Results for “RESISTANCE DEVICE” — Page 20

NASA NTRS1975

Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices

The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

Chu, T. L.↗

NASA NTRS1992

Modeling, design, fabrication, and testing of InP Gunn devices in the D-band (110 GHz - 170 GHz)

The development of fundamental Gunn sources for D-band frequencies requires improvements of doping profiles, processing technology, and circuit design. We have developed a technology for fabricating InP Gunn diodes using an InGaAs etch-stop layer between the InP substrate and the device layers. The epitaxial layers were grown by CBE. During device processing, the substrate is completely removed. Substrateless devices with an n(+) InGaAs cap layer are expected to have reduced contact and series resistances, and skin effect losses. This technology gives better uniformity and control of the device geometry across the processed chip. InP Gunn devices with a 1.7 micron long active region (doping : 9 x 10(exp 15) cm(exp -3)) have been mounted on copper heat sinks. Two tapered leads were then bonded to the diode and to four quartz standoffs. As a preliminary result, an output power of 13 mW at 82 GHz was obtained. Based on these RF measurements, we determine appropriate material parameters to be used in the Ensemble Monte Carlo model. Subsequently, we use this model to design and evaluate the performance of InP Gunn Devices for D-band frequencies. Using the same technology, we are currently processing Gunn devices with a 1 micron long active region for operation at higher frequencies.

Kamoua, R.↗

NASA NTRS2007

Charge dissipative dielectric for cryogenic devices

A Superconducting Quantum Interference Device (SQUID) is disclosed comprising a pair of resistively shunted Josephson junctions connected in parallel within a superconducting loop and biased by an external direct current (dc) source. The SQUID comprises a semiconductor substrate and at least one superconducting layer. The metal layer(s) are separated by or covered with a semiconductor material layer having the properties of a conductor at room temperature and the properties of an insulator at operating temperatures (generally less than 100 Kelvins). The properties of the semiconductor material layer greatly reduces the risk of electrostatic discharge that can damage the device during normal handling of the device at room temperature, while still providing the insulating properties desired to allow normal functioning of the device at its operating temperature. A method of manufacturing the SQUID device is also disclosed.

Cantor, Robin Harold↗

NASA NTRS2015

Surface Passivation by Quantum Exclusion Using Multiple Layers

A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1.times.10.sup.14 cm.sup.-2, and locally exceeding 10.sup.22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

Hoenk, Michael E.↗

NASA NTRS1995

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

SUBHARMONIC EXCITATION↗

NASA NTRS2016

Closed Loop Control Compact Exercise Device for Use on MPCV

Long duration space travel to Mars or to an asteroid will expose astronauts to extended periods of reduced gravity. To combat spaceflight physiological deconditioning, astronauts will use resistive and aerobic exercise regimens for the duration of the space flight to minimize the loss of bone density, muscle mass and aerobic capacity that occurs during exposure to a reduced gravity environment. Unlike the International Space Station (ISS), the mass and volume available for an exercise device in the next generation of spacecraft is limited. Therefore, compact exercise device prototypes are being developed for human in the loop evaluations. The NASA Human Research Program (HRP) is managing Advanced Exercise Concepts (AEC) requirements development and candidate technology maturation for all exploration mission profiles from Multi-Purpose Crew Vehicle (MPCV) exploration missions (e.g., EM-2, up to 21 day) to Mars Transit (up to 1000 day) missions. Numerous technologies have been considered and evaluated against HRP-approved functional requirements and include flywheel, pneumatic and closed-loop microprocessor-controlled motor driven power plants. Motor driven technologies offer excellent torque density and load accuracy characteristics as well as the ability to create custom mechanical impedance (the dynamic relationship between force and velocity) and custom load versus position exercise algorithms. Further, closed-loop motor-driven technologies offer the ability to monitor exercise dose parameters and adapt to the needs of the crewmember for real time optimization of exercise prescriptions. A simple proportional-integral-derivative (PID) controller is demonstrated in a prototype motor driven exercise device with comparison to resistive static and dynamic load set points and aerobic work rate targets. The resistive load term in the algorithm includes a constant force component (Fcmg) as well as inertial component (Fima) and a discussion of system tuning is presented in terms of addressing key functional requirements and human interfaces. The device aerobic modality is modelled as a rowing exercise using ground data sets obtained from Concept 2 rowers as well as competitive rowing1. A discussion of software and electronic implementations are presented which demonstrate unique approaches to meeting the constrained mass, volume and power requirements of the MPCV. . In addition to utilizing traditional PID control, controllers utilizing state feedback with gains solved using a Linear Quadratic Regulator will be developed. Controllability and observability will be utilized to investigate the need for state measurement in the design. As the control system directly interacts with human test subjects, robust methods such as H-infinity are also being investigated.1. Kleshnev V. Biomechanics. In: Rowing, Handbook of Sports Medicine and Science. ed. by Secher N., Voliantis S. IOC Medical Commission, Blackwell Pub. pp. 22-34, 2007

