Internal conversion coefficients for M4 transition for tellurium
Internal conversion coefficients for M4 transition in tellurium
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Internal conversion coefficients for M4 transition in tellurium
Angular distributions of elastic and inelastic scattering of 42-MeV alpha particles measured for even tellurium isotopes
A new microwave-enhanced synthesis method for the production of tellurium nanostructures is reported here—with control over products from the 1D regime (sub-5 nm diameter nanowires), to nanoribbons, to the 2D tellurene regime—along with a new methodology for local statistical quantification of the crystallographic parameters of these materials at the nanometer scale. Using a direct electron detector and image-corrected microscope, large and robust 4D scanning transmission electron microscopy datasets for accurate structural analysis are obtained. These datasets allow the adaptation of quantitative techniques originally developed for X-ray diffraction (XRD) refinement analyses to transmission electron microscopy, enabling the first demonstration of sub-picometer accuracy lattice parameter extraction while also obtaining both the size of the coherent crystallite domains and the nanostrain, which is observed to decrease as nanowires transition to tellurene. This new local analysis is commensurate with global powder XRD results, indicating the robustness of both the new synthesis approach and new structural analysis methodology for future scalable production of 2D tellurene and characterization of nanomaterials.
For this work, the corrosion properties of Alloy 625 have been studied in molten FLiNaK salt for 48 h at 700 °C as a function of tellurium (Te) concentrations using immersion tests and electrochemical methods. Under specific Te concentrations, we found that Te-induced corrosion can be suppressed and help protect the alloy against corrosion. The sample after the immersion test containing 0.1 wt.% Te (0.1 wt.% Te sample) had the lowest corrosion depth and mass loss, coupled with the highest charge transfer resistance, obtained using electrochemical impedance spectroscopy (EIS). On the other hand, the alloy with Te content above 0.1 wt.% exhibited severe corrosion penetration and lower charge transfer resistance in FLiNaK. Based on thermodynamical and electrochemical analyses, a corrosion mechanism of Alloy 625 in the molten salt containing Te was theorized involving the formation of stable corrosion products such as Ni/Fe rich layer depleted in Cr, nickel telluride, and chromium oxide.
Compared to more abundant metalloids (e.g., As, Se, and Sb), little is known regarding the biogeochemistry of tellurium (Te), a critical metal whose use in CdTe photovoltaic solar cells is driving increasing global demand for this element. In this study, to understand the redox behavior of Te under ferrugenic/sulfidogenic conditions, we examined the potential for reduction of Te(VI) and Te(IV) in aqueous suspensions containing Fe(II) as siderite, vivianite, green rust, magnetite, or mackinawite; Fe(II)-bearing minerals which are often formed during microbial reduction of Fe(III) oxides. In the mackinawite systems, complete reduction of Te(VI) or Te(IV) to Te(0) was observed within 12 h, and near complete reduction (>90% Te(0)) was observed within 2.5 days in the green rust systems. In the presence of siderite, complete reduction of Te(VI) or Te(IV) to Te(0) occurred within 60 days. We observed >60% reduction of Te(VI) to Te(IV) within 2.5 days in the magnetite system, but Te(0) did not form until 120 days; however, complete reduction to Te(0) was observed within 120 days when starting with Te(IV). With vivianite there was >80% reduction of Te(VI) to Te(IV) within 12 h, without further reduction to Te(0) over the duration of the experiment (120 days); in the Te(IV)-vivianite system, there was no evidence of Te(IV) reduction within 120 days. The reduction of Te(VI) and Te(IV) in soils and sediments has been largely attributed to direct reduction by microbes; however, the reduction of Te(VI) and Te(IV) by Fe(II)-bearing minerals suggests that abiotic or coupled biotic-abiotic processes may also play a critical role in Te redox chemistry in natural and engineered environments.
Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, resulting in complex band structures with Weyl crossings and unique spin textures. Detailed time-resolved polarized reflectance spectroscopy is used to investigate its band structure and carrier dynamics. The polarized transient spectra reveal optical transitions between the uppermost spin-split H4 and H5 and the degenerate H6 valence bands (VB) and the lowest degenerate H6 conduction band (CB) as well as a higher energy transition at the Lpoint. Surprisingly, the degeneracy of the H6 CB (a proposed Weyl node) is lifted and the spin-split VB gap is reduced upon photoexcitation before relaxing to equilibrium as the carriers decay. Using ab initio density functional theory (DFT) calculations, we conclude that the dynamic band structure is caused by a photoinduced shear strain in the Te film that breaks the screw symmetry of the crystal. The band-edge anisotropy is also reflected in the hot carrier decay rate, which is a factor of two slower along the c-axis than perpendicular to it. The majority of photoexcited carriers near the band-edge are seen to recombine within 30 ps while higher lying transitions observed near 1.2 eV appear to have substantially longer lifetimes, potentially due to contributions of intervalley processes in the recombination rate. These new findings shed light on the strong correlation between photoinduced carriers and electronic structure in anisotropic crystals, which opens a potential pathway for designing novel Te-based devices that take advantage of the topological structures as well as strong spin-related properties.
Abstract A fundamental understanding of the transition metal dichalcogenide (TMDC)–metal interface is critical for their utilization in a broad range of applications. We investigate how the deposition of palladium (Pd), as a model metal, on WTe2(001), leads to the assembly of Pd into clusters and nanoparticles. Using X-ray photoemission spectroscopy, scanning tunneling microscopy imaging, and ab initio simulations, we find that Pd nucleation is driven by the interaction with and the availability of mobile excess tellurium (Te) leading to the formation of Pd-Te clusters at room temperature. Surprisingly, the nucleation of Pd-Te clusters is not affected by intrinsic surface defects, even at elevated temperatures. Upon annealing, the Pd-Te nanoclusters adopt an identical nanostructure and are stable up to ∼523 K. Density functional theory calculations provide a foundation for our understanding of the mobility of Pd and Te atoms, preferential nucleation of Pd-Te clusters, and the origin of their annealing-induced monodispersity. These results highlight the role the excess chalcogenide atoms may play in the metal deposition process. More broadly, the discoveries of synthetic pathways yielding thermally robust monodispersed nanostructures on TMDCs are critical to the manufacturing of novel quantum and microelectronics devices and catalytically active nano-alloy centers.
The narrow band-gap semiconductor elemental tellurium (Te) has a unique electronic structure due to strong spin-orbit splitting and a lack of inversion symmetry of its helical lattice. Using broadband extreme ultraviolet core-level transient absorption, we simultaneously measure the coherently coupled photoinduced carrier and lattice dynamics at the Te N4,5 edge initiated by a few-cycle NIR pulse. Ultrafast excitation of carriers leads to a coherently excited A1 phonon oscillation and the generation of a hot carrier population distribution that oscillates in temperature, and the phonon excursion and hot carrier temperature are π out of phase with respect to each other. The depths of modulation suggest a significant coupling between the electronic and lattice degrees of freedom in Te. A long-lived shift of the absorption edge suggests an excited state of Te in another equilibrium potential energy surface that lives on the order of the carrier recombination timescale. The observed phonon-induced oscillations of the hot carriers are supportive of a change in the metallicity, whereby Te becomes more metallic with increasing phonon-induced displacement. Additionally, near the Fermi level we observe an energy-dependent phase of the displacive excitation of the A1 phonon mode. The discovery of coherent coupling between the lattice and hot carriers in Te provides the basis to investigate coherent interactions between spin and orbital degrees of freedom. The results spectrally and temporally resolve the correlation between photoexcited hot carriers and coherent lattice excitations, providing insight on the optical manipulation of the Te electronic structure at high carrier densities exceeding 1021cm−3.
