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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20

Impact of device level faults in a digital avionic processor

This study describes an experimental analysis of the impact of gate and device-level faults in the processor of a Bendix BDX-930 flight control system. Via mixed mode simulation, faults were injected at the gate (stuck-at) and at the transistor levels and, their propagation through the chip to the output pins was measured. The results show that there is little correspondence between a stuck-at and a device-level fault model, as far as error activity or detection within a functional unit is concerned. In so far as error activity outside the injected unit and at the output pins are concerned, the stuck-at and device models track each other. The stuck-at model, however, overestimates, by over 100 percent, the probability of fault propagation to the output pins. An evaluation of the Mean Error Durations and the Mean Time Between Errors at the output pins shows that the stuck-at model significantly underestimates (by 62 percent) the impact of an internal chip fault on the output pins. Finally, the study also quantifies the impact of device fault by location, both internally and at the output pins.

Suk, Ho Kim↗

Computational and experimental studies of LEBUs at high device Reynolds numbers

The present paper summarizes computational and experimental studies for large-eddy breakup devices (LEBUs). LEBU optimization (using a computational approach considering compressibility, Reynolds number, and the unsteadiness of the flow) and experiments with LEBUs at high Reynolds numbers in flight are discussed. The measurements include streamwise as well as spanwise distributions of local skin friction. The unsteady flows around the LEBU devices and far downstream are characterized by strain-gage measurements on the devices and hot-wire readings downstream. Computations are made with available time-averaged and quasi-stationary techniques to find suitable device profiles with minimum drag.

Bertelrud, Arild↗

Integrated fountain effect pump device for fluid management at low gravity

A new device for fluid management at low gravity is described. The system is basically the same as the enclosed capillary device using screens, in which the screens along the gallery channels are replaced by porous plugs which are responsible for both the fluid retention and pumping of He II; in this device, no downstream pump is needed. The plugs in contact with liquid He on both sides act as a fountain-effect pumps (FEPs), while plugs exposed to vapor on one side behave as vapor-liquid phase separators (VLPSs). The total net rate of He II transfer into the receiving tank equals the mass flow rate through the FEP plugs minus the liquid loss from the VLPS plugs. The results of the performance analysis of this integrated FEP device are presented together with its schematic diagram.

Yuan, S. W. K.↗

Enclosed capillary device for low gravity management of He II

To transfer He II in space, a large tank must be drained at low gravity. This paper describes and analyzes an enclosed gallery device designed for collecting and delivering He II to a pump. The device allows most of the liquid to move about in the tank while it maintains a liquid flow to the pump. Only the liquid in the screen-covered gallery channels and in the upper and lower receivers is contained. The device operates by providing surface tension dominated liquid paths from all locations within the tank to the lower receiver, which houses the pump. Since the fluid pressure in the channels may be below the saturated vapor pressure, an analysis of He II cavitation is performed to determine if cavitation will occur. The effect of heat dissipation from the pump is examined to determine if it may result in nucleation of boiling. It is concluded that this enclosed device can meet the requirements for transfer of He II under the predicted adverse accelerations that will be encountered on-orbit.

Frank, D. J.↗

Theoretical and material studies of thin-film electroluminescent devices

Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

Summers, C. J.↗

Radiation sensitive area detection device and method

A radiation sensitive area detection device for use in conjunction with an X ray, ultraviolet or other radiation source is provided which comprises a phosphor containing film which releases a stored diffraction pattern image in response to incoming light or other electromagnetic wave. A light source such as a helium-neon laser, an optical fiber capable of directing light from the laser source onto the phosphor film and also capable of channelling the fluoresced light from the phosphor film to an integrating sphere which directs the light to a signal processing means including a light receiving means such as a photomultiplier tube. The signal processing means allows translation of the fluoresced light in order to detect the original pattern caused by the diffraction of the radiation by the original sample. The optical fiber is retained directly in front of the phosphor screen by a thin metal holder which moves up and down across the phosphor screen and which features a replaceable pinhole which allows easy adjustment of the resolution of the light projected onto the phosphor film. The device produces near real time images with high spatial resolution and without the distortion that accompanies prior art devices employing photomultiplier tubes. A method is also provided for carrying out radiation area detection using the device of the invention.