microgravity↗

NASA NTRS2000

Hierarchical Statistical 3D ' Atomistic' Simulation of Decanano MOSFETs: Drift-Diffusion, Hydrodynamic and Quantum Mechanical Approaches

When MOSFETs are scaled to deep submicron dimensions the discreteness and randomness of the dopant charges in the channel region introduces significant fluctuations in the device characteristics. This effect, predicted 20 year ago, has been confirmed experimentally and in simulation studies. The impact of the fluctuations on the functionality, yield, and reliability of the corresponding systems shifts the paradigm of the numerical device simulation. It becomes insufficient to simulate only one device representing one macroscopical design in a continuous charge approximation. An ensemble of macroscopically identical but microscopically different devices has to be characterized by simulation of statistically significant samples. The aims of the numerical simulations shift from predicting the characteristics of a single device with continuous doping towards estimating the mean values and the standard deviations of basic design parameters such as threshold voltage, subthreshold slope, transconductance, drive current, etc. for the whole ensemble of 'atomistically' different devices in the system. It has to be pointed out that even the mean values obtained from 'atomistic' simulations are not identical to the values obtained from continuous doping simulations. In this paper we present a hierarchical approach to the 'atomistic' simulation of aggressively scaled decanano MOSFETs. A full scale 3D drift-diffusion'atomostic' simulation approach is first described and used for verification of the more economical, but also more restricted, options. To reduce the processor time and memory requirements at high drain voltage we have developed a self-consistent option based on a thin slab solution of the current continuity equation only in the channel region. This is coupled to the Poisson's equation solution in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison with the full self-consistent solution. At low drain voltage only single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. A pilot version of a hydrodynamic 'atomistic' simulator has been developed in order to study the effect of the nonequilibrium, non local transport in decanano MOSFETs on the random dopant induced current fluctuations. For the first time we have also applied the density gradient approach in 3D to investigate the effect of the quantum confinement on the threshold voltage fluctuations. The developed 'atomistic' simulation techniques have been applied to study various fluctuation resistant MOSFET architectures including epitaxial and delta doped devices.

Asenov, Asen↗

NASA NTRS1981

Constricted double-heterojunction AlGaAs diode lasers - Structures and electrooptical characteristics

Constricted double-heterojunction (CDH) diode lasers are presented as a class of nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various CDH structures are discussed while treating such topics as liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers with positive-index lateral mode confinement provides single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C, while exhibiting light-current characteristics with second-harmonic distortions as low as -57 dB below the fundamental level. Semileaky guide CDH lasers with an asymmetric leaky cavity provide single-mode operation to 15-20 mW/facet CW, and to 50 mW/facet at 50% duty cycle.

Botez, D.↗

NASA NTRS1982

Studies of single-mode injection lasers and of quaternary materials. Volume 1: Single-mode constricted double-heterojunction AlGaAs diode lasers

Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various types of CDH structures are considered under three general topics: liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers have positive-index lateral-mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C; light-current characteristics with second-harmonic distortion as low as -57 dB below the fundamental level; threshold-current temperature coefficients, as high as 375 C (pulsed) and 310 C (CW); constant external differential quantum efficiency to 100 C; and lasing operation to 170 C CW and 280 C pulsed. Semileakyguide CDH lasers have an asymmetric leaky cavity for lateral-mode confinement and provide single-mode operation to 15 to 20 mW/facet CW and to 50 mW/facet at 50% duty cycle. Modulation characteristics and preliminary reliability data are discussed.

