A Brief History of Memory in Space From an SEE Perspective
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Single Event Effects RAM Memory Upsets↗
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Single-Event Effect Performance of a Commercial ReRAM
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFI.
ReRAM↗
Upset Characterization of the PowerPC405 Hard-core Processor Embedded in Virtex-II Pro Field Programmable Gate Arrays
Shown in this presentation are recent results for the upset susceptibility of the various types of memory elements in the embedded PowerPC405 in the Xilinx V2P40 FPGA. For critical flight designs where configuration upsets are mitigated effectively through appropriate design triplication and configuration scrubbing, these upsets of processor elements can dominate the system error rate. Data from irradiations with both protons and heavy ions are given and compared using available models.
radiation effects↗
Single Event Effects Testing of the Linfinity SG1525A Pulse Width Modulator Controller
Pulse Width Modulator (PWM) Controllers are the heart of switching power supply systems in development today. The PWMs considered here have the same integration advantages as many other controllers but it also includes the interface drivers for the follow-on power Field Effect Transistors (FET). Previous work on these types of devices looked into the required test methodologies [ 11 and the impact of radiation on the soft start and shutdown circuits of typically incorporated in the technology [2]. Taking advantage of this previous work this study was undertaken to determine the single event destructive and transient susceptibility of the Linfinity SG1525A Pulse Width Modulator Controller. The device was monitored for transient interruptions in the output signals and for destructive events induced by exposing it to a heavy ion beam at the Texas A&M University Cyclotron Single Event Effects Test Facility. After exposing these devices to the beam, a new upset mode has been identified that can lead to catastrophic power supply system failure if this event would occur while drive power FETs off the two device outputs. The devices and the test methods used will be described first. This will be followed by a brief description of the data collected to date (not all data can be presented with the length constraints of the summary) and a summary of the key results.
Howard, J. W., Jr.↗
Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM
We investigated the heavy ion SEE characteristics of an EEPROM based on CBRAM technology. SEFI is the dominant type of SEE for each operating mode (standby, read-only, write/read). We also observed single bit upsets in the CBRAM cell, during write/read tests. the SEULET threshold is between 10 and 20 MeV * sq cm/mg, with an upper fluence limit of 3 × 10(exp 6) cm(exp -2) at 10 MeV * sq cm/mg. In the stand by mode, the CBRAM array appears immune to bit upsets.
single event effects↗
Single-Event Effect Response of a Commercial ReRAM
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in peripheral circuits, including the sense amplifier.
commercial-off-the-shelf (COT)↗
Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies
We report low-energy proton and low-energy alpha particle single-event effects (SEE) data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) latches and static random access memory (SRAM) that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 megaelectron-volt. The importance of low-energy protons to system-level single-event performance is based on the technology under investigation as well as the target radiation environment.
random access memory↗
Radiation Single Event Effects (SEE) Impact on Complex Avionics Architecture Reliability
The NASA Engineering and Safety Center (NESC) has an urgent need to understand how system-level reliability of an avionics architecture is compromised when portions of the architecture are temporarily unavailable due to single event effects (SEE). The proposed activity parametrically evaluated these SEE impacts on system reliability based on mission duration, upset rate and recovery times for a representative redundant architecture. The key stakeholders for this study are NASA programs and projects that expect to use avionics architectures with electrical, electronic and electromechanical (EEE) parts susceptible to SEE when exposed to the mission expected radiation environment.
Hodson, Robert F.↗
Estimates of SEU rates from heavy ions in devices exhibiting dual-node susceptibility
A single-event effect (SEE) occurs when a single ionizing particle passing through an electronic device produces a detectable event in the device. The type of SEE most frequently discussed in the literature is a "single-node upset" problem in which an upset at a given node depends only on conditions seen by that node. In contrast, some devices are designed so that an upset becomes a "dual-node" problem in which a device upset depends on conditions simultaneously seen by two nodes. This report derives a method for estimating heavy-ion induced upset rates for the dual-node problem.
Edmonds, Larry D.↗
Diagnosis of NMOS DRAM functional performance as affected by a picosecond dye laser
A picosec pulsed dye laser beam was at selected wavelengths successfully used to simulate heavy-ion single-event effects (SEEs) in negative channel NMOS DRAMs. A DRAM was used to develop the test technique because bit-mapping capability and previous heavy-ion upset data were available. The present analysis is the first to establish such a correlation between laser and heavy-ion data for devices, such as the NMOS DRAM, where charge collection is dominated by long-range diffusion, which is controlled by carrier density at remote distances from a depletion region. In the latter case, penetration depth is an important parameter and is included in the present analysis. A single-pulse picosecond dye laser beam (1.5 microns diameter) focused onto a single cell component can upset a single memory cell; clusters of memory cell upsets (multiple errors) were observed when the laser energy was increased above the threshold energy. The multiple errors were analyzed as a function of the bias voltage and total energy of a single pulse. A diffusion model to distinguish the multiple upsets from the laser-induced charge agreed well with previously reported heavy ion data.
