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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
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NASA NTRS1977

Electrostatically focused intensified charge coupled devices

Work performed to develop intensified charge coupled devices (ICCDs) is presented. Four ICCDs, containing 100 x 160 arrays, were fabricated. Electron gains up to 3200 at 15 keV were achieved. Photocathode sensitivities ranged from 190 to 410 micro A/lumen. Dark currents varied from 11 nA/sq cm to 37 nA/sq cm. There was serious concern about the reliability of the bonding scheme for ICCDs due to occassional bond failure. Two solutions to this problem were developed. One involved a modification of the existing bonding technique, and the other was the development of a protected bond pad employing a barrier metal between the aluminum metallization and the gold bond wire. An accumulation process was characterized with respect to its most critical variable. This characterization led to the achievement of reproducible spectral response and the discovery and elimination of dark current increase associated with this process.

Walker, J. W.↗
NASA NTRS1979

Long-term temperature effects on GaAs solar cells

The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space environment is investigated. The solar cell degradation effects caused by zinc and aluminum diffusion as well as deterioration by arsenic evaporation are presented. Also, the results are presented of experimental testing and measurements of various GaAs solar cell properties while the solar cell was operating in the temperature range of 27 C to 350 C. In particular, the properties of light current voltage curves, dark current voltage curves, and spectral response characteristics are given. Finally, some theoretical models for the annealing of radiation damage over various times and temperatures are included.

Heinbockel, J. H.↗
NASA NTRS1979

Design, fabrication, and delivery of a charge injection device as a stellar tracking device

Six 128 x 128 CID imagers fabricated on bulk silicon and with thin polysilicon upper-level electrodes were tested in a star tracking mode. Noise and spectral response were measured as a function of temperature over the range of +25 C to -40 C. Noise at 0 C and below was less than 40 rms carriers/pixel for all devices at an effective noise bandwidth of 150 Hz. Quantum yield for all devices averaged 40% from 0.4 to 1.0 microns with no measurable temperature dependence. Extrapolating from these performance parameters to those of a large (400 x 400) array and accounting for design and processing improvements, indicates that the larger array would show a further improvement in noise performance -- on the order of 25 carriers. A preliminary evaluation of the projected performance of the 400 x 400 array and a representative set of star sensor requirements indicates that the CID has excellent potential as a stellar tracking device.

Burke, H. K.↗
NASA NTRS1978

A demonstration of wetland vegetation mapping in Florida from computer-processed satellite and aircraft multispectral scanner data

The author has identified the following significant results. Major vegetative classes identified by the remote sensing technique were cypress swamp, pine, wetland grasses, salt grass, mixed mangrove, black mangrove, Brazilian pepper. Australian pine and melaleuca were not satisfactorily classified from LANDSAT. Aircraft scanners provided better resolution resulting in a classification of finer surface detail. An edge effect, created by the integration of diverse spectral responses within boundary elements of digital data, affected the wetlands classification. Accuracy classification for aircraft was 68% and for LANDSAT was 74%.

Butera, M. K.↗
NASA NTRS1979

Low energy proton radiation damage to (AlGa)As-GaAs solar cells

Twenty-seven 2 times 2 sq cm (AlGa)As-GaAs solar cells were fabricated and subjected to 50 keV, 100 keV, and 290 keV of proton irradiation along with eighteen high efficiency silicon solar cells. The results of the study further corroborate the advantages for space missions offered by GaAs cells over state of the art silicon cells. Thus, even though the GaAs cells showed greater degradation when irradiated by protons with energy less than 5 MeV, the solar cells were normally protected from these protons by the glass covers used in space arrays. The GaAs cells also offered superior end of life power capability compared with silicon. The change in the open circuit voltage, short circuit current, spectral response, and dark 1-5 characteristics after irradiation at each proton energy and fluence were found to be consistent with the explanation of the effect of the protons. Also dark 1-5 characteristics showed that a new recombination center dominates the current transport mechanism after irradiation.

Loo, R.↗
NASA NTRS1979

Spectral measurements of ocean-dumped wastes tested in the marine upwelled spectral signature laboratory

Transmission and inherent upwelled radiance measurements were made of various mixtures of three ocean-dumped industrial plant wastes in artificial seawater. Laboratory analyses were made of the physical and chemical properties of the various mixtures. These results and the laboratory measurements of beam attenuation and inherent upwelled radiance indicate a variety of chemical and spectral responses when industrial wastes are added to artificial seawater. In particular, increased levels of turbidity did not always cause increased levels of inherent reflectance.

Witte, W. G.↗
NASA NTRS1979

Electron irradiation of tandem junction solar cells

The electrical behavior of 100 micron thick tandem junction solar cells manufactured by Texas Instruments was studied as a function of 1 MeV electron fluence, photon irradiation, and 60 C annealing. These cells are found to degrade rapidly with radiation, the most serious loss occurring in the blue end of the cell's spectral response. No photon degradation was found to occur, but the cells did anneal a small amount at 60 C.

Anspaugh, B. E.↗
NASA NTRS1979

Radiation effects in GaAs AMOS solar cells

The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.

