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All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Carbon Nanotube Microarrays Grown on Nanoflake Substrates

This innovation consists of a new composition of matter where single-walled carbon nanotubes (SWNTs) are grown in aligned arrays from nanostructured flakes that are coated in Fe catalyst. This method of growth of aligned SWNTs, which can yield well over 400 percent SWNT mass per unit substrate mass, exceeds current yields for entangled SWNT growth. In addition, processing can be performed with minimal wet etching treatments, leaving aligned SWNTs with superior properties over those that exist in entangled mats. The alignment of the nanotubes is similar to that achieved in vertically aligned nanotubes, which are called "carpets. " Because these flakes are grown in a state where they are airborne in a reactor, these flakes, after growing SWNTs, are termed "flying carpets. " These flakes are created in a roll-to-roll evaporator system, where three subsequent evaporations are performed on a 100-ft (approx. =30-m) roll of Mylar. The first layer is composed of a water-soluble "release layer, " which can be a material such as NaCl. After depositing NaCl, the second layer involves 40 nm of supporting layer material . either Al2O3 or MgO. The thickness of the layer can be tuned to synthesize flakes that are larger or smaller than those obtained with a 40-nm deposition. Finally, the third layer consists of a thin Fe catalyst layer with a thickness of 0.5 nm. The thickness of this layer ultimately determines the diameter of SWNT growth, and a layer that is too thick will result in the growth of multiwalled carbon nanotubes instead of single-wall nanotubes. However, between a thickness of 0.5 nm to 1 nm, single-walled carbon nanotubes are known to be the primary constituent. After this three-layer deposition process, the Mylar is rolled through a bath of water, which allows catalyst-coated flakes to detach from the Mylar. The flakes are then collected and dried. The method described here for making such flakes is analogous to that which is used to make birefringent ink that is coated on U.S. currency. After deposition, the growth is carried out in a hot-filament chemical vapor deposition apparatus. A tungsten hot filament placed in the flow of H2 at a temperature greater than 1,600 C creates atomic hydrogen, which serves to reduce the Fe catalyst into a metallic state. The catalyst can now precipitate SWNTs in the presence of growth gases. The gases used for the experiments reported are C2H2, H2O, and H2, at rates of 2, 2, and 400 standard cubic centimeters per minute (sccm), respectively. In order to retain the flakes, a cage is constructed by spot welding stainless steel or copper mesh to form an enclosed area, in which the flakes are placed prior to growth. This allows growth gases and atomic hydrogen to reach the flakes, but does not allow the flakes, which rapidly nucleate SWNTs, to escape from the cage.

Schmidt, Howard K.↗
NASA NTRS2020

Design of Si micro-cone light concentrators for heterogeneous integration with MWIR FPAs

Using 3-D finite difference time domain (FDTD) modeling, it is shown that micro-cone arrays obtained by anisotropic wet etching of Si have high potential for concentrating light on compact photodetector mesas of mid-wave infrared (MWIR) focal plane arrays (FPAs). The proposed structures can be heterogeneously integrated with FPAs possessing high quantum efficiency. They can be used to reduce the thermal noise and, potentially, increase the operating temperature of FPAs while maintaining high sensitivity of the photodetectors.

Astratov, Vasily N.↗
NASA NTRS2003

Process for Smoothing an Si Substrate after Etching of SiO2

A reactive-ion etching (RIE) process for smoothing a silicon substrate has been devised. The process is especially useful for smoothing those silicon areas that have been exposed by etching a pattern of holes in a layer of silicon dioxide that covers the substrate. Applications in which one could utilize smooth silicon surfaces like those produced by this process include fabrication of optical waveguides, epitaxial deposition of silicon on selected areas of silicon substrates, and preparation of silicon substrates for deposition of adherent metal layers. During etching away of a layer of SiO2 that covers an Si substrate, a polymer becomes deposited on the substrate, and the substrate surface becomes rough (roughness height approximately equal to 50 nm) as a result of over-etching or of deposition of the polymer. While it is possible to smooth a silicon substrate by wet chemical etching, the undesired consequences of wet chemical etching can include compromising the integrity of the SiO2 sidewalls and undercutting of the adjacent areas of the silicon dioxide that are meant to be left intact. The present RIE process results in anisotropic etching that removes the polymer and reduces height of roughness of the silicon substrate to less than 10 nm while leaving the SiO2 sidewalls intact and vertical. Control over substrate versus sidewall etching (in particular, preferential etching of the substrate) is achieved through selection of process parameters, including gas flow, power, and pressure. Such control is not uniformly and repeatably achievable in wet chemical etching. The recipe for the present RIE process is the following: Etch 1 - A mixture of CF4 and O2 gases flowing at rates of 25 to 75 and 75 to 125 standard cubic centimeters per minute (stdcm3/min), respectively; power between 44 and 55 W; and pressure between 45 and 55 mtorr (between 6.0 and 7.3 Pa). The etch rate lies between approximately equal to 3 and approximately equal to 6 nm/minute. Etch 2 - O2 gas flowing at 75 to 125 stdcm3/min, power between 44 and 55 W, and pressure between 50 and 100 mtorr (between 6.7 and 13.3 Pa).