Botez, D.↗

NASA NTRS2009

Expansion Compression Contacts for Thermoelectric Legs

In a proposed alternative to previous approaches to making hot-shoe contacts to the legs of thermoelectric devices, one relies on differential thermal expansion to increase contact pressures for the purpose of reducing the electrical resistances of contacts as temperatures increase. The proposed approach is particularly applicable to thermoelectric devices containing p-type (positive-charge-carrier) legs made of a Zintl compound (specifically, Yb14MnSb11) and n-type (negative charge-carrier) legs made of SiGe. This combination of thermoelectric materials has been selected for further development, primarily on the basis of projected thermoelectric performance. However, it is problematic to integrate, into a practical thermoelectric device, legs made of these materials along with a metal or semiconductor hot shoe that is required to be in thermal and electrical contact with the legs. This is partly because of the thermal-expansion mismatch of these materials: The coefficient of thermal expansion (CTE) of SiGe is 4.5 x 10(exp -6) C (exp -1), while the CTE of Yb14MnSb11 is 20 x 10(exp -6) C(exp -1). Simply joining a Yb14MnSb11 and a SiGe leg to a common hot shoe could be expected to result in significant thermal stresses in either or both legs during operation. Heretofore, such thermal stresses have been regarded as disadvantageous. In the proposed approach, stresses resulting from the CTE mismatch would be turned to advantage.

Sakamoto, Jeffrey↗

NASA NTRS1994

Vapor generator wand

In low speed wind tunnels it is often desirable to visualize airflow to augment observations made with instruments such as strain and pressure gages. Current technology devices for delivery of a vapor are bulky and thus disrupt local airflow. It is the object of this invention to provide a device capable of delivering a stream of vapor with a minimal effect on local airflow. The present invention achieves this object by utilizing a narrow tube as a heating device for producing the vapor. Running an electrical current through the tube provides resistive heating to a liquid which produces a vapor when boiled. As the entire heating and delivery portion of the device is simply a small cylinder the disruption to airflow within the tunnel is minimized. this allows an experimenter to place the source of vapor fairly close to a model without causing too much change to the model data. The novelty of the present invention lies in reducing the bulk of current technology devices by combining the acts of heating and delivery.

Robelen, David B.↗

NASA NTRS1991

Silicon device performance measurements to support temperature range enhancement

Semiconductor power devices are typically rated for operation below 150 C. Little data is known for power semiconductors over 150 C. In most cases, the device is derated to zero operating power at 175 C. At the high temperature end of the temperature range, the intrinsic carrier concentration increases to equal the doping concentration level and the silicon behaves as an intrinsic semiconductor. The increase in intrinsic carrier concentration results in a shift of the Fermi level toward mid-bandgap at elevated temperatures. This produces a shift in devices characteristics as a function of temperature. By increasing the doping concentration higher operating temperatures can be achieved. This technique was used to fabricate low power analog and digital devices in silicon with junction operating temperatures in excess of 300 C. Additional temperature effects include increased p-n junction leakage with increasing temperature, resulting in increased resistivity. The temperature dependency of physical properties results in variations in device characteristics. These must be quantified and understood in order to develop extended temperature range operation.

Bromstead, James↗

NASA NTRS1981

Large area, low cost space solar cells with optional wraparound contacts

Design parameters for two large area, low cost solar cells are presented, and electron irradiation testing, thermal alpha testing, and cell processing are discussed. The devices are a 2 ohm-cm base resistivity silicon cell with an evaporated aluminum reflector produced in a dielectric wraparound cell, and a 10 ohm-cm silicon cell with the BSF/BSR combination and a conventional contact system. Both cells are 5.9 x 5.9 cm and require 200 micron thick silicon material due to mission weight constraints. Normalized values for open circuit voltage, short circuit current, and maximum power calculations derived from electron radiation testing are given. In addition, thermal alpha testing values of absorptivity and emittance are included. A pilot cell processing run produced cells averaging 14.4% efficiencies at AMO 28 C. Manufacturing for such cells will be on a mechanized process line, and the area of coverslide application technology must be considered in order to achieve cost effective production.

