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NASA NTRS1977

Handbook of estimating data, factors, and procedures

Elements to be considered in estimating production costs are discussed in this manual. Guidelines, objectives, and methods for analyzing requirements and work structure are given. Time standards for specific specfic operations are listed for machining, sheet metal working, electroplating and metal treating; painting; silk screening, etching and encapsulating; coil winding; wire preparation and wiring; soldering; and the fabrication of etched circuits and terminal boards. The relation of the various elements of cost to the total cost as proposed for various programs by various contractors is compared with government estimates.

Freeman, L. M.↗

NASA NTRS1977

Gas-rich minerals in the Allende meteorite - Attempted chemical characterization

A ten-step etching experiment with HNO3 was performed on a chromite-carbon residue from Allende, in order to characterize the HNO3-soluble minor phase 'Q' that contains most of the primordial Ar, Kr, and Xe. Each etch fraction was analyzed by neutron activation analysis for Cr, Fe, Co, Ir, and Au. The results suggest that Q consists of two minerals, each comprising about 5 per cent of the residue. Phase Q1, of Fe/Cr ratio greater than 20, is soluble in cold dilute HNO3 and seems to contain most of the heavy noble gases. It may be an HCl-insoluble sulfide of nominal composition (Fe84Ni12Cr4)Sx. Phase Q2, of Fe/Cr ratio about 0.5 and somewhat enriched in Co, is slowly soluble in hot concentrated HNO3 and seems to be at least an order of magnitude poorer in heavy noble gases than Q1. It may be daubre-elite or an acid-soluble variety of chromite.

Gros, J.↗

NASA NTRS1977

Ion beam texturing

A microscopic surface texture was created by sputter-etching a surface while simultaneously sputter-depositing a lower sputter yield material onto the surface. A xenon ion-beam source was used to perform the texturing process on samples as large as 3-cm diameter. Textured surfaces have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, stainless steel, Au, and Ag. A number of texturing parameters are studied including the variation of texture with ion-beam powder, surface temperature, and the rate of texture growth with sputter etching time.

Hudson, W. R.↗

NASA NTRS1976

Sputtering

This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

Spalvins, T.↗

NASA NTRS1977

Optical and electrical properties of ion beam textured Kapton and Teflon

An electron bombardment argon ion source was used to ion etch polyimide (Kapton) and fluorinated ethylene, FEP (Teflon). Samples of polyimide and FEP were exposed to (0.5-1.0) keV Ar ions at ion current densities of (1.0-1/8) mA/sq cm for various exposure times. Changes in the optical and electrical properties of the samples were used to characterize the exposure. Spectral reflectance and transmittance measurements were made between 0.33 and 2.16 micron m using an integrating sphere after each exposure. From these measurements, values of solar absorptance were obtained. Total emittance measurements were also recorded for some samples. Surface resistivity was used to determine changes in the electrical conductivity of the etched samples. A scanning electron microscope recorded surface structure after exposure. Spectral optical data, resistivity measurements, calculated absorptance and emittance measurements are presented along with photomicrographs of the surface structure for the various exposures to Ar ions.

Mirtich, M. J.↗

NASA NTRS1978

X-ray photoelectron spectroscopy study of radiofrequency-sputtered refractory compound steel interfaces

Radiofrequency sputtering was used to deposit Mo2C, Mo2B5, and MoSi2 coatings on 440C steel substrates. Both sputter etched and preoxidized substrates were used, and the films were deposited with and without a substrate bias of -300 V. The composition of the coatings was measured as a function of depth by X-ray photoelectron spectroscopy combined with argon ion etching. In the interfacial region there was evidence that bias produced a graded interface in Mo2B5 but not in Mo2C. Oxides of iron and of all film constituents except carbon were presented in all cases but the iron oxide concentration was higher and the layer thicker on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 film. The presence of mixed oxides correlates with enhanced film adhesion.

Wheeler, D. R.↗

NASA NTRS1978

Array automated assembly, phase 2

An analysis was made of cost tradeoffs for shaping modified square wafers from cylindrical crystals. Tests were conducted of the effectiveness of texture etching for removal of surface damage on sawed wafers. A single step texturing etch appeared adequate for removal of surface damage on wafers cut with multiple blade reciprocating slurry saws.

