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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Electronic Melting of Silicon in Nanostructures using X-ray Forbidden Bragg Reflections

Abstract We carried out a short beamtime at the Pohang Accelerator Laboratory x-ray Free Electron Laser to perform a pump-probe (PP) laser excitation diffraction experiment on the silicon (222) forbidden Bragg peak. To limit the x-ray penetration, we used a “device layer” silicon film wafer bonded to a silicon substrate. The sample, specially fabricated by MEMC Electronic Materials, had a Si(100) substrate bonded to a 170 nm Si(100) film rotated at 45° for crystallographic isolation. A second sample was reactive-ion-etched down to 52 nm thickness. In the silicon lattice, the covalent bonds are seen exclusively at the 222 reflection. Upon laser excitation, these electrons are expected to be excited to the valence band on femtosecond electronic time scales. The Si(222) reflection is therefore expected to be extinguished on this fast time scale, while the electron–phonon coupled acoustic response is determined by the lattice dynamics. The latter is determined by the speed of sound over the device thickness, which is in the mid-picosecond range.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Three-Dimensional Integration of Functional Oxides and Crystalline Silicon for Optical Neuromorphic Computing Using Nanometer-Scale Oxygen Scavenging Barriers

Dating to the first reports of epitaxial oxide deposition on Si(001), the integration of complex oxides on silicon has been a fast-moving area of research, where fundamental materials physics is intimately connected to tremendous technological promise in such areas as integrated electronics, optical neuromorphic and quantum computing, and sensing, to name a few. Despite their great promise, devices relying on the co-integration of silicon and epitaxial perovskites are typically limited to basic, planar geometries due to practical issues with their fabrication. In this paper, we overcome these long-standing challenges by developing a method to produce high-quality Si(001)/TMO/Si(001)/TMO heterostructures without wafer bonding, resulting in the straightforward three-dimensional integration of functional complex oxides and active Si(001) layers into a technologically relevant platform that is needed for on-chip hardware implementations of neuromorphic computing based on optical signals. We present detailed structural and chemical characterization of our heterostructures and discuss generalized design rules for their fabrication. Our results exponentially expand the universe of practically achievable TMO-based integrated devices and push this promising class of materials closer to realizing their full technological potential.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Superconducting qubits in a flip-chip architecture

Flip-chip architectures have recently enabled significant scaling-up of multi-qubit circuits and have been used to assemble hybrid quantum systems that combine different substrates, for example, for quantum acoustics experiments. The standard flip-chip method uses superconducting galvanic connections between two substrates, typically implemented using sophisticated indium wafer-bonding systems, which give highly reliable and temperature-cyclable assemblies, but are expensive, somewhat inflexible in design, and require robust substrates that can sustain the large compressive forces required to cold-weld the indium bonds. A much simpler method is to assemble dies using very low-force contacts and air-dried adhesives, although this does not provide a galvanic contact between the dies. In this work, we demonstrate that the latter technique can be used to reliably couple superconducting qubit circuits, in which the qubits are on separate dies, without the need for a galvanic connection. We demonstrate full vector qubit control of each qubit on each of the two dies, with high-fidelity single-shot readout, and further demonstrate entanglement-generating excitation swaps as well as benchmark a controlled-Z entangling gate between the two qubits on the two dies. This exemplifies a simple and inexpensive assembly method for two-plus-one-dimensional quantum circuit integration that supports the use of delicate or unusually shaped substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Novel fabrication technique for high-resolution spherical crystal analyzers using a microporous aluminium base

