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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Microstructure-Property Relationships in Epitaxial Cu(In, Ga)Se2 Solar-Cell Absorbers

Epitaxially grown Cu(In,Ga)Se 2 (CIGS) absorber layers were analyzed by various techniques in scanning electron microscopy in order to reveal microstructure-property relationships in these thin films. Owing to their epitaxial nature, these CIGS absorber layers do not contain any grain boundaries, but only anti-phase domains (APDs) and dislocations. By combining electron channeling-contrast imaging, electron backscatter diffraction, and cathodoluminescence (CL), in some cases on identical specimen positions of polished cross-sections of CIGS/Mo/glass stacks, it was possible to correlate the presence and orientations of APDs and dislocations with the lateral distributions of the CL intensity and emission-peak energy. We studied CIGS layers with three different [Ga]/([Ga]+[In]) ratios as well as with and without NaF/KF treatments. Considerable differences between the CIGS layer properties in the microstructure-property relationships were found, depending on the growth parameters. Dislocations in the epitaxial CIGS layers do not tend to exhibit strong CL intensity decreases, which contrasts with the situation in numerous other semiconductor materials.

anti-phase domains↗
DOE OSTI2024

A Comparison of CdS and Zn(O,S) Buffer Layers in (Ag,Cu)(In,Ga)Se2 Solar Cells

Cu(In,Ga)Se 2 -based solar cells typically use a C dS buffer layer, even though its relatively low bandgap causes parasitic absorption. While alternatives to CdS have been explored in other studies, limited results have been shown for Ag-alloyed CIGS (ACIGS). In this study, ACIGS solar cells with both CdS and Zn(O,S) buffer layers were fabricated and compared for solar cell performance. The Zn(O,S) buffer slightly improved J sc through reduced absorption, although surface optimization is necessary. The Zn(O,S) ACIGS also had improved FF through reduced series resistance and ideality factor, which could be improved further through optimization. However, the Voc in the Zn(O,S) samples was reduced, likely due to increased bulk and front interface recombination. This study shows the promise of Zn(O,S) as a buffer layer in ACIGS solar cells and suggests pathways for further improvement.

absorption↗
DOE OSTI2021

Cell-level reliability testing procedures for CIGS photovoltaics

The reliability of photovoltaics is commonly studied at the module level. Many reliability problems originate from module attributes, such as metal interconnections to cells, junction boxes. However, significant work in reliability can also be done prior to module design. Testing for reliability earlier in the research cycle increases the probability of avoiding common module reliability problems before cell changes are implemented on a large scale. Cell-level reliability studies can thus lower the rates of module failures in the field and provide confidence to investors that new technologies will perform as advertised. This report summarizes how we investigated three reliability concerns in Cu(In,Ga)Se 2 (CIGS) photovoltaics at the cell level: metastability, shading-induced damage, and potential-induced degradation (PID). We find that examining these concerns required developing robust measurement protocols including the fabrication of novel testing structures. This information will allow readers to incorporate sound metrics for investigating reliability phenomena and aid their studies of cell and module reliability improvements.

