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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Slow Crack Growth and Fracture Toughness of Sapphire for the International Space Station Fluids and Combustion Facility

The fracture toughness, inert flexural strength, and slow crack growth parameters of the r- and a-planes of sapphire grown by the Heat Exchange Method were measured to qualify sapphire for structural use in the International Space Station. The fracture toughness in dry nitrogen, K(sub Ipb), was 2.31 +/- 0.12 MPa(square root of)m and 2.47 +/- 0.15 MPa(squre root of)m for the a- and r-planes, respectively. Fracture toughness measured in water via the operational procedure in ASTM C1421 was significantly lower, K(sub Ivb) = 1.95+/- 0.03 MPa(square root of)m, 1.94 +/- 0.07 and 1.77 +/- 0.13 MPa(square root of)m for the a- , m- and r-planes, respectively. The mean inert flexural strength in dry nitrogen was 1085 +/- 127 MPa for the r-plane and 1255 +/- 547 MPa for the a-plane. The power law slow crack growth exponent for testing in water was n = 21 +/- 4 for the r-plane and n (greater than or equal to) 31 for the a-plane. The power law slow crack growth coefficient was A = 2.81 x 10(exp -14) m/s x (MPa(squre root of)m)/n for the r-plane and A (approx. equals)2.06 x 10(exp -15) m/s x (MPa(square root of)m)/n for the a-plane. The r- and a-planes of sapphire are relatively susceptible to stress corrosion induced slow crack growth in water. However, failure occurs by competing modes of slow crack growth at long failure times and twinning for short failure time and inert environments. Slow crack growth testing needs to be performed at low failure stress levels and long failure times so that twinning does not affect the results. Some difficulty was encountered in measuring the slow crack growth parameters for the a-plane due to a short finish (i.e., insufficient material removal for elimination of the damage generated in the early grinding stages). A consistent preparation method that increases the Weibull modulus of sapphire test specimens and components is needed. This would impart higher component reliability, even if higher Weibull modulus is gained at the sacrifice of absolute strength of the component. The current specification frequently used for the preparation of sapphire test specimens and components (e.g., a "60/40" scratch-dig finish) is inadequate to avoid a short finish.

Salem, Jonathan A.↗
NASA NTRS1992

Sapphire-fiber-based intrinsic Fabry-Perot interferometer

A sapphire optical fiber intrinsic Fabry-Perot interferometric sensor is demonstrated. A length of multimode sapphire fiber that functions as a Fabry-Perot cavity is spliced to a silica single-mode fiber. The interferometric signals of this sensor are produced by the interference between the reflection from the silica-sapphire fiber splice and the reflection from the free end face of the sapphire fiber. This sensor has been demonstrated for temperature measurement. A resolution of 0.2 C has been obtained over a measurement range of 310 C to 976 C.

Wang, Anbo↗
NASA NTRS1992

Buffer layers for high-Tc thin films on sapphire

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

Wu, X. D.↗
NASA NTRS1994

Microwave Frequency Discriminator With Sapphire Resonator

Cooled sapphire resonator provides ultralow phase noise. Apparatus comprises microwave oscillator operating at nominal frequency of about 8.1 GHz, plus frequency-discriminator circuit measuring phase fluctuations of oscillator output. One outstanding feature of frequency discriminator is sapphire resonator serving as phase reference. Sapphire resonator is dielectric ring resonator operating in "whispering-gallery" mode. Functions at room temperature, but for better performance, typically cooled to operating temperature of about 80 K. Similar resonator described in "Sapphire Ring Resonator for Microwave Oscillator" (NPO-18082).

Santiago, David G.↗
NASA NTRS2002

Ion Milling of Sapphire

The ion figuring system at the Marshall Space Flight Center has been successfully used for at least three previous investigations into the ion milling of metals. The research was directed toward improving the surface quality of X-ray directing optics. These studies were performed on surfaces that were already hand polished to an excellent surface quality and were intended to remove the residual unwanted figure left by those techniques. The ion milling was typically carried out on test surfaces or mandrels that were several centimeters in width and length. The good thermal conductivity of the metal samples allowed the ion beam to be directed onto the sample for an indefinite period of time. This is not true of sapphire or most electrical insulators and problems have arisen in recent attempts to ion mill thin samples of sapphire. The failure and fracture of the material was likely due to thermal stresses and the relatively low thermal conductivity of sapphire (compared to most metals), These assumed stresses actually provided the key as to how they might be monitored. A thermal gradient in the sapphire sample will induce an effective index of refraction change and because of the shape constraint and the crystal structure and simple thermal expansion, this index change will be nonuniform across the sample. In all but simple cubic crystal structures, this leads to a spatially nonuniform optical retardance induced on any polarized optical beam traversing the sample, and it is this retardance that can be monitored using standard polarimetric procedures.

