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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Optical and photoelectric properties of surface barrier diodes based on n- Hg3In2Te6 crystals

The high radiation resistance of Hg3In2Te6 (MIT) single crystals to large doses of ionizing radiation makes devices quite attractive. Such a feature of the crystal structure has not only important advantages, but also causes serious technological difficulties in doping and controlling the specific resistance within the required limits and type of conductivity of single crystals. These technological difficulties create serious problems when creating structures with a potential barrier, especially with a p-n junction. At the moment, there are no publications on the creation of a p-n junction based on MIT. The only alternative is to create a potential barrier such as a Schottky diode or a metal-dielectric-semiconductor structure. This limits the use of MIT to produce, for example, rectifier diodes that can operate at relatively high reverse bias voltages. The typical resistivity of single crystals of MIT of n-type conductivity, which are used for the manufacture of diodes and photodiodes, is approximately equal to ρ≈103-104 Ω×cm. Such a specific resistance leads to a relatively large resistance of the neutral part of the single crystal, which in turn limits the direct currents of the rectifier diodes and significantly limits an important parameter of photodiodes - the dynamic range of the watt-ampere characteristic. This problem arises from the relatively high series resistance of the substrate. For rectifier diodes, this relatively large series resistance leads to a significant forward bias voltage drop, which reduces both the rectification factor and the amount of rectified current. We have already created diodes and photodiodes on Cr/MIT/Cr single crystals with a specific resistance of ρ≈103-104 Ω×cm. The diodes had relatively small dark currents but had the disadvantage of a relatively large specific resistance of the substrate, which we have already discussed above [1,2,3].

Sklyarchuk, V.↗
DOE OSTI2025

Empirical thermophotovoltaic performance predictions and limits

Significant progress has been made in the field of thermophotovoltaics, with efficiency recently rising to over 40% due to improvements in cell design and material quality, higher emitter temperatures, and better spectral management. However, inconsistencies in trends for efficiency with semiconductor bandgap energy across various temperatures pose challenges in predicting optimal bandgaps or expected performance for different applications. To address these issues, here we present realistic performance predictions for various types of single-junction cells over a broad range of emitter temperatures using an empirical model based on past cell measurements. Our model is validated using data from different authors with various bandgaps and emitter temperatures, and an excellent agreement is seen between the model and the experimental data. Using our model, we show that in addition to spectral losses, it is important to consider practical electrical losses associated with series resistance and cell quality to avoid overestimation of system efficiency. Here, we also show the effect of modifying various system parameters such as bandgap, above and below-bandgap reflectance, saturation current, and series resistance on the efficiency and power density of thermophotovoltaics at different temperatures. Finally, we predict the bandgap energies for best performance over a range of emitter temperatures for different cell material qualities.

14 SOLAR ENERGY↗
DOE OSTI2024

Evaluating the Performance and Reliability of Screen-Printable Fire-Through Copper Paste on PERC Solar Cells

A bifacial silicon heterojunction solar cell demands approximately 210 mg usage of silver paste (9 busbars, 24.5%, bifacial, M6 size wafer). Copper is an excellent alternative to silver: 100x cheaper, similar elecvtrical resistivities, and 1000x more abundant. Successful demonstration of large area selective emitter PERC solar cells using Cu fire-through paste with FF approximately 75% and approximately 19%. Paste chemistry results in oxide-based Cu diffusion barrier, leading to good reliability of the devices: 1000h DHT giving a 3.5% efficiency drop. The additional series resistance still needs to be lowered. Printed and fired cell performance is governed mostly by pFF, especially J02 ; same for DHT degradation. Further improvement in printing and firing optimization for lower series resistance and higher FF.