14 SOLAR ENERGY↗
DOE OSTI2020

Materials Data on Ta2Se17Br12 by Materials Project

(Ta)2(Se)17(Br)12 crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of twenty-four hydrobromic acid molecules, four tantalum molecules, and two Se clusters. In each Se cluster, there are seventeen inequivalent Se2- sites. In the first Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. There are one shorter (2.34 Å) and one longer (2.38 Å) Se–Se bond lengths. In the second Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. The Se–Se bond length is 2.33 Å. In the third Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. There are one shorter (2.32 Å) and one longer (2.47 Å) Se–Se bond lengths. In the fourth Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. The Se–Se bond length is 2.45 Å. In the fifth Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. The Se–Se bond length is 2.39 Å. In the sixth Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. The Se–Se bond length is 2.34 Å. In the seventh Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. The Se–Se bond length is 2.41 Å. In the eighth Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. The Se–Se bond length is 2.28 Å. In the ninth Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. The Se–Se bond length is 2.57 Å. In the tenth Se2- site, Se2- is bonded in a trigonal non-coplanar geometry to three Se2- atoms. The Se–Se bond length is 2.39 Å. In the eleventh Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. The Se–Se bond length is 2.36 Å. In the twelfth Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. The Se–Se bond length is 2.35 Å. In the thirteenth Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. The Se–Se bond length is 2.39 Å. In the fourteenth Se2- site, Se2- is bonded in a trigonal non-coplanar geometry to three Se2- atoms. The Se–Se bond length is 2.56 Å. In the fifteenth Se2- site, Se2- is bonded in a distorted water-like geometry to two Se2- atoms. The Se–Se bond length is 2.28 Å. In the sixteenth Se2- site, Se2- is bonded in a water-like geometry to two Se2- atoms. The Se–Se bond length is 2.40 Å. In the seventeenth Se2- site, Se2- is bonded in a distorted water-like geometry to two Se2- atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Nb2Se17Cl12 by Materials Project

(NbCl6)2(Se)17 crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of thirty-four selenium molecules and four NbCl6 clusters. In each NbCl6 cluster, Nb5+ is bonded in an octahedral geometry to six Cl1- atoms. There are a spread of Nb–Cl bond distances ranging from 2.37–2.41 Å. There are six inequivalent Cl1- sites. In the first Cl1- site, Cl1- is bonded in a single-bond geometry to one Nb5+ atom. In the second Cl1- site, Cl1- is bonded in a single-bond geometry to one Nb5+ atom. In the third Cl1- site, Cl1- is bonded in a single-bond geometry to one Nb5+ atom. In the fourth Cl1- site, Cl1- is bonded in a single-bond geometry to one Nb5+ atom. In the fifth Cl1- site, Cl1- is bonded in a single-bond geometry to one Nb5+ atom. In the sixth Cl1- site, Cl1- is bonded in a single-bond geometry to one Nb5+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Metastability and Long-Term Degradation in CIGS Devices: Effect of Alkali Treatments, Back Contact and Emitter Layers

Thin-film solar cell technologies often suffer from metastable and long-term performance degradation, which may or may not be reversible. The presence of the transient or degradation issues pose challenges for energy-yield prediction in the field for these technologies. Cu(In,Ga)(S,Se) 2 solar cells are a promising thin-film technology, however, the underlying mechanisms of instability in these devices are not well understood. The most common mechanism of metastability in CIGS solar cells has been speculated to be the configuration changes of (VSe-VCu) divacancy complex. However, the role of metastability in light soaking behavior and the effect of alkali treatments and buffer layers is not understood. The goal of the current project is to understand the effect of alkali treatments and buffer materials on metastability and light soaking behavior and develop a device model to simulate experimental results. Input parameters are taken from literature or derived from first-principle calculations, and are fine-tuned through validation experiments.

14 SOLAR ENERGY↗
DOE OSTI2021

Generalizable Mechanistic Understanding of Module-Level Light-Moisture and Thermal-Induced Instabilities in CIGS Photovoltaics (Final Report)

The objectives of this project are to identify the root causes of light, heat and humdity induced instabilities in the operation and accelerated testing of commercial Cu(In,Ga)Se 2 [CIGS] photovoltaic modules produced by major module manufacturers (e.g.: Solibro and MiaSolé), correlate them with module degradation/failure modes, and produce accurate service lifetime prediction models.

14 SOLAR ENERGY↗
DOE OSTI2022

Advanced Thin Film Core Technology: CIGS Final Technical Report (FTR)

