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Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.

Single Event Effects↗

Current Status and Future Challenges in Risk-Based Radiation Engineering

This presentation covers the basis and challenges for radiation effects in electronic systems. The three main types of radiation effects in electronics are: 1) total ionizing dose (TID), 2) total non-ionizing dose (TNID) / displacement damage dose (DDD), and 3) single-event effect (SEE). Some content on relevant examples of effects, current concerns, and possible environmental model-driven solutions are also included.

Total Ionizing Dose (TID)↗

Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology

Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.

Lauenstein, Jean-Marie↗

Resources for Radiation Test Data

The performance of electronic devices in a space radiation environment is often limited by susceptibility to single-event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Interpreting the results of SEE, TID, and DD testing of complex devices is quite difficult given the rapidly changing nature of both technology and the related radiation issues. Radiation testing is performed to establish the sensitivities of candidate spacecraft electronics to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transients (SETs), TID, and DD effects. Knowing where to search for these test results is a valuable resource for the aerospace engineer or spacecraft design engineer. This poster is intended to be a resource tool for finding radiation test data.

Single Event Effects (SEE)↗

A NASA Perspective and Validation and Testing of Design Hardening for the Natural Space Radiation Environment (GOMAC Tech 03)

With the dearth of dedicated radiation hardened foundries, new and novel techniques are being developed for hardening designs using non-dedicated foundry services. In this paper, we will discuss the implications of validating these methods for the natural space radiation environment issues: total ionizing dose (TID) and single event effects (SEE). Topics of discussion include: Types of tests that are required, Design coverage (i.e., design libraries: do they need validating for each application?) A new task within NASA to compare existing design. This latter task is a new effort in FY03 utilizing a 8051 microcontroller core from multiple design hardening developers as a test vehicle to evaluate each mitigative technique.

Day, John H.↗

Plug-and-Play Environmental Monitoring Spacecraft Subsystem

A Space Environment Monitor (SEM) subsystem architecture has been developed and demonstrated that can benefit future spacecraft by providing (1) real-time knowledge of the spacecraft state in terms of exposure to the environment; (2) critical, instantaneous information for anomaly resolution; and (3) invaluable environmental data for designing future missions. The SEM architecture consists of a network of plug-and- play (PnP) Sensor Interface Units (SIUs), each servicing one or more environmental sensors. The SEM architecture is influenced by the IEEE Smart Transducer Interface Bus standard (IEEE Std 1451) for its PnP functionality. A network of PnP Spacecraft SIUs is enabling technology for gathering continuous real-time information critical to validating spacecraft health in harsh space environments. The demonstrated system that provided a proof-of-concept of the SEM architecture consisted of three SIUs for measurement of total ionizing dose (TID) and single event upset (SEU) radiation effects, electromagnetic interference (EMI), and deep dielectric charging through use of a prototype Internal Electro-Static Discharge Monitor (IESDM). Each SIU consists of two stacked 2X2 in. (approximately 5X5 cm) circuit boards: a Bus Interface Unit (BIU) board that provides data conversion, processing and connection to the SEM power-and-data bus, and a Sensor Interface Electronics (SIE) board that provides sensor interface needs and data path connection to the BIU.

Patel, Jagdish↗

Characterization and recovery of Deep Sub Micron (DSM) technologies behavior under radiation

This paper serves a twofold purpose: characterize the behavior of a reconfigurable chip exposed to radiation; and demonstrate a method for functionality recovery due to Total Ionizing Dose (TID) effects. The experiments are performed using a PL developed reconfigurable device, a Field Programmable Transistor Array (FPTA). The paper initially describes experiments on the characterization of the NMOS transistor behavior for TID values up to 300krad. The behavior of analog and digital circuits downloaded onto the FPTA chip is also assessed for TID effects. This paper also presents a novel approach for circuit functionality recovery due to radiation effects based on Evolvable Hardware. The key idea is to reconfigure a programmable device, in-situ, to compensate, or bypass its degraded or damaged components. Experiments with total radiation dose up to 300kRad show that while the functionality of a variety of circuits, including digital gates, a rectifier and a Digital to Analog Converter implemented on a FPTA-2 chip is degraded/lost at levels before 200kRad, the correct functionality can be recovered through the proposed evolutionary approach and the chips are able to survive higher radiation, for several functions in excess of total radiation dose of 250kRad.

evolvable hardware↗

Radiation Effects on DC-DC Converters

In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.

Zhang, De-Xin↗

JSC Avionics Ionizing Radiation Effects Standard (AIRES)

This document, the JSC Engineering Directorate Avionics Ionizing Radiation Effects Standard (AIRES), provides design, test, and analysis requirements to ensure electronic hardware meets functional, performance and reliability requirements in the mission ionizing radiation environment. This suite of activities is referred to as Radiation Hardening Assurance (RHA) and is an integral part of the hardware design process.

