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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Characterization of submicron matrix phyllosilicates from Murray and Nogoya carbonaceous chondrites

The combined techniques of high-resolution transmission electron microscopy and energy-dispersive X-ray analysis have been used to study dispersed, submicron phyllosilicates and the 'poorly characterized phase' of C2 matrix material. Morphologies and structure types observed are similar to terrestrial chrysotile. Distinctive morphologies and 7.3-A characteristic basal spacings combined with composition information rule out phyllosilicates other than serpentine group minerals as the predominant phyllosilicate material. The 'poorly characterized phase' is composed of chemically similar very fine-grained phyllosilicate and amorphous material. The observation of interstratified phyllosilicate material sheds additional doubt on compositional data which is not accompanied by structural data from the same particle.

Mckee, T. R.↗
NASA NTRS1980

Submicron particles in meteor streams

Submicron particles (mass less than 10 to the -15th g) were observed in certain meteor streams by impact detectors on satellite Explorer 46. This unexpected finding leads to conclusions about the nature and origin of the particles and about the importance of nongravitational forces.

Singer, S. F.↗
NASA NTRS1983

GaAs microwave devices and circuits with submicron electron-beam defined features

This paper describes the fabrication and application of GaAs FET's, both as discrete microwave devices and as the key active components in monolithic microwave integrated circuits. The performance of these devices and circuits is discussed for frequencies ranging from 3 to 25 GHz. The crucial fabrication step is the formation of the submicron gate by electron-beam lithography.

Wisseman, W. R.↗
NASA NTRS1985

Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron-beam-induced current and its derivative Determination of diffusion lengths in the low micron and submicron ranges

A systematic and quantitative analysis is carried out to investigate the effects of the shape (point, cube, Gaussian) and size of the generation volume, the surface recombination velocity, and the diffusion length on the electron-beam-induced current (EBIC) and its derivative (DEIC). Thick homogeneously doped samples exhibiting diffusion lengths in the low micron and submicron range are considered. The results are presented in computed EBIC curves as a function of scanning distance and of the ratio true diffusion length/effective diffusion length. Shown using these curves are: (1) a simple and yet rigorous method for the determination of the true diffusion length, taking into consideration all of the factors cited above, (2) a method for the rapid determination of the surface recombination velocity, (3) the condition under which the source shape becomes insignificant, and (4) a new value for the lower limit of the diffusion length which can be determined by the EBOC technique.

Luke, K. L.↗
NASA NTRS1985

Spectral and other physicochemical properties of submicron powders of hematite (alpha-Fe2O3), maghemite (gamma-Fe2O3), magnetite (Fe3O4), goethite (alpha-FeOOH), and lepidocrocite (gamma-FeOOH)

The spectral properties (0.35-2.20 microns) of submicron powders of hematite, maghemite, magnetite, goethite, and lepidocrocite are determined. Other physicochemical data are obtained for the powders in order to determine if deviations from stoichiometry occur due to their small particle size, to determine their state of chemical and phase purity, and to determine the physical characteristics of the individual powders. The physicochemical data obtained include mean particle diameter, discrete particle shape, chemical composition, crystallographic phase, magnetic parameters, and Moessbauer parameters. The positions of the spectral features for the hematite, maghemite, and magnetite powders are independent of temperature over the interval between about +20 and -110 C. For the goethite and lepidocrocite powders, a small shift of about 0.02 micron to shorter wavelengths is observed for some of the features after cooling to about -110 C. The spectral properties of the iron oxides and oxyhydroxides are important not only for understanding the basic physics and chemistry of the compounds but also for applications such as the remote sensing of the earth and Mars.

Morris, R. V.↗
NASA NTRS1989

Making Submicron CoSi2 Structures On Silicon Substrates

Experimetnal fabrication process makes submicron-sized structures of single-crystal metallic CoSi2 on silicon substrates. Amorphous Co:Si(1:2) crystallized by electron beam becoming single-crystal CoSi2. Remaining amorphous Co:Si then preferentially etched away. When fully developed, process used to make fine wires or dots exhibiting quantum confinement of charge carriers.

Nieh, Simon K. W.↗
NASA NTRS1991

Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFET's) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 microns. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.

Biedenbender, M. D.↗
NASA NTRS1991

Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 micron. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.

Biedenbender, Michael D.↗
NASA NTRS1992

Atmospheric concentrations of submicron contact-freezing nuclei

Atmospheric concentrations of contact-freezing nuclei were measured using a technique primarily sensitive to submicron aerosol particles. Diffusion and phoretic forces were relied on for the capture of nuclei by supercooled drops of distilled water exposed to the sample air. Nucleus concentrations were deduced from the rate at which the drops were observed to freeze, interpreting that rate on the basis of a theoretical prediction of aerosol capture rate for different assumed sizes of the nuclei. Measurements at Laramie, Wyoming, yielded average concentrations of contact-freezing nuclei of 1.7/L at -15 C and 3.1/L at -18 C for an assumed radius of 0.01 micron for the nucleating particles.

Deshler, Terry↗
NASA NTRS2003

A Critical Examination of Relative Concentrations of Volume-correlated and Surface-correlated Submicron Globules of Pure Fe-0 in Lunar Soils

Impacts on lunar soils produce melt and vapor in an approximate proportion of 7:1. The melt scavenges soil grains of diverse size, quenches and forms agglutinates, thereby converting surface correlated components of soil grains as volume correlated components; simultaneously, parts of the vapor may condense or escape. Cumulative small impacts increase the maturity of the soils, increase the abundance of agglutinates, and increase the concentration of vapor condensated material. Since the discovery of vapor deposited crystalline Fe-0 in vugs of regolith breccias and the theoretical anticipation of amorphous vapor deposits of diverse composition coating lunar soils grains, empirical evidence is gathering in support of such deposits, now commonly called vapor deposited patina (VDP). In addition, submicron globules of Fe-0 are seen to be ubiquitous in VDP. The amorphous VDP lowers the albedo of lunar soils, affects magnetic properties of soils, changes the slopes of uv-vis-ir reflectance spectra, and potentially also alters the gamma and x-ray spectra of lunar soils, compromising compositional inferences from remote sensing.