Cu(In,Ga)Se 2 (CIGS) thin-film photovoltaics are a high-efficiency and reliable technology. This project completed research in two important areas and was designed to work collaboratively with industrial partners. Task 1: Alkali Science focused on alkali post-deposition treatments (PDT). PDTs have been instrumental in the dramatic voltage improvements that have moved CIGS device efficiencies from 20% to 23.35% [1]. Based on a survey of CIGS companies at the beginning of the project, the single biggest breakthrough for the CIGS community would be a mechanistic understanding of the role of alkalis in the material system. Significant accomplishments of Task 1: Alkali Science: 1) KF post-deposition treatments were shown to improve lifetime, open-circuit voltage (VOC), and efficiency of industrial partner samples, even when done as a later step, separate from the original CIGS deposition. 2) KF boosted efficiency when incorporated at the end of the third stage of NREL CIGS growth. 3) XPS characterization of CIGS surfaces with and without PDTs led to a proposed mechanism whereby K drives structural transformation at 350 degrees C that is locked in at room temperature even after K is rinsed away. 4) Published recipes for KF and RbF PDTs. Literature to date did not provide enough detail to quickly reproduce experimental results. 5) Identified most important parameters (RbF cell temperature and lamp setpoint temperature) and set boundaries for successful RbF PDTs. The purpose of Task 2: Cell-level Reliability was to overcome the largest challenges to investor confidence and long product lifetime in CIGS-based photovoltaic products: metastability, shading-induced hot spots, and potential-induced degradation (PID). Key findings were made in each of these areas by studying CIGS reliability at the cell level: 1) Published NREL's cell-level reliability testing procedures along with challenges that were encountered while developing them. These were also distributed to the community through an MRS conference presentation. 2) Decreased metastability by adding a CdS hole-injection layer between the CIGS and Zn(O,S) in the device stack. It also improved device performance. Materials other than CdS can be used for the same purpose. 3) Reduced front-glass PID by replacing soda-lime glass with low-Na borosilicate glass. 4) Found that PID depends on leakage current and light/electrical bias. This will help labs avoid test-specific degradation. 5) Discovered that CIGS can suffer from two different types of PID with different mechanisms. Front is slower and leads to shunting ZnO. Back is faster and degrades the p-n junction. 6) Holding cells at open circuit slows PID compared to short circuit. This affects testing protocols for glass/glass modules.

14 SOLAR ENERGY↗
DOE OSTI2023

Post-growth Recrystallization by Halides for High Throughput CIGS Photovoltaics

The objective of this project in broad terms was to address the capital equipment expense associated with Cu(In,Ga)Se 2 (CIGS) as a material for photovoltaic devices. This project has demonstrated a new method for processing CIGS using metal halides to recrystallize and enhance the quality of the final materials. A wide spectrum of metal halides were examined. Of these Cu and In chlorides and AgBr were found to be most effective; and, of these, AgBr was found to produce exemplary results. Cu and In chlorides were found to produce undesirable changes in film composition. The project demonstrated over 16% efficiency in a CIGS device deposited at 10x the standard rate of ~1 μm/hr and with a >100°C reduction in maximum temperature to 450°C. The entire deposition of the absorber layer including the recrystallization step required only 15 minutes, which is a 4x decrease in processing time.

14 SOLAR ENERGY↗
DOE OSTI2024

CIGS Technology Advancement via Fundamental Modeling of Defect/Impurity Interactions (Final Technical Report)

The primary goals of the proposed work were to provide modeling tools (and the associated insight which comes along with model development) for design and optimization of CuIn x Ga 1-x Se 2 (CIGS) and CdSeTe (CST) solar cell manufacturing processes and to establish the foundation for comprehensive end-to-end predictive modeling tools to enable optimization of thin film photovoltaic technology for performance, cost, yield, and reliability. The initial focus of efforts within this project was to develop coupled process/optical/device models for CIGS PV technology and to work with Siva Power to apply that TCAD (technology computer-aided design) system to improve the efficiency and reduce manufacturing costs for CIGS solar cells. Our approach to that end was to generate an extensive database of DFT calculations and to use those calculations via statistical thermodynamics methods and Monte Carlo simulation to develop and characterize models for the behavior of native defects as well as intentional and unintentional impurities, including the redistribution of the primary components of CIGS films. Increased effort went toward coupling those models for defect behavior and composition evolution to the performance of multicrystalline CIGS solar cells via prediction of doping level and recombination lifetime as function of manufacturing process. In the second budget period, the project pivoted to developing a similar system for the CdSeTe system, focused especially on understanding the role of Se/Te alloy concentration. Execution of the project resulted in the successful development of TCAD systems for both CIGS and CdSeTe thin film PV within the Synopsys Sentaurus framework by utilizing the Alagator interface. In the first budget period of the project, we developed quantitative models for the major components of CIGS PV and implemented them within a framework that couples process, optical, and device simulation. From the insights we have gained, we identified novel opportunities for enhancing CIGS solar cell performance and have laid the groundwork to further optimize the layer structure, composition profile, and thermal cycles for substantially improved efficiency and lower manufacturing costs. For the CIGS system, process changes to achieve greater than 1% absolute enhancement in efficiency were identified, but testing of those approaches was stymied by lack of a domestic CIGS manufacturing partner after the closure of Siva Power as well as Miasole. For CdSeTe, a fully capable TCAD system only became ready to apply near the end of the project period, so substantial opportunities remain to apply those models to enhance the leading thin film PV technology.