Ag↗
DOE OSTI2025

UV + Damp Heat Induced Power Losses in Fielded Utility N-Type Si PV Modules

A recent trend in commercial PV modules is a transition to n-type silicon cells, including passivated emitter rear totally diffused (n-PERT), tunnel oxide passivated contact (TOPCon), and silicon heterojunction (SHJ). There is evidence via lab studies that some of these cells are more susceptible to UV induced degradation (UVID), yet there is a lack of confirmation that such degradation occurs in the field. Current IEC standards designed to screen for early module failures require only minimal UV exposure (15 kWh/m2 280-400 nm, ~2-3 months equivalent outdoor exposure). Here, we investigate fielded n-PERT silicon (Si) modules from a commercial utility that show power losses of ~2%/year. We present a comprehensive picture of the physics and chemistry of degradation supported by both module and cell electronic characterization (EL, PL, IV, EQE, and DLIT) and materials-level morphological and chemical analysis (SEM, EDS, XPS, FTIR, and HPLC). All sampled site modules show short circuit current (Isc) and open circuit voltage (Voc) losses when compared to unfielded spares, with the most severely degraded also having losses in fill factor (FF). We identify two different degradation modes contributing to overall power loss: (1) external quantum efficiency (EQE) measurements show losses in the blue range of the spectra, indicative of cell surface recombination losses, and (2) variations in high series resistance (Rs) at the cell level that are correlated with compositional differences in cell metallization. Using unfielded spares, we were able to reproduce Voc, Isc, and EQE losses via a minimum UV stress of 67.5 kWh/m2 (280-400 nm), 4.5x the exposure currently required in IEC 61215-2 (MQT 10). Degradation continued with additional UV dosage equivalent to the fielded modules (405 kWh/m2 total), with power loss leveling out at an average of 6.1%. Subsequent 1000 h of 85% RH/85degrees C damp heat testing showed that cells exposed to UV underwent additional severe series resistance degradation, even those without the susceptible paste composition seen in the field, whereas non-UV exposed cells saw little change. We attribute this to higher concentrations of acetic acid generated on the UV exposed area of the module, leading to degradation of the gridline/cell interface and high Rs. This study is unique in that it reproduces field observed utility scale UVID with an accelerated test and supports the need for standards development for longer UV exposure combined with other stress factors to catch materials interplay within a module package.

14 SOLAR ENERGY↗
DOE OSTI2020

In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing

An in-situ method is proposed for monitoring and estimating the power degradation of mc-Si photovoltaic (PV) modules undergoing thermo-mechanical degradation tests that primarily manifest through cell cracking, such as mechanical load tests, thermal cycling and humidity freeze tests. The method is based on in-situ measurement of the module’s dark current-voltage (I-V) characteristic curve during the stress test, as well as initial and final module flash testing on a Sun simulator. The method uses superposition of the dark I-V curve with final flash test module short-circuit current to account for shunt and junction recombination losses, as well as series resistance estimation from the in-situ measured dark I-Vs and final flash test measurements. The method is developed based on mc-Si standard modules undergoing several stages of thermo-mechanical stress testing and degradation, for which we investigate the impact of the degradation on the modules light I-V curve parameters, and equivalent solar cell model parameters. Experimental validation of the method on the modules tested shows good agreement between the in-situ estimated power degradation and the flash test measured power loss of the modules, of up to 4.31 % error (RMSE), as the modules experience primarily junction defect recombination and increased series resistance losses. However, the application of the method will be limited for modules experiencing extensive photo-current degradation or delamination, which are not well reflected in the dark I-V characteristic of the PV module.

14 SOLAR ENERGY↗
DOE OSTI2021

Cu-Local Structures and Their Relation with Nanoscale Electrical Performance in CdTe

For decades, copper has been introduced in CdTe devices to improve overall performance (open circuit voltage, fill factor, and series resistance). While multiple articles have reported on Cu-based defects, very little is known about how the local structure around the copper atom affects electrical performance. Using X-ray Absorption Near Edge Structure (XANES) coupled with X-ray microscopy we investigate good and poor performing region in Cu-doped CdTe devices. Our XANES coupled with theoretical standards by FEFF9 suggest that CU 2 Te phase and Cu Cd may be responsible for the high electrical performance of the regions under study. This correlation of structure-performance at the nanoscale offers a unique framework to understand and tune processes with deep implications to the overall electrical performance of the solar cell.

CdTe↗
DOE OSTI2023

High Performing Inverted Flexible Perovskite Solar Cells via Solution Phase Deposition of Yttrium-Doped SnO 2 Directly on Perovskite

Solution processing of flexible perovskite solar cells (f-PSCs) provides an avenue for scalable, high-throughput printing of lightweight, scalable, and cost-effective flexible solar cells. However, the deposition of fully solution-processed metal oxide charge transport layers on perovskites has been limited by solvent incompatibilities and high processing temperatures for metal oxide nanoparticles. In this study, we present high-performance, inverted f-PSCs from the direct deposition of yttrium doped SnO 2 nanoparticles functionalized with acetate on top of perovskite as an ink in anhydrous ethanol via blade coating. Yttrium doping improved device performance by improving the charge extraction leading with a decreased series resistance leading to improvements in the open-circuit voltage and fill factor. Furthermore, the champion power conversion efficiency for 0.1 cm 2 devices increased from 14.3% for undoped SnO 2 to 18.2% with 2% Y:SnO 2 doping, which is unprecedented for f-PSCs on ITO-PET substrate employing SnO 2 as an ETL.

