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Circuit proposed to recover energy usually lost in charging and discharging internal gate capacitance of field-effect transistor during high-frequency switching. Scheme includes pulse-forming circuit generating rectangular waveform with zero-level notches near beginning and end of "on" period. Inductor resonates internal gate capacitance so energy recovered during notches.
Significant advances in SIS receiver technology since the last Asilomar meeting include: superconductor materials, integrated inductive tuning elements, and planar mounting structures. The effect of these advances is to push the upper frequency operating limit from about 600 to 1500 GHz, and to enhance the feasibility of focal plane arrays of heterodyne receivers. A fundamental high frequency operating limit of SIS mixers is set by the superconducting energy gap. A practical limitation for high frequency operation of SIS junctions is their parasitic capacitance and resistance. The performance of the mixer will be degraded by the Resistor-Capacitor rolloff. Several designs were reported for inductive elements integrated on the same substrate as the SIS junctions to tune out the bulk junction capacitance. Most millimeter SIS-based heterodyne receivers have used waveguide coupling structures. Technology has advanced to the state where programs that have a high probability of success can be defined to produce arrays of SIS receivers for frequencies as high as 1500 GHz.
Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.
Resting plasma volumes, and arterial and central venous pressures (CVP) were measured in 16 men before and after exercise training to determine if training-induced hypervolemia could be explained by a change in total vascular capacitance. In addition, resting levels of plasma vasopressin (AVP), atrial natriuretic peptide (ANP), aldosterone (ALD), and norepinephrine (NE) were measured before and after training. The same measurements of vacular volume, pressures, and plasma hormones were measured in 8 subjects who did not undergo exercise and acted as controls. The exercise training program consisted of 10 weeks of controlled cycle exercise for 30 min/d, 4 d/wk at 75 to 80 percent of maximal oxygen uptake (VO2max). A training effect was verified by a 20 percent increase in VO2max, a resting bradycardia, and a 370 ml (9 percent) increase in blood volume. Mean arterial blood pressure was unaltered by exercise training, but resting CVP increased. The percent change in blood volume from before to after training was linearly related to the percent change in CVP. As a consequence of elevations in both blood volume and CVP, the volume-to-pressure ratio was essentially unchanged following exercise training. Plasma AVP, ANP, ALD, and NE were unaltered. Results indicate that elevated CVP is a consequence of training-induced hypervolemia without alteration in total effective venous capacitance. This may represent a resetting of the pressure-volume stimulus-response relation for regulation of blood volume.
A timing sampler consisting of 14 four-stage inverter-pair chains with different load capacitances was fabricated in 1.6-micron n-well CMOS and irradiated with cobalt-60 at 10 rad(Si)/s. For this CMOS process the measured results indicate that the rising delay increases by about 2.2 ns/Mrad(Si) and the falling delay increase is very small, i.e., less than 300 ps/Mrad(Si). The amount of radiation-induced delay depends on the size of the load capacitance. The maximum value observed for this effect was 5.65 ns/pF-Mrad(Si). Using a sensitivity analysis, the sensitivity of the rising delay to radiation can be explained by a simple timing model and the radiation sensitivity of dc MOSFET parameters. This same approach could not explain the insensitivity of the falling delay to radiation. This may be due to a failure of the timing model and/or trapping effects.
The exchange current, transfer coefficient, mass-transport parameters, and electrode capacitance at the Na(g)/porous Mo/Na-Beta-double prime alumina solid electrolyte (BASE) phase boundary have been evaluated from 740 to 1220 K. The transfer coefficient exhibits a value close to 0.5 and the exchange current is dominated by collision frequency, with no significant activation energy. Since the porous Mp-electrode adopts a fairly regular microstructure on the BASE surface, the magnitude of the exchange current of mature electrodes directly depends on the actual contact zone of the porous metal film with the BASE ceramic, and decreases slightly as grain growth occurs. The exchange currents and the mass-transport parameters derived for very porous, thin Mo electrodes indicate that the charge-transfer reaction occurs at a small fraction of the interface. High-frequency limiting capacitance and resistance values due to the interface show potential dependence and a value on the order of 1 F/sq m and 0.1-1.0 Ohm-sq cm.