Don A. Gregory↗
NASA NTRS2016

Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

Duzik, Adam J.↗
NASA NTRS1994

Temperature Compensated Sapphire Resonator for Ultra-Stable Oscillator Capability at Temperatures Above 77 Kelvin

We report on the design and test of a whispering gallery sapphire resonator for which the dominant (WGH xxxsubn11) microwave mode family shows frequency-stable, compensated operation for temperatures above 77 Kelvin. The resonator makes possible a new ultra-stable oscillator (USO) capability that promises performance improvements over the best available crystal quartz oscillators in a compact cryogenic package. A mechanical compensation mechanism, enabled by the difference between copper and sapphire expansion coefficients, tunes the resonator to cancel the temperature variation of sapphire's dielectric constant.

sapphire resonator frequency stability temperature↗
NASA NTRS1976

Shear strength of metal-sapphire contacts

The shear strength of polycrystalline Ag, Cu, Ni, and Fe contacts on clean (0001) sapphire has been studied in ultrahigh vacuum. Both clean metal surfaces and surfaces exposed to O2, Cl2, and C2H4 were used. The results indicate that there are two sources of strength of Al2O3-metal contacts: an intrinsic one that depends on the particular clean metal in contact with Al2O3 and an additional one due to intermediate films. The shear strength of the clean metal contacts correlated directly with the free energy of oxide formation for the lowest metal oxide, in accord with the hypothesis that a chemical bond is formed between metal cations and oxygen anions in the sapphire surface. Contacts formed by metals exposed to chlorine exhibited uniformly low shear strength indicative of van der Waals bonding between chlorinated metal surfaces and sapphire. Contacts formed by metals exposed to oxygen exhibited enhanced shear strength, in accord with the hypothesis that an intermediate oxide layer increases interfacial strength.

Pepper, S. V.↗
NASA NTRS1987

Titanium-doped sapphire laser research and design study

Three main topics were considered in this study: the fundamental laser parameters of titanium-doped sapphire, characterization of commercially grown material, and design of a tunable, narrow-linewidth laser. Fundamental parameters investigated included the gain cross section, upper-state lifetime as a function of temperature and the surface-damage threshold. Commercial material was found to vary widely in the level of absorption of the laser wavelength with the highest absorption in Czochralski-grown crystals. Several Yi:sapphire lasers were constructed, including a multimode laser with greater than 50mJ of output energy and a single-transverse-mode ring laser, whose spectral and temporal characteristics were completely characterized. A design for a narrow-linewidth (single-frequency) Ti:sapphire laser was developed, based on the results of the experimental work. The design involves the use of a single-frequency, quasi-cw master oscillator, employed as an injection source for a pulsed ring laser.

Moulton, Peter F.↗
NASA NTRS1987

Bonding Lexan and sapphire to form high-pressure, flame-resistant window

Flammable materials have been studied in normal gravity and microgravity for many years. Photography plays a major role in the study of the combustion process giving a permanent visual record that can be analyzed. When these studies are extended to manned spacecraft, safety becomes a primary concern. The need for a high-pressure, flame-resistant, shatter-resistant window permitting photographic recording of combustion experiments in manned spacecraft prompted the development of a method for bonding Lexan and sapphire. Materials that resist shattering (e.g., Lexan) are not compatible with combustion experiments; the material loses strength at combustion temperatures. Sapphire is compatible with combustion temperatures in oxygen-enriched atmospheres but is subject to shattering. Combining the two materials results in a shatter-resistant, flame-resistant window. Combustion in microgravity produces a low-visibility flame; however, flame propagation and flame characteristics are readily visible as long as there is no deterioration of the image. Since an air gap between the Lexan and the sapphire would reduce transmission, a method was developed for bonding these unlike materials to minimize light loss.

Richardson, William R.↗
NASA NTRS1986

Pulsed injection control of a titanium-doped sapphire laser

Injection control of a tunable Ti:sapphire laser using a narrow-bandwidth pulsed dye laser operating at a wavelength removed from the peak of the Ti:sapphire-laser gain curve is reported. The free-running Ti:sapphire laser had broadband laser emission from 750 to 790 nm. Injection at 727 nm resulted in essentially complete energy extraction at that wavelength in a 2.5-pm bandwidth matching the injection source.

Brockman, Philip↗
NASA NTRS1987

Measurement and analysis of cryogenic sapphire dielectric resonators and DROs

Presented are the experimental and computational results of a study on a new kind of dielectric resonator oscillator (DRO). It consists of a cooled, cylindrically symmetric sapphire resonator surrounded by a metallic shield and is capable of higher Q's than any other dielectric resonator. Isolation of fields to the sapphire by the special nature of the electromagnetic mode allows the very low loss of the sapphire itself to be expressed. Calculations show that the plethora of modes in such resonators can be effectively reduced through the use of a ring resonator with appropriate dimensions. Experimental results show Q's ranging from 3 x 10 to the 8th at 77 K to 10 to the 9th at 4.2 K. Performance is estimated for several types of DROs incorporating these resonators. Phase noise reductions in X-band sources are indicated at values substantially lower than those previously available.