Modern inelastic X-ray spectrometers employ curved, bent and diced analyzers to capture sufficiently large solid angles of radially emitted scattered radiation emanating from the sample. Fabricating these intricate analyzers, especially when a high energy resolution of a few millielectronvolts is required, is very time-consuming, expensive and often a hit-or-miss affair. A novel fabrication technique is introduced, utilizing a concave-spherical, microporous aluminium base to hold an assembly of a thin glass substrate with a diced crystal wafer bonded to it. Under uniform vacuum forces, the glass substrate is drawn into the aluminium base, achieving the desired bending radius, while dicing of the diffracting crystal layer prevents bending strain from being imposed on the individual crystal pixels. This technique eliminates the need for permanently bonding the crystal assembly to the concave lens, offering the opportunity for correcting figure errors, avoiding long-term degradation of the permanent bond, and making both lens and crystal reusable. Process and material costs are thus substantially decreased. Two analyzers, Si(844) and Ge(337) with intrinsic resolutions of 14.6 meV and 36.5 meV, respectively, were produced in this fashion and characterized in resonant inelastic X-ray scattering (RIXS) measurements. The achieved overall energy resolutions for both analyzers were 29.4 meV for Si(844) and 56.6 meV for Ge(337). Although the RIXS technique is veru sensitive to analyzer imperfections, the analyzers were found to be equal, if not superior, in quality to their traditional, permanently bonded counterparts.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Fabrication of Freestanding Metallic Ni-Mo-W Microcantilever Beams With High Dimensional Stability

Recent studies have elucidated a promising balance of physical and mechanical properties of sputter deposited nickel-molybdenum-tungsten (Ni-Mo-W) films that have a unique nanotwinned microstructure and promising potential for use in high temperature microelectromechanical systems (MEMS). Here, the current study was undertaken to establish the feasibility of making nanotwinned Ni-Mo-W microcantilevers with standard micro- fabrication processing, to assess their dimensional stability, and to demonstrate the possibility of using nanotwinned Ni-Mo-W in metal MEMS devices. Deposition of Ni-Mo-W films in commercial sputtering chambers revealed a wide processing window for the formation of the requisite nanotwinned microstructure. Conventional photolithography and etchants were employed to shape blanket Ni-Mo-W films into freestanding microcantilever beams. Monitoring microcantilever deflections via interferometry provided a direct measure of residual stresses and overall dimensional stability. Heat treatments of 200° C and 400° C were used to mimic wafer bonding temperatures. At 400°C, microcantilevers exhibited modest stress relaxation, yielding beam deflection profiles on the nanometer scale and portending dimensional stability and control for future metal MEMS devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links

We discuss the design and demonstration of various III–V/Si asymmetric Mach–Zehnder interferometer (AMZI) and ring-assisted AMZI (de-)interleavers operating at O-band wavelengths with 65 GHz channel spacing. The wafer-bonded III–V/Si metal-oxide-semiconductor capacitor (MOSCAP) structure facilitates ultra-low-power phase tuning on a heterogeneous platform that allows for complete monolithic transceiver photonic integration. The second- and third-order MOSCAP AMZI (de-)interleavers exhibit cross-talk (XT) levels down to − 22 dB and − 32 dB with tuning powers of 83.0 nW and 53.0 nW, respectively. The one-, two-, and three-ring-assisted MOSCAP AMZI (de-)interleavers have XT levels down to − 27 dB, − 22 dB, and − 20 dB for tuning powers of 10.0 nW, 7220.0 nW, and 33.6 nW, respectively. The leakage current density is measured to be in the range of 1.6 – 27 μA / cm 2 . To the best of our knowledge, we have demonstrated for the first time, athermal III–V/Si MOSCAP (de-)interleavers with the lowest XT and reconfiguration power consumption on a silicon platform.

Cheung, Stanley (ORCID:0000000248860013)↗
DOE OSTI2024

Radiation Hardened Engineered Substrates for Time and Space Resolution

Low Gain Avalanche Diodes (LGADs) have become sensors of choice for fast timing of minimum ionizing particles. The current generation of these devices suffer from only moderate radiation hardness, low fill factor, and limited design options. Cactus Materials Inc. proposes to develop sensors with gain layer implants buried beneath the surface which will, with AC coupling developed by Brookhaven National Laboratory (BNL) and University of California Santa Cruz (UC Santa Cruz) solve these problems. Fermilab has a major role in the CMS timing upgrade using the current generation of LGADs and development of AC-coupled, buried layer LGADs will solve some of the central problems inherent in this technology. Annex B included a two-year work plan, deliverables, schedule and funding for the project’s SBIR Phase II award to develop and test prototype LGADs utilizing wafer bonding technology and epitaxial growth, that will allow for fabrication of radiation hard AC coupled devices with 100% fill factor and adjustable operating point.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1991