14 SOLAR ENERGY↗
DOE OSTI2025

Scaling of energy delivered through an electrostatic discharge to a small series load

We study the energy delivered through a small-resistance series “victim” load during electrostatic discharge events in air. For gap lengths over 1 mm, the fraction of the stored energy delivered is mostly gap-length independent, with a slight decrease at larger gaps due to electrode geometry. The energy to the victim scales linearly with circuit capacitance and victim load resistance but is not strongly dependent on circuit inductance. This scaling leads to a simple approach to predicting the maximum energy that will be delivered to a series resistance for the case where the victim load resistance is lower than the spark resistance.

42 ENGINEERING↗
DOE OSTI2020

Activation Energy for Solder Bond Degradation: Thermal Cycling of Field-aged Modules at Multiple Upper Temperatures

The reliability of solder joints in the solar cell metallization-interconnect system influences the lifetime of photovoltaic modules. Two field-aged modules-one with Sn 62 Pb 36 Ag 2 solder at the solder joints (Solarex MSX 60), and the other with the standard Sn 60 Pb 40 solder (Siemens M55)-were subjected to a modified thermal cycling (TC) test of IEC 61215. Three sections in each module were maintained at 85 degrees C, 95 degrees C, and 105 degrees C during the 15-minute high temperature dwell time. Current equivalent to the module short-circuit current was injected through the module when the chamber temperature was above 25 degrees C to simulate regular field operation. This novel approach aims to induce thermomechanical fatigue (TMF) at the solder joints and intermetallic compound (IMC) formation at the metal/solder interfaces. The activation energy (E a ) for solder bond degradation was calculated based on the series resistance (R s ) increase in TC testing rather than power drop to avoid the effect of confounding variables. Module-level R s increase in MSX 60 module after TC800 cycles and in M55 module after TC400 cycles was 1.22% and 183.7%, respectively. The E a determined for the module with 2wt% Ag is 0.24 eV and for that with the standard solder is 0.27 eV. The solder bond degradation seems to have been driven by TMF rather than IMC formation for both modules.

14 SOLAR ENERGY↗
DOE OSTI2020

Activation Energy for End-of-Life Solder Bond Degradation: Thermal Cycling of Field-Aged PV Modules

The longevity of solar photovoltaic modules depends on the durability and reliability of their components, one of which is the solder bonds in interconnect ribbons. The solder joints experience stresses from thermal cycling and constant elevated temperatures (40 °C-70 °C) in regular field operation leading to thermo-mechanical fatigue and intermetallic compound formation. To study the end-of-life wear-out mechanisms and to obtain activation energy of solder bond degradation, here two field-aged modules from Arizona-a 21-year-old Solarex MSX60 module (with Sn62Pb36Ag2 at the solder joints) and an 18-year-old Siemens M55 module (with Sn60Pb40 at the solder joints)-underwent 800 and 400 modified thermal cycles, respectively. Using three heating blankets, each module had three temperature zones maintained at 85, 95, and 105 °C during the 15-min hot dwell time of the thermal cycle. Cell-level series resistance data obtained from three temperature zones enabled the calculation of activation energy for solder bond degradation for the MSX60 and the M55 modules to be 0.12 eV and 0.35 eV, respectively. From each temperature zone in both modules, busbar-solder samples were obtained, imaged through SEM, and analyzed with energy-dispersive X-ray spectroscopy. In the MSX60 module with traces of Ag in the solder material, phase segregation and growth were primarily observed at high temperatures. For M55 modules without Ag in the solder material, major phase segregation was observed in all temperature zones. The IMC thickness for both modules increased with increasing module temperature. The beneficial effect of Ag in solder material on mitigating solder bond degradation is presented.