Kim, Q.↗
CREME96 and Related Error Rate Prediction Methods
Predicting the rate of occurrence of single event effects (SEEs) in space requires knowledge of the radiation environment and the response of electronic devices to that environment. Several analytical models have been developed over the past 36 years to predict SEE rates. The first error rate calculations were performed by Binder, Smith and Holman. Bradford and Pickel and Blandford, in their CRIER (Cosmic-Ray-Induced-Error-Rate) analysis code introduced the basic Rectangular ParallelePiped (RPP) method for error rate calculations. For the radiation environment at the part, both made use of the Cosmic Ray LET (Linear Energy Transfer) spectra calculated by Heinrich for various absorber Depths. A more detailed model for the space radiation environment within spacecraft was developed by Adams and co-workers. This model, together with a reformulation of the RPP method published by Pickel and Blandford, was used to create the CR ME (Cosmic Ray Effects on Micro-Electronics) code. About the same time Shapiro wrote the CRUP (Cosmic Ray Upset Program) based on the RPP method published by Bradford. It was the first code to specifically take into account charge collection from outside the depletion region due to deformation of the electric field caused by the incident cosmic ray. Other early rate prediction methods and codes include the Single Event Figure of Merit, NOVICE, the Space Radiation code and the effective flux method of Binder which is the basis of the SEFA (Scott Effective Flux Approximation) model. By the early 1990s it was becoming clear that CREME and the other early models needed Revision. This revision, CREME96, was completed and released as a WWW-based tool, one of the first of its kind. The revisions in CREME96 included improved environmental models and improved models for calculating single event effects. The need for a revision of CREME also stimulated the development of the CHIME (CRRES/SPACERAD Heavy Ion Model of the Environment) and MACREE (Modeling and Analysis of Cosmic Ray Effects in Electronics). The Single Event Figure of Merit method was also revised to use the solar minimum galactic cosmic ray spectrum and extended to circular orbits down to 200 km at any inclination. More recently a series of commercial codes was developed by TRAD (Test & Radiations) which includes the OMERE code which calculates single event effects. There are other error rate prediction methods which use Monte Carlo techniques. In this chapter the analytic methods for estimating the environment within spacecraft will be discussed.
Adams, James H., Jr.↗
Uncertainties in radiation effect predictions for the natural radiation environments of space
Future manned missions beyond low earth orbit require accurate predictions of the risk to astronauts and to critical systems from exposure to ionizing radiation. For low-level exposures, the hazards are dominated by rare single-event phenomena where individual cosmic-ray particles or spallation reactions result in potentially catastrophic changes in critical components. Examples might be a biological lesion leading to cancer in an astronaut or a memory upset leading to an undesired rocket firing. The risks of such events appears to depend on the amount of energy deposited within critical sensitive volumes of biological cells and microelectronic components. The critical environmental information needed to estimate the risks posed by the natural space environments, including solar flares, is the number of times more than a threshold amount of energy for an event will be deposited in the critical microvolumes. These predictions are complicated by uncertainties in the natural environments, particularly the composition of flares, and by the effects of shielding. Microdosimetric data for large numbers of orbits are needed to improve the environmental models and to test the transport codes used to predict event rates.
Mcnulty, P. J.↗
Mitigating Upsets in SRAM-Based FPGAs from the Xilinx Virtex 2 Family
Static random access memory (SRAM) upset rates in field programmable gate arrays (FPGAs) from the Xilinx Virtex 2 family have been tested for radiation effects on configuration memory, block RAM and the power-on-reset (POR) and SelectMAP single event functional interrupts (SEFIs). Dynamic testing has shown the effectiveness and value of Triple Module Redundancy (TMR) and partial reconfiguration when used in conjunction. Continuing dynamic testing for more complex designs and other Virtex 2 capabilities (i.e., I/O standards, digital clock managers (DCM), etc.) is scheduled.
SEE testing↗
Mission Radiation Environment Modeling and Analysis: Avionics Trade Study for GCD Rad-Neuro Project
The two main objectives of this trade study are characterizing the mission radiation environment for multiple Design Reference Missions (DRM) and analysis of radiation effects on avionics with the goal of producing radiation tolerant Neuromorphic Computing processor chips with innovative radiation-induced fault mitigation. The NASA process for defining radiation requirements for flight avionics is applied to this domain. The effects of trapped protons and electrons in the Van Allen radiation belts predominates in Low-Earth-Orbit (LEO) and the solar wind, solar flares and Galactic Cosmic Rays (GCRs) are the dominant radiation challenge in the open space between the planets of our solar system. The nature and energy of the particles that cause circuit upset and failure is very different in the two regimes. Two results are produced from the radiation models: determining the Total Integrated Dose (TID) experienced by avionics for a given DRM and predicting the Single Event Effects (SEE) rates for avionics during high rate exposure. These tools are applied to existing semiconductors and can be used for predicting the radiation performance of future semiconductors based on early radiation testing of new devices.
