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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Development of a Thin-Film Solar Cell Interconnect for the Powersphere Concept

Dual junction amorphous silicon (a-Si) solar cells produced on polyimide substrate have been selected as the best candidate to produce a lightweight solar array for the PowerSphere program. The PowerSphere concept features a space-inflatable, geodetic solar array approximately 0.6 meters in diameter and capable of generating about 20W of electrical power. Trade studies of various wiring concepts and connection methods led to an interconnect design with a copper contact that wraps around the edge, to the back of the solar cell. Applying Plasma Vapor Deposited (PVD) copper film to both sides and the edge of the solar cell produces the wrap around contact. This procedure results in a contact pad on the back of the solar cell, which is then laser welded to a flex circuit material. The flex circuit is constructed of copper in a custom designed routing pattern, and then sandwiched in a Kapton insulation layer. The flex circuit then serves as the primary power distribution system between the solar cells and the spacecraft. Flex circuit material is the best candidate for the wiring harness because it allows for low force deployment of the solar cells by the inflatable hinges on the PowerSphere. An additional frame structure, fabricated and assembled by ILC Dover, will reinforce the wrap around contact-flex blanket connection, thus providing a mechanically robust solar cell interconnect for the PowerSphere multifunctional program. The PowerSphere team will use the wraparound contact design approach as the primary solution for solar cell integration and the flex blanket for power distribution.

Simburger, Edward J.↗
NASA NTRS2006

A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

Savich, Gregory R.↗
NASA NTRS2005

Electronics box having internal circuit cards interconnected to external connectors sans motherboard

An electronics chassis box includes a pair of opposing sidewalls, a pair of opposing end walls, a bottom surface, a top cover, and ring connectors assemblies mounted in selective ones of the walls of the electronic box. Boss members extend from the bottom surface at different heights upon which circuit cards are mounted in spatial relationship to each other. A flex interconnect substantially reduces and generally eliminates the need of a motherboard by interconnecting the circuit cards to one another and to external connectors mounted within the ring connector assemblies.

Hockett, John E.↗
NASA NTRS1995

Method for fabricating an interconnected array of semiconductor devices

A method of forming an array of interconnected solar cells. A flexible substrate carrying semiconductor and conductive layers is divided into individual devices by slitting the substrate along the web length. The individual devices are then connected with one another in series by laminating the substrate onto an insulating backing and by depositing conducting interconnection layers which join the lower conductor of one device with the top conductor of the adjoining device.

Grimmer, Derrick P.↗
NASA NTRS1976

Process for making a multilayer interconnect system

A process for making an interconnect system for a multilayer circuit pattern. The interconnect system is formed having minimized through-hole space consumption so as to be suitable for high density, closely meshed circuit patterns.

Zachry, Clyde L.↗
NASA NTRS2011

Decentralized Adaptive Control of Systems with Uncertain Interconnections, Plant-Model Mismatch and Actuator Failures

Decentralized adaptive control is considered for systems consisting of multiple interconnected subsystems. It is assumed that each subsystem s parameters are uncertain and the interconnection parameters are not known. In addition, mismatch can exist between each subsystem and its reference model. A strictly decentralized adaptive control scheme is developed, wherein each subsystem has access only to its own state but has the knowledge of all reference model states. The mismatch is estimated online for each subsystem and the mismatch estimates are used to adaptively modify the corresponding reference models. The adaptive control scheme is extended to the case with actuator failures in addition to mismatch.

Patre, Parag↗
NASA NTRS2014

Copper Nanowire Production for Interconnect Applications

A method of fabricating metallic Cu nanowires with lengths up to about 25 micrometers and diameters in a range 20-100 nanometers, or greater if desired. Vertically oriented or laterally oriented copper oxide structures (CuO and/or Cu2O) are grown on a Cu substrate. The copper oxide structures are reduced with 99+ percent H or H2, and in this reduction process the lengths decrease (to no more than about 25 micrometers), the density of surviving nanostructures on a substrate decreases, and the diameters of the surviving nanostructures have a range, of about 20-100 nanometers. The resulting nanowires are substantially pure Cu and can be oriented laterally (for local or global interconnects) or can be oriented vertically (for standard vertical interconnects).

Han, Jin-Woo↗
NASA NTRS2015

Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype ICs with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3-and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient.

Silicon Carbide↗
NASA NTRS2015

Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype IC's with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3- and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient. Improved reproducibility remains to be accomplished.

JFET↗
NASA NTRS2018

Interconnection of Semiconductor Devices in Extreme Environment Microelectronic Integrated Circuit Chips

A process of fabrication and the resulting integrated circuit device is made of patterned metal electrical interconnections between semiconductor devices residing on and forming extremely harsh environment integrated circuit chips. The process enables more complicated wide band gap semiconductor integrated circuits with more than one level of interconnect to function for prolonged time periods (over 1000 hours) at much higher temperatures (500 C).