Carter, Daniel C.↗

Tunnel transit-time (TUNNETT) devices for terahertz sources

The potential and capabilities of tunnel transit-time (TUNNETT) devices for power generation in the 100-1000 GHz range are presented. The basic properties of these devices and the important material parameters which determine their properties are discussed and criteria for designing such devices are presented. It is shown from a first-order model that significant amounts of power can be obtained from these devices in the terahertz frequency range.

Haddad, G. I.↗

All a-axis oriented YBa2Cu3O(7-y) - PrBa2Cu3O(7-z) - YBa2Cu3O(7-y) Josephson devices operating at 80 K

The controllable, reproducible fabrication of nonhysteretic Josephson devices with excess-current weak-link characteristics at temperatures up to 80 K have been demonstrated. The devices are patterned from in situ deposited a-axis oriented YBa2Cu3O(7-y) - PrBa2Cu3O(7-y) - YBa2Cu3O(7-y) trilayers grown on SrTiO3(001) substrates. Control of the critical current density and resistance is achieved by varying the thickness of the PrBa2Cu3O(7-z) barrier layer. Critical current densities in excess of 10,000 A/sq cm have been reproducibly measured; good uniformity across the wafer is obtained with device parameters scaling with device area. Strong constant-voltage current steps are observed under 11.2 GHz microwave radiation at temperatures up to and above 80 K.

Barner, J. B.↗

An overview of silicon carbide device technology

Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.

Neudeck, Philip G.↗

Development of A Non-Explosive Release Device for Aerospace Applications

A simple, non-explosive, high load-capacity release mechanism using shape memory alloy is currently being developed for space flight. This device, the Frangibolt, could replace most pyrotechnic devices in applications where the need for safety, reliability, non-destructive testing, and minimal mechanical shock is more crucial than the need for rapid actuation. Prototype hardware has been designed, tested, and proven in laboratory conditions. Operation and demonstration of these devices evidenced reliable and repeatable performance, clearly indicating that extensive testing for flight qualification is warranted. Here, the Frangibolt design is discussed, recent test results of laboratory units are described, and the work that must be performed in the upcoming months to qualify the device for aerospace applications is addressed.

John D Busch↗

Laboratory evaluation of two advanced suspension devices for ground vibration testing of large space structures

In order to provide the advanced suspension technology needed to allow ground test measurement of free-body modal parameters, two advanced suspension devices, one passive, the other active, are evaluated on the basis of laboratory testing of each device type with rigid and flexible payloads. Rigid-body tests show the basic behavior of the devices when they are uncoupled from a test article near their bandwidth. Flexible body tests show how suspension device dynamics couple with the dynamics of a representative large space structure. For the flexible body testing, targets for the free-body modal parameters are developed from test-verified analysis of the representative structure suspended in an orientation which is only mildly sensitive to suspension constraints.

Cooley, Victor M.↗

Development of exercise devices to minimize musculoskeletal and cardiovascular deconditioning in microgravity

The paper describes three exercise devices, developed at the NASA-Ames Research Center, for maintaining musculoskeletal and cardiovascular fitness in astronauts during extended space flights. These devices represent the following exercise concepts: (1) exercise against LBNP, (2) instrumented dynamic interlimb resistance, and (3) multiple resistive exercise. The three devices complement each other to provide the aerobic and strength training exercises for different situations. All three devices permit eccentric, concentric, and isometric contractions for a variety of exercises.