Advanced silicon on insulator technology

Undoped, thin-layer silicon-on-insulator was fabricated using wafer bonding and selective etching techniques employing a molecular beam epitaxy (MBE) grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200-350 nm silicon layers over silicon dioxide are routinely fabricated using this procedure. A new selective silicon-germanium etch was developed that significantly improves the ease of fabrication of the bond and etch back silicon insulator (BESOI) material.

Godbey, D.↗
NASA NTRS2004

Progress of Multicolor Single Detector to Detector Array Development for Remote Sensing

Knowledge of the spatial and temporal distribution of atmospheric species such as CO2, O3, H2O, and CH4 is important for understanding the chemistry and physical cycles involving Earth s atmosphere. Although several remote sensing techniques are suitable for such measurements they are considered high cost techniques involving complicated instrumentation. Therefore, simultaneous measurement of atmospheric species using a single remote sensing instrument is significant for minimizing cost, size and complexity. While maintaining the instrument sensitivity and range, quality of multicolor detector, in terms of high quantum efficiency and low noise are vital for these missions. As the first step for developing multicolor focal plan array, the structure of a single element multicolor detector is presented in this paper. The detector consists of three p-n junction layers of Si, GaSb and InAs wafer bonded to cover the spectral range UV to 900 nm, 800 nm to 1.7 m, and 1.5 m to 3.4 m, respectively. Modeling of the absorption coefficient for each material was carried out for optimizing the layers thicknesses for maximum absorption. The resulted quantum efficiency of each layer has been determined except InAs layer. The optical and electrical characterization of each layer structure is reported including dark current and spectral response measurements of Si pin structure and of GaSb and InAs p-n junctions. The effect of the material processing is discussed.

Abedin, M. Nurul↗
NASA NTRS2001

MEMS Device Being Developed for Active Cooling and Temperature Control

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

Moran, Matthew E.↗
NASA NTRS2005

Operation of Terahertz Quantum-cascade Lasers at 164 K in Pulsed Mode and at 117 K in Continuous-wave Mode

We report the demonstration of a terahertz quantum-cascade laser that operates up to 164 K in pulsed mode and 117 K in continuous-wave mod e at approximately 3.0 THz. The active region was based on a resonant -phonon depopulation scheme and a metal-metal waveguide was used for modal confinement. Copper to copper thermocompression wafer bonding w as used to fabricate the waveguide, which displayed improved thermal properties compared to a previous indium-gold bonding method.

Williams, Benjamin S.↗
NASA NTRS2011

Ridge Waveguide Structures in Magnesium-Doped Lithium Niobate

This work proposes to establish the feasibility of fabricating isolated ridge waveguides in 5% MgO:LN. Ridge waveguides in MgO:LN will significantly improve power handling and conversion efficiency, increase photonic component integration, and be well suited to spacebased applications. The key innovation in this effort is to combine recently available large, high-photorefractive-damage-threshold, z-cut 5% MgO:LN with novel ridge fabrication techniques to achieve high-optical power, low-cost, high-volume manufacturing of frequency conversion structures. The proposed ridge waveguide structure should maintain the characteristics of the periodically poled bulk substrate, allowing for the efficient frequency conversion typical of waveguides and the high optical damage threshold and long lifetimes typical of the 5% doped bulk substrate. The low cost and large area of 5% MgO:LN wafers, and the improved performance of the proposed ridge waveguide structure, will enhance existing measurement capabilities as well as reduce the resources required to achieve high-performance specifications. The purpose of the ridge waveguides in MgO:LN is to provide platform technology that will improve optical power handling and conversion efficiency compared to existing waveguide technology. The proposed ridge waveguide is produced using standard microfabrication techniques. The approach is enabled by recent advances in inductively coupled plasma etchers and chemical mechanical planarization techniques. In conjunction with wafer bonding, this fabrication methodology can be used to create arbitrarily shaped waveguides allowing complex optical circuits to be engineered in nonlinear optical materials such as magnesium doped lithium niobate. Researchers here have identified NLO (nonlinear optical) ridge waveguide structures as having suitable value to be the leading frequency conversion structures. Its value is based on having the low-cost fabrication necessary to satisfy the challenging pricing requirements as well as achieve the power handling and other specifications in a suitably compact package.

