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NASA NTRS1998

Study Methods to Characterize and Implement Thermography Nondestructive Evaluation (NDE)

The limits and conditions under which an infrared thermographic nondestructive evaluation can be utilized to assess the quality of aerospace hardware is demonstrated in this research effort. The primary focus of this work is on applying thermography to the inspection of advanced composite structures such as would be found in the International Space Station Instrumentation Racks, Space Shuttle Cargo Bay Doors, Bantam RP-1 tank or RSRM Nose Cone. Here, the detection of delamination, disbond, inclusion and porosity type defects are of primary interest. In addition to composites, an extensive research effort has been initiated to determine how well a thermographic evaluation can detect leaks and disbonds in pressurized metallic systems "i.e. the Space Shuttle Main Engine Nozzles". In either case, research into developing practical inspection procedures was conducted and thermographic inspections were performed on a myriad of test samples, subscale demonstration articles and "simulated" flight hardware. All test samples were fabricated as close to their respective structural counterparts as possible except with intentional defects for NDE qualification. As an added benefit of this effort to create simulated defects, methods were devised for defect fabrication that may be useful in future NDE qualification ventures.

Walker, James L.↗

NASA NTRS1994

Electrochemical Characterization of InP and GaAs Based Structures for Space Solar Cell Applications.

In this paper the emphasis is on accurate majority carrier concentration EC-V profiling of structures based on Indium Phosphide and Gallium Arsenide, using a newly developed electrolyte based on Hydrogen Flouride, Acetic Acid, Phosphoric Acid, 1-phenyl-2-propanamine and Ammonia Diflouride. Some preliminary data on the use of this electrolyte for determining the energy distribution of surface and deep states of these structures, applicable to fabrication process optimization and radiation induced defects studies of solar cells, are also provided.

Faur, Maria↗

NASA NTRS2002

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0<x<0.4). Energy band gaps at room temperature were determined from optical transmission measurements and a best fit curve to the band gap vs. composition, x, data gives a bowing parameter of 1.45. Low-temperature photoluminescence (PL) spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for the ZnSe(1-x),Te(x), samples, 0.09<x<0.39. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples. To validate numerical codes, in-situ monitoring during the PVT of HgI2 was designed. Optical absorption spectra of the vapor phase over HgI2 were measured for wavelengths between 200 and 600nm at sample temperatures between 349 and 610K. The Beer's Law constants for 15 wavelengths between 200 and 440 nm were determined. From these constants the vapor pressure of HgI2 was established as a function of temperature for the liquid and the solid Beta-phases To characterize the growth conditions during the PVT growth of In-doped ZnSe the optical absorbance of the vapor phase over the In-Se system were measured and were used to obtain the partial pressures of Se2(g) and In2Se(g).

Su, Ching-Hua↗

NASA NTRS2003

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Su, Ching-Hua↗

NASA NTRS2021

Phase Diagram, Melt Growth and Characterization of Cd0.8Zn0.2Te Crystals for X-Ray Detector

In this study, the solidus curve of the Cd0.8Zn0.2Te homogeneity range was constructed from the partial pressure measurements by optical absorption technique which provided the information of the melt growth parameters to process crystals with the required electrical resistivity. The melt growth of Cd0.8Zn0.2Te crystals were then processed by directional solidification under controlled Cd overpressure. During the growth experiments, several procedures have been developed to improve the crystalline quality: (1) minimizing the contamination of impurities (2) improving the structural defects and (3) minimizing the Te-precipitates within the grown crystals to enhance charge transport properties. Additionally, the thermal conductivity, electrical conductivity, and Seebeck coefficient of a vapor-grown CdTe and two melt-grown Cd0.8Zn0.2Te crystals were measured between 190oC and 780oC to provide an in-depth understanding of the thermal and electrical conduction mechanisms of the crystals as well as the prospect of its thermoelectric applications.

x-ray detector↗

NASA NTRS1985

Crystal growth of device quality GaAs in space

The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

Gatos, H. C.↗

NASA NTRS2017

Microstructural Constraints on the Formation History of Hibonite in Refractory Inclusions