Michaels, D.↗

NASA NTRS1982

Wind-tunnel investigation of effects of wing-leading-edge modifications on the high angle-of-attack characteristics of a T-tail low-wing general-aviation aircraft

Exploratory tests have been conducted in the NASA-Langley Research Center's 12-Foot Low-Speed wind Tunnel to evaluate the application of wing-leading-edge devices on the stall-departure and spin resistance characteristics of a 1/6-scale model of a T-tail general-aviation aircraft. The model was force tested with an internal strain-gauge balance to obtain aerodynamic data on the complete configuration and with a separate wing balance to obtain aerodynamic data on the outer portion of the wing. The addition of the outboard leading-edge droop eliminated the abrupt stall of the windtip and maintained or increased the resultant-force coefficient up to about alpha = 32 degrees. This change in slope of the resultant-force coefficient curve with angle of attack has been shown to be important for eliminating autorotation and for providing spin resistance.

White, E. R.↗

NASA NTRS1986

The 60 GHz IMPATT diode development

The objective is to develop 60 GHz IMPATT diodes suitable for communications applications. The performance goals of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10-year lifetime. The final design of the 60 GHz IMPATT structure evolved from computer simulations performed at the University of Michigan. The initial doping profile, involving a hybrid double-drift (HDD) design, was derived from a drift-diffusion model that used the static velocity-field characteristics for GaAs. Unfortunately, the model did not consider the effects of velocity undershoot and delay of the avalanche process due to energy relaxation. Consequently, the initial devices were oscillating at a much lower frequency than anticipated. With a revised simulation program that included the two effects given above, a second HDD profile was generated and was used as a basis for fabrication efforts. In the area of device fabrication, significant progress was made in epitaxial growth and characterization, wafer processing, and die assembly. The organo-metallic chemical vapor deposition (OMCVD) was used. Starting with a baseline X-Band IMPATT technology, appropriate processing steps were modified to satisfy the device requirements at V-Band. In terms of efficiency and reliability, the device requirements dictate a reduction in its series resistance and thermal resistance values. Qualitatively, researchers were able to reduce the diodes' series resistance by reducing the thickness of the N+ GaAs substrate used in its fabrication.

Dat, Rovindra↗

NASA NTRS1991

Full-scale semispan tests of a business-jet wing with a natural laminar flow airfoil

A full-scale semispan model was investigated to evaluate and document the low-speed, high-lift characteristics of a business-jet class wing that utilized the HSNLF(1)-0213 airfoil section and a single-slotted flap system. Also, boundary-layer transition effects were examined, a segmented leading-edge droop for improved stall/spin resistance was studied, and two roll-controlled devices were evaluated. The wind-tunnel investigation showed that deployment of single-slotted, trailing-edge flap was effective in providing substantial increments in lift required for takeoff and landing performance. Fixed-transition studies to investigate premature tripping of the boundary layer indicated no adverse effects in lift and pitching-moment characteristics for either the cruise or landing configuration. The full-scale results also suggested the need to further optimize the leading-edge droop design that was developed in the subscale tests.

Hahne, David E.↗

NASA NTRSDate not supplied

Kinematic Sensors Evaluation for Spaceflight Exercise Data Collections

INTRODUCTION: On the International Space Station (ISS), exercise feedback from astronauts is very important to diagnose and mitigate any form-related injuries and ensure efficacious exercise prescriptions and systems. Going forward, exploration exercise efforts seek to gain further quantitative data of human and system performance. Currently, methods of collecting in-flight exercise data on the ISS are limited to marker-based motion capture (MoCap) where astronauts must wear reflective markers over their clothes and specialized cameras are used. The main objective of this work was to investigate the following alternative tracking options: markerless video-based MoCap and inertial measurement units (IMUs). These were compared against traditional marker-based MoCap to evaluate kinematic accuracy and inform feasible methods for future exercise data collections on the ISS, especially in support of future Vibration Isolation and Stabilization (VIS) system development. METHODS: Three test subjects performed a variety of flight-like resistance and aerobic exercises using the Miniature Exercise Device (MED-2), Concept-2 rowing ergometer, barbell mockup, bench (e.g., for bench press, hip thruster, and cycling), and a custom structure for dips. These were intended also to represent exercises which could be performed on the multi-modality European Enhanced Exploration Exercise Device (E4D) [1]. The marker-based MoCap data, collected through a 16-camera OptiTrack MoCap system, was regarded as the gold standard to compare the data against. Passive markers were affixed to each subject according to a modified full body Plug-in Gait marker set [2] with 46 total markers. The markerless MoCap data was collected using two GoPro Hero7 cameras and one GoPro Hero11 camera. For the IMU data, a full body set of 17 Xsens DOTs were placed on the subject: 10 upper body and 7 lower body IMUs. Biomechanical modeling and evaluation was conducted through OpenSim [3] (MoCap), OpenSense [4] (IMU), OpenCap [5] (markerless), ENABLE [6] (markerless), and other modeling software. Secondary objectives included comparing the volume of equipment, reducing mass and crew set-up time. RESULTS AND DISCUSSION: While there were issues with initial processing for the IMUs and markerless MoCap, the results aided in the understanding of each sensor, developing end-to-end processes, and identifying future needs. Some observed concerns with the markerless MoCap approaches included being cognizant of a cluttered background, number of people in field of view, camera number and placement. Some challenges with the IMUs included possible sliding, early deactivation possibly due to exercise pose, and large quantity sensor synchronization. Overall, the markerless MoCap option may be the preferred method of data collection and processing as it provides a solution for certain IMU shortcomings and may be least in equipment volume, upmass, and crew setup time. CONCLUSIONS: While this work was mainly focused on ISS data collection, these sensor data along with continued evaluation and development efforts will help to establish best methods for exercise data collection on Gateway, for other Artemis missions, and beyond. Details on the latest end-to-end processing of the data and results will be presented, along with lessons learned and recommended sensor selection and methods.

