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Results for “thermal annealing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

ac susceptibility of thermally annealed and neutron irradiated Cu-Ni alloys

Thermal annealing and high-flux neutron irradiation are used to vary the degree of short-range atomic order in Cu-Ni alloys of composition 40, 50, and 60 at. pct Ni. The magnetic state is measured by ac magnetic susceptibility measurements. It is shown that annealing at 350 C causes significant changes in the susceptibility of all the samples. In the 50 and 60 at. pct Ni samples, the transition is broadened and extended to higher temperatures, while the 40 at. pct Ni sample changes from a paramagnetic system to a weakly ferromagnetic system. The neutron irradiation, in contrast to the thermal treatment, causes the development of smaller size cluster formations. The irradiated 60 at. pct Ni sample exhibits no change in the shape of its susceptibility curve from that of the quenched sample, whereas, the 40 pct alloy is changed, by irradiation, from a paramagnetic system to a spin-glass system.

Catchings, R. M., III↗
NASA NTRS1987

Rapid thermal annealing of indium phosphide compound semiconductors

The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.

Biedenbender, Michael D.↗
DOE OSTI2020

Disordering of helium gas bubble superlattices in molybdenum under ion irradiation and thermal annealing

Self-organization of gas bubbles causes the formation of an ordered array of nanoscale gas bubbles (a gas bubble superlattice), a highly efficient mechanism for gas storage under irradiation. Here, the stability of helium (He) gas bubble superlattices in molybdenum (Mo) under krypton (Kr) ion irradiation and thermal annealing has been investigated. The He gas bubble superlattices gradually become disordered under Kr ion irradiation at 300° C, and the order-disorder transformation process completes at 2.5 dpa. Both transmission electron microscopy (TEM) and synchrotron-based small-angle X-ray scattering (SAXS) reveal that the order-disorder transformation of He gas bubble superlattices is associated with a slight increase in the average bubble size. Phase-field modeling indicates that the inhomogeneous growth and coarsening of bubbles/voids cause the disordering of imperfect superlattices under irradiation and implies that highly ordered superlattices could potentially exhibit much stronger resistance to irradiation damage. Under thermal annealing, the He gas bubble superlattices in Mo become unstable and disordered at 1000° C with the bubble size increasing from ~1.1 to ~1.6 nm. The finding in this research provides insights into the disordering mechanisms of defect superlattices as well as guidance for designing stable defect superlattices in harsh environments.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing

Quantum light sources play a fundamental role in quantum technologies ranging from quantum networking to quantum sensing and computation. The development of these technologies requires scalable platforms, and the recent discovery of quantum light sources in silicon represents an exciting and promising prospect for scalability. The usual process for creating color centers in silicon involves carbon implantation into silicon, followed by rapid thermal annealing. However, the dependence of critical optical properties, such as the inhomogeneous broadening, the density, and the signal-to-background ratio, on centers implantation steps is poorly understood. We investigate the role of rapid thermal annealing on the dynamic of the formation of single color centers in silicon. We find that the density and the inhomogeneous broadening greatly depend on the annealing time. We attribute the observations to nanoscale thermal processes occurring around single centers and leading to local strain fluctuations. Our experimental observation is supported by theoretical modeling based on first principles calculations. The results indicate that annealing is currently the main step limiting the scalable manufacturing of color centers in silicon.

42 ENGINEERING↗
NASA NTRS1981

Activation energies of thermal annealing of radiation-induced damage in n- and p-channels of CMOS integrated circuits. II

The procedures described by Danchenko et al. (1980) are applied to devices of RCA's Z-process (100,000 rad-hard). A thermal annealing investigation of the Z-process reveals an annealing behavior of the p-channels that is anomalous when compared with the p-channels of the commercial and J-processes. It is noted that the thermal annealing-induced shift of the threshold potential extends far below the original value; this necessitated the development of a new mathematical treatment, the treatment presented in the paper.

Danchenko, V.↗
DOE OSTI2021

Fabrication of Flexible Perovskite Solar Cells via Rapid Thermal Annealing

Adaptability, lightweight, and low cost of materials make flexible perovskite solar cells essential for the perovskite technology to breach commercial photovoltaic market. Roll-to-roll manufacturing has great potential for high-throughput perovskite manufacturing; however, conventional annealing methods are not capable of producing flexible perovskite solar cells at scale. Rapid thermal annealing (RTA), a radiative method, is utilized on roll-to-roll lines within many different industries and has shown promising potential for perovskite annealing. Here, we introduce a blade-coated perovskite thin film on flexible ITO-coated PET annealed via RTA that reduces post-deposition processing time from ~150 seconds to ~14 seconds. Performance was not sacrificed for scalability as a perovskite solar cell was produced with a power conversion efficiency (PCE) of 14.58%.

