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Results for “memory effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Implementation of nitrogen-doped titanium-tungsten tunable heater in phase change random access memory and its effects on device performance

Nitrogen-doped titanium-tungsten (N-TiW) was proposed as a tunable heater in Phase Change Random Access Memory (PCRAM). By tuning N-TiW's material properties through doping, the heater can be tailored to optimize the access speed and programming current of PCRAM. Experiments reveal that N-TiW's resistivity increases and thermal conductivity decreases with increasing nitrogen-doping ratio, and N-TiW devices displayed (∼33% to ∼55%) reduced programming currents. However, there is a tradeoff between the current and speed for heater-based PCRAM. Analysis of devices with different N-TiW heaters shows that N-TiW doping levels could be optimized to enable low RESET currents and fast access speeds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1998

Evaluation of Radiation Effects in Flash Memories

Features of flash memories: Flash memories are non-volatile; that is they do not require power to retain the information in its memory. They can be erased and written to while the device is still in the circuit.

Radiation effects↗
DOE OSTI2016

Theoretical description of magnetocaloric effect in the shape memory alloy exhibiting metamagnetic behavior

A simple thermodynamic theory is proposed for the quantitative description of giant magnetocaloric effect observed in metamagnetic shape memory alloys. Both the conventional magnetocaloric effect at the Curie temperature and the inverse magnetocaloric effect at the transition from the ferromagnetic austenite to a weakly magnetic martensite are considered. These effects are evaluated from the Landau-type free energy expression involving exchange interactions in a system of a two magnetic sublattices. The findings of the thermodynamic theory agree with first-principles calculations and experimental results from Ni-Mn-In-Co and Ni-Mn-Sn alloys, respectively.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Effect of virtual memory on efficient solution of two model problems

Computers with virtual memory architecture allow programs to be written as if they were small enough to be contained in memory. Two types of problems are investigated to show that this luxury can lead to quite an inefficient performance if the programmer does not interact strongly with the characteristics of the operating system when developing the program. The two problems considered are the simultaneous solutions of a large linear system of equations by Gaussian elimination and a model three-dimensional finite-difference problem. The Control Data STAR-100 computer runs are made to demonstrate the inefficiencies of programming the problems in the manner one would naturally do if the problems were indeed, small enough to be contained in memory. Program redesigns are presented which achieve large improvements in performance through changes in the computational procedure and the data base arrangement.

Lambiotte, J. J., Jr.↗
NASA NTRSDate not supplied

Performance and Portability of a Linear Solver Across Emerging Architectures

A linear solver algorithm used by a large-scale unstructured-grid computational fluid dynamics application is examined for a broad range of familiar and emerging architectures. Efficient implementation of a linear solver is challenging on recent CPUs offering vector architectures. Vector loads and stores are essential to effectively utilize available memory bandwidth on CPUs, and maintaining performance across different CPUs can be difficult in the face of varying vector lengths offered by each. A similar challenge occurs on GPU architectures, where it is essential to have coalesced memory accesses to utilize memory bandwidth effectively. In this work, we demonstrate that restructuring a computation, and possibly data layout, with regard to architecture is essential to achieve optimal performance by establishing a performance benchmark for each target architecture in a low level language such as vector intrinsics or CUDA. In doing so, we demonstrate how a linear solver kernel can be mapped to Intel® Xeon™ and Xeon Phi™, Marvell® ThunderX2®, NEC® SX-Aurora™ TSUBASA Vector Engine, and NVIDIA® and AMD® GPUs. We further demonstrate that the required code restructuring can be achieved in higher level programming environments such as OpenACC, OCCA, and Intel® OneAPI™/SYCL, and that each generally results in optimal performance on the target architecture. Relative performance metrics for all implementations are shown, and subjective ratings for ease of implementation and optimization are suggested.

Programming models↗
DOE OSTI2015

Quantum anomalous Hall effect in topological insulator memory

We theoretically investigate the quantum anomalous Hall effect (QAHE) in a magnetically coupled three-dimensional-topological insulator (3D-TI) system. We apply the generalized spin-orbit coupling Hamiltonian to obtain the Hall conductivity σ{sup xy} of the system. The underlying topology of the QAHE phenomenon is then analyzed to show the quantization of σ{sup xy} and its relation to the Berry phase of the system. Finally, we analyze the feasibility of utilizing σ{sup xy} as a memory read-out in a 3D-TI based memory at finite temperatures, with comparison to known magnetically doped 3D-TIs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1993

Improved Hall-Effect Sensors For Magnetic Memories

High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.

Wu, Jiin-Chuan↗
DOE OSTI2014

Ni-Mn-Ga shape memory nanoactuation

To probe finite size effects in ferromagnetic shape memory nanoactuators, double-beam structures with minimum dimensions down to 100 nm are designed, fabricated, and characterized in-situ in a scanning electron microscope with respect to their coupled thermo-elastic and electro-thermal properties. Electrical resistance and mechanical beam bending tests demonstrate a reversible thermal shape memory effect down to 100 nm. Electro-thermal actuation involves large temperature gradients along the nanobeam in the order of 100 K/μm. We discuss the influence of surface and twin boundary energies and explain why free-standing nanoactuators behave differently compared to constrained geometries like films and nanocrystalline shape memory alloys.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Interactions Enhance Ramp Reversal Memory in Locally Phase Separated Materials

The ramp-reversal memory (RRM) effect in metal–insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and non-volatile memory devices. Our previous defect motion model successfully explained RRM in vanadium dioxide (VO 2 ), capturing observed critical temperature shifts and memory accumulation throughout the sample. However, this approach lacked interactions between metallic and insulating domains. Here, we extend our model by combining a correlated Random Field Ising Model with defect diffusion-segregation, enabling accurate hysteresis modeling while predicting the relationship between RRM and domain interactions. Our simulations demonstrate that the maximum RRM occurs when the turnaround temperature approaches the inflection point. This peak in RRM vs. turnaround temperature is consistent with prior transport measurements, as well as our own optical measurements reported here. Significantly, we find that increasing nearest-neighbor interactions enhances the maximum memory effect, thus providing a clear mechanism for optimizing RRM performance. Since our model employs minimal assumptions, we predict that RRM should be a widespread phenomenon in materials exhibiting patterned phase coexistence of electronic domains. This work not only advances fundamental understanding of memory behavior in TMOs but also establishes a much-needed theoretical framework for optimizing device applications.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Design, fabrication, testing and delivery of a feasibility model laminated ferrite memory

The effect of using multiword addressing with laminated ferrite arrays was made. Both a reduction in the number of components, and a reduction in power consumption was obtained for memory capacities between one million bits and one million words. An investigation into the effect of variations in the processing steps resulted in a number of process modifications that improved the quality of the arrays. A feasibility model laminated ferrite memory system was constructed by modifying a commercial plated wire memory system to operate with laminated ferrite arrays. To provide flexibility for the testing of the laminated ferrite memory, an exerciser has been constructed to automatically control the loading and recirculation of arbitrary size checkerboard patterns of one's and zero's and to display the patterns of stored information on a CRT screen.

Heckler, H. C.↗