the details of component level and concurrently satisfies all related power-circuit performance requirements. It also provides such design insights as tradeoffs between power loss and system weight as the switching frequency is increased.
Lee, F. C.↗
High-Speed, high-power, switching transistor
Silicon transistor rate for 200 angstroms at 400 to 600 volts combines switching speed of transistors with ruggedness, power capacity of thyristor. Transistor introduces unique combination of increased power-handling capability, unusally low saturation and switching losses, and submicrosecond switching speeds. Potential applications include high power switching regulators, linear amplifiers, chopper controls for high frequency electrical vehicle drives, VLF transmitters, RF induction heaters, kitchen cooking ranges, and electronic scalpels for medical surgery.
Carnahan, D.↗
Development of a Solid State Power Switch for the Cassini Spacecraft
The Cassini spacecraft uses a new hybrid device to replace the load switching relays used on previous missions. These hybrid devices provide additional functions such as circuit breaking, controlled voltage turn-on and current limiting features. The current limiting function makes an uninterruptible power system possible. This hybrid, the Solid State Power Switch (SSPS), performs the function of connecting the 192 Cassini loads to the spacecraft power bus in response to commands from the Command and Data subsystem.
Cassini↗
A dc model for power switching transistors suitable for computer-aided design and analysis
The proposed dc model for bipolar junction power switching transistors is based on measurements which may be made with standard laboratory equipment. Those nonlinearities which are of importance to power electronics design are emphasized. Measurements procedures are discussed in detail. A model formulation adapted for use with a computer program is presented, and a comparison between actual and computer-generated results is made.
Wilson, P. M.↗
A dc model for power switching transistors suitable for computer-aided design and analysis
A model for bipolar junction power switching transistors whose parameters can be readily obtained by the circuit design engineer, and which can be conveniently incorporated into standard computer-based circuit analysis programs is presented. This formulation results from measurements which may be made with standard laboratory equipment. Measurement procedures, as well as a comparison between actual and computed results, are presented.
Wilson, P. M.↗
Selecting Wire Sizes For Switching Power Supplies
Computer program eliminates trial and error. Determines size and number of strands of wire for low resistance at high frequency in switching power supplies.
Mclyman, W. T.↗
High Power Switching Transistor
Improved switching transistors handle 400-A peak currents and up to 1,200 V. Using large diameter silicon wafers with twice effective area as D60T, form basis for D7 family of power switching transistors. Package includes npn wafer, emitter preform, and base-contact insert. Applications are: 25to 50-kilowatt high-frequency dc/dc inverters, VSCF converters, and motor controllers for electrical vehicles.
Hower, P. L.↗
Power-Switching Circuit
Functions of circuit breakers, meters, and switches combined. Circuit that includes power field-effect transistors (PFET's) provides on/off switching, soft starting, current monitoring, current tripping, and protection against overcurrent for 30-Vdc power supply at normal load currents up to 2 A. Has no moving parts.
Praver, Gerald A.↗
PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]
The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Specifying capacitors for performance and reliability in switching power supplies
The three most commonly used switching circuits are the full bridge converter, the half bridge converter, and the forward converter. All three circuits use the same pulse width concept for regulation with the major difference being how many transistors are used for power handling. The full bridge uses four transistors, the half bridge uses two, and the forward converter uses one. In practical design, forward converters are used at 300 watts and below, half bridges at 300 to 600 watts, and full bridges above 600 watts. Regulation is achieved by alternately saturating diagonal pairs of transistors in the full bridge, alternately saturating transistors in the half bridge, and simply pulse modulating one transistor in the forward converter.
Greenhalgh, F. E.↗
Preliminary study, analysis and design for a power switch for digital engine actuators
Innovative control configurations using high temperature switches to operate actuator driving solenoids were studied. The impact on engine control system life cycle costs and reliability of electronic control and (ECU) heat dissipation due to power conditioning and interface drivers were addressed. Various power supply and actuation schemes were investigated, including optical signal transmission and electronics on the actuator, engine driven alternator, and inside the ECU. The use of a switching shunt power conditioner results in the most significant decrease in heat dissipation within the ECU. No overall control system reliability improvement is projected by the use of remote high temperature switches for solenoid drivers.
Beattie, E. C.↗
High-temperature optically activated GaAs power switching for aircraft digital electronic control
Gallium arsenide high-temperature devices were fabricated and assembled into an optically activated pulse-width-modulated power control for a torque motor typical of the kinds used in jet engine actuators. A bipolar heterojunction phototransistor with gallium aluminum arsenide emitter/window, a gallium arsenide junction field-effect power transistor and a gallium arsenide transient protection diode were designed and fabricated. A high-temperature fiber optic/phototransistor coupling scheme was implemented. The devices assembled into the demonstrator were successfully tested at 250 C, proving the feasibility of actuator-located switching of control power using optical signals transmitted by fibers. Assessments of the efficiency and technical merits were made for extension of this high-temperature technology to local conversion of optical power to electrical power and its control at levels useful for driving actuators. Optical power sources included in the comparisons were an infrared light-emitting diode, an injection laser diode, tungsten-halogen lamps and arc lamps. Optical-to-electrical power conversion was limited to photovoltaics located at the actuator. Impedance matching of the photovoltaic array to the load was considered over the full temperature range, -55 C to 260 C. Loss of photovoltaic efficiency at higher temperatures was taken into account. Serious losses in efficiency are: (1) in the optical source and the cooling which they may require in the assumed 125 C ambient, (2) in the decreased conversion efficiency of the gallium arsenide photovoltaic at 260 C, and (3) in impedance matching. Practical systems require improvements in these areas.
Berak, J. M.↗
Class E/F switching power amplifiers
The present invention discloses a new family of switching amplifier classes called class E/F amplifiers. These amplifiers are generally characterized by their use of the zero-voltage-switching (ZVS) phase correction technique to eliminate of the loss normally associated with the inherent capacitance of the switching device as utilized in class-E amplifiers, together with a load network for improved voltage and current wave-shaping by presenting class-F.sup.-1 impedances at selected overtones and class-E impedances at the remaining overtones. The present invention discloses a several topologies and specific circuit implementations for achieving such performance.
Hajimiri, Seyed-Ali↗
Novel shift register eliminates logic gates and power switching circuits
Register requiring two integrated circuits per stage has nominal power dissipation of 3.5 mW per stage, its use eliminates reset pulse, allowing data transfer to occur in less than 1 microsecond, and eliminates power application to both right and left portions of the register simultaneously.
Cliff, R. A.↗
Power Actuation and Switching Module (PASM) Power Switch Slice (PSS) Power Control Slice (PCS)
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PASM PSS PCS power switch control actuation↗