Results are reported from an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard single-event-upset-resistant 4 x 256 memory chip. This device is being used by the Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.
Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).
Interpretation of planetary observations and proper modeling of planetary atmospheres are critically upon accurate laboratory data for the chemical and physical properties of the constitutes of the atmospheres. It is important that these data are taken over the appropriate range of parameters such as temperature, pressure, and composition. Availability of accurate, laboratory data for vapor pressures and equilibrium constants of condensed species at low temperatures is essential for photochemical and cloud models of the atmospheres of the outer planets. In the absence of such data, modelers have no choice but to assume values based on an educated guess. In those cases where higher temperature data are available, a standard procedure is to extrapolate these points to the lower temperatures using the Clausius-Clapeyron equation. Last summer the vapor pressures of acetylene (C2H2) hydrogen cyanide (HCN), and cyanoacetylene (HC3N) was measured using two different methods. At the higher temperatures 1 torr and 10 torr capacitance manometers were used. To measure very low pressures, a technique was used which is based on the infrared absorption of thin film (TFIR). This summer the vapor pressure of acetylene was measured the TFIR method. The vapor pressure of hydrogen sulfide (H2S) was measured using capacitance manometers. Results for H2O agree with literature data over the common range of temperature. At the lower temperatures the data lie slightly below the values predicted by extrapolation of the Clausius-Clapeyron equation. Thin film infrared (TFIR) data for acetylene lie significantly below the values predicted by extrapolation. It is hoped to bridge the gap between the low end of the CM data and the upper end of the TFIR data in the future using a new spinning rotor gauge.
Small-area (1x1 sq micron) high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high frequency mixers were fabricated. These junctions are integrated with superconducting microstrip lines designed to resonate out the large junction capacitance. The mixer gain and noise performance were studied near 205 GHz as a function of the inductance provided by the microstrip. This has yielded values of junction capacitance of 85 fF/sq microns and magnetic penetration depth of 3800 angstroms. Mixer noise as low as 133 K has been obtained for properly tuned junctions. This is the best noise performance ever reported for an NbN SIS mixer.
Available planar diodes for space-based applications at submillimeter wavelengths have not achieved either the required low junction capacitance or the low series resistance-junction capacitance product. Here, the development of a novel planar diode structure that overcomes both of these difficulties is outlined. The characteristics of these Schottky barrier mixer diodes are presented and electron micrographs are shown. The diode structure will allow planar technology to be extended throughout the submillimeter wavelength range.
Small area (less than 1 sq micron), high-current-density NbN/MgO/NbN tunnel junctions with I-V characteristics suitable for high-frequency mixers have been fabricated. Mesa-geometry junctions with an area of about 1 sq micron and critical current density of 5-10 kA/sq cm are integrated with superconducting microstrip lines designed to resonate out the junction capacitance. A study was made of the mixer gain and noise performance near 205 GHz as a function of the inductance provided by the microstrip line. This has confirmed, at a high millimeter-wave frequency, values of junction capacitance of 85 fF/sq micron and recently measured values of a magnetic penetration depth of 380 nm. Mixer noise temperatures as low as 134 K at 1.5 K have been obtained for properly tuned junctions. A significant improvement in mixer performance on cooling from 4.2 K to 1.5 K was observed. Edge-geometry junctions with an area of 0.3 sq microns and critical current density of 18-25 kA/sq cm have also been fabricated. These junctions give a mixer noise temperature of 145 K at 4.2 K without the use of integrated tuning elements. These are the best results ever achieved for NbN-based SIS mixers.
Properties of NbN films and NbN/MgO/NbN tunnel junctions are discussed. NbN junctions are being developed for use in high-frequency, SIS quasiparticle mixers. To properly design mixer circuits, junction and film properties need to be characterized. The specific capacitance of NbN/MgO/NbN junctions has been measured as a function of the product of the normal-state resistance and the junction area (RnA), and it is found to vary by more than a factor of two (35-85 fF/sq microns) over the range of RnA measured (1000-50 ohm sq microns). This variation is important because the specific capacitance determines the RC speed of the tunnel junction at a given RnA value. The magnetic penetration depth of NbN films deposited under different conditions is also measured. The magnetic penetration depth affects the design of microstrip line used in RF tuning circuits. Control of the magnetic penetration depth is necessary to fabricate reproducible tuning circuits. Additionally, the critical current uniformity for arrays of 100 junctions has been measured. Junction uniformity will affect the design of focal-plane arrays of SIS mixers. Finally, the relevance of these measurements to the design of Josephson electronics is discussed.