Ionizing Radiation↗

On the Utilization of In-flight Radiation-induced Performance Data and Anomaly Resolution of Commercial Off the Shelf (COTS) Electronics

This viewgraph presentation presents an overview of the use of in-flight science data to review the radiation effects on commercial off the shelf (COTS) electronics used in recent spacecraft missions. The authors review the hazards that the space radiation environment pose for spacecraft electronics. They specifically discuss long term effects such as total ionizing dose (TID) and short term effects like single particle events (SEE). The advantages of using COTS electronics despite not being radiation hardened are mentioned. The reasons cite for tracking in-flight performance of COTS electronics include: anomaly resolution, validate ground tests and environmental predictions and provide lessons for future designers. Sample radiation impacts of science data from the following missions are analyzed: SOHO/LASCO 3 Coronograph, Microwave Anisotrophy Probe, Hubble Space Telescope and Chandra X-Ray Observatory.

Kenneth A. LeBel↗

Solid State Drive Radiation Assurance With Active Testing

Single-event effects (SEE) and total ionizing dose (TID) data are presented for several automotive- and industrial-grade solid-state drives, and the effects of different active test configurations on hardness assurance are explored.

dose↗

The Probability of False Go/No-Go Determined by GOES Proton Flux: Proposed Launch Constraints for Avoiding Damaging Solar Energetic Particle Events

The space environment is full of harmful radiation and high energy particles that can cause damage to materials and affect computer systems by e.g., single event effects (SEEs), total ionizing dose (TID), etc. There are three main sources of high energy particles: Trapped radiation in Earth's Van Allen belts (electrons and protons); Solar energetic particles (SEPs) (protons and heavy ions); Galactic cosmic rays (GCRs) (protons and heavy ions). In this study, we focus on the SEPs and their time series and energy spectrum to quantify probabilities of launch go/no-go. The SEPs originate from solar particle events (SPEs) that are associated with a solar flare and/or a coronal mass ejection (CME). These events are difficult to predict. Recent work has been done on these prediction techniques. The Geostarionary Operational Environmental Satellite (GOES) has been observing SEPs for decades. The greater than 10 megaelectronvolt proton flux is shown in Figure 2 since 1986. The SEPs are influenced by the 11-year solar cycle and typically come from active regions on the Sun.

DeStefano, Anthony M.↗

Radiation Hardness Assurance (RHA): Challenges and New Considerations

Use of commercial-off-the-shelf (COTS) components and emerging technologies often require space flight missions to accept elevated risk. The Radiation Hardness Assurance (RHA) flow includes environment definition, hazard evaluation, requirements definition, evaluation of design, and design trades to accommodate and mitigate the risk a project or program takes. Depending on the mission profile and environment, different missions may not necessarily benefit from the same risk reduction efforts or cost reduction attempts. While this poses challenges for the radiation engineer, it also presents opportunities to tailor the RHA flow to minimize risk based on the environment or design criticality while remaining within budget. This presentation will focus on an approach to RHA amidst the present challenges, using the same RHA flow as in the past, with examples from recent radiation test results. The current challenges and the types of risk will be identified. How these risks drive requirements development and realization will be explained with examples of device results and data for single event effects (SEE) and in one case total ionizing dose (TID).

Radiation Hardness Assurance (RHA); Risk Managemen↗

Mission Radiation Environment Modeling and Analysis: Avionics Trade Study for GCD Rad-Neuro Project

The two main objectives of this trade study are characterizing the mission radiation environment for multiple Design Reference Missions (DRM) and analysis of radiation effects on avionics with the goal of producing radiation tolerant Neuromorphic Computing processor chips with innovative radiation-induced fault mitigation. The NASA process for defining radiation requirements for flight avionics is applied to this domain. The effects of trapped protons and electrons in the Van Allen radiation belts predominates in Low-Earth-Orbit (LEO) and the solar wind, solar flares and Galactic Cosmic Rays (GCRs) are the dominant radiation challenge in the open space between the planets of our solar system. The nature and energy of the particles that cause circuit upset and failure is very different in the two regimes. Two results are produced from the radiation models: determining the Total Integrated Dose (TID) experienced by avionics for a given DRM and predicting the Single Event Effects (SEE) rates for avionics during high rate exposure. These tools are applied to existing semiconductors and can be used for predicting the radiation performance of future semiconductors based on early radiation testing of new devices.

Space Radiation↗

Overview of Non-Volatile Testing and Screening Methods

Testing methods for memories and non-volatile memories have become increasingly sophisticated as they become denser and more complex. High frequency and faster rewrite times as well as smaller feature sizes have led to many testing challenges. This paper outlines several testing issues posed by novel memories and approaches to testing for radiation and reliability effects. We discuss methods for measurements of Total Ionizing Dose (TID).

Irom, Farokh↗

Radiation Effects: Overview for Space Environment Specialists

Radiation Hardness Assurance (RHA) methodologies need to evolve to capitalize on the increased flexibility introduced by new models of space radiation environments. This presentation examines the characteristics of various radiation threats, the sources of error that RHA methodologies seek to control and the contributions of environment models to those errors. The influence of trends in microelectronic device technology is also considered.

Galactic Cosmic Ray (GCR)↗