14 SOLAR ENERGY↗
DOE OSTI2022

Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

Electron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material. The surface transport is particularly interesting; however, it is also susceptible to atomic defects on the surfaces, such as vacancies, impurities, and step edges. Experimental determination of scattering effects of these surface defects requires both nanoscale spatial resolution and the ability to decipher surface transport from bulk transport. Here we directly measure the resistivity of individual surface steps in the surface dominating transport process of topological insulator Bi 2 Te 2 Se. A variable probe-spacing transport spectroscopy with a multiprobe scanning tunneling microscope is used to differentiate the surface conductance from bulk conductance, allowing the identification of a surface dominant transport regime. The technique also reveals a deviation from ideal 2D transport at atomic steps. Then, a multi-probe scanning tunneling potentiometry is employed to visualize the electrochemical potentials across individual step edges. A quantitative analysis of the potential distributions enables us to acquire a resistivity of 0.530 mΩ · cm for the one quintuple-layer atomic step. The result indicates that atomic defects, despite preserving the time-reversal symmetry, can still significantly affect the transport in topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Disentangling High Harmonic Generation from Surface and Bulk States of a Topological Insulator

The discovery of topological phases has introduced a new dimension to materials science. Three-dimensional (3D) topological insulators (TIs) are a remarkable class of matter that is insulating in the bulk while hosting conductive topological surface states (TSSs) with unique charge and spin properties. High-order harmonic generation (HHG) has emerged as a powerful tool to probe condensed matter systems by providing insights into their electronic structure and dynamic behavior. Here, we investigate HHG in the prototype 3D-TI Bi$_2$Se$_3$. We demonstrate that the contributions of bulk and surface states to the harmonic emission can be controlled by tuning the thickness of thin film samples. An ultrathin (6 nm) film substantially enhances HHG from the surface states, while the bulk states dominate HHG in a thicker (50 nm) film. By applying a quasi-static terahertz perturbing field, we disentangle the bulk and surface responses and reveal the significant impact of the surface states' shift vector and Berry curvature on HHG. Our study provides effective methods for isolating the optical responses of TSSs from those of the bulk, which opens the door to resolving an ongoing debate regarding whether it is possible to reliably extract topological signatures in HHG.

Atomic Physics (physics.atom-ph)↗
DOE OSTI2021

Quantile-dependent expressivity of serum C-reactive protein concentrations in family sets