Dick, G. J.↗
NASA NTRS1990

A modified pump laser system to pump the titanium sapphire laser

As a result of the wide tunability of the titanium sapphire laser NASA has sited it to be used to perform differential absorption lidar (DIAL) measurements of H2O vapor in the upper and lower troposphere. The titanium sapphire laser can provide a spectrally narrow (0.3 to 1.0 pm), high energy (0.5 to 1.0 J) output at 727, 762, and 940 nm which are needed in the DIAL experiments. This laser performance can be obtained by addressing the line-narrowing issues in a master oscillator and the high energy requirement in a fundamental mode oscillator. By injection seeding, the single frequency property of the master oscillator can produce a line narrow high energy power oscillator. A breadboard model of the titanium sapphire laser that will ultimately be used in NASA lidar atmospheric sensing experiment is being designed. The task was to identify and solve any problem that would arise in the actual laser system. One such problem was encountered in the pump laser system. The pump laser that is designed to pump both the master oscillator and power oscillator is a Nd:YLF laser. Nd:YLF exhibits a number of properties which renders this material an attractive option to be used in the laser system. The Nd:YLF crystal is effectively athermal; it produces essentially no thermal lensing and thermally induced birefringence is generally insignificant in comparison to the material birefringence resulting from the uniaxial crystal structure. However, in application repeated fracturing of these laser rods was experience. Because Nd:YLF rods are not commercially available at the sizes needed for this application a modified pump laser system to replace the Nd:YLF laser rod was designed to include the more durable Nd:YAG laser rods. In this design, compensation for the thermal lensing effect that is introduced because of the Nd:YAG laser rods is included.

Petway, Larry B.↗
NASA NTRS1991

Optical waveguide formed by cubic silicon carbide on sapphire substrates

Optical confinement in beta silicon carbide (beta-SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin beta-SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far-field mode patterns are shown. It is believed that this is the first step in validating a silicon carbide optoelectronic technology.

Tang, Xiao↗
NASA NTRS1991

Sapphire fiber interferometer for microdisplacement measurements at high temperatures

We report the use of a short-length, multimode sapphire rod as an extension to a Michelson configuration, but operated as a low-finesse Fabry-Perot cavity. We demonstrate the performance of such a device as an interferometric sensor, where the interference between the reflections from the sapphire-air interface and an air-metallic surface is observed for microdisplacement of the metallic surface which is placed close to the sapphire endface. We describe in detail the fabrication procedure and present results obtained from the detection of temperature changes, applied strain, and surface acoustic waves.

Murphy, Kent A.↗
NASA NTRS1993

Interfacial Shear Strength of Cast and Directionally Solidified Nial-Sapphire Fiber Composites

The feasibility of fabricating intermetallic NiAl-sapphire fiber composites by casting and zone directional solidification has been examined. The fiber-matrix interfacial shear strengths measured using a fiber push-out technique in both cast and directionally solidified composites are greater than the strengths reported for composites fabricated by powder cloth process using organic binders. Microscopic examination of fibers extracted from cast, directionally solidified (DS), and thermally cycled composites, and the high values of interfacial shear strengths suggest that the fiber-matrix interface does not degrade due to casting and directional solidification. Sapphire fibers do not pin grain boundaries during directional solidification, suggesting that this technique can be used to fabricate sapphire fiber reinforced NiAl composites with single crystal matrices.

Tewari, S. N.↗
NASA NTRS1996

High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

Barnes, A.↗
NASA NTRS2000

A Compact Ti:Sapphire Laser With its Third Harmonic Generation (THG) for an Airborne Ozone Differential Absorption Lidar (DIAL) Transmitter

A compact and high-pulse-energy Ti:Sapphire laser with its Third Harmonic Generation (THG) has been developed for an airborne ozone differential absorption lidar (DIAL) to study the distributions and concentrations of the ozone throughout the troposphere. The Ti:Sapphire laser, pumped by a frequency-doubled Nd:YAG laser and seeded by a single mode diode laser, is operated either at 867 nm or at 900 nm with a pulse repetition frequency of 20 Hz. High energy laser pulses (more than 110 mJ/pulse) at 867 nm or 900 nm with a desired beam quality have been achieved and utilized to generate its third harmonic at 289nm or 300nm, which are on-line and off-line wavelengths of an airborne ozone DIAL. After being experimentally compared with Beta-Barium Borate (beta - BaB2O4 or BBO) nonlinear crystals, two Lithium Triborate (LBO) crystals (5 x 5 x 20 cu mm) are selected for the Third Harmonic Generation (THG). In this paper, we report the Ti:Sapphire laser at 900 nm and its third harmonic at 300 nm. The desired high ultraviolet (UV) output pulse energy is more than 30 mJ at 300 nm and the energy conversion efficiency from 900 nm to 300 nm is 30%.

Chen, Songsheng↗