Gamma-ray production cross-section data have been obtained for the inelastic neutron scattering reactions 126,128,130 Te(n,n'γ) at five neutron energies between 3.6 and 10 MeV. We report data for the γ-ray energy region relevant to 0ν ββ decay of 130 Te with a Q ββ value of 2527.515 keV, assuming natural-abundance tellurium, as used at CUORE and SNO+. The natural abundance of 130 Te, 128 Te, and 126 Te is 34%, 32%, and 19%, respectively. For CUORE the γ-ray cascades from the excited state in 130 Te at 2527.06 keV and in 126 Te at 2533.85 keV are of concern. For SNO+, accounting for its inferior energy resolution, an additional four levels are important in 130 Te, an additional nine levels in 128 Te, and an additional eight levels in 126 Te. Of these, we report neutron-induced γ-ray production cross sections for the strongest transitions: the 2581.15 keV level in 130 Te, the 2494.20, 2508.06, and 2630.14 keV levels in 128 Te, and the 2496.83 and 2585.46 keV level in 126 Te. Here, the largest cross-section values were found for cascade γ-ray transitions to the ground state, while direct transitions to the ground state are very weak and were not observed in the present work. Both the CUORE and SNO+ detectors, however, may not be able to distinguish between cascade transitions and direct transitions to the ground state, making the neutron-induced excitation of the 2527.06 keV state of 130 Te in particular a potential problem for 0νββ decay searches of 130Te, because it matches its Q ββ value.
Trigonal tellurium, a small-gap semiconductor with pronounced magneto-electric and magneto-optical responses, is among the simplest realizations of a chiral crystal. We have studied by spin- and angle-resolved photoelectron spectroscopy its unconventional electronic structure and unique spin texture. We identify Kramers-Weyl, composite, and accordionlike Weyl fermions, so far only predicted by theory, and show that the spin polarization is parallel to the wave vector along the lines in k space connecting high-symmetry points. Our results clarify the symmetries that enforce such spin texture in a chiral crystal, thus bringing new insight in the formation of a spin vectorial field more complex than the previously proposed hedgehog configuration. Our findings thus pave the way to a classification scheme for these exotic spin textures and their search in chiral crystals.
Despite persistent and extensive observations of crystals with chiral shapes, the mechanisms underlying their formation are not well understood. Although past studies suggest that chiral shapes can form because of crystallization in the presence of chiral additives, or because of an intrinsic tendency that stems from the crystal structure, there are many cases in which these explanations are not suitable or have not been tested. Here, an investigation of model tellurium nanocrystals provides insights into the chain of chirality transfer between crystal structure and shape. We show that this transfer is mediated by screw dislocations, and shape chirality is not an outcome of the chiral crystal structure or ligands.
Many attractive photonics platforms still lack integrated photodetectors due to inherent material incompatibilities and lack of process scalability, preventing their widespread deployment. Here, we address the problem of scalably integrating photodetectors in a photonics-platform-independent manner. Using a thermal evaporation and deposition technique developed for nanoelectronics, we show that tellurium, a quasi-2D semi-conductive element, can be evaporated at low temperatures directly onto photonic chips to form air-stable, high-speed, ultrawide-band photodetectors. We demonstrate detection from visible (520 nm) to short-wave infrared (2.4 µm), a bandwidth of more than 40 GHz, and platform-independent scalable integration with photonic structures in silicon, silicon nitride, and lithium niobate.
The recent realization of 2D tellurium (tellurene) has allowed scientists to demonstrate an air-stable monoelemental van der Waals material with remarkable potential for applications in electronics and optoelectronics. The chiral-chain structure of ultrathin Te allows controllable electronic and optical properties due to the non-monotonic carrier mobility and an increase in electronic band-gap as the thickness is reduced. Scalable and accurate production of 2D Te-based functional devices will require detailed knowledge of structural defects and strain field distributions that can be linked to transport properties.
Bismuth trioxide-tellurium dioxide glasses have improved infrared transmission characteristics.
Electrical and optical properties of glasses in bismuth trioxide-tellurium dioxide system
Phase diagrams in silver-lead-tellurium systems investigated by electrical measurements for thermoelectric properties
Electron beam pumped laser action in selenium and tellurium with applications for tunable backward parametric oscillations
Absorption coefficient, refractive indices, and nonlinear susceptibility in selenium and tellurium crystals