Taylor, W. E.↗

NASA NTRS1978

Contact Whiskers for Millimeter Wave Diodes

Several techniques are investigated for making short conical tips on wires (whiskers) used for contacting millimeter-wave Schottky diodes. One procedure, using a phosphoric and chromic acid etching solution (PCE), is found to give good results on 12 microns phosphor-bronze wires. Full cone angles of 60 degrees-80 degrees are consistently obtained, compared with the 15 degrees-20 degrees angles obtained with the widely used sodium hydroxide etch. Methods are also described for cleaning, increasing the tip diameter (i.e. blunting), gold plating, and testing the contact resistance of the whiskers. The effects of the whisker tip shape on the electrical resistance, inductance, and capacitance of the whiskers are studied, and examples given for typical sets of parameters.

Kerr, A. R.↗

NASA NTRS1979

Automated Array Assembly, Phase 2

The solar cell module process development activities in the areas of surface preparation are presented. The process step development was carried out on texture etching including the evolution of a conceptual process model for the texturing process; plasma etching; and diffusion studies that focused on doped polymer diffusion sources. Cell processing was carried out to test process steps and a simplified diode solar cell process was developed. Cell processing was also run to fabricate square cells to populate sample minimodules. Module fabrication featured the demonstration of a porcelainized steel glass structure that should exceed the 20 year life goal of the low cost silicon array program. High efficiency cell development was carried out in the development of the tandem junction cell and a modification of the TJC called the front surface field cell. Cell efficiencies in excess of 16 percent at AM1 have been attained with only modest fill factors. The transistor-like model was proposed that fits the cell performance and provides a guideline for future improvements in cell performance.

Carbajal, B. G.↗

NASA NTRS1978

An XPS study of the adherence of refractory carbide, silicide, and boride RF-sputtered wear-resistant coatings

Radio frequency sputtering was used to deposit refractory carbide, silicide, and boride coatings on 440-C steel substrates. Both sputter etched and pre-oxidized substrates were used and the films were deposited with and without a substrate bias. The composition of the coatings was determined as a function of depth by X-ray photoelectron spectroscopy combined with argon ion etching. Friction and wear tests were conducted to evaluate coating adherence. In the interfacial region there was evidence that bias may produce a graded interface for some compounds. Biasing, while generally improving bulk film stoichiometry, can adversely affect adherence by removing interfacial oxide layers. Oxides of all film constituents except carbon and iron were present in all cases but the iron oxide coverage was only complete on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 films. In the case of mixed oxides, preoxidation enhanced film adherence. In the layered case it did not.

Brainard, W. A.↗

NASA NTRS1979

Volatiles in Chainpur chondrules

A study of volatile element concentrations in individual chondrules in the Chainpur LL3 chondrite is presented. Volatile elements differing in geochemical behavior tended to vary randomly and correlated variations were observed only for those elements inferred to occupy similar mineral sites. Variations in Co and Ni in kamacite show that metal in chondrule interiors has not approached equilibrium, and that postformational element distribution has mainly altered siderophile concentrations in surface metal grains, and has probably left ionic species unaltered. Etching to remove 3 to 5% of the chondrule dissolved siderophiles, enhanced Zn and Na volatiles relative to nonvolatile Cr in the etch, and produced a large Cd enhancement. If metamorphic redistribution of nonsiderophile volatiles was neglible, their high concentrations are inconsistent with chondrule formation by direct condensation, and models involving sudden melting of preexisting solids can explain the observations but require rapid cooling to prevent volatile loss.

Grossman, J. N.↗

NASA NTRS1979

Industrial capability to chem-mill aluminum alloy 2219 in T-37 and T-87

Procedures and chemical baths were developed for chem-milling aluminum alloy 2219. Using a series of sample etchings, it was found that good etching results could be obtained by using 'white plastic for porcelain repair (toluol, xylol, and petroleum distillates)' on top of cellosolve acetate as resist coatings and ferric chloride as on etchant.

Milewski, C., Jr.↗

NASA NTRS1980

Defect structure of web silicon ribbon

The results of a preliminary study of two dendritic web samples are presented. The structure and electrical activity of the defects in the silicon webs were studied. Optical microscopy of chemically etched specimens was used to determine dislocation densities. Samples were mechanically polished, then Secco etched for approximately 5 minutes. High voltage transmission electron microscopy was used to characterize the crystallographic nature of the defects.

