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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules: Preprint

Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for switching of high voltages and currents. Usage and environmental conditions can cause these power modules to degrade over time, and this gradual process may eventually lead to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization was performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment was aimed to assess the potential damage effects of thermal cycling on die attach, results indicated that wirebond degradation was the life limiting failure mechanism.

33 ADVANCED PROPULSION SYSTEMS↗
NASA NTRS2006

Submicrosecond Power-Switching Test Circuit

A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a repetitive waveform from a signal generator, momentary closure of a push-button switch, or closure or opening of a manually operated on/off switch. In the case of a signal generator, one can adjust the frequency and duty cycle as needed to obtain the desired AC power-supply response, which one could display on an oscilloscope. Momentary switch closure could be useful for obtaining (and, if desired, displaying on an oscilloscope set to trigger on an event) the response of a power supply to a single load transient. The on/off switch can be used to switch between load states in which static-load regulation measurements are performed.

Folk, Eric N.↗
DOE OSTI2020

Spin–orbit torques in structures with asymmetric dusting layers

Current-induced spin–orbit torques (SOTs) in heavy metal/ferromagnet heterostructures have emerged as an efficient method for magnetization switching with applications in nonvolatile magnetic memory and logic devices. However, experimental realization of SOT switching of perpendicular magnetization requires an additional inversion symmetry breaking, calling for modifications of the conventional SOT heterostructures. In this work, we study SOTs and deterministic switching of perpendicular magnetization by inserting different asymmetric dusting layers at the heavy metal/ferromagnet interface. Similar to the previous works with lateral structural asymmetry, we study the emergence of current-induced perpendicular effective magnetic fields (H z eff ). By examining three different material combinations of heavy metal/dusting layers (W/IrMn, Pt/IrMn, and W/Ta), we shed light on the origins of H z eff ; we show that H z eff is generically created in all the studied asymmetric structures, has a close correlation with the interfacial magnetic anisotropy, and is independent of the signs of spin Hall angles of the materials. Furthermore, we show that the induction of H z eff enables field-free deterministic SOT switching of perpendicular magnetization. Our results can be used in designing SOT heterostructures for practical applications in nonvolatile technologies.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1981

Fast microwave switching power divider

Unit divides power from single input among any 12 of 120 output terminals and redistributes it in 6 microseconds. Microwave current from coaxial line excites disk feeding many radial strip transmission lines. Built for use in electronically-steered S-band antenna, device also divides and switches energy among filters and phase shifters.

Johnson, R. W.↗
NASA NTRS1992

SNS Heterojunctions With New Combinations Of Materials

New combinations of materials proposed for superconductor/normal-metal/superconductor (SNS) heterojunctions in low-temperature electronic devices such as fast switches, magnetometers, and mixers. Epitaxial heterojunctions formed between high-temperature superconductors and either oxide semiconductors or metals. Concept offers alternative to other three-layer heterojunction concepts; physical principles of operation permit SNS devices to have thicker barrier layers and fabricated more easily.

Vasquez, Richard P.↗
DOE OSTI2020

Redox transistors based on TiO 2 for analogue neuromorphic computing

The ability to train deep neural networks on large data sets have made significant impacts onto artificial intelligence, but consume significant amounts of energy due to the need to move information from memory to logic units. In-memory "neuromorphic" computing presents an alternative framework that processes information directly on memory elements. In-memory computing has been limited by the poor performance of the analogue information storage element, often phase-change memory or memristors. To solve this problem, we developed two types of "redox transistors" using TiO 2 (anatase) which stores analogue information states through the electrochemical concentration of dopants in the crystal. The first type of redox transistor uses lithium as the electrochemical dopant ion, and its key advantage is low operating voltage. The second uses oxygen vacancies as the dopant, which is CMOS compatible and can retain state even when scaled to nanosized dimensions. Both devices offer significant advantages in terms of predictable analogue switching over conventional filamentary-based devices, and provide a significant advance in developing materials and devices for neuromorphic computing.

36 MATERIALS SCIENCE↗
NASA NTRS2013

Development and Testing of a Variable Conductance Thermal Acquisition, Transport, and Switching System

This paper describes the development and testing of a scalable thermal control architecture for instruments, subsystems, or systems that must operate in severe space environments with wide variations in sink temperature. The architecture is comprised by linking one or more hot-side variable conductance heat pipes (VCHPs) in series with one or more cold-side loop heat pipes (LHPs). The VCHPs provide wide area heat acquisition, limited distance thermal transport, modest against gravity pumping, concentrated LHP startup heating, and high switching ratio variable conductance operation. The LHPs provide localized heat acquisition, long distance thermal transport, significant against gravity pumping, and high switching ratio variable conductance operation. Combining two variable conductance devices in series ensures very high switching ratio isolation from severe environments like the Earth's moon, where each lunar day spans 15 Earth days (270 K sink, with a surface-shielded/space viewing radiator) and each lunar night spans 15 Earth days (80-100 K radiative sink, depending on location). The single VCHP-single LHP system described herein was developed to maintain thermal control of International Lunar Network (ILN) anchor node lander electronics, but it is also applicable to other variable heat rejection space missions in severe environments. The LHPVCHP system utilizes a stainless steel wire mesh wick ammonia VCHP, a Teflon wick propylene LHP, a pair of one-third square meter high  radiators (one capillary-pumped horizontal radiator and a second gravity-fed vertical radiator), a half-meter of transport distance, and a wick-bearing co-located flow regulator (CLFR) to allow operation with a hot (deactivated) radiator. The VCHP was designed with a small reservoir formed by extending the length of its stainless steel heat pipe tubing. The system was able to provide end-to-end switching ratios of 300-500 during thermal vacuum testing at ATK, including 3-5 W/K ON conductance and 0.01 W/K OFF conductance. The test results described herein also include an in-depth analysis of VCHP condenser performance to explain VCHP switching operation in detail. Future multi-VCHP/multi-LHP thermal management system concepts that provide scalability to higher powers/longer transport lengths are also discussed in the paper.