Turner, Tasha↗
NASA NTRS2005

Structures Self-Assembled Through Directional Solidification

Nanotechnology has created a demand for new fabrication methods with an emphasis on simple, low-cost techniques. Directional solidification of eutectics (DSE) is an unconventional approach in comparison to low-temperature biomimetic approaches. A technical challenge for DSE is producing microstructural architectures on the nanometer scale. In both processes, the driving force is the minimization of Gibb's free energy. Selfassembly by biomimetic approaches depends on weak interaction forces between organic molecules to define the architectural structure. The architectural structure for solidification depends on strong chemical bonding between atoms. Constituents partition into atomic-level arrangements at the liquid-solid interface to form polyphase structures, and this atomic-level arrangement at the liquid-solid interface is controlled by atomic diffusion and total undercooling due to composition (diffusion), kinetics, and curvature of the boundary phases. Judicious selection of the materials system and control of the total undercooling are the keys to producing structures on the nanometer scale. The silicon-titanium silicide (Si-TiSi2) eutectic forms a rod structure under isothermal cooling conditions. At the NASA Glenn Research Center, directional solidification was employed along with a thermal gradient to promote uniform rods oriented with the thermal gradient. The preceding photomicrograph shows the typical transverse microstructure of a solidified Si-TiSi2 eutectic composition. The dark and light gray regions are Si and TiSi2, respectively. Preferred rod orientation along the thermal gradient was poor. The ordered TiSi2 rods have a narrow distribution in diameter of 2 to 3 m, as shown. The rod diameter showed a weak dependence on process conditions. Anisotropic etch behavior between different phases provides the opportunity to fabricate structures with high aspect ratios. The photomicrographs show the resulting microstructure after a wet chemical etch and a dry plasma etch. The wet chemical etches the silicon away, exposing the TiSi2 rods, whereas plasma etching preferentially etches the Si-TiSi2 interface to form a crater. The porous architectures are applicable to fabricating microdevices or creating templates for part fabrication. The porous rod structure can serve as a platform for fabricating microplasma devices for propulsion or microheat exchangers and for fabricating microfilters for miniatured chemical reactors. Although more work is required, self-assembly from DSE can have a role in microdevice fabrication.

Dynys, Frederick W.↗
NASA NTRS2003

Microelectromechanical Systems (MEMS) Broadband Light Source Developed

A miniature, low-power broadband light source has been developed for aerospace applications, including calibrating spectrometers and powering miniature optical sensors. The initial motivation for this research was based on flight tests of a Fabry-Perot fiberoptic temperature sensor system used to detect aircraft engine exhaust gas temperature. Although the feasibility of the sensor system was proven, the commercial light source optically powering the device was identified as a critical component requiring improvement. Problems with the light source included a long stabilization time (approximately 1 hr), a large amount of heat generation, and a large input electrical power (6.5 W). Thus, we developed a new light source to enable the use of broadband optical sensors in aerospace applications. Semiconductor chip-based light sources, such as lasers and light-emitting diodes, have a relatively narrow range of emission wavelengths in comparison to incandescent sources. Incandescent light sources emit broadband radiation from visible to infrared wavelengths; the intensity at each wavelength is determined by the filament temperature and the materials chosen for the filament and the lamp window. However, present commercial incandescent light sources are large in size and inefficient, requiring several watts of electrical power to obtain the desired optical power, and they emit a large percentage of the input power as heat that must be dissipated. The miniature light source, developed jointly by the NASA Glenn Research Center, the Jet Propulsion Laboratory, and the Lighting Innovations Institute, requires one-fifth the electrical input power of some commercial light sources, while providing similar output light power that is easily coupled to an optical fiber. Furthermore, it is small, rugged, and lightweight. Microfabrication technology was used to reduce the size, weight, power consumption, and potential cost-parameters critical to future aerospace applications. This chip-based light source has the potential for monolithic fabrication with on-chip drive electronics. Other uses for these light sources are in systems for vehicle navigation, remote sensing applications such as monitoring bridges for stress, calibration sources for spectrometers, light sources for space sensors, display lighting, addressable arrays, and industrial plant monitoring. Two methods for filament fabrication are being developed: wet-chemical etching and laser ablation. Both yield a 25-mm-thick tungsten spiral filament. The proof-of-concept filament shown was fabricated with the wet etch method. Then it was tested by heating it in a vacuum chamber using about 1.25 W of electrical power; it generated bright, blackbody radiation at approximately 2650 K. The filament was packaged in Glenn's clean-room facilities. This design uses three chips vacuum-sealed with glass tape. The bottom chip consists of a reflective film deposited on silicon, the middle chip contains a tungsten filament bonded to silicon, and the top layer is a transparent window. Lifetime testing on the package will begin shortly. The emitted optical power is expected to be approximately 1.0 W with the spectral peak at 1.1 mm.