The 3rd-order analysis of Perry and Morrison (1971) was extended to 7th-order by Watmuff (1987) by including both the bridge-capacitance and the frequency-response characteristics of the feedback amplifier. In this paper, the bridge capacitance has been excluded from the analysis. The influence of the gain K, roll-off frequency f(A), and offset voltage E(qi) of the feedback amplifier are examined in more detail together with their interactions with the bridge inductance.
Barrier/n/n+ (BNN+) varactor diodes developed as frequency multipliers at millimeter and submillimeter wavelengths. Devices required to serve as frequency triplers or quintuplers to provide powers of order of milliwatts at frequencies from 0.1 THz to about 1 THz. Feature Mott or heterojunction barriers and back-to-back diode configuration, which make it possible to obtain symmetrical capacitance-versus-voltage characteristics with high ratio between maximum and minimum capacitances. Extension of barrier/intrinsic/n+ (BIN+) concept described in "BIN Diode for Submillimeter Wavelengths" (NPO-17258).
Sensor based robot motion planning research has primarily focused on mobile robots. Consider, however, the case of a robot manipulator expected to operate autonomously in a dynamic environment where unexpected collisions can occur with many parts of the robot. Only a sensor based system capable of generating collision free paths would be acceptable in such situations. Recently, work in this area has been reported in which a deterministic solution for 2DOF systems has been generated. The arm was sensitized with 'skin' of infra-red sensors. We have proposed a heuristic (potential field based) methodology for redundant robots with large DOF's. The key concepts are solving the path planning problem by cooperating global and local planning modules, the use of complete information from the sensors and partial (but appropriate) information from a world model, representation of objects with hyper-ellipsoids in the world model, and the use of variational planning. We intend to sensitize the robot arm with a 'skin' of capacitive proximity sensors. These sensors were developed at NASA, and are exceptionally suited for the space application. In the first part of the report, we discuss the development and modeling of the capacitive proximity sensor. In the second part we discuss the motion planning algorithm.
Spacecraft with a thin dielectric coating on the outer surface of the structure which are biased (-200 V) negative relative to the atmospheric plasma are susceptible to dielectric breakdown. This paper will present experimental tests designed to measure the electron current flow from the structure through the plasma during the arc. The current path was examined in three parts: the electrons supplied through the structure and the arc to the outer structure, the expansion of the arc into the ambient plasma, and the return current through the ambient plasma. The measured electron current either flowing from the plasma or supplied to the plasma by the arc in each case was compared to the random thermal electron current which could be collected. The results of the tests show a spacecraft is capable of supporting arcs with peak currents greater than thermal electron currents, and these currents will be dependent upon the amount of stored charge in the structure (i.e., the structure's surface area and dielectric thickness). Also, the results of these tests show that it is possible for structures with a self capacitance of 10 microFarads to see peak currents of 90 A and structures with 1000 microFarads (i.e., capacitance of one Space Station Freedom module) to produce peak currents of 1000 A.
A capacitive proximity/tactile sensor with unique performance capabilities ('capaciflector' or capacitive reflector) is being developed by NASA/Goddard Space Flight Center (GSFC) for use on robots and payloads in space in the interests of safety, efficiency, and ease of operation. Specifically, this sensor will permit robots and their attached payloads to avoid collisions in space with humans and other objects and to dock these payloads in a cluttered environment. The sensor is simple, robust, and inexpensive to manufacture with obvious and recognized commercial possibilities. Accordingly, NASA/GSFC, in conjunction with industry, is embarking on an effort to 'spin' this technology off into the private sector. This effort includes prototypes aimed at commercial applications. The principles of operation of these prototypes are described along with hardware, software, modelling, and test results. The hardware description includes both the physical sensor in terms of a flexible printed circuit board and the electronic circuitry. The software description will include filtering and detection techniques. The modelling will involve finite element electric field analysis and will underline techniques used for design optimization.