14 SOLAR ENERGY↗
DOE OSTI2022

GaAs Thermophotovoltaic Patterned Dielectric Back Contact Devices with Improved Sub-Bandgap Reflectance

We demonstrate GaAs thermophotovoltaic (TPV) devices with a patterned dielectric back contact (PDBC) architecture, featuring a dielectric spacer between the semiconductor and back metal contact over most of the back surface for high reflectance, and metal point contacts over a smaller area for electrical conduction. In the TPV application, high sub-bandgap reflectance is needed to reflect unused sub-bandgap photons to the thermal emitter to minimize energy losses in this portion of the thermal spectrum. We explore different PDBC fabrication processes with SU-8 and SiO2 dielectric spacer layers to maximize sub-bandgap reflectance while minimizing series resistance to increase TPV conversion efficiency. We successfully demonstrate GaAs SU-8 PDBC TPV devices with 2200 degrees C blackbody-weighted sub-bandgap reflectance of 94.9% and 96.5% with and without a front metal grid, respectively. This is 0.7% and 2.3% (absolute) higher than the mean sub-bandgap reflectance of 94.2% for GaAs baseline TPV devices with 100% Au back contact with front metal grid. Lower sub-bandgap reflectance in TPV devices with front grids indicates the front grid induces light scattering leading to additional parasitic absorption in the TPV device. We also show that for higher contact coverage fractions, the PDBC reflectance cannot in general be treated by a linear interpolation using simple 1D transfer matrix method modeling and should be treated instead as a diffraction grating by solving Maxwell's equations in 3D.

energy storage↗
DOE OSTI2026

Reducing Internal Resistance in Activated Carbon Supercapacitors via Exfoliated Coal-Derived Graphene Additive

Low equivalent series resistance (ESR) is critical for high-rate energy storage devices (e.g., supercapacitors), and graphene is a promising additive for reducing ESR in carbon-based supercapacitor electrodes. However, graphene can be costly and difficult to produce at scale. This study investigates the addition of graphene, produced through electrochemical exfoliation of domestic coal-derived graphite, in activated carbon-based supercapacitors. The coal-derived graphene was incorporated at varying weight loadings and tested in symmetric supercapacitors with aqueous electrolytes. ESR was evaluated using both direct current internal resistance (DCIR) and electrochemical impedance spectroscopy (EIS) measurements. DCIR measurements revealed ESR reductions of ∼34%, ∼18%, and ∼21% at 3, 5, and 10 wt % loadings, respectively, compared to the baseline (0 wt %) of ∼0.54 Ω. These results were further confirmed by EIS measurements. Correspondingly, power density increased by ∼52%, ∼27%, and ∼35% at 3, 5, and 10 wt % loadings relative to the baseline (∼29 kW/kg). Additionally, the electrodes exhibited moderate increases in specific capacitance and energy density, along with stable cycling performance (capacitance retention above 85% after 100,000 cycles) and capacitive behavior (α = 0.95−0.97), suggesting favorable charge transfer kinetics. These findings highlight the potential of exfoliated coal-derived graphene as an effective additive for supercapacitor electrodes.

capacitors↗
DOE OSTI2021

Lamination of transparent conductive adhesives for tandem solar cell applications

A transparent conductive adhesive (TCA) interlayer for mechanically stacked multijunction solar cells provides adhesive strength and electrical connection between sub-cells when stacked. The fabrication of TCA sheets from an ethyl-vinyl acetate (EVA) matrix and silver coated compliant conductive microspheres, similar to industry-standard EVA encapsulant sheets, compatible with a standard lamination process was developed. Blade coating TCA sheets using 3D printed blades and testing of vertical conduction through the interlayer with a TCA conductivity jig allowed for reproducible measurements and low-cost fabrication. The supplemental information provides design files to enable other researchers to produce their own blades and testing jigs. We identified 0.5 mm as an optimal blade height for producing lab-scale TCA sheets and 120 °C at 3 psi for 10 min as the optimal vacuum lamination process to minimize resistance and possible damage to samples. For TCA sheets with coverages between 0.75% and 9%, the series resistance was approximately 0.2 O cm2 which should result in minimal losses for one-sun photovoltaic applications.