Tuma, Margaret L.↗
NASA NTRS1988

Material growth and characterization for solid state devices

During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used to grow ternary and quaternary alloy III-V semiconductor thin films. Selective area growth of InGaAs was performed on InP substrates using a patterned sputtered quartz or spin-on glass layer. The etch back and growth characteristics with respect to substrate orientation were investigated. The etch back behavior is somewhat different from wet chemical etching with respect to the sidewall profiles which are observed. LPEE was also employed to grow epitaxial layers of InGaAsP alloys on InP substrates. The behavior of Mn as an acceptor dopant was investigated with low temperature Hall coefficient and photoluminescence measurements. A metal-organic vapor phase epitaxy system was partially complete within the grant period. This atmospheric pressure system will be used to deposit III-V compound and alloy semiconductor layers in future research efforts.

Collis, Ward J.↗
NASA NTRS1999

Innovative, Inexpensive Etching Technique Developed for Polymer Electro- Optical Structures

Electro-optic, polymer-based integrated optic devices for high-speed communication and computing applications offer potentially significant advantages over conventional inorganic electro-optic crystals. One key area of integrated optical technology--primary processing and fabrication--may particularly benefit from the use of polymer materials. However, as efforts concentrate on the miniaturization of electro-integrated circuit pattern geometries, the ability to etch fine features and smoothly sloped sidewalls is essential to make polymers useful for electro-integrated circuit applications. There are many existing processes available to etch polymer materials, but they all yield nearly vertical sidewalls. Vertical sidewalls are too difficult to reliably cover with a metal layer, and incomplete metalization degrades microwave performance, particularly at high frequency. However, obtaining a very sloped sidewall greatly improves the deposition of metal on the sidewall, leading to low-loss characteristics, which are essential to integrating these devices in highspeed electro-optic modulators. The NASA Lewis Research Center has developed in-house an inexpensive etching technique that uses a photolithography method followed by a simple, wet chemical etching process to etch through polymer layers. In addition to being simpler and inexpensive, this process can be used to fabricate smoothly sloped sidewalls by using a commercial none rodible mask: Spin-On-Glass. A commercial transparent material, Spin-On-Glass, uses processes and equipment similar to that for photoresist techniques.

Nguyen, Hung D.↗
NASA NTRS1989

Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching.

Bailey, Sheila G.↗
NASA NTRS1980

The automated array assembly task of the low-cost silicon solar array project, phase 2

Several specific processing steps as part of a total process sequence for manufacturing silicon solar cells were studied. Ion implantation was identified as the preferred process step for impurity doping. Unanalyzed beam ion implantation was shown to have major cost advantages over analyzed beam implantation. Further, high quality cells were fabricated using a high current unanalyzed beam. Mechanically masked plasma patterning of silicon nitride was shown to be capable of forming fine lines on silicon surfaces with spacings between mask and substrate as great as 250 micrometers. Extensive work was performed on advances in plated metallization. The need for the thick electroless palladium layer was eliminated. Further, copper was successfully utilized as a conductor layer utilizing nickel as a barrier to copper diffusion into the silicon. Plasma etching of silicon for texturing and saw damage removal was shown technically feasible but not cost effective compared to wet chemical etching techniques.

Coleman, M. G.↗
NASA NTRS1986

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Leon, R. P.↗
NASA NTRSDate not supplied

Microcalorimeter Absorber Optimization for 0.2 to 12 keV X-Rays

The Advanced Telescope for High ENergy Astrophysics (ATHENA) mission requires high quantum efficiency (QE) x-ray absorption, >90.6% at 7 keV and low specific heat capacity, 0.731 pJ/K. The designed ATHENA x-ray absorbers are cantilevered square tiles (pitch of 317 microns) of 1.05 μm thick Au and 5.51 μm thick Bi electroplated films supported by stems that connect the absorber to the detector below. We discuss some of the methods used to produce x-ray absorbers meeting these specifications for ATHENA. To tune the thermal conductance of the device and the effect on the normal-to superconducting transition shape, the stems need to be small diameter and can have a weak bottle-neck connection to the substrate. A funnel shape of the stem using a proximity exposed photoresist mold has been developed to improve the strength of the connections. Further requirements on the absorbers include low levels of fine particulate remaining on the substrate after production and zero shorts between absorbers due to incomplete ion milling or trapped fine particular between absorbers. To optimize for post patterning substrate cleanliness and absorber yield, we have examined several methods of absorber fabrication. Three such methods are 1) an ion mill/wet etch combination, 2) a photoresist mold for electroplating followed by wet or dry etch to remove the seed layer, and 3) an electroplating process with leveling to smooth the surface followed by ion mill to separate the absorbers. The different combinations of wet and dry etches lead to different yields and surface appearance of the absorber sidewalls. We present results on the achieved pixel yields and the energy resolution of pixels made with the various fabrication methods. We discuss the impact of absorber patterning method on performance, uniformity, and yield.