Martin, Blake↗
DOE OSTI2020

Analysis and Evaluation of Thermally Annealed Pyrolytic Graphite Heat Spreader for Power Modules

Next generation power modules demand increased heat extraction capability along with reduced weight and volume. In this paper, thermally annealed pyrolytic graphite (TPG) is analyzed and compared with conventional materials used in power modules for thermal management. Fundamental properties of TPG are explained and compared with commonly used materials in power module heat spreaders and substrates. The encapsulated TPG based heat spreader is manufactured and compared with bulk copper in simulation and experimental based analysis. The results show that encapsulated TPG based heat spreader achieves more than 50% reduction in thermal resistance along with 48% reduction in weight in the heat spreader layer.

Gurpinar, Emre↗
NASA NTRS1987

Raman scattering from rapid thermally annealed tungsten silicide

Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.

Kumar, Sandeep↗
DOE OSTI2020

High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing

We fabricate suspended single-mode optical waveguides and ring resonators in 3C silicon carbide (SiC) that operate at telecommunication wavelength, and leverage post-fabrication thermal annealing to minimize optical propagation losses. Annealed optical resonators yield quality factors of over 41,000, which corresponds to a propagation loss of 7 dB/cm, and is a significant improvement over the 24 dB/cm in the case of the non-annealed chip. This improvement is attributed to the enhancement of SiC crystallinity and a significant reduction of waveguide surface roughness, from 2.4 nm to below 1.7 nm. The latter is attributed to surface layer oxide growth during the annealing step. We confirm that the thermo-optic coefficient, an important parameter governing high-power and temperature-dependent performance of SiC, does not vary with annealing and is comparable to that of bulk SiC. Our annealing-based approach, which is especially suitable for suspended structures, offers a straightforward way to realize high-performance 3C-SiC integrated circuits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

In this work, the evolution of structural, optical and optoelectronic properties of coherently strained Ge 0.883 Sn 0.117 /Ge multiple quantum wells (MQWs) grown by molecular beam epitaxy under rapid thermal annealing (RTA) is systematically investigated. The MQW structure remains fully-strained state with RTA at 400 °C or below and disrupts at higher annealing temperatures due to Sn segregation and interdiffusion of Ge and Sn atoms. The GeSn well layers exhibit the strongest absorption in 2.0–2.4 μm after annealing at 400 °C and become transparent above 1.8 μm after RTA at 600 °C or beyond due to serve Sn segregation. Owing to improved crystal quality after RTA at 400 °C, the dark current of the fabricated metal-semiconductor-metal photodetector is effectively lowered by more than two times. Additionally, the responsivities at 1.55 and 2.0 μm are improved by 4.15 and 3.78 folds, respectively, compared to those of the as-grown sample. Here, the results can be an insightful guidance for the development of high-performance short-wave infrared photonic devices based on Sn-containing group-IV low-dimensional structures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Strengthening of nanocrystalline Al using grain boundary solute additions: Effects of thermal annealing and ion irradiation

Strengthening of nanocrystalline Al by grain boundary solute additions was investigated for a series of dilute aluminum alloys, Al-Sc, Al-Sb, Al-Cr, and Al-W with grain sizes in the range of 50–200 nm. Thermal annealing of the alloys at low temperatures led to alloy softening, but with negligible change in the grain size. The re- duction in strength can be attributed to the loss of solute in the grain boundaries arising from grain boundary diffusion and precipitation. Annealing at higher temperatures led to grain growth, but with little additional loss of strength, a result of precipitation hardening. The Al-Sc and Al-Sb alloys were additionally subjected to ion irradiation at various temperatures. Furthermore, these studies revealed that annealed samples regained their hardness due to solute redistribution by ion beam mixing. Alloy strength was independent of grain size between 50 and 150 nms. Irradiation-induced segregation of Sb to grain boundaries in Al-Sb further enhanced strengthening.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealing

Here, this Letter reports the growth, fabrication, and characterization of molecular beam epitaxy (MBE)-grown quaternary InAlGaAs/GaAs quantum dot (QD) lasers emitting at sub-900 nm. The presence of Al in QD-based active regions acts as the origin of defects and non-radiative recombination centers. Applying optimized thermal annealing annihilates the defects in p-i-n diodes, thus lowering the reverse leakage current by six orders of magnitude compared to as-grown devices. A systematic improvement in the optical properties of the devices is also observed in the laser devices with increasing annealing time. At an annealing temperature of 700°C for 180 s, Fabry–Pérot lasers exhibit a lower pulsed threshold current density at infinite length of 570 A/cm 2 .

42 ENGINEERING↗
NASA NTRS1982

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Danchenko, V.↗
NASA NTRS1980

Effects of thermal annealing on the deep-level defects and I-V characteristics of 200 keV proton irradiated AlGaAs-GaAs solar cells

Detailed characterization of deep-level defects and analysis of dark I-V data in 200 keV proton irradiated AlGaAs-GaAs solar cells have been carried out for several proton fluences (5 x 10 to the 11th, 10 to the 12th, and 10 to the 13th P/sq cm), using DLTS, C-V, and I-V measurement techniques. To study the effect of low temperature thermal annealing on the deep-level defect properties, these irradiated samples were annealed in vacuum at 300 C for one hour. Comparison was then made on the measured defect parameters (i.e., defect energy levels and densities) and the dark I-V characteristics for both the annealed and unannealed samples.

Li, S. S.↗