Himmer, Phillip↗
NASA NTRS2015

Overview of the Design, Fabrication and Performance Requirements of Micro-Spec, an Integrated Submillimeter Spectrometer

Micro-Spec is a compact submillimeter (350-700 GHz) spectrometer which uses low loss superconducting niobium microstrip transmission lines and a single-crystal silicon dielectric to integrate all of the components of a grating-analog spectrometer onto a single chip. Here we present details of the fabrication and design of a prototype Micro-Spec spectrometer with resolution, R64, where we use a high-yield single-flip wafer bonding process to realize instrument components on a 0.45 m single-crystal silicon dielectric. We discuss some of the electromagnetic design concerns (such as loss, stray-light, cross-talk, and fabrication tolerances) for each of the spectrometer components and their integration into the instrument as a whole. These components include a slot antenna with a silicon lens for optical coupling, a phase delay transmission line network, parallel plate waveguide interference region, and aluminum microstrip transmission line kinetic inductance detectors with extremely low cross-talk and immunity to stray light. We have demonstrated this prototype spectrometer with design resolution of R64. Given the optical performance of this prototype, we will also discuss the extension of this design to higher resolutions suitable for balloon-flight.

spectrometer↗
NASA NTRSDate not supplied

Developing a New Generation of Integrated Micro-Spec Far Infrared Spectrometers for the EXperiment for Cryogenic Large-Aperture Intensity Mapping (EXCLAIM)

The current state of far-infrared astronomy drives the need to develop compact, sensitive spectrometers for future space and ground-based instruments. Here we present details of the µ-Spec spectrometers currently in development for the far-infrared balloon mission EXCLAIM. The spectrometers are designed to cover the 555 – 714 µm range with a resolution of R = λ/∆λ = 512 at the 638 µm band center. The spectrometer design incorporates a Rowland grating spectrometer implemented in a parallel plate waveguide on a low-loss single-crystal Si chip, employing Nb microstrip planar transmission lines and thin-film Al kinetic inductance detectors (KIDs). The EXCLAIM µ-Spec design is an advancement upon a successful R = 64 µ-Spec prototype, and can be considered a sub-mm superconducting photonic integrated circuit (PIC) that combines spectral dispersion and detection. The design operates in a single M=2 grating order, allowing one spectrometer to cover the full EXCLAIM band without requiring a multi-order focal plane. The EXCLAIM instrument will fly six spectrometers, which are fabricated on a single 150 mm diameter Si wafer. Fabrication involves a flip-wafer-bonding process with patterning of the superconducting layers on both sides of the Si dielectric. The spectrometers are designed to operate at 100 mK, and will include 355 Al KID detectors targeting a goal of NEP ∼8 × 10−19 W/√( Hz). We summarize the design, fabrication, and ongoing development of these µ-Spec spectrometers for EXCLAIM.

Carolyn G. Volpert↗
DOE OSTI2020

Mid-infrared vertical cavity laser

Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodic gain active region with type I quantum wells comprised of InGaAsSb, and barrier/cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases.

42 ENGINEERING↗
DOE OSTI2022

Mid-infrared vertical cavity laser

Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodic gain active region with type I quantum wells comprised of InGaAsSb, and barrier/cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases.

Jayaraman, Vijaysekhar↗
DOE OSTI2023

Electrically pumped vertical cavity laser

Disclosed is an electrically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses an interband cascade gain region, two distributed mirrors, and a low-loss refractive index waveguide. A preferred embodiment includes at least one wafer bonded GaAs-based mirror.

Jayaraman, Vijaysekhar↗