Bugby, D. C.↗
NASA NTRS2008

Fast Electromechanical Switches Based on Carbon Nanotubes

Electrostatically actuated nanoelectromechanical switches based on carbon nanotubes have been fabricated and tested in a continuing effort to develop high-speed switches for a variety of stationary and portable electronic equipment. As explained below, these devices offer advantages over electrostatically actuated microelectromechanical switches, which, heretofore, have represented the state of the art of rapid, highly miniaturized electromechanical switches. Potential applications for these devices include computer memories, cellular telephones, communication networks, scientific instrumentation, and general radiation-hard electronic equipment. A representative device of the present type includes a single-wall carbon nanotube suspended over a trench about 130 nm wide and 20 nm deep in an electrically insulating material. The ends of the carbon nanotube are connected to metal electrodes, denoted the source and drain electrodes. At bottom of the trench is another metal electrode, denoted the pull electrode (see figure). In the off or open switch state, no voltage is applied, and the nanotube remains out of contact with the pull electrode. When a sufficiently large electric potential (switching potential) is applied between the pull electrode and either or both of the source and drain electrodes, the resulting electrostatic attraction bends and stretches the nanotube into contact with the pull electrode, thereby putting the switch into the "on" or "closed" state, in which substantial current (typically as much as hundreds of nanoamperes) is conducted. Devices of this type for use in initial experiments were fabricated on a thermally oxidized Si wafer, onto which Nb was sputter-deposited for use as the pull-electrode layer. Nb was chosen because its refractory nature would enable it to withstand the chemical and thermal conditions to be subsequently imposed for growing carbon nanotubes. A 200- nm-thick layer of SiO2 was formed on top of the Nb layer by plasma-enhanced chemical vapor deposition. In the device regions, the SiO2 layer was patterned to thin it to the 20-nm trench depth. The trenches were then patterned by electron- beam lithography and formed by reactive- ion etching of the pattern through the 20-nm-thick SiO2 to the Nb layer.

Kaul, Anupama↗
DOE OSTI2025

Design and Fabrication of a Thyristor Using Ion Implantation of Anode and Cathode

A thyristor is a solid-state semiconductor switch made up of four alternating p and n type layers. When the switch is turned on by a small pulse, current can flow as long as the device stays on. When the voltage drops below the turn on level or the current reverses, the switch will turn off. Thyristors only allow current to flow in one direction. One of the benefits of a thyristor device is in its capacity to conduct large voltages with a small device and a small turn-on pulse requirement. Another distinguishing feature of thyristors compared to other semiconductor devices is that it can only be in the on or off state, there’s no in-between state for the device to exist within. These properties make thyristors very useful as switch devices, especially in applications where current flow is only needed in one direction and could potentially be damaging in the opposite direction. Currently, thyristors are most commonly used to control very high power loads and they are available commercially in many designs to control different amounts of current.

42 ENGINEERING↗
NASA NTRS1981

High-frequency high-voltage high-power DC-to-DC converters

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Wilson, T. G.↗
NASA NTRS2005

Temperature Tolerant Evolvable Systems Utilizing FPGA Boards and Bias-Controlled Amplifiers

Space missions often require radiation and extreme-temperature hardened electronics to survive the harsh environments beyond Earth's atmosphere. Traditional approaches to preserve electronics incorporate shielding, insulation and redundancy at the expense of power and weight. However, a novel way of bypassing these problems is the concept of evolutionary hardware. A reconfigurable device, consisting of several switches interconnected with analog/digital parts, is controlled by an evolutionary processor (EP). When the EP detects degradation in the circuit it sends signals to reconfigure the switches, thus forming a new circuit with the desired output. This concept has been developed since the mid-l990s, but one problem remains-the EP cannot degrade substantially. For this reason, extensive testing at extreme temperatures (-180 to 120 C) has been done on devices found on FPGA boards (taking the role of the EP), such as the Analog to Digital and the Digital to Analog Converter. The EP is used in conjunction with a bias-controlled amplifier and a new prototype relay board, which is interconnected with 6 G4-FETs, a tri-input transistor-like element developed at JPL. The greatest improvements to be made lie in the reconfigurable device, so future design and testing of the G4-FET chip is required.