Spry, David J.↗
NASA NTRS2017

Pt: Ti Diffusion Barrier, Interconnect, and Simultaneous Ohmic Contacts to n- and p-type 4H-SiC

We report the initial results of using co-sputtered Pt:Ti 80:20 at. % composition ratio metallization as a diffusion barrier against gold (Au) and oxygen (O), as an interconnect layer, as well as forming simultaneous ohmic contacts to n-and p-type 4H-SiC. Having a single conductor with such combined multi-functional attributes would appreciably reduce the fabrication costs, processing time and complexity that are inherent in the production of SiC based devices. Auger Electron Spectroscopy, Focused Ion Beam-assisted Field Emission Scanning Electron Microscopy and Energy Dispersive Spectroscopy analyses revealed no Au and O migration to the SiC contact surface and minimal diffusion through the Pt:Ti barrier layer after 15 minutes of exposure at 800 °C in atmosphere, thus offering potential long term stability of the ohmic contacts. Specific contact resistance values of 7 x 10(exp -5) and 7.4 x 10(exp -4) Ω-sq.cm were obtained on the n (N(sub d)=7 x 10(exp 18) per cu.cm and p (N(sub a)=2 x 10(exp 20) per cu. cm) -type 4H-SiC, respectively. The resistivity of 75 μΩ-cm was obtained for the Pt:Ti layer that was sandwiched between two SiO2 layers and annealed in pure O ambient up to 900 °C, which offers promise as a high temperature interconnect metallization.

Simultaneous Ohmic Contact↗
NASA NTRS2026

Synchronized Eruptions on Io: Possible Evidence of Interconnected Subsurface Magma Reservoirs

On 27 December 2024, Juno's JIRAM (Jovian InfraRed Auroral Mapper) instrument observed an unprecedented volcanic event in Io's southern hemisphere, covering a vast region of ∼65,000 km2, near 73°S, 140°E. Within the imaged region, only one hot spot was previously known (Pfd454). This feature was earlier estimated to cover an area of 300 km2 with a total power output of 34 GW. JIRAM results show that the region produces a power output of 140–260 TW, over 1,000 times higher than earlier estimates and likely exceeding the brightest eruption ever recorded on Io, that of Surt in 2001 (∼80 TW). Three adjacent hot spots also exhibited dramatic power increases: P139, PV18, and an unnamed feature south of the main one that surged to ∼1 TW, placing all of them among the top 10 most powerful hot spots observed on Io. A temperature analysis of the features supports the simultaneous onset of these brightenings and suggests a single eruptive event propagating beneath the surface across hundreds of kilometers; this is the first time this has been observed on Io. This in turn would imply a connection among the hotspots' magma reservoirs, while other nearby hotspots that have been known to be active in the recent past, such as Kurdalagon Patera, appear unaffected. The simultaneity supports models of massive, interconnected magma reservoirs. The topology of these regional magma systems may resemble that of a large-scale sponge, in which the massive reservoirs are the pores, interconnected through a largely solid outer shell.

A Mura↗
DOE OSTI2014

Interconnection of bundled solid oxide fuel cells

A system and method for electrically interconnecting a plurality of fuel cells to provide dense packing of the fuel cells. Each one of the plurality of fuel cells has a plurality of discrete electrical connection points along an outer surface. Electrical connections are made directly between the discrete electrical connection points of adjacent fuel cells so that the fuel cells can be packed more densely. Fuel cells have at least one outer electrode and at least one discrete interconnection to an inner electrode, wherein the outer electrode is one of a cathode and and anode and wherein the inner electrode is the other of the cathode and the anode. In tubular solid oxide fuel cells the discrete electrical connection points are spaced along the length of the fuel cell.

25 ENERGY STORAGE↗
DOE OSTI2014

Using Synchrophasors for Frequency Response Analysis in the Western Interconnection

Frequency response has received a lot of attention in recent years at the national level, which culminated in the development and approval of NERC BAL-003-1 Frequency Response and Frequency Bias Setting Reliability Standard. WECC JSIS, NASPI, BPA, CERTS and PNNL collaborate on the common goals to deliver to the industry applications for frequency response analysis at interconnection, Balancing Authority and individual power plant levels. This paper describes a Frequency Response Analysis Tool that has been used for establishing a frequency response baseline for the Western Interconnection. This paper describes how synchrophasor data is used in for determination of generator characteristics – frequency responsive, under load control or baseloaded. This paper also discusses and provides an example of how the frequency response distribution can impact power pick-up on major transmission paths.

Kosterev, Dmitry↗
DOE OSTI2016

Fuel cell system with interconnect

The present invention includes a fuel cell system having an interconnect that reduces or eliminates diffusion (leakage) of fuel and oxidant by providing an increased densification, by forming the interconnect as a ceramic/metal composite.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2016

Architecture for on-die interconnect

In an embodiment, an apparatus includes: a plurality of islands configured on a semiconductor die, each of the plurality of islands having a plurality of cores; and a plurality of network switches configured on the semiconductor die and each associated with one of the plurality of islands, where each network switch includes a plurality of output ports, a first set of the output ports are each to couple to the associated network switch of an island via a point-to-point interconnect and a second set of the output ports are each to couple to the associated network switches of a plurality of islands via a point-to-multipoint interconnect. Other embodiments are described and claimed.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2013

Role of Wind Power in Primary Frequency Response of an Interconnection: Preprint

The electrical frequency of an interconnection must be maintained very close to its nominal level at all times. Large frequency deviations can lead to unintended consequences such as load shedding, instability, and machine damage, among others. Turbine governors of conventional generating units provide primary frequency response (PFR) to ensure that frequency deviations are not significant duringlarge transient events. Increasing penetrations of variable renewable generation, such as wind and solar power, and planned retirements of conventional thermal plants - and thus a reduction in the amount of suppliers with PFR capabilities - causes concerns about a decline of PFR and system inertia in North America. The capability of inverter-coupled wind generation technologies to contribute toPFR and inertia, if appropriately equipped with the necessary control features, can help alleviate concerns. However, these responses differ from those supplied by conventional generation and inertia, and it is not entirely understood how variable renewable generation will affect the system response at different penetration levels. This paper evaluates the impact of wind generation providing PFRand synthetic inertial response on a large interconnection.

17 WIND ENERGY↗