Basu, A.↗
NASA NTRS1997

Design, Fabrication and Evaluation of Deep Submicron FETs

GaAs FET's with gatelengths on a nanometer scale have been designed, fabricated and evaluated in order to investigate the limits of conventional GaAs scaling rules. An optimum layer structure for deep submicron GaAs MESFET's was designed, and a fabrication process that minimizes the effects of extrinsic parasitics was developed. The fabricated FET's were measured and evaluated at DC and at RF frequencies. 0.1 micron and 50 nm gatelength GaAs MESFET's with 2x45 micron wide "T"-shaped gates were fabricated so that a wide range of saturation current was achieved. For the 0.1 micron gatelength FET's, peak g(sub m,ext) varies from 611 mS/mm to 795 mS/mm with an average value of 717 mS/mm, peak f(sub t) varies from 90 GHz to 103 GHz with an average value of 96 GHz, and peak f(sub max) varies from 147 GHz to 172 GHz with an average value of 161 GHz. In comparison, the peak g(sub m,ext) of the 50 nm gatelength FET's is reduced by almost 20%, the peak f(sub t) is increased by 30%, and the peak f(sub max) is about the same as for the 0.1 micron gatelength FET's. The f(sub t) of the 50 nm gatelength FET's is higher than the f(sub t) of the 0.1 micron gatelength FET's because of the reduced gate-source capacitance (C(sub gs)). The peak f(sub max) does not show a similar improvement because of the onset of short channel effects.

Abbott-Morse, Tracy↗
NASA NTRS1991

Aerosol reactor production of uniform submicron powders

A method of producing submicron nonagglomerated particles in a single stage reactor includes introducing a reactant or mixture of reactants at one end while varying the temperature along the reactor to initiate reactions at a low rate. As homogeneously small numbers of seed particles generated in the initial section of the reactor progress through the reactor, the reaction is gradually accelerated through programmed increases in temperature along the length of the reactor to promote particle growth by chemical vapor deposition while minimizing agglomerate formation by maintaining a sufficiently low number concentration of particles in the reactor such that coagulation is inhibited within the residence time of particles in the reactor. The maximum temperature and minimum residence time is defined by a combination of temperature and residence time that is necessary to bring the reaction to completion. In one embodiment, electronic grade silane and high purity nitrogen are introduced into the reactor and temperatures of approximately 770.degree. K. to 1550.degree. K. are employed. In another embodiment silane and ammonia are employed at temperatures from 750.degree. K. to 1800.degree. K.

Flagan, Richard C.↗
NASA NTRS2003

Artifacts for Calibration of Submicron Width Measurements

Artifacts that are fabricated with the help of molecular-beam epitaxy (MBE) are undergoing development for use as dimensional calibration standards with submicron widths. Such standards are needed for calibrating instruments (principally, scanning electron microscopes and scanning probe microscopes) for measuring the widths of features in advanced integrated circuits. Dimensional calibration standards fabricated by an older process that involves lithography and etching of trenches in (110) surfaces of single-crystal silicon are generally reproducible to within dimensional tolerances of about 15 nm. It is anticipated that when the artifacts of the present type are fully developed, their critical dimensions will be reproducible to within 1 nm. These artifacts are expected to find increasing use in the semiconductor-device and integrated- circuit industries as the width tolerances on semiconductor devices shrink to a few nanometers during the next few years. Unlike in the older process, one does not rely on lithography and etching to define the critical dimensions. Instead, one relies on the inherent smoothness and flatness of MBE layers deposited under controlled conditions and defines the critical dimensions as the thicknesses of such layers. An artifact of the present type is fabricated in two stages (see figure): In the first stage, a multilayer epitaxial wafer is grown on a very flat substrate. In the second stage, the wafer is cleaved to expose the layers, then the exposed layers are differentially etched (taking advantage of large differences between the etch rates of the different epitaxial layer materials). The resulting structure includes narrow and well-defined trenches and a shelf with thicknesses determined by the thicknesses of the epitaxial layers from which they were etched. Eventually, it should be possible to add a third fabrication stage in which durable, electronically inert artifacts could be replicated in diamondlike carbon from a master made by MBE and etching as described above.

Grunthaner, Frank↗
NASA NTRS1969

Technique for pinpointing submicron particles in the electron microprobe

Series of electron micrographs at successively lower magnifications can localize the substrate area sufficiently for a particle to be picked up by the beam of the electron microprobe. This approach could be modified to apply to fractographic studies, particularly of oxidation products stripped from fractures.

Miller, E. L.↗
NASA NTRS1971

Measurement of thermal radiation scattering characteristics of submicron refractory particles.

The differential scattering parameter has been measured for 0.04-micron tungsten particles in hydrogen and nitrogen at temperatures to 1080 K. The differential scattering parameter has also been measured for 0.1 micron tungsten, three types of carbon particles, and fly ash in nitrogen at temperatures to 1000 K. The 0.04 micron tungsten shows a temperature dependent total scattering parameter varying from around 4000 sq cm per g at room temperature to 7000 sq cm per g at 1088 K. The temperatures over which data were obtained are not high enough to confirm the temperature dependence of the total scattering parameter of tungsten.

Jacobs, W. R.↗