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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
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Investigating Material Behavior in Atmospheric Entry Conditions: Arc-Jet Testing Insights from Meteorite Ablation to High-Temperature Coatings.

Arc-jet testing is an indispensable tool in elucidating the complex interactions materials undergo when subjected to the extreme thermal and mechanical stresses of atmospheric entry. By replicating these harsh conditions, arc-jets enable researchers to explore critical phenomena such as ablation, melting, and spallation, generating invaluable data that informs the development of sophisticated, physics-based models. These models are pivotal not only in predicting material performance for spacecraft re-entry systems but also in assessing the threat posed by celestial bodies as they encounter Earth’s atmosphere. One of the leading facilities for such investigations is the Hypersonic Materials Environmental Test System (HyMETS) at NASA’s Langley Research Center. A pioneering test campaign conducted at HyMETS focused on unraveling the ablation mechanisms of an ordinary chondrite meteorite (Tamdakht H5) and a terrestrial analog (basalt). These studies unveiled distinct material behaviors: Tamdakht demonstrated a remarkably stable melt flow, with mass loss primarily driven by the volatilization of elements such as iron and sodium, whereas basalt exhibited more aggressive surface degradation due to the rapid decomposition of hydrated minerals, culminating in significant spallation and surface material ejection. Beyond meteorite analysis, HyMETS has also been integral in the exploration of advanced Thermal Protection Systems (TPS) such as Phenolic Impregnated Carbon Ablator (PICA), a material with extensive flight heritage in missions like Stardust, Mars Science Laboratory, Mars 2020, and Osiris-REx. PICA, when coated with NuSil CV-1144-0—a polysiloxane resin designed to prevent particle shedding—undergoes a remarkable transformation upon heating. The resin pyrolyzes to form a thin, oxidation-resistant silicon oxycarbide layer that profoundly influences the material’s thermal response through a sophisticated four-stage process. Initially, the silicon oxycarbide acts as a formidable barrier, impeding reactive interactions with the PICA char and effectively suppressing surface temperature rise and material recession. However, as the heating persists, the protective layer decomposes via carbothermal reduction, exposing the underlying char, which in turn leads to a dramatic spike in surface temperature and accelerated material erosion. In the final stage, equilibrium is reached, with recession rates aligning with those of the virgin material. This intricate understanding of PICA-NuSil behavior under extreme conditions offers valuable insights, enhancing material response models and advancing the development of next-generation TPS for space exploration.

Chemistry↗
DOE OSTI2023

Young’s modulus of V 3 O 5 thin films

Vanadium oxide V 3 O 5 exhibits an insulator-to-metal transition (IMT) near 430 K, which is the highest value for all vanadium oxides exhibiting IMTs. This makes it interesting for advanced electronic applications. However, the properties of V 3 O 5 have been little studied, and, in particular, there are no reports of experimentally determined mechanical properties. In this work, Young’s modulus of sputter-deposited V 3 O 5 thin films has been determined by measuring the fundamental resonant frequency of V 3 O 5 -coated silicon microcantilevers using a laser beam deflection technique. After deposition, the films were characterized by x-ray diffraction, resistivity measurements, and atomic force microscopy. The value of Young’s modulus experimentally determined for V 3 O 5 was 198 ± 14 GPa, which is slightly lower than the computationally derived values for bulk crystal V 3 O 5 .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Elucidation of a Metastable p(2 × 1) O Atom Adlayer Structure on Cu(111)

Cu-based catalysts are ubiquitous in many industrial reactions, including methanol synthesis. Under partially oxidizing conditions, Cu catalysts can have dynamic surface structures that greatly influence their reactivities. Therefore, elucidating the surface structures that are present on Cu, and looking for metastable structures, aids in the long term goal of understanding and controlling their catalytic behavior. Thin-film copper oxides such as the “29” and “44” structures have been described at length in the literature, but precursors to these thin-film oxides can be challenging to study because they exist only under certain conditions. Using a combination of experimental and computational surface science techniques, we discovered, modeled, and quantified a previously unreported O atom adlayer structure on Cu(111) with a p(2 × 1) unit cell. Here, we used scanning tunneling microscopy to visualize the striped 2 × 1 structure and density functional theory (DFT) structure optimizations to identify the thermodynamically most favorable positions of Cu and O atoms in a p(2 × 1) unit cell. Using X-ray photoelectron spectroscopy and temperature-programmed desorption, we determined the stoichiometry of the structure to be 2:1 for surface Cu atoms to O adatoms, the same stoichiometry as that modeled by DFT. This work reports a new metastable structure formed on Cu(111) at the very initial stages of oxidation and is therefore worth considering in models of catalytically relevant redox processes at Cu surfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Quantification of Oxygen Vacancies in SrFe0.5Cr0.5O3−δ Thin Films: Correlating Lattice Expansion with Oxidation State Variability