Schwandt, Douglas F.↗

Sandwich-Geometry YBa(2)Cu(3)O(7-delta)/Au/Nb SNS Devices

Superconductor/normal-conductor/superconductor (SNS) devices in which electronically active layers consist of high-temperature superconductor YBa(2)Cu(3)O(7-delta), normal conductor Au, and conventional superconductor Nb, fabricated in sandwich geometry. Devices and processes by which fabricated are part of continuing effort to develop SNS microbridges for use in superconducting quantum interference devices (SQUIDS's) or as mixers or local oscillators operating at frequencies of hundreds of gigahertz. Results show promise for manufacture of practical devices.

Foote, Marc C.↗

Formal mechanization of device interactions with a process algebra

The principle emphasis is to develop a methodology to formally verify correct synchronization communication of devices in a composed hardware system. Previous system integration efforts have focused on vertical integration of one layer on top of another. This task examines 'horizontal' integration of peer devices. To formally reason about communication, we mechanize a process algebra in the Higher Order Logic (HOL) theorem proving system. Using this formalization we show how four types of device interactions can be represented and verified to behave as specified. The report also describes the specification of a system consisting of an AVM-1 microprocessor and a memory management unit which were verified in previous work. A proof of correct communication is presented, and the extensions to the system specification to add a direct memory device are discussed.

Schubert, E. Thomas↗

Conceptual design of a fleet of autonomous regolith throwing devices for radiation shielding of lunar habitats

The National Aeronautics and Space Administration (NASA) in conjunction with Universities Space Research Association (USRA) has requested that the feasibility of a fleet of regolith tossing devices designed to cover a lunar habitat for radiation protection be demonstrated. The regolith, or lunar soil, protects the lunar habitat and its inhabitants from radiation. Ideally, the device will operate autonomously in the lunar environment. To prove the feasibility of throwing regolith on the Moon, throwing solutions were compared to traditional, Earth-based methods for moving soil. Various throwing configurations were investigated. A linear throwing motion combined with a spring and motor energizing system proved a superior solution. Three different overall configurations for the lunar device are presented. A single configuration is chosen and critical parameters such as operating procedure, system volume, mass, and power are developed. The report is divided into seven main sections. First, the Introduction section gives background information, defines the project requirements and the design criteria, and presents the methodology used for the completion of this design. Next, the Preliminary Analysis section presents background information on characteristics of lunar habitats and the lunar environment. Then, the Alternate Designs section presents alternate solutions to each of the critical functions of the device. Fourth, a detailed analysis of throwing the regolith is done to demonstrate its feasibility. Then, the three overall design configurations are presented. Next, a configuration is selected and the conceptual design is expanded to include system performance characteristics, size, and mass. Finally, the Conclusions and Recommendations for Future Work section evaluates the design, outlines the next step to be taken in the design process, and suggests possible goals for future design work.

Armstrong, Karem↗

Advanced underwater lift device

Flexible underwater lift devices ('lift bags') are used in underwater operations to provide buoyancy to submerged objects. Commercially available designs are heavy, bulky, and awkward to handle, and thus are limited in size and useful lifting capacity. An underwater lift device having less than 20 percent of the bulk and less than 10 percent of the weight of commercially available models was developed. The design features a dual membrane envelope, a nearly homogeneous envelope membrane stress distribution, and a minimum surface-to-volume ratio. A proof-of-concept model of 50 kg capacity was built and tested. Originally designed to provide buoyancy to mock-ups submerged in NASA's weightlessness simulators, the device may have application to water-landed spacecraft which must deploy flotation upon impact, and where launch weight and volume penalties are significant. The device may also be useful for the automated recovery of ocean floor probes or in marine salvage applications.

Flanagan, David T.↗

Observation of radiation induced changes in stress and electrical properties in MOS devices

Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V(ot) and V(it) were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of Delta V(it) and Delta V(ot) taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986, 1987); compressive stress at the silicon/SiO2 interface does reduce radiation damage in the device.

Shaw, D. C.↗

Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

Burns, M. J.↗