Hibonite is a primary refractory phase occurring in many Ca-Al-rich inclusions (CAIs), typically with spinel and perovskite [1]. Previous mi-crostructural studies of hibonite in CAIs revealed the presence of numerous stacking defects along the (001) plane and correlated non-stoichiometry in hibonite [2,3]. These features are interpreted as complex inter-growths of stoichiometric and Ca-deficient hibonites, as shown by experimental studies of reaction-sintered CaO-Al2O3 compounds [4]. Here, we extend our transmission electron microscope (TEM) studies to hibonite-bearing CAIs in CM chondrites that have been well characterized isotopically [5-7]. In addition, we have undertaken a series of anneal-ing experiments to explore the effect of minor elements (Mg and Ti) on the microstucure of hibonite [8,9,this study]. The results of these experiments are being applied to hibonite in CAIs in order to better understand its formation conditions.

Han, J.↗

NASA NTRS2017

Hydrogen in Martian Meteorites

Most volatile studies of Mars have targeted its surface via spacecraft and rover data, and have evidenced surficial water in polar caps and the atmosphere, in the presence of river channels, and in the detection of water bearing minerals. The other focus of Martian volatile studies has been on Martian meteorites which are all from its crust. Most of these studies are on hydrous phases like apatite, a late-stage phase, i.e. crystallizing near the end of the differentiation sequence of Martian basalts and cumulates. Moreover, calculating the water content of the magma a phosphate crystallized from is not always possible, and yet is an essential step to estimate how much water was present in a parent magma and its source. Water, however, is primarily dissolved in the interiors of differentiated planets as hydrogen in lattice defects of nominally anhydrous minerals (olivine, pyroxene, feldspar) of the crust and mantle. This hydrogen has tremendous influence, even in trace quantities, on a planet's formation, geodynamics, cooling history and the origin of its volcanism and atmosphere as well as its potential for life. Studies of hydrogen in nominally anhydrous phases of Martian meteorites are rare. Measuring water contents and hydrogen isotopes in well-characterized nominally anhydrous minerals of Martian meteorites is the goal of our study. Our work aims at deciphering what influences the distribution and origin of hydrogen in Martian minerals, such as source, differentiation, degassing and shock.

Peslier, A. H.↗

NASA NTRS2002

The Arabidopsis SKU5 gene encodes an extracellular glycosyl phosphatidylinositol-anchored glycoprotein involved in directional root growth

To investigate how roots respond to directional cues, we characterized a T-DNA-tagged Arabidopsis mutant named sku5 in which the roots skewed and looped away from the normal downward direction of growth on inclined agar surfaces. sku5 roots and etiolated hypocotyls were slightly shorter than normal and exhibited a counterclockwise (left-handed) axial rotation bias. The surface-dependent skewing phenotype disappeared when the roots penetrated the agar surface, but the axial rotation defect persisted, revealing that these two directional growth processes are separable. The SKU5 gene belongs to a 19-member gene family designated SKS (SKU5 Similar) that is related structurally to the multiple-copper oxidases ascorbate oxidase and laccase. However, the SKS proteins lack several of the conserved copper binding motifs characteristic of copper oxidases, and no enzymatic function could be assigned to the SKU5 protein. Analysis of plants expressing SKU5 reporter constructs and protein gel blot analysis showed that SKU5 was expressed most strongly in expanding tissues. SKU5 was glycosylated and modified by glycosyl phosphatidylinositol and localized to both the plasma membrane and the cell wall. Our observations suggest that SKU5 affects two directional growth processes, possibly by participating in cell wall expansion.