Oxygen vacancies (VO), even in the dilute regime, can significantly impact the physical and chemical properties of complex oxides. It is however challenging to reliably detect and adequately quantify such defects in thin film samples where the VO concentration and distribution may further vary in response to interfacial strain. Here, we present a method to quantify VO concentrations in SrFe0.5Cr0.5O3−δ (SFCO) epitaxial thin films. Through coherent Bragg rod analysis, X-ray absorption spectroscopy, and theoretical modeling, we systematically correlate the c-axis lattice expansion detected in SFCO films with a VO concentration gradient. Our results reveal a nearly linear relationship between oxygen off-stoichiometry and out-of-plane lattice expansion in coherently strained SFCO films, with δ increasing from 0.32 to 0.52 and the lattice expanding by ∼1.0%. Moreover, a significant decrease in Cr oxidation state (from Cr5+ to Cr3+) is observed as the VO concentration increases, while the Fe oxidation state remains fixed at Fe3+. Our findings provide a reliable way to quantify oxygen stoichiometry in complex oxides, offering a pathway to design materials with precisely tailored structure–property relationships.

Hossain, Mohammad Delower↗
DOE OSTI2020

Structural and Optical Properties of Phase-Pure UO 2 , α-U 3 O 8 , and α-UO 3 Epitaxial Thin Films Grown by Pulsed Laser Deposition

Fundamental understanding of the electronic, chemical, and structural properties of uranium oxides requires the synthesis of high-crystalline-quality epitaxial films of different polymorphs of one material or different phases with various oxygen valence states. Here we report the growth of single-phase epitaxial UO 2 , α-U 3 O 8 , and α-UO 3 thin films using pulsed laser deposition. Both oxygen partial pressure and substrate temperature play critical roles in determining the crystal structure of the uranium oxide films. X-ray diffraction and Raman spectroscopy demonstrate that the films are single phase with excellent crystallinity and epitaxially grown on a variety of substrates. Chemical valance states and optical properties of epitaxial uranium oxide films are studied by X-ray photoelectron spectroscopy and UV–vis spectroscopy, which further confirm the high-quality stoichiometric phase-pure uranium oxide thin films. Epitaxial UO2 films show a direct band gap of 2.61 eV, while epitaxial α-UO 2 , α-U 3 O 8 and α-UO 3 films exhibit indirect band gaps of 1.89 and 2.26 eV, respectively. The ability to grow high-quality epitaxy actinide oxide thin films and to access their different phases and polymorphous will have significant benefits to the future applications in nuclear science and technology.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Metal–insulator transition in composition-tuned nickel oxide films

Abstract Thin films of the solid solution Nd 1 − x La x NiO 3 are grown in order to study the expected 0 K phase transitions at a specific composition. We experimentally map out the structural, electronic and magnetic properties as a function of x and a discontinuous, possibly first order, insulator–metal transition is observed at low temperature when x = 0.2. Raman spectroscopy and scanning transmission electron microscopy show that this is not associated with a correspondingly discontinuous global structural change. On the other hand, results from density functional theory (DFT) and combined DFT and dynamical mean field theory calculations produce a 0 K first order transition at around this composition. We further estimate the temperature-dependence of the transition from thermodynamic considerations and find that a discontinuous insulator–metal transition can be reproduced theoretically and implies a narrow insulator–metal phase coexistence with x . Finally, muon spin rotation ( µ SR) measurements suggest that there are non-static magnetic moments in the system that may be understood in the context of the first order nature of the 0 K transition and its associated phase coexistence regime.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Effect of grain refinement on high temperature steam oxidation of an FeCrAl alloy

FeCrAl alloys are promising candidates to replace Zr alloys as fuel cladding materials in nuclear light-water reactors. Grain refinement has been indicated to improve irradiation resistance. To enhance corrosion resistance as well, the effects of grain refinement on steam corrosion behavior were investigated in this work. Samples of Kanthal D alloy (Fe-21Cr-5Al) with two different grain sizes (coarse-grained and ultrafine-grained) were exposed to steam at 1200 °C for 2 hrs. In conclusion, results indicate improved steam corrosion resistance in ultrafine-grained Kanthal D with formation of a thinner protective Al oxide layer and the presence of a thin underlying Cr oxide layer.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Structural and Electrocatalytic Studies of Pulsed Laser Deposited Epitaxial RuO 2 Thin Films