Cunningham, B.↗

NASA NTRS1980

Method and apparatus for fabricating improved solar cell modules

A method and apparatus for fabricating an improved solar cell module is described. The apparatus includes a supply drum for feeding a flexible strip having etched electrical circuitry deposited on it a supply drum for feeding into overlying engagement with the flexible strip a flexible tape having a pair of exposed tacky surfaces, and a plurality of rams for receiving and depositing a plurality of solar cells in side-by-side relation on an exposed tacky surface of the tape in electrical contacting engagement with the etched circuitry.

Bloch, J. T.↗

NASA NTRS1980

The automated array assembly task of the low-cost silicon solar array project, phase 2

Several specific processing steps as part of a total process sequence for manufacturing silicon solar cells were studied. Ion implantation was identified as the preferred process step for impurity doping. Unanalyzed beam ion implantation was shown to have major cost advantages over analyzed beam implantation. Further, high quality cells were fabricated using a high current unanalyzed beam. Mechanically masked plasma patterning of silicon nitride was shown to be capable of forming fine lines on silicon surfaces with spacings between mask and substrate as great as 250 micrometers. Extensive work was performed on advances in plated metallization. The need for the thick electroless palladium layer was eliminated. Further, copper was successfully utilized as a conductor layer utilizing nickel as a barrier to copper diffusion into the silicon. Plasma etching of silicon for texturing and saw damage removal was shown technically feasible but not cost effective compared to wet chemical etching techniques.

Coleman, M. G.↗

NASA NTRS1981

Highlights of 10th plasma chemistry meeting

The chemical structure is given of a film formed by plasma polymerization from pyridine monomers. The film has a hydrophilic chemical structure, its molecular weight is 900, and the molecular system is C55H50N10O3. The electrical characteristics of a plasma polymerized film are described. The film has good insulating properties and was successfully applied as video disc coating. Etching resistance properties make it possible to use the film as a resist in etching. The characteristics of plasma polymer formed from monomers containing tetramethyltin are discussed. The polymer is in film form, displays good adhesiveness, is similar to UV film UV 35 in light absorption and is highly insulating.

Kitamura, K.↗

NASA NTRS1981

Stabilizing platinum in phosphoric acid fuel cells

The cathode of the phosphoric acid fuel cell uses a high surface area platinum catalyst supported on a carbon substrate. During operation, the small platinum crystallites sinter, causing loss in cell performance. A support was developed that stabilizes platinum in the high surface area condition by retarding or preventing the sintering process. The approach is to form etch pits in the carbon by oxidizing the carbon in the presence of a metal oxide catalyst, remove the metal oxide by an acid wash, and then deposit platinum in these pits. Results confirm the formation of etch pits in each of the three supports chosen for investigation: Vulcan XC-72R, Vulcan XC-72 that was graphized at 2500 C, and Shawinigan Acetylene Black.

Remick, R. J.↗

NASA NTRS1981

AlGaAs/GaAs transverse junction stripe lasers with distributed feedback

Transverse junction stripe (TJS) lasers with periodic feedback were fabricated in two geometries. An interferometric and wet chemical etching technique was used to create a feedback grating across the entire pumping region for the distributed feedback (DFB) TJS laser and to create the separate distributed Bragg reflectors/DBR) for the TJS/DBR laser. The TJS/DFB laser was a double heterostructure device grown by liquid phase epitaxy (LPE) and had a third order grating etched in the top ALO.2GaO.8As layer. The grating was buried by growing an ALO.35GaO.65As layer on the grating by metal organic chemical vapor deposition (MO-CVD). The TJS/DBR laser was also fabricated in an LPE double heterostructure. The top AlGaAs layer was thinned to 0.1 micron over more than half of the laser so that the grating would be close to the GaAs active layer and optical field. Single mode operation in both configurations was obtained. The thermal shift of the laser wavelength in both cases was less than 1 Angstrom/deg K, compared to the 3 Angstrom/deg K shift of the spontaneous emission peak.

Hafich, M. J.↗