S. Faragalla↗

NASA NTRS2024

Kinematic Sensors Evaluation for Spaceflight Exercise Data Collections

INTRODUCTION: On the International Space Station (ISS), exercise feedback from astronauts is very important to diagnose and mitigate any form-related injuries and ensure efficacious exercise prescriptions and systems. Going forward, exploration exercise efforts seek to gain further quantitative data of human and system performance. Currently, methods of collecting in-flight exercise data on the ISS are limited to marker-based motion capture (MoCap) where astronauts must wear reflective markers over their clothes and specialized cameras are used. The main objective of this work was to investigate the following alternative tracking options: markerless video-based MoCap and inertial measurement units (IMUs). These were compared against traditional marker-based MoCap to evaluate kinematic accuracy and inform feasible methods for future exercise data collections on the ISS, especially in support of future Vibration Isolation and Stabilization (VIS) system development. METHODS: Three test subjects performed a variety of flight-like resistance and aerobic exercises using the Miniature Exercise Device (MED-2), Concept-2 rowing ergometer, barbell mockup, bench (e.g., for bench press, hip thruster, and cycling), and a custom structure for dips. These were intended also to represent exercises which could be performed on the multi-modality European Enhanced Exploration Exercise Device (E4D) [1]. The marker-based MoCap data, collected through a 16-camera OptiTrack MoCap system, was regarded as the gold standard to compare the data against. Passive markers were affixed to each subject according to a modified full body Plug-in Gait marker set [2] with 46 total markers. The markerless MoCap data was collected using two GoPro Hero7 cameras and one GoPro Hero11 camera. For the IMU data, a full body set of 17 Xsens DOTs were placed on the subject: 10 upper body and 7 lower body IMUs. Biomechanical modeling and evaluation was conducted through OpenSim [3] (MoCap), OpenSense [4] (IMU), OpenCap [5] (markerless), ENABLE [6] (markerless), and other modeling software. Secondary objectives included comparing the volume of equipment, reducing mass and crew set-up time. RESULTS AND DISCUSSION: While there were issues with initial processing for the IMUs and markerless MoCap, the results aided in the understanding of each sensor, developing end-to-end processes, and identifying future needs. Some observed concerns with the markerless MoCap approaches included being cognizant of a cluttered background, number of people in field of view, camera number and placement. Some challenges with the IMUs included possible sliding, early deactivation possibly due to exercise pose, and large quantity sensor synchronization. Overall, the markerless MoCap option may be the preferred method of data collection and processing as it provides a solution for certain IMU shortcomings and may be least in equipment volume, upmass, and crew setup time. CONCLUSIONS: While this work was mainly focused on ISS data collection, these sensor data along with continued evaluation and development efforts will help to establish best methods for exercise data collection on Gateway, for other Artemis missions, and beyond. Details on the latest end-to-end processing of the data and results will be presented, along with lessons learned and recommended sensor selection and methods.

S Faragalla↗