NASA Discipline Plant Biology↗

NASA NTRS1987

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Lin, T. L.↗

NASA NTRS1993

Performance of resin transfer molded multiaxial warp knit composites

Composite materials that are subjected to complex loads have traditionally been fabricated with multidirectionally oriented prepreg tape materials. Some of the problems associated with this type of construction include low delamination resistance, poor out-of-plane strength, and labor intensive fabrication processes. Textile reinforced composites with through-the-thickness reinforcement have the potential to solve some of these problems. Recently, a relatively new class of noncrimp fabrics designated as multiaxial warp knits have been developed to minimize some of the high cost and damage tolerance concerns. Multiple stacks of warp knit fabrics can be knitted or stitched together to reduce layup labor cost. The through-the-thickness reinforcement can provide significant improvements in damage tolerance and out-of-plane strength. Multilayer knitted/stitched preforms, in conjunction with resin transfer molding (RTM), offer potential for significant cost savings in fabrication of primary aircraft structures. The objectives of this investigation were to conduct RTM processing studies and to characterize the mechanical behavior of composites reinforced with three multiaxial warp knit fabrics. The three fabrics investigated were produced by Hexcel and Milliken in the United States, and Saerbeck in Germany. Two resin systems, British Petroleum E9O5L and 3M PR 500, were characterized for RTM processing. The performance of Hexcel and Milliken quasi-isotropic knitted fabrics are compared to conventional prepreg tape laminates. The performance of the Saerbeck fabric is compared to uniweave wing skin layups being investigated by Douglas Aircraft Company in the NASA Advanced Composites Technology (ACT) program. Tests conducted include tension, open hole tension, compression, open hole compression, and compression after impact. The effects of fabric defects, such as misaligned fibers and gaps between tows, on material performance are also discussed. Estimated material and labor cost savings are projected for the Saerbeck fabric as compared to uniweave fabric currently being used by Douglas in the NASA ACT wing development program.

Dexter, H. Benson↗

NASA NTRS1984

A High-speed Characterization Technique for Solar Silicon

High-speed crystal growth techniques demand high-speed characterization techniques to allow a timely feed-back of information to the crystal growers. The unique properties of the Si electrolyte-contact (SEC) provide for an extremely fast and simple measurement of the light-induced photo-current for any piece of Si without lengthy preparation of the specimen. Electropolishing at high anodic current densities allows for insitu generation of fresh surfaces whereas preferential etching of defects in various modes is possible at low current densities. In n-type Si a simple estimation of the minority-carrier diffusion length is possible in many cases. Laser-scanning enables local probing of the photocurrent and provides data about the homogeneity of a sample. The experimental realization of the method is described in detail and examples are given and discussed.

Lehmann, V.↗

NASA NTRS1982

On the behaviour and origin of the major deep level (EL2) in GaAs

In an extensive crystal growth and characterization study of Bridgman-grown GaAs it was established that the following factors affect the concentration of the EL2 level: (1) the As pressure during growth; (2) the partial pressure of Ga2O; (3) the concentration of shallow donors and acceptors; and (4) the post-growth cooling cycle. The role of these factors is qualitatively and quantitatively explained by attributing the 0.82 eV donor state to the antisite defect As-sub-Ga formed as a result of Ga-vacancy migration during the post-growth cooling of the crystals.

Lagowski, J.↗

NASA NTRS1993

An investigation of squeeze-cast alloy 718

Alloy 718 billets produced by the squeeze-cast process have been evaluated for use as potential replacements for propulsion engine components which are normally produced from forgings. Alloy 718 billets were produced using various processing conditions. Structural characterizations were performed on 'as-cast' billets. As-cast billets were then homogenized and solution treated and aged according to conventional heat-treatment practices for this alloy. Mechanical property evaluations were performed on heat-treated billets. As-cast macrostructures and microstructures varied with squeeze-cast processing parameters. Mechanical properties varied with squeeze-cast processing parameters and heat treatments. One billet exhibited a defect free, refined microstructure, with mechanical properties approaching those of wrought alloy 718 bar, confirming the feasibility of squeeze-casting alloy 718. However, further process optimization is required, and further structural and mechanical property improvements are expected with process optimization.