Shin, B. K.↗
NASA NTRS1979

Annealing of radiation damage in 0.1- and 2-ohm-centimeter Silicon solar cells

Isochronal and isothermal annealing studies were conducted on 0.1 and 2 ohm centimeter n(+)/p silicon cells after irradiation by 1 MeV electrons at fluences of 10 to the 14th power, 5 times 10 to the 14th power, and 10 to the 15th power per square centimeter. For the 0.1 ohm centimeter cells, reverse annealing was not observed in the isochronal data. However, reverse annealing was observed between approximately 200 and 325 C in the isochronal data of the 2 ohm centimeter cells. Isothermal annealing of 0.1 ohm centimeter cells at 500 C restored pre-irradiation maximum power P sub max within 20 minutes at fluence = 10 to the 14th power, in 180 minutes at fluence = 5 times 10 to the 14th power and to 92 percent of pre-irradiation P sub max in 180 minutes for fluence = 10 to the 15th power. Annealing at 450 C was found inadequate to restore 0.1 ohm centimeter cell performance within reasonable times for all fluence levels. By comparison, at 450 C, the P sub max of 2 ohm centimeter cells was restored within 45 minutes, for the two highest fluence levels, while for the lowest fluence, restoration was completed within 15 minutes. Spectral response data indicate that, for both resistivities, degradation occurs predominantly in the cells p-type base region.

Weinberg, I.↗
NASA NTRS1978

Time-delay-and-integration charge coupled devices /CCDs/ applied to the Thematic Mapper

The visible focal plane of the Thematic Mapper, the next generation sensor system for application to earth resource survey, uses complex hybrid assembly techniques to interface silicon photodiodes to JFET preamplifiers. This complexity can be ameliorated by the use of a 20-channel time-delay-and-integration (TDI) CCD with nine stages of integration per channel. By going to a CCD array operating in a TDI mode, over 700 individual op amps can be replaced with only 48 op amps. Smooth spectral response and 70% quantum efficiency have been provided by using doped tin oxide gates over the imaging region.

Thompson, L. L.↗
NASA NTRS1978

Thin silicon solar cell performance characteristics

Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.

Gay, C. F.↗
NASA NTRS1978

Effect of copper impurity on polycrystalline silicon solar cells

The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.

Daud, T.↗
NASA NTRS1978

Electron and proton degradation in /AlGa/As-GaAs solar cells

Results on radiation damage in (AlGa)As-GaAs solar cells by 1 MeV electron fluences up to 10 to the 16th electrons/sq cm and by 15, 20, 30 and 40 MeV proton fluences up to 5 times 10 to the 11th protons/sq cm are presented. The damage is compared with data on state-of-the-art silicon cells which were irradiated along with the gallium arsenide cells. The theoretical expectation that the junction depth has to be kept relatively shallow, to minimize radiation damage has been verified experimentally. The damage to the GaAs cells as a function of irradiation, is correlated with the change in their spectral response and dark I-V characteristics. The effect of thermal annealing on the (AlGa)As-GaAs solar cells was also investigated. This data is used to predict further avenues of optimization of the GaAs cells.

Loo, R.↗
NASA NTRS1978

Comparison of theoretical and experimental solar cell performance

This paper presents the results of a detailed comparison between the theoretically predicted performance of silicon solar cells and the experimentally observed performance. The comparison has included the dark I-V characteristics, the spectral response characteristics and the I-V characteristics under AM0 illumination. In general it has been found that the agreement between theory and experimental behavior is very good. This good agreement has been obtained for a variety of cells fabricated with junction depths ranging from 0.1 micron to more than 1 micron and for base layer resistivities from 10 to 0.1 ohm-cm.

Fang, C. R.↗
NASA NTRS1979

Some recent results in quiescent prominence spectrometry

This paper describes some recent results of a quiescent-prominence spectrometry program. The observations were made with a 25-cm coronagraph/coude spectrograph system using a silicon vidicon detector. This detector consists of 500 contiguous channels covering approximately 6 or 80 A, depending on the grating used. The instrument is interfaced to a computer system and has the important advantages of wide spectral response, linearity, and signal averaging with real-time display. Its principal drawback is the relatively small target size. For the present work, the aperture was about 3 x 5 arcsec. Absolute intensity calibrations were made by measuring quiet regions near the center of the sun.

Landman, D. A.↗
NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Yoo, H. I.↗
NASA NTRS1980

Global calibration of terrestrial reference cells and errors involved in using different irradiance monitoring techniques

The feasibility of global calibration of terrestrial reference cells is discussed. A simple, accurate 'secondary' calibration technique based on ratios of test to reference cell currents measured in natural sunlight is described. Different techniques for monitoring incident irradiance during solar cell performance measurements are also examined and assessed, including the techniques of black-body detectors, calibrated reference cells, and the convolution of spectral response with solar irradiance.

Curtis, H. B.↗
NASA NTRS1980

Thin n-i-p radiation-resistant solar cell feasibility study

Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.

Allison, J. F.↗