Two sets of high-quality epitaxial ruthenium oxide (RuO 2 ) thin films with different thicknesses were synthesized in situ on cost-competitive sapphire substrates by using a pulsed laser deposition technique. The first set of films, with a thickness of 40 nm and a sheet resistance of 15.7 Ω/□, was prepared using 2100 laser pulses, while the second set of films, with a thickness of 87 nm and a sheet resistance of 6.7 Ω/□, was prepared using 4800 laser pulses. All other deposition parameters were kept the same. The post-deposition structural and morphological measurements showed that both sets of films grew at the same growth rate, had the same crystallinity, similar grain boundary density, and slightly different surface roughness. The thicker RuO 2 films achieved an overpotential of 280 mV for the oxygen evolution reaction at a current density of 100 μA/cm 2 , comparable to or exceeding the performance of films grown on more expensive substrates. Comparatively, the thinner RuO 2 films, which have a significantly higher charge transfer resistance (250 Ω versus 100 Ω for thick films), display a higher overpotential of 320 mV. These results indicate that the lower electrical resistance of thicker films promotes charge transfer through the film body, leading to superior electrocatalytic properties.

charge-transfer↗
DOE OSTI2025

High-frequency electrical behavior in V 3 O 5 thin films

Vanadium oxides are known for their metal–insulator transition (MIT), with V 3 O 5 being notable for its transition temperature exceeding room temperature. At about 430 K, this material shows a change in crystal symmetry accompanied with one order of magnitude increase in its electrical conductivity and alterations in its optical properties. Although the property changes during the MIT in V 3 O 5 are less pronounced than those observed in VO 2 , its transition temperature is 90 K higher, making it appealing for applications requiring elevated temperatures. In this article, the high-frequency characteristics were determined in a V 3 O 5 two-terminal device in the range from 5 to 35 GHz. The S-parameters showed that the return loss at room temperature was close to −1.5 dB, and the isolation between ports was approximately −50 dB. At temperatures above the metal–insulator transition, the isolation decreased to around −40 dB at 35 GHz. For S11 and S22, similar behavior was observed at room temperature, with a notable change in the S-parameter phase of the device. This behavior suggests that V 3 O 5 may function well as a capacitor because the considerable change in phase could control the flow of electrical signals in devices. This property also may be used for matching purposes, especially considering its response to temperature changes. Additionally, conductivity calculation from S-parameters shows a decrease of approximately two orders of magnitude at 500 K and one order of magnitude at 300 K compared to DC values. These findings highlight V 3 O 5 potential for integration into radio frequency devices that demand consistent performance in high-temperature environments.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Research into the feasibility of metal- and oxide-film capacitors

Thin film capacitors with up to twenty-two active layers have been deposited by RF sputtering. The materials were aluminum electrodes of 1200 to 1500 angstrom thickness and silica dielectric layers of 3000 to 6000 angstrom thickness. The best electrical characteristics were capacitances of nearly 0.1 microfarad for an active area of 1.25 square centimeters, dissipation factor of less than 0.01 over a frequency range of 0.5 to 100 kilohertz and energy density of approximately 70 millijoules per cubic centimeter of active deposited material at a working voltage of 40 volts. These aluminum-silica capacitors exhibit excellent electrical stability over a temperature range from -55 C to +300 C.

Jorgenson, G. V.↗
DOE OSTI2026

Gold-Induced Chemical Perturbations in CdTe-Based Photovoltaic Cells

Back-contacting p-type CdTe has been identified as one of the major areas of loss in CdTe photovoltaic (PV) power conversion efficiency (PCE). In research settings, Au is a common contact material due to its ease of use and decent performance. This work provides a detailed investigation into using gold for back contacting As-doped, CdCl 2 -treated, polycrystalline CdTe that has been exposed to air after absorber processing, another routine practice. First, X-ray photoemission spectroscopy (XPS) is used to determine the native oxide to be 1.6 nm of CdTeO 3 by using a combination of angle-resolved XPS and the cadmium-modified Auger parameter. During gold metallization of CdTe, oxygen and oxidized tellurium are eliminated from the thin CdTeO 3 native oxide. The fates of the released oxygen and possibly cadmium and tellurium are not known, but these reaction byproducts can enter the absorber bulk or grain boundaries, stay at the interface, or dissolve in the Au. Interfacial hole barriers between CdTe and Au are measured for samples with and without the native oxide present prior to metallization. Results show that the thin CdTeO 3 alleviates the downward band bending by 40 meV from 470 to 430 meV even though it is consumed during interface formation. The implications of these chemical reactions on the device are assessed through photoluminescence (PL) spectroscopy, which shows losses in internal open circuit voltage (iVoc) from 820 to 795 meV, carrier lifetime from 123 to 45 ns, and PL quantum yield from 2.9 × 10 −5 to 1.2 × 10 −5 . Modeling timeresolved PL lifetimes demonstrates the back surface recombination velocity due to metallization reduces minority carrier lifetimes. These results identify the native oxide and show that it plays an important role in mediating downward band bending along with how the back interface reaction can negatively impact device-scale parameters and reduce PV PCE.