Kumar, Nikhil R.↗
NASA NTRS2006

Data Converters Performance at Extreme Temperatures

Space missions often require radiation and extreme-temperature hardened electronics to survive the harsh environments beyond earth's atmosphere. Traditional approaches to preserve electronics incorporate shielding, insulation and redundancy at the expense of power and weight. However, a novel way of bypassing these problems is the concept of evolutionary hardware. A reconfgurable device, consisting of several switches interconnected with analog/digital parts, is controlled by an evolutionary processor (EP). When the EP detects degradation in the circuit it sends signals to reconfgure the switches, thus forming a new circuit with the desired output. This concept has been developed since the mid-90s, but one problem remains - the EP cannot degrade substantially. For this reason, extensive testing at extreme temperatures (-180' to 120(deg)C) has been done on devices found on FPGA boards (taking the role of the EP) such as the Analog to Digital and the Digital to Analog Converter. Analysis of the results has shown that FPGA boards implementing EP with some compensation may be a practical solution to evolving circuits. This paper describes results on the tests of data converters at extreme temperatures.

evolvable hardware↗
NASA NTRS1984

A new FET-bipolar combinational power semiconductor switch

A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.

Chen, D. Y.↗
NASA NTRS1973

Engineering test procedure for the patient assist device

The test procedure completely tests the functioning of the patient assist device. All modes of operation are included in the test. Patient activated switches may be chosen for use with this device as desired. These switches, however, must be single-pole, single-throw, momentarily-on switches.

Schroder, M. A.↗
NASA NTRS1980

Overload protection for switching regulators

Circuit protects all output lines of switching regulator against overloads without requiring current sensors on every line. If overload is sensed, device short circuits bias on switching transistor so that power is rapidly cut off from loads. Circuit also includes delay network to inhibit erroneous operation during startup.

Lachochi, E.↗
NASA NTRS2008

Carbon Nanotube Switches for Communication and Memory Applications

Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

memory devices↗
DOE OSTI2021

Active Tuning of Optical Constants in the Visible–UV: Praseodymium-Doped Ceria—a Model Mixed Ionic–Electronic Conductor

Mixed ionic-electronic conductors offer chemical and electrical means for active tuning of their optical constants, e.g. with variations in oxygen non-stoichiometry in Pr 0.1 Ce 0.9 O 2-δ , enabling implementation of adaptive thin film optical devices. Here, we demonstrate in-situ chemo-tuning of the extinction coefficient in Pr 0.1 Ce 0.9 O 2-δ at elevated temperatures and provide a tuning model that treats the interdependence of mobile oxygen vacancies and small polarons coupled to variations in optically active praseodymium ions. Further, a new means for electro-tuning of the optical constants of mixed ionic-electronic conductors was demonstrated experimentally and modeled for Pr 0.1 Ce 0.9 O 2-δ thin films deposited on grid-like electrode structures. Modeling of non-steady state optical transmittance modulations in the latter allows for estimation of oxygen vacancy mobility that determines the switching speed of the device. Quenched-in values of nr and k to room temperature become nonvolatile, providing a modulation range in the extinction coefficient of Δk ~0.1 (change of ~800%) and in the refractive index of Δn r ~0.1 (relative to initial n r of ~2.35). Key figures of merit including, transmission optical modulation of ~0.04 per 1 mV nm -1 , switching energy per area of 670 pJ μm -2 and switching times of seconds, were demonstrated, with further improvements possible.

36 MATERIALS SCIENCE↗
DOE OSTI2021

New Modulation and Impact of Transformer Leakage Inductance on Current-Source Solid-State Transformer

This article presents a novel modulation scheme for device voltage stress mitigation and comprehensive analysis of the impact of transformer leakage inductance in a current-source solid-state transformer (SST). Different from dual active bridge (DAB) SST, the operation of the current-source SST is similar to that of a flyback converter. The device bridge on only one side of the transformer is active to store energy into or release energy from the magnetizing inductance which acts as a current-source dc link. Such flyback operation with reverse-blocking switches can lead to additional device voltage stress and incomplete zero-voltage switching (ZVS) on the current-source soft-switching solid-state transformer (S4T) under conventional modulation. A new modulation scheme is proposed to address this issue. Moreover, different from the DAB, the leakage inductance of the medium-frequency transformer (MFT) in the S4T is a parasitic element similar to that in a matrix SST and can cause additional device voltage stress. Though the resonant capacitors, originally added to achieve ZVS, can absorb and recycle the leakage energy in the S4T, these capacitors need to be increased with larger leakage inductances to limit the voltage stress. However, large resonant capacitors can result in more lost duty cycles and reduced efficiency. The impact of such leakage inductance on device voltage stress is analyzed comprehensively, which is critical to guide future research and design of the S4T. Experimental results from S4T prototypes for DC-DC, multiport AC-DC, and AC-AC conversion with 1:1 and 4:1 MFT comprehensively verify the proposed concepts. Lastly, a case study of a three-phase AC-AC S4T over a power range from 1 kVA to 100 kVA each module reveals that the MFT leakage inductance should be less than 1% of the magnetizing inductance for safe operation.

14 SOLAR ENERGY↗