Gamwell, W. R.↗

NASA NTRS2012

Tools Ensure Reliability of Critical Software

In November 2006, after attempting to make a routine maneuver, NASA's Mars Global Surveyor (MGS) reported unexpected errors. The onboard software switched to backup resources, and a 2-day lapse in communication took place between the spacecraft and Earth. When a signal was finally received, it indicated that MGS had entered safe mode, a state of restricted activity in which the computer awaits instructions from Earth. After more than 9 years of successful operation gathering data and snapping pictures of Mars to characterize the planet's land and weather communication between MGS and Earth suddenly stopped. Months later, a report from NASA's internal review board found the spacecraft's battery failed due to an unfortunate sequence of events. Updates to the spacecraft's software, which had taken place months earlier, were written to the wrong memory address in the spacecraft's computer. In short, the mission ended because of a software defect. Over the last decade, spacecraft have become increasingly reliant on software to carry out mission operations. In fact, the next mission to Mars, the Mars Science Laboratory, will rely on more software than all earlier missions to Mars combined. According to Gerard Holzmann, manager at the Laboratory for Reliable Software (LaRS) at NASA's Jet Propulsion Laboratory (JPL), even the fault protection systems on a spacecraft are mostly software-based. For reasons like these, well-functioning software is critical for NASA. In the same year as the failure of MGS, Holzmann presented a new approach to critical software development to help reduce risk and provide consistency. He proposed The Power of 10: Rules for Developing Safety-Critical Code, which is a small set of rules that can easily be remembered, clearly relate to risk, and allow compliance to be verified. The reaction at JPL was positive, and developers in the private sector embraced Holzmann's ideas.

Source record↗

NASA NTRS1978

Characterization of the effects of metallic impurities on silicon solar cell performance

The effects of controlled concentrations of secondary impurities (Al, C, Ca, Cr, Cu, Fe, Mg, Mn, Mo, Ta, Ti, V, Zn, and Zr), incorporated alone or in combinations into Czochralski and float zone crystals, on the performance of silicon solar cells were investigated. Impurity concentrations ranged from 10 to the 11th to 10 to the 17th/cu cm. Solar cells were fabricated by a conventional diffusion process and characterized by computer reduction of current-voltage data. The data suggest that performance loss primarily results from reduction of the base diffusion length. On the basis of this assumption, a first order analytic model which predicts cell performance as a function of impurity concentrations is developed. Calculated performance parameters are in good agreement with observation, except for some impurities, such as Fe, Cu and Ni, which degrade cells via recombination and defects in the junction space-charge region. N-base devices are less affected by impurities, although degradation mechanisms appear to be the same as in p-devices. There seems to be very limited interaction between impurities in multiply-doped cells.

Davis, J. R.↗

NASA NTRS1993

Thermophysical property sensitivity effects in steel solidification

The simulation of advanced solidification processes via digital computer techniques has gained widespread acceptance during the last decade or so. Models today can predict transient temperature fields, fluid flow fields, important microstructural parameters, and potential defects in castings. However, the lack of accurate thermophysical property data on important industrial alloys threatens to limit the ability of manufacturers to fully capitalize on the technology's benefits. A study of the sensitivity of one such numerical model of a steel plate casting to imposed variations in the data utilized for the thermal conductivity, specific heat, density, and heat of fusion is described. The sensitivity of the data's variability is characterized by its effects on the net solidification time of various points along the centerline of the plate casting. Recommendations for property measurements are given and the implications of data uncertainty for modelers are discussed.

Overfelt, Tony↗

NASA NTRS2004

Detached Growth of Germanium by Directional Solidification

Detached crystal growth technique (dewetting) offers improvement in the quality of the grown crystals by preventing sticking to the walls of the crucible and thus reducing the possibility of parasitic nucleation and formation of lattice defects upon cooling. One of the factors relevant for the phenomena is the pressure differential across the meniscus at the crystal-melt interface. We investigated this effect experimentally. The growth took place in closed ampoules under the pressure of an inert gas (forming gas: 96% Ar + 4% H2). The pressure above the melt was adjustable and allowed for a control of the pressure difference between the top and bottom menisci. The crystals were characterized, particularly by taking profilometer measurements along the grown crystals surface. The effects of the experimental conditions on the detachment were compared with those predicted based on the theory of Duffar et al.

Palosz, W.↗