“Quantile-dependent expressivity” occurs when the effect size of a genetic variant depends upon whether the phenotype (e.g., C-reactive protein, CRP) is high or low relative to its distribution. We have previously shown that the heritabilities ( h 2 ) of coffee and alcohol consumption, postprandial lipemia, lipoproteins, leptin, adiponectin, adiposity, and pulmonary function are quantile-specific. Whether CRP heritability is quantile-specific is currently unknown. Methods Serum CRP concentrations from 2,036 sibships and 6,144 offspring-parent pairs were analyzed from the Framingham Heart Study. Quantile-specific heritability from full-sib (β FS , h 2 ={(1 + 8r spouse β FS ) 0.5 - 1}/(2r spouse )) and offspring-parent regression slopes (β OP , h 2 = 2β OP /(1 + r spouse )) were estimated robustly by quantile regression with nonparametric significance determined from 1,000 bootstrap samples. Results Quantile-specific h 2 (±SE) increased with increasing percentiles of the offspring’s age- and sex-adjusted CRP distribution when estimated from β OP ( P trend = 0.0004): 0.02 ± 0.01 at the 10th, 0.04 ± 0.01 at the 25th, 0.10 ± 0.02 at the 50th, 0.20 ± 0.05 at the 75th, and 0.33 ± 0.10 at the 90th percentile, and when estimated from β FS ( P trend = 0.0008): 0.03±0.01 at the 10th, 0.06 ± 0.02 at the 25th, 0.14 ± 0.03 at the 50th, 0.24 ± 0.05 at the 75th, and 0.53 ± 0.21 at the 90th percentile. Conclusion Heritability of serum CRP concentration is quantile-specific, which may explain or contribute to the inflated CRP differences between CRP (rs1130864, rs1205, rs1800947, rs2794521, rs3091244), FGB (rs1800787), IL-6 (rs1800795, rs1800796), IL6R (rs8192284), TNF- α (rs1800629) and APOE genotypes following CABG surgery, stroke, TIA, curative esophagectomy, intensive periodontal therapy, or acute exercise; during acute coronary syndrome or Staphylococcus aureus bacteremia; or in patients with chronic rheumatoid arthritis, diabetes, peripheral arterial disease, ankylosing spondylitis, obesity or inflammatory bowel disease or who smoke.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS2004

Thin-Film Solar Cells on Metal Foil Substrates for Space Power

Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved to realize the benefits of lightweight technologies for solar arrays, such as: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. Once the technology has gained spaceflight certification it should find rapid acceptance in specific satellite markets.

Raffaelle, Ryne P.↗
NASA NTRS2005

Development of CIGS2 Thin Films on Ultralightweight Flexible Large Area Foil Sunstrates

The development of thin film solar cells is aimed at reducing the costs for photovoltaic systems. Use of thin film technology and thin foil substrate such as 5-mil thick stainless steel foil or 1-mil thick Ti would result in considerable costs savings. Another important aspect is manufacturing cost. Current single crystal technology for space power can cost more than $ 300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn1-xGaxS2 (CIGS2), CuIn(1-x)Ga(x)Se(2-y)S(y) (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite for example, the array manufacturing cost alone may exceed $ 2 million. Moving to thin film technology could reduce this expense to less than $ 500K. Earlier publications have demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6 in x 4 in) substrates. This paper presents the developmental study of achieving stress free Mo coating; uniform coatings of Mo back contact and metallic precursors. The paper also presents the development of sol gel process, refurbishment of selenization/sulfurization furnace, chemical bath deposition (CBD) for n-type CdS and scrubber for detoxification of H2S and H2Se gases.

Dhere, Neelkanth G.↗
NASA NTRS2007

Improved Single-Source Precursors for Solar-Cell Absorbers

Improved single-source precursor compounds have been invented for use in spray chemical vapor deposition (spray CVD) of chalcopyrite semiconductor absorber layers of thin-film cells. A "single-source precursor compound" is a single molecular compound that contains all the required elements, which when used under the spray CVD conditions, thermally decomposes to form CuIn(x)Ga(1-x)S(y)Se(2-y).

Banger, Kulbinder K.↗
DOE OSTI2020

Two-electron redox active molecules with high capacity and energy density for energy storage applications

A non-aqueous redox flow battery includes a catholyte including a compound of formula (I): wherein E1 and E2 are independently O, S, S═O, S(═O)2, Se, NR11, or PR11; The compounds of the present technology are capable of undergoing a reversible two-electron transfer process, thus leading to high efficiency of molecular design and an increase in the overall energy density.

Huang, Jinhua↗
DOE OSTI2022

Methods of exfoliating single crystal materials

Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics. Also disclosed herein are methods for growing GaAs (111) on layered-2D Bi 2 Se 3 (0001) substrates in an MOCVD reactor.

Norman, Andrew Gordon↗