Edward J Wassell↗
NASA NTRS1979

Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.

Grunthaner, F. J.↗
NASA NTRS1981

AlGaAs/GaAs transverse junction stripe lasers with distributed feedback

Transverse junction stripe (TJS) lasers with periodic feedback were fabricated in two geometries. An interferometric and wet chemical etching technique was used to create a feedback grating across the entire pumping region for the distributed feedback (DFB) TJS laser and to create the separate distributed Bragg reflectors/DBR) for the TJS/DBR laser. The TJS/DFB laser was a double heterostructure device grown by liquid phase epitaxy (LPE) and had a third order grating etched in the top ALO.2GaO.8As layer. The grating was buried by growing an ALO.35GaO.65As layer on the grating by metal organic chemical vapor deposition (MO-CVD). The TJS/DBR laser was also fabricated in an LPE double heterostructure. The top AlGaAs layer was thinned to 0.1 micron over more than half of the laser so that the grating would be close to the GaAs active layer and optical field. Single mode operation in both configurations was obtained. The thermal shift of the laser wavelength in both cases was less than 1 Angstrom/deg K, compared to the 3 Angstrom/deg K shift of the spontaneous emission peak.

Hafich, M. J.↗
NASA NTRS1987

A V-grooved AlGaAs/GaAs passivated PN junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0 micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

Bailey, Sheila G.↗
NASA NTRS1987

A V-grooved AlGaAs/GaAs passivated pn junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0-micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

Bailey, S. G.↗
NASA NTRS1990

Optical and microwave detection using Bi-Sr-Ca-Cu-O thin films

Recent progress at the Johns Hopkins University Applied Physics Laboratory (JHU/APL) in the development of optical and microwave detectors using high temperature superconducting thin films is described. Several objectives of this work have been accomplished, including: deposition of Bi-Sr-Ca-Cu-O thin films by laser abation processing (LAP); development of thin film patterning techniques, including in situ masking, wet chemical etching and laser patterning; measurements of bolometric and non-bolometric signatures in patterned Bi-Sr-Ca-Cu-O films using optical and microwave sources, respectively; analysis and design of an optimized bolometer through computer simulation, and investigation of its use in a Fourier transform spectrometer. The focus here is primarily on results from the measurement of the bolometric and non-bolometric response.

Grabow, B. E.↗
NASA NTRS1991

Optical and microwave detection using Bi-Sr-Ca-Cu-O thin films

Recent progress at the Johns Hopkins University Applied Physics Laboratory (JHU/APL) in the development of optical and microwave detectors using high temperature superconducting thin films is described. Several objectives of this work have been accomplished, including: deposition of Bi-Sr-Ca-Cu-O thin films by laser abation processing (LAP); development of thin film patterning techniques, including in situ masking, wet chemical etching, and laser patterning; measurements of bolometric and non-bolometric signatures in patterned Bi-Sr-Ca-Cu-O films using optical and microwave sources, respectively; analysis and design of an optimized bolometer through computer simulation; and investigation of its use in a Fourier transform spectrometer. The focus here is primarily on results from the measurement of the bolometric and non-bolometric response.

Grabow, B. E.↗
NASA NTRS1994

A monolithic Si bolometer array for the Caltech Submillimeter Observatory

We are developing a submillimeter continuum camera for the Caltech Submillimeter Observatory (CSO) located on Mauna Kea. The camera will employ a monolithic Si bolometer array which was developed by Moseley et al. at the NASA Goddard Space Flight Center (GSFC). The camera will be cooled to a temperature of about 300 mK in a He-3 cryostat, and will operate primarily at wavelengths of 350 and 450 micrometers. We plan to use a bolometer array with 1x24 directly illuminated pixels, each pixel of dimension 1x2 sq mm, which is about half of the F/4 beam size at these wavelengths. Each pixel is 10 to 12 micrometers thick and is supported only by four thin Si legs formed by wet chemical etch. The pixels are doped n-type by phosphorus implantation, compensated by boron implantation. Signals from the bolometer pixels are first amplified by cryogenically cooled FET's. The signals are further amplified by room-temperature amplifiers and then separately digitized by 16 bit A/D converters with differential inputs. The outputs of the A/D converters are fed into a digital signal processing board via fiber-optic cables. The electronics and data acquisition system were designed by the Goddard group. We will report the status of this effort.

Wang, Ning↗