14 SOLAR ENERGY↗
DOE OSTI2020

CO Oxidation Mechanisms on CoO x -Pt Thin Films

The reaction of CO and O 2 with submonolayer and multilayer CoO x films on Pt(111), to produce CO 2 , was investigated at room temperature in the mTorr pressure regime. Here, using operando ambient pressure X-ray photoelectron spectroscopy and high pressure scanning tunneling microscopy, as well as density functional theory calculations, we found that the presence of oxygen vacancies in partially oxidized CoO x films significantly enhances the CO oxidation activity to form CO 2 upon exposure to mTorr pressures of CO at room temperature. In contrast, CoO films without O-vacancies are much less active for CO 2 formation at RT, and CO only adsorbed in the form of carbonate species that are stable up to 260 °C. On submonolayer CoO x islands, the carbonates form preferentially at island edges, deactivating the edge sites for CO 2 formation, even while the reaction proceeds inside the islands. These results provide a detailed understanding of CO oxidation pathways on systems where noble metals such as Pt interact with reducible oxides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1990

Laboratory investigations: Low Earth orbit environment chemistry with spacecraft surfaces

Long-term space operations that require exposure of material to the low earth orbit (LEO) environment must take into account the effects of this highly oxidative atmosphere on material properties and the possible contamination of the spacecraft surroundings. Ground-based laboratory experiments at Los Alamos using a newly developed hyperthermal atomic oxygen (AO) source have shown that not only are hydrocarbon based materials effected but that inorganic materials such as MoS2 are also oxidized and that thin protective coatings such as Al2O3 can be breached, producing oxidation of the underlying substrate material. Gas-phase reaction products, such as SO2 from oxidation of MoS2 and CO and CO2 from hydrocarbon materials, have been detected and have consequences in terms of spacecraft contamination. Energy loss through gas-surface collisions causing spacecraft drag has been measured for a few select surfaces and has been found to be highly dependent on the surface reactivity.

Cross, Jon B.↗
NASA NTRS1990

12-crown-4 ether-assisted enhancement of ionic conductivity and interfacial kinetics in polyethylene oxide electrolytes

The electrical and electrochemical properties of thin films of polyethylene oxide electrolytes with and without 12-crown-4 ether (12Cr4) are studied as a function of temperature and in the frequency regime from 100 kHz to 0.1 Hz. These measurements were made on electrolytes containing LiCF3SO3, LiBF4, or LiClO4 salts. At a given temperature, the bulk conductivity for a particular salt depends on the 12Cr4 concentration, reaching a maximum for a ratio of 12Cr4 to Li of 0.003.

Nagasubramanian, G.↗
DOE OSTI2023

Effect of substrate and growth method on vanadium dioxide thin films by RF magnetron sputtering: Vanadium metal oxidation vs reactive sputtering

Vanadium dioxide (VO 2 ) undergoes a metal–insulator phase transition at ~70 °C and has attracted substantial interest for potential applications in electronics, including those in neuromorphic computing. The vanadium–oxygen system has a rather complicated phase diagram, and controlling the stoichiometry and the phase of thin films of vanadium oxides is a well-known challenge. Here, we explore the novel combination of two methods of VO 2 thin film deposition using off-axis RF magnetron sputtering on (100)- and (111)-oriented yttria-stabilized zirconia (YSZ) substrates: reactive sputtering of vanadium in an oxygen environment and sputtering of vanadium metal followed by oxidation to VO 2 . Interestingly, the reactive sputtering process on both substrate orientations yields the metastable semiconducting VO 2 (B) phase, which is structurally stabilized by the YSZ surface. The metal sputtering and oxidation process on YSZ produces mainly the equilibrium monoclinic (or M1) phase of VO 2 that exhibits a metal–insulator transition. Using this method, we obtained thin films of (010)-textured polycrystalline VO 2 (M1) that show a metal–insulator transition with an on/off ratio larger than 1000.

36 MATERIALS SCIENCE↗