14 SOLAR ENERGY↗
DOE OSTI2025

Vertically Aligned Carbon Nanotubes Grown on Copper Foil as Electrodes for Electrochemical Double Layer Capacitors

This study reports a binder-free, catalyst-free method for fabricating vertically aligned carbon nanotubes (VACNTs) directly on copper (Cu) foil using plasma-enhanced chemical vapor deposition (PECVD) for electrochemical double-layer capacitor (EDLC) applications. This approach eliminates the need for catalyst layers, polymeric binders, or substrate pre-treatments, simplifying electrode design and enhancing electrical integration. The resulting VACNTs form a dense, uniform, and porous array with strong adhesion to the Cu substrate, minimizing contact resistance and improving conductivity. Electrochemical analysis shows gravimetric specific capacitance (C grav ) and areal specific capacitance (C areal ) of 8 F g −1 and 3.5 mF cm −2 at a scan rate of 5 mV/s, with low equivalent series resistance (3.70 Ω) and charge transfer resistance (0.48 Ω), enabling efficient electron transport and rapid ion diffusion. The electrode demonstrates excellent rate capability and retains 92% of its initial specific capacitance after 3000 charge–discharge cycles, indicating strong cycling stability. These results demonstrate the potential of directly grown VACNT-based electrodes for high-performance EDLCs, particularly in applications requiring rapid charge–discharge cycles and sustained energy delivery.

25 ENERGY STORAGE↗
DOE OSTI2021

Scalable semitransparent prototype organic photovoltaic module with minimal resistance loss

Semi-transparent organic photovoltaic (ST-OPV) cells are regarded as an attractive solution to building-integrated solar energy harvesting. Both the power conversion efficiency (PCE) and average photopic transmission (APT) of ST-OPVs have shown substantial increases in recent years. However, less attention has been paid to the area scaling of ST-OPV cells. In this work, we investigate the scalability of ST-OPV cells from 4 mm 2 to 1 cm 2 , as well as 9 cm 2 active area prototype module. By integrating both top and bottom metal grids onto the transparent electrodes, the series resistance loss of 1 cm 2 ST-OPV cell is significantly reduced, and is comparable to that of the grid-free 4 mm 2 cell. Nine 1 cm 2 cells are then connected in a series-parallel circuit to realize a prototype ST-OPV module. A 100% fabrication yield with only 5% PCE deviation among discrete cells is achieved. The semitransparent module shows PCE = 7.2 ± 0.1% under simulated AM 1.5G illumination at 1 sun intensity, which exhibits no connection resistance loss compared to that of the individual cells. The ST-OPV module exhibits an APT = 38.1 ± 1.1%, which enables a light utilization efficiency, LUE = 2.74 ± 0.09%. Here, the method demonstrates a promising way for ST-OPV modules to scale without compromising performance.

14 SOLAR ENERGY↗
DOE OSTI2021

Operating Stresses and Their Effects on Degradation of LSM-Based SOFC Cathodes

The performance of solid oxides fuel cells (SOFCs) with four different Mn excess of lanthanum strontium manganite (LSM) -based cathodes were examined under different temperatures (1,000 °C, 900 °C), current densities (0, 380, and 760 mA cm -2 ), and cathode atmospheres (p O 2 )=0.1,0.15,0.21) for durations ranging from 58 to 1,008 h. Each yttria-stabilized zirconia (YSZ) electrolyte-supported “button” cell had a porous Ni/YSZ composite anode and a porous LSM/YSZ composite cathode. The cells’ output voltage versus time were recorded and electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV) measurements were performed every 24 hours. The total area specific resistance (ASR) was calculated from these measurements. The values of ASR from both EIS and LSV were comparable between each other but lower than that from durability test. Distribution of relaxation times (DRT) analysis was performed to investigate the electrochemical processes and their corresponding relaxation frequencies as well as their attributions to the total ASR. The series resistance and parallel resistance that obtained from the equivalent circuit fit of the Nyquist plot were higher at low temperature and low p O 2 regardless of LSM compositions. The area of the peaks derived from DRT analysis increased with time during individual tests. The microstructures of the tested cells were examined using scanning electron microscopy and energy-dispersive x-ray spectroscopy (SEM/EDS). Manganese oxide particles were observed near the cathode-electrolyte interface after prolonged (1,008 h) testing in air of a cell with LSM of 11% manganese excess, and after a short test (58 h) under low oxygen (p O 2 = 0.10) in a cell with LSM of 5% manganese excess. However, the role of MnOx in cell degradation is still unknown.

08 HYDROGEN↗