Space Radiation↗
Single-Event Latchup Testing of the Micrel MIC4424 Dual Power MOSFET Driver
We conducted 47 exposures of four different MIC4424 devices and did not observe any SEL or high-current events. This included worst-case conditions with a LET of 81 MeV-sq cm/mg, applied voltage of 18.5 V, a case temperature greater than 120 C, and a final fluence of 1x10(exp 7)/sq cm. We also monitored both the outputs for the presence of SETs. While the period of the 1 MHz square wave was slightly altered in some cases, no pulses were added or deleted. 1. Purpose: The purpose of this testing is to characterize the BiCMOS/DMOS Micrel MIC4424 dual, non-inverting MOSFET driver for single-event latchup (SEL) susceptibility. These data will be used for flight lot evaluation purposes. 2. Devices Tested: The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. Five (5) parts were provided for SEL testing. We prepared four parts for irradiation and reserved one piece as an un-irradiated control. More information about the devices can be found in Table 1. The parts were prepared for testing by removing the lid from the CDIP package to expose the target die. The parts were then soldered to small copper circuit adapter boards for easy handling. These parts are fabricated in a bulk BiCMOS/DMOS technology. Since we do not know the number of overlayers used in the fabrication processes, linear energy transfer calculations are determined based on the top-surface incident ion species and kinetic energy.
Power MOSFET↗
Virtex-II Pro PowerPC SEE Characterization Test Methods and Results
The Xilinx Vix-11 Pro is a platform FPGA that embeds multiple microprocessors within the fabric of an SRAM-based reprogrammable FPGA. The variety and quantity of resources provided by this family of devices make them very attractive for spaceflight applications. However,these devices will be susceptible to single event effects (SEE), which must be mitigated. Observations from prior testing of the Xilinx Virtex-II Pro suggest that the PowerPC core has significant vulnerability to SEES. However, these initial tests were not designed to exclusively target the functionality of the PowerPC, therefore making it difficult to distinguish processor upsets from fabric upsets. The main focus of this paper involves detailed SEE testing of the embedded PowerPC core. Due to the complexity of the PowerPC, various custom test applications, both static and dynamic, will be designed to isolate each Unit of the processor. Collective analysis of the test results will provide insight into the exact upset mechanism of the PowerPC. With this information, mitigations schemes can be developed and tested that address the specific susceptibilities of these devices. The test bed will be the Xilinx SEE Consortium Virtex-II Pro test board, which allows for configuration scrubbing, design triplication, and ease of data collection. Testing will be performed at the Indiana University Cyclotron Facility using protons of varying energy levels and fluencies. This paper will present the detailed test approach along with the results.
Petrick, David↗
REE radiation fault model: a tool for organizing and communication radiation test data and construction COTS based spacebourne computing systems
The growth in data rates of instruments on future NASA spacecraft continues to outstrip the improvement in communications bandwidth and processing capabilities of radiation-hardened computers. Sophisticated autonomous operations strategies will further increase the processing workload. Given the reductions in spacecraft size and available power, standard radiation hardened computing systems alone will not be able to address the requirements of future missions. The REE project was intended to overcome this obstacle by developing a COTS- based supercomputer suitable for use as a science and autonomy data processor in most space environments. This development required a detailed knowledge of system behavior in the presence of Single Event Effect (SEE) induced faults so that mitigation strategies could be designed to recover system level reliability while maintaining the COTS throughput advantage. The REE project has developed a suite of tools and a methodology for predicting SEU induced transient fault rates in a range of natural space environments from ground-based radiation testing of component parts. In this paper we provide an overview of this methodology and tool set with a concentration on the radiation fault model and its use in the REE system development methodology. Using test data reported elsewhere in this and other conferences, we predict upset rates for a particular COTS single board computer configuration in several space environments.
Radiation Effects Modeling COTS computers REE SEU ↗
A Monte Carlo Model for LET Spectra of 200 MeV Protons Used for Microelectronic Testing
The direct ionization Linear Energy Transfer (LET) for 200 MeV protons in silicon is much smaller than that for higher charged particles since LET increases as the square of the ion charge. However, occasionally the proton interacts with the silicon nuclei and produces a shower of fragments and a recoiling nucleus. When this happens, the LET produced is much greater than the direct ionization LET. Testing the single event effect susceptibility of components using energetic (200 MeV) protons is often the only viable option for system level testing commercial-off-the-shelf (COTS) avionics that have not been designed for space environments. However, the question of how a system tested with protons will perform in a heavy ion environment arises. Here the concern is not only with prediction of on-orbit upset rate, but also about possibility of on-orbit failures that were not observed during proton